JPS60173820A - Manufacture of vertical anisotropic magnetized film - Google Patents
Manufacture of vertical anisotropic magnetized filmInfo
- Publication number
- JPS60173820A JPS60173820A JP2735884A JP2735884A JPS60173820A JP S60173820 A JPS60173820 A JP S60173820A JP 2735884 A JP2735884 A JP 2735884A JP 2735884 A JP2735884 A JP 2735884A JP S60173820 A JPS60173820 A JP S60173820A
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- film
- added
- magnetic field
- heated
- iron oxide
- Prior art date
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- Thin Magnetic Films (AREA)
- Compounds Of Iron (AREA)
- Magnetic Record Carriers (AREA)
- Manufacturing Of Magnetic Record Carriers (AREA)
Abstract
Description
【発明の詳細な説明】
く技術分野〉
不発ゆ」は高記録密度磁気記録装置、特に磁気ディスク
の磁性媒体として用いられる、膜面に垂直に磁気異方性
を付与した酸化鉄薄膜の製造方法に関するものである。[Detailed Description of the Invention] [Technical Field] Fuhayu is a method for producing iron oxide thin films with magnetic anisotropy perpendicular to the film surface, which are used as magnetic media for high-density magnetic recording devices, especially magnetic disks. It is related to.
〈技術的持′景と問題点〉
膜面に垂直に磁気異方性を付与した磁性媒体を用い、膜
面に垂直に磁化することで情報を記録するいわゆる垂直
磁化記録方式は、記録密度が置くなる程記録磁化方向に
ビット形状が伸びた形になるため反磁界が減少し、記録
磁化は安定化する。このため、従来用いられてきた膜面
に沿って平行に磁気異方性を付与した面内磁化膜に比べ
、高い記録密度が達成できることが判明している。この
資料としては、(S 、Iwasa’rLetal :
IEEE Trans Magn、 、MAG−13
(1977)1272)がある。<Technical outlook and problems> The so-called perpendicular magnetization recording method, which records information by magnetizing perpendicular to the film surface using a magnetic medium with magnetic anisotropy perpendicular to the film surface, has a high recording density. The further the bit is placed, the more the bit shape extends in the recording magnetization direction, so the demagnetizing field decreases and the recording magnetization becomes more stable. Therefore, it has been found that a higher recording density can be achieved compared to the conventionally used in-plane magnetized film in which magnetic anisotropy is imparted parallel to the film surface. This material includes (S, Iwasa'rLetal:
IEEE Trans Magn, MAG-13
(1977) 1272).
かかる垂直磁化記録方式に用いられる磁性媒体としては
、従来コバルト・クロム合金やコバル)−ルテニウム合
金等コバル)(Co)基合金金属膜が使われている。こ
の資料としては、(S、IwasLk−1etal ;
IEEE Trans Magn、 、MAG−14、
(1978)849 、 S、Hirono etal
:Jpn、J、Apol。As a magnetic medium used in such a perpendicular magnetization recording system, a cobalt (Co) based alloy metal film such as a cobalt-chromium alloy or a cobalt-ruthenium alloy has been used. This material includes (S, IwasLk-1etal;
IEEE Trans Magn, , MAG-14,
(1978) 849, S. Hirono et al.
: Jpn, J., Apol.
PH3’s、20(1981)L571 )がある。PH3's, 20 (1981) L571).
とのCo基合金薄膜は、面に垂直にC軸がそろった組織
となっている。また、Coの結晶磁気異方性は一軸性で
あり、磁化容易軸はC軸なので、結局Co基合金薄膜は
膜面に垂直に磁気異方性が付与される、いわゆる垂直異
方性磁化膜である。The Co-based alloy thin film has a structure in which the C-axis is aligned perpendicular to the surface. In addition, since the magnetocrystalline anisotropy of Co is uniaxial and the easy axis of magnetization is the C axis, the Co-based alloy thin film ends up having magnetic anisotropy perpendicular to the film surface, a so-called perpendicularly anisotropic magnetized film. It is.
