JPS60169176A - ΝｂΝ薄膜の形成方法 - Google Patents

ΝｂΝ薄膜の形成方法

Info

Publication number
JPS60169176A
JPS60169176A JP59024730A JP2473084A JPS60169176A JP S60169176 A JPS60169176 A JP S60169176A JP 59024730 A JP59024730 A JP 59024730A JP 2473084 A JP2473084 A JP 2473084A JP S60169176 A JPS60169176 A JP S60169176A
Authority
JP
Japan
Prior art keywords
thin film
mgo
nbn
substrate
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59024730A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0376596B2 (cg-RX-API-DMAC7.html
Inventor
Tsutomu Yamashita
努 山下
Hiroshi Oota
浩 太田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RIKEN
Original Assignee
RIKEN
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RIKEN filed Critical RIKEN
Priority to JP59024730A priority Critical patent/JPS60169176A/ja
Publication of JPS60169176A publication Critical patent/JPS60169176A/ja
Publication of JPH0376596B2 publication Critical patent/JPH0376596B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/01—Manufacture or treatment
    • H10N60/0241—Manufacture or treatment of devices comprising nitrides or carbonitrides

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physical Vapour Deposition (AREA)
  • Superconductor Devices And Manufacturing Methods Thereof (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP59024730A 1984-02-13 1984-02-13 ΝｂΝ薄膜の形成方法 Granted JPS60169176A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59024730A JPS60169176A (ja) 1984-02-13 1984-02-13 ΝｂΝ薄膜の形成方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59024730A JPS60169176A (ja) 1984-02-13 1984-02-13 ΝｂΝ薄膜の形成方法

Publications (2)

Publication Number Publication Date
JPS60169176A true JPS60169176A (ja) 1985-09-02
JPH0376596B2 JPH0376596B2 (cg-RX-API-DMAC7.html) 1991-12-05

Family

ID=12146264

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59024730A Granted JPS60169176A (ja) 1984-02-13 1984-02-13 ΝｂΝ薄膜の形成方法

Country Status (1)

Country Link
JP (1) JPS60169176A (cg-RX-API-DMAC7.html)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62154676A (ja) * 1985-12-27 1987-07-09 Toyo Soda Mfg Co Ltd スパツタ薄膜の配向強度の改良方法
JPS6487763A (en) * 1987-05-26 1989-03-31 Sumitomo Electric Industries Superconducting material
US5100694A (en) * 1989-08-01 1992-03-31 The United States Of America As Represented By The Administrator National Aeronautics And Space Administration Method for producing edge geometry superconducting tunnel junctions utilizing an NbN/MgO/NbN thin film structure
CN105449094A (zh) * 2015-12-29 2016-03-30 中国科学院上海微系统与信息技术研究所 氮化铌薄膜的制备方法、squid器件及其制备方法
CN107857240A (zh) * 2017-11-30 2018-03-30 株洲硬质合金集团有限公司 氮化铌粉末的生产方法

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62154676A (ja) * 1985-12-27 1987-07-09 Toyo Soda Mfg Co Ltd スパツタ薄膜の配向強度の改良方法
JPS6487763A (en) * 1987-05-26 1989-03-31 Sumitomo Electric Industries Superconducting material
US5100694A (en) * 1989-08-01 1992-03-31 The United States Of America As Represented By The Administrator National Aeronautics And Space Administration Method for producing edge geometry superconducting tunnel junctions utilizing an NbN/MgO/NbN thin film structure
CN105449094A (zh) * 2015-12-29 2016-03-30 中国科学院上海微系统与信息技术研究所 氮化铌薄膜的制备方法、squid器件及其制备方法
CN105449094B (zh) * 2015-12-29 2019-04-05 中国科学院上海微系统与信息技术研究所 氮化铌薄膜的制备方法、squid器件及其制备方法
CN107857240A (zh) * 2017-11-30 2018-03-30 株洲硬质合金集团有限公司 氮化铌粉末的生产方法
CN107857240B (zh) * 2017-11-30 2021-03-30 株洲硬质合金集团有限公司 氮化铌粉末的生产方法

Also Published As

Publication number Publication date
JPH0376596B2 (cg-RX-API-DMAC7.html) 1991-12-05

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