因に、膜面に垂直に測定した場合の残留磁化の方が膜面
に平行に測定した場合の残留磁化よシ大きい場合の垂直
異方性磁化膜は特に垂直磁化膜とよばれる。Incidentally, a perpendicularly anisotropic magnetized film in which the residual magnetization when measured perpendicular to the film surface is larger than the residual magnetization when measured parallel to the film surface is particularly called a perpendicularly magnetized film.
このような垂直異方性磁化膜であるCo基合金薄膜の欠
点としては、この膜が金属膜であるために腐食しやすい
ものであり、しかも表面硬度が足シないことである。The drawbacks of such a Co-based alloy thin film, which is a perpendicularly anisotropic magnetization film, are that since this film is a metal film, it is easily corroded, and furthermore, the surface hardness is insufficient.
〈発明の目的〉
本発明は、上述のCo基合金薄膜の欠点を除き、耐食性
が高く又表面硬度の優れた酸化鉄薄膜につき、誘導磁気
異方性を膜面に垂直に付与した垂直異方性磁化膜の製造
方法の提供を目的とする。<Objective of the Invention> The present invention eliminates the drawbacks of the above-mentioned Co-based alloy thin film, and provides a perpendicular anisotropy in which an induced magnetic anisotropy is imparted perpendicularly to the film surface for an iron oxide thin film that has high corrosion resistance and excellent surface hardness. The purpose of the present invention is to provide a method for manufacturing a magnetic film.
〈発明の構成〉
かかる目的を達成する本発明は、オスミウム(08)を
絵加した酸化鉄を主成分とする薄膜の膜面に垂直に磁場
を加えガがら熱処理を施すことを特徴とする。<Structure of the Invention> The present invention that achieves the above object is characterized in that a magnetic field is applied perpendicularly to the film surface of a thin film whose main component is iron oxide with osmium (08) added, and heat treatment is carried out.
〈実施例〉
実施例1
直径20 ctrrの鉄(Fe)ターグツト上にオスミ
ウム(O8うおよびCoペレットを配置し、アルゴン(
Ar)と酸素(0□)が1=1の混合ガス雰囲気中で応
応スパッタリングを行ないへマタイト(α−Fe20a
)薄膜を基根上に形成する。ス・pツタリング方式は
高周波二極スパッタ方式でおυスパッタリング電力は3
00W、スパッタ雰囲気圧力は2 X 10” Tor
rである。基板はガラス基板を用いている。膜中へのO
s及びCO添加凰はターグツト上のベレットの量を増減
することで制御可能である。膜厚0.1μmのα−Fe
20B膜中にO8およびCOが金属元素のみの比率で各
々2.3及び3.6 at%添加した。ついで、このα
−Fe203薄膜について以下の3種類の熱処理を施す
。<Example> Example 1 Osmium (O8) and Co pellets were placed on an iron (Fe) target with a diameter of 20 ctrr, and argon (
Hematite (α-Fe20a) was sputtered by reactive sputtering in a mixed gas atmosphere of 1=1 of Ar) and oxygen (0□).
) A thin film is formed on the basal root. The sputtering method is a high frequency two-pole sputtering method and the sputtering power is 3
00W, sputtering atmosphere pressure is 2 x 10” Tor
It is r. A glass substrate is used as the substrate. O into the membrane
The addition of carbon dioxide and CO can be controlled by increasing or decreasing the amount of pellets on the target. α-Fe with a film thickness of 0.1 μm
O8 and CO were added to the 20B film at a ratio of only metal elements of 2.3 and 3.6 at%, respectively. Next, this α
-The following three types of heat treatment are performed on the Fe203 thin film.
(1)加湿した水素(H2)気流中で250°Gに1時
間加熱し、マグネタイ) Fe、04膜を得る。。(1) Heating at 250°G for 1 hour in a humidified hydrogen (H2) stream to obtain a magnetite (Fe, 04) film. .
この際、膜面に垂直に外部磁場10 KOeを加える。At this time, an external magnetic field of 10 KOe is applied perpendicular to the film surface.
(2) 加湿したH2気流中で250℃に1時間加熱し
てFe3O4膜を得た後、大気中で310 ”Cに4時
間加熱してマグヘマイト(γ−Fe2Q3) M>な得
る。大気中で加熱する際に、膜面に垂直に外部磁場10
KOeを加える。(2) After heating to 250°C for 1 hour in a humidified H2 stream to obtain a Fe3O4 film, heating to 310"C for 4 hours in the air to obtain maghemite (γ-Fe2Q3). In the air When heating, apply an external magnetic field 10 perpendicular to the film surface.
Add KOe.
(3)加湿したH2気流中で250℃に1時間加熱して
Fe、0.膜を得た後、大気中で310℃に4時間加熱
してγ−Fe2O3膜を形成した。このγ−Fe、OB
膜面に垂直に10 KOeの外部磁場を加えながら、大
気中で3−80℃に1時間加熱する。この処理ではr
−Fe20gの状態が保たれる。(3) Heating at 250°C for 1 hour in a humidified H2 stream to remove Fe, 0. After obtaining the film, it was heated at 310° C. for 4 hours in the air to form a γ-Fe2O3 film. This γ-Fe, OB
The film is heated to 3-80° C. for 1 hour in air while applying an external magnetic field of 10 KOe perpendicular to the film surface. In this process, r
-The state of 20g of Fe is maintained.
以上に述べた3種類の熱処理を施した後、膜面に平行方
向と垂直方向にヒステリシスループを測定した。各熱処
理後の保磁力(He)および残留磁化(Mr)の値を表
−1に示す。After performing the three types of heat treatments described above, hysteresis loops were measured in the direction parallel to and perpendicular to the film surface. Table 1 shows the values of coercive force (He) and residual magnetization (Mr) after each heat treatment.
[−12,3at%Os + 3.6 at%CO陥加
酸化鉄薄膜の磁気特性
この表−1から判明するように全ての試料において膜面
に垂直方向の保磁力(He上)の方が膜面に平行な保磁
力(He//)よシも大きくなっておシ、垂直異方性磁
化膜となっていることを示している。特に、熱処理(3
)を施した場合には、膜面の垂直方向の残留磁化(Mr
上)も膜面に平行方向の残留磁化(Mr//)よシ大き
くなっておシ、膜面に平行方向よりも垂直方向に磁化さ
れた方が安定な、いわゆる垂直磁化膜であることを示し
ている。[-12,3 at%Os + 3.6 at%CO Magnetic properties of fallen iron oxide thin film As can be seen from Table 1, the coercive force in the direction perpendicular to the film surface (on He) is higher in all samples. The coercive force (He//) parallel to the film surface is also larger, indicating that the film is a perpendicularly anisotropic magnetized film. In particular, heat treatment (3
), residual magnetization in the direction perpendicular to the film surface (Mr
The residual magnetization (Mr//) in the direction parallel to the film surface is also larger than that in the upper case, indicating that it is a so-called perpendicularly magnetized film, which is more stable when magnetized perpendicularly to the film surface than parallel to the film surface. It shows.
実施例2
実施例1と同様の作製条件でO8のみを金属元素のみの
比率で5.Oat%添加したα−Fe、0.膜を作製し
た。膜厚は帆1μmである。このα−Fe、0゜膜を加
湿した水素気流中で250℃に1時間加熱し、Fe3O
4とした後、大気中で310℃に4時間加熱してγ−F
e、O,とする。このOB添添加−Fe20.膜につい
て再度、大気中で250℃から680℃の範囲で15分
間加熱する。なお、この際膜面に垂直に10 KOeの
外部磁場を印加する。Example 2 Under the same manufacturing conditions as Example 1, only O8 was used at a ratio of only metal elements of 5. Oat% added α-Fe, 0. A membrane was prepared. The film thickness is 1 μm. This α-Fe, 0° film was heated to 250°C for 1 hour in a humidified hydrogen stream, and Fe3O
4, then heated to 310°C in the air for 4 hours to obtain γ-F.
Let e, O, be. This OB addition-Fe20. The film is heated again in the air at a temperature in the range of 250°C to 680°C for 15 minutes. Note that at this time, an external magnetic field of 10 KOe is applied perpendicular to the film surface.
第1図には保磁力(He)及び残留磁化(Mr)の磁場
中熱処理温度依存性を示す。磁場中熱処理温度が350
℃以上の場合には膜面に垂直に測定したHc+Mrの方
が膜面に平行に測定したHcやMrよシも大きく、垂直
磁化膜が形成されている。FIG. 1 shows the dependence of coercive force (He) and residual magnetization (Mr) on the heat treatment temperature in a magnetic field. Heat treatment temperature in magnetic field is 350℃
When the temperature is above .degree. C., Hc+Mr measured perpendicular to the film surface is larger than Hc and Mr measured parallel to the film surface, and a perpendicularly magnetized film is formed.
実施例3
実施例2と同一条件でO8をO〜9.5 at%含む0
.2μm厚さのα−Fe、03薄膜を形成した。この薄
膜を加湿水素気流中で250〜320℃に1時間加熱し
た後、大気中で310℃に4時間加熱しr −Fe1O
Bを主成分と子る薄膜を得た。X線回折によるとOaを
9.5 at%添加した膜にはγ−Fe、0.相以外に
微量のα−Fe203相が混在していることが確認され
ている。このOB添添加−Fe20゜薄膜を膜面に垂直
に10 KOeの外部磁場を加えながら大気中で400
℃に15分間加熱した。Example 3 Contains O8 at 0 to 9.5 at% under the same conditions as Example 2.
.. An α-Fe, 03 thin film with a thickness of 2 μm was formed. This thin film was heated to 250 to 320°C for 1 hour in a humidified hydrogen stream, and then heated to 310°C for 4 hours in the air.
A thin film containing B as the main component was obtained. According to X-ray diffraction, the film containing 9.5 at% Oa contained γ-Fe and 0.5 at%. It has been confirmed that a trace amount of α-Fe203 phase is present in addition to the phase. This OB-added-Fe20° thin film was heated for 400° in the atmosphere while applying an external magnetic field of 10 KOe perpendicular to the film surface.
℃ for 15 minutes.
この磁場中熱処理後のr −Fe20s膜の保磁力(H
c)と残留磁化(Mr)のO8添加量依存性を第2図に
示す。He上と唐土は膜面に垂直に測定した保磁力と残
留磁化を、Hc//とMr //は膜面に平行に測′定
した保磁力と残留磁化を各々示す。08添加鈑が帆37
〜9.5 at%の範囲でHe上>He//が成立し、
垂直磁気異方性膜が得られている。特にO8添加量が3
.5〜9.5 at%の範囲では、Mr±>Mr//が
成立し、垂直磁化膜が得られている。なお、磁場中熱処
理時の外部磁場が4 KOeO時も、同様の効果が得ら
れた。The coercive force (H
c) and the dependence of residual magnetization (Mr) on the amount of O8 added is shown in FIG. He top and Karado indicate the coercive force and residual magnetization measured perpendicular to the film surface, and Hc // and Mr // indicate the coercive force and residual magnetization measured parallel to the film surface, respectively. 08 Addition plate sail 37
In the range of ~9.5 at%, He>He// holds true,
A perpendicular magnetic anisotropic film has been obtained. Especially when the amount of O8 added is 3
.. In the range of 5 to 9.5 at%, Mr±>Mr// holds true, and a perpendicularly magnetized film is obtained. Note that similar effects were obtained when the external magnetic field during magnetic field heat treatment was 4 KOeO.
実施例4
表面を熱酸化した直径50圏のシリコン(Si)円板を
基板として用い、他の伯仲は実施例2と同様にしてOs
を6%添加した0、2μm厚のγ−Fe203薄膜を形
成した。このγ−Fe、 O,薄膜面に垂直に外部磁場
7 KOeを加えながら大気中で400℃に30分間加
熱し、垂直磁化膜とした。Example 4 A silicon (Si) disk with a diameter of 50 mm and whose surface was thermally oxidized was used as the substrate, and the other parts were made in the same manner as in Example 2.
A γ-Fe203 thin film with a thickness of 0.2 μm was formed by adding 6% of γ-Fe203. This γ-Fe, O, thin film was heated at 400° C. for 30 minutes in the air while applying an external magnetic field of 7 KOe perpendicularly to the surface to form a perpendicularly magnetized film.
この垂直磁化膜の磁気特性は以下の通υである。The magnetic properties of this perpendicularly magnetized film are as follows.
He上= 14000e 、 He //= 5000
e 、 Mr上=100Gauss 、 Mr / =
30 Gauss。He top = 14000e, He //= 5000
e, Mr upper = 100 Gauss, Mr / =
30 Gauss.
この08添加γ−Fe20B垂直磁化膜面に直径2.2
9閣のMn −Zn 7工ライト球を押しっけ、相対速
度が1 m/secとなるようにディスクを回転させ、
1000回通過後の媒体面の傷の深さを測定した。又、
スパッタリング法で表面を熱酸化したSi基板上に81
.3at%Co −18,7at%Cr垂直磁化膜を作
製し、同様の摩耗試験を行なった。C。This 08-added γ-Fe20B perpendicular magnetization film has a diameter of 2.2
9 Mn-Zn 7 Push the light ball and rotate the disk so that the relative velocity is 1 m/sec.
The depth of scratches on the medium surface after passing 1000 times was measured. or,
81 on a Si substrate whose surface was thermally oxidized by sputtering.
.. A 3 at% Co -18,7 at% Cr perpendicularly magnetized film was prepared and subjected to a similar wear test. C.
−Cr膜の作製条件は以下の通りである。ターグツトは
直径100調の81.3at%Co −18,7at%
Cr円板、スパッタ雰囲気は2 X 10−2Torr
のArガスであシ、高周波電力200Wを加えて0.2
μm厚のCo−Cr膜を得た。このCo −Cr膜の磁
気特性はHc上= 17000e 、 Hc //=
9000e 、 Mr上= 90 Gauss 、 M
r //= 48 Gaussである。第3図には、フ
ェライト球の荷重と摩耗傷の深さの関係を示す。OIs
添加γ−Fe、03膜Aの摩耗深さはC0−Cr膜Bの
約見と少ないことがわかる。The conditions for producing the -Cr film are as follows. Tergut is 81.3 at%Co -18,7 at% with a diameter of 100.
Cr disk, sputtering atmosphere is 2 x 10-2 Torr
0.2 by adding 200W of high-frequency power and Ar gas of
A Co-Cr film with a thickness of μm was obtained. The magnetic properties of this Co-Cr film are as follows: Hc = 17000e, Hc //=
9000e, Mr upper = 90 Gauss, M
r // = 48 Gauss. FIG. 3 shows the relationship between the load on the ferrite ball and the depth of the wear scar. OIs
It can be seen that the wear depth of the added γ-Fe, 03 film A is smaller than that of the C0-Cr film B.
次に、上記のr −Fe、0.膜とCo −Cr Hに
ついてウィンチェスタ−形のMn −Znフェライトヘ
ッドを用い、記録再生特性を評価した。ヘッドのコア幅
は70μm1 コイル巻数は20回、ギャツブ長さは0
.3μmであシ、周速5m/sec で測足した。この
時のヘッド浮上量は0.05μmである。孤立波再生出
力の捧の出力が得られる記録密&(D50)はr −F
e20g膜が3200 FRPM (FluxReYe
rsals per Mlllimeter )、Co
−Cr膜が3170F’RPIvlであつゾヒ。即ぢ、
本発明による7゛−Fe2O3垂直磁化膜は、従来用い
られてきたCo −Cr垂直磁化ねとほぼ同等の記録密
度が得られることが確認された。Next, the above r-Fe, 0. The recording and reproducing characteristics of the film and Co-CrH were evaluated using a Winchester-type Mn-Zn ferrite head. The core width of the head is 70 μm1, the number of coil turns is 20, and the length of the coil is 0.
.. Measurements were made at a thickness of 3 μm and a circumferential speed of 5 m/sec. The head flying height at this time is 0.05 μm. The recording density &(D50) that provides the highest output of solitary wave reproduction output is r −F
e20g membrane is 3200 FRPM (FluxReYe
rsals per Millimeter), Co
-The Cr film is 3170F'RPIvl. Immediately,
It has been confirmed that the 7'-Fe2O3 perpendicularly magnetized film according to the present invention can provide almost the same recording density as the conventionally used Co--Cr perpendicularly magnetized film.
最後に、上記のOs添加r −Fe、、03薄膜とCo
−Cr薄膜を、湿度90係、温度80℃の雰囲気中に1
00日間放置し、1I11候性を調べた。08添加γ−
Fe20s助膜では腐食等の兆候は目視によっでも光学
顕微鏡観察によっても認められなかったが、Co −C
r膜では1 atl当92〜3箇所の腐食が認められ1
゛こ。Finally, the above Os-doped r-Fe,,03 thin film and Co
-Cr thin film was placed in an atmosphere with a humidity of 90 parts and a temperature of 80°C.
The sample was left to stand for 00 days, and its 1I11 symptoms were examined. 08 addition γ-
In the Fe20s auxiliary film, no signs of corrosion were observed either visually or by optical microscopy, but the Co-C
In the R film, corrosion was observed at 92 to 3 locations per atl.
゛ko.
〈発明の効果〉
以上説明したように、本発明によって作製されたO8添
加酸化鉄の垂直異方性磁化膜は、垂直磁気記録に適した
磁気特性を有すると同時に、従来用いられてきたCo
−Cr膜等の金属薄膜と比べ、耐摩耗特性やit食性に
優れる等、実用に供する場合の信頼性を著しく向上させ
る利点がある。<Effects of the Invention> As explained above, the O8-doped iron oxide perpendicularly anisotropic magnetization film produced according to the present invention has magnetic properties suitable for perpendicular magnetic recording, and at the same time has magnetic properties suitable for perpendicular magnetic recording.
-Compared with metal thin films such as Cr films, it has advantages such as excellent wear resistance and corrosion resistance, which significantly improves reliability in practical use.
【図面の簡単な説明】
81図は磁場中熱処理温度と保磁力(Hc)及び残留磁
化(Mr)の関係を示すグラフ、第2図はOB添加量と
磁場中熱処理後の保磁力(He)及び残留磁化(Mr’
)の関係を示すグラフ、第3図はフェライト球圧子荷重
と摩耗キズ深さの関係を示すグラフである。
図中、
Mr−1−il、膜面垂直方向残留磁化、Mr /は膜
面平行方向残留磁化、
Hclは膜面垂直方向保磁力、
Ha/は膜面平行方向保磁力である。
特許出願人 日本電信電話公社
代理人弁理士 光石 土部(他1名)
第を図
1ajIA中hsa’、*s−t’c)第2図
0(24G B 7゜
Os4力Djt(at%〕[Brief explanation of the drawings] Figure 81 is a graph showing the relationship between heat treatment temperature in a magnetic field, coercive force (Hc) and residual magnetization (Mr), and Figure 2 is a graph showing the relationship between the amount of OB added and the coercive force (He) after heat treatment in a magnetic field. and residual magnetization (Mr'
), and FIG. 3 is a graph showing the relationship between ferrite ball indenter load and wear scratch depth. In the figure, Mr-1-il is the residual magnetization in the direction perpendicular to the film surface, Mr/ is the residual magnetization in the direction parallel to the film surface, Hcl is the coercive force in the direction perpendicular to the film surface, and Ha/ is the coercive force in the direction parallel to the film surface. Patent applicant: Nippon Telegraph and Telephone Public Corporation Patent attorney Dobe Mitsuishi (and 1 other person) Fig. 1ajIA hsa', *s-t'c) Fig. 2 0 (24G B 7゜Os4 force Djt (at%)
Claims (3)
る薄膜の膜面に垂直に磁場を加えながら熱処理を施すこ
とを特徴とする垂直異方性磁化膜の製造方法。(1) A method for producing a perpendicularly anisotropic magnetized film, which is characterized by performing heat treatment while applying a magnetic field perpendicular to the film surface of a thin film whose main component is iron oxide doped with osmium-08.
水素気流中で加熱する上記熱処理を行なうことによシマ
グネタイトFe504 を形成することを特徴とする特
許請求の範囲第1:!liI記載の垂直異方性磁化膜の
製造方法。(2) The above iron oxide is hematite α-Fe20. year,
Claim 1, characterized in that simagnetite Fe504 is formed by performing the above-mentioned heat treatment of heating in a hydrogen stream. A method for manufacturing a perpendicularly anisotropic magnetized film described in liI.
中で加熱する上記熱処理を行なうことによシマグヘマイ
トγ−Fe、、Osを形成することを特徴とする特許請
求の範囲第1項記載の垂直異方性磁化膜の製造方法。 (4ン 上記酸化鉄をマグネタイトγ−Fe203とし
、大気中で加熱する上記熱処理を行なうことを特徴とす
る特rf請求の範囲第1項記載の垂直異方性磁化膜の製
造方法。(3) The above iron oxide is made of magnetite Fe50. 2. The method for producing a perpendicularly anisotropic magnetized film according to claim 1, wherein simaghemite γ-Fe, Os is formed by performing the heat treatment in which the perpendicularly anisotropic magnetized film is heated in the atmosphere. (4) The method for producing a perpendicularly anisotropic magnetized film according to claim 1, characterized in that the iron oxide is magnetite γ-Fe203, and the heat treatment is performed by heating in the atmosphere.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2735884A JPS60173820A (en) | 1984-02-17 | 1984-02-17 | Manufacture of vertical anisotropic magnetized film |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2735884A JPS60173820A (en) | 1984-02-17 | 1984-02-17 | Manufacture of vertical anisotropic magnetized film |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS60173820A true JPS60173820A (en) | 1985-09-07 |
JPH0254645B2 JPH0254645B2 (en) | 1990-11-22 |
Family
ID=12218823
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2735884A Granted JPS60173820A (en) | 1984-02-17 | 1984-02-17 | Manufacture of vertical anisotropic magnetized film |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS60173820A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7220482B2 (en) | 2001-01-24 | 2007-05-22 | Matsushita Electric Industrial Co., Ltd. | Aligned fine particles, method for producing the same and device using the same |
-
1984
- 1984-02-17 JP JP2735884A patent/JPS60173820A/en active Granted
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7220482B2 (en) | 2001-01-24 | 2007-05-22 | Matsushita Electric Industrial Co., Ltd. | Aligned fine particles, method for producing the same and device using the same |
Also Published As
Publication number | Publication date |
---|---|
JPH0254645B2 (en) | 1990-11-22 |
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