JPS60168043A - Ｆｅｔ型センサ - Google Patents
Ｆｅｔ型センサInfo
- Publication number
- JPS60168043A JPS60168043A JP59023598A JP2359884A JPS60168043A JP S60168043 A JPS60168043 A JP S60168043A JP 59023598 A JP59023598 A JP 59023598A JP 2359884 A JP2359884 A JP 2359884A JP S60168043 A JPS60168043 A JP S60168043A
- Authority
- JP
- Japan
- Prior art keywords
- film
- humidity
- fet
- sensitive body
- fet element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000005669 field effect Effects 0.000 title claims description 9
- 230000008859 change Effects 0.000 claims description 7
- 239000000126 substance Substances 0.000 claims description 5
- 239000012528 membrane Substances 0.000 claims description 3
- 229920002678 cellulose Polymers 0.000 claims description 2
- 239000001913 cellulose Substances 0.000 claims description 2
- 230000003993 interaction Effects 0.000 claims description 2
- 229910044991 metal oxide Inorganic materials 0.000 claims description 2
- 150000004706 metal oxides Chemical class 0.000 claims description 2
- 239000007784 solid electrolyte Substances 0.000 claims description 2
- 238000003795 desorption Methods 0.000 claims 1
- 238000001179 sorption measurement Methods 0.000 claims 1
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 claims 1
- 229920002554 vinyl polymer Polymers 0.000 claims 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims 1
- 239000012535 impurity Substances 0.000 abstract description 17
- 230000000903 blocking effect Effects 0.000 abstract description 13
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 11
- 229910052581 Si3N4 Inorganic materials 0.000 abstract description 6
- 239000000377 silicon dioxide Substances 0.000 abstract description 5
- 235000012239 silicon dioxide Nutrition 0.000 abstract description 5
- 239000000758 substrate Substances 0.000 abstract description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 4
- 229910052710 silicon Inorganic materials 0.000 abstract description 4
- 239000010703 silicon Substances 0.000 abstract description 4
- 230000006698 induction Effects 0.000 abstract 3
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 239000004020 conductor Substances 0.000 abstract 1
- 230000008878 coupling Effects 0.000 abstract 1
- 238000010168 coupling process Methods 0.000 abstract 1
- 238000005859 coupling reaction Methods 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
- 150000002500 ions Chemical class 0.000 description 20
- 238000010586 diagram Methods 0.000 description 8
- 239000000463 material Substances 0.000 description 8
- 230000000694 effects Effects 0.000 description 7
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 5
- 238000001514 detection method Methods 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000008707 rearrangement Effects 0.000 description 3
- SMEGJBVQLJJKKX-HOTMZDKISA-N [(2R,3S,4S,5R,6R)-5-acetyloxy-3,4,6-trihydroxyoxan-2-yl]methyl acetate Chemical compound CC(=O)OC[C@@H]1[C@H]([C@@H]([C@H]([C@@H](O1)O)OC(=O)C)O)O SMEGJBVQLJJKKX-HOTMZDKISA-N 0.000 description 2
- 229940081735 acetylcellulose Drugs 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 229920002301 cellulose acetate Polymers 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 230000005686 electrostatic field Effects 0.000 description 2
- 230000004807 localization Effects 0.000 description 2
- 230000033001 locomotion Effects 0.000 description 2
- 230000007774 longterm Effects 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 description 1
- 241000282472 Canis lupus familiaris Species 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 239000004372 Polyvinyl alcohol Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 238000001354 calcination Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005421 electrostatic potential Methods 0.000 description 1
- 101150079361 fet5 gene Proteins 0.000 description 1
- 229910003480 inorganic solid Inorganic materials 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 230000010399 physical interaction Effects 0.000 description 1
- 229920002451 polyvinyl alcohol Polymers 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
- G01N27/403—Cells and electrode assemblies
- G01N27/414—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
- G01N27/4141—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS specially adapted for gases
Landscapes
- Life Sciences & Earth Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Health & Medical Sciences (AREA)
- Physics & Mathematics (AREA)
- Biochemistry (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Engineering & Computer Science (AREA)
- Analytical Chemistry (AREA)
- Molecular Biology (AREA)
- General Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)
- Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59023598A JPS60168043A (ja) | 1984-02-10 | 1984-02-10 | Ｆｅｔ型センサ |
| US06/697,640 US4698657A (en) | 1984-02-10 | 1985-02-04 | FET type sensor and a method for driving the same |
| GB08503061A GB2156150B (en) | 1984-02-10 | 1985-02-07 | Fet with an auxiliary electrode at a sensitive layer |
| DE19853504401 DE3504401A1 (de) | 1984-02-10 | 1985-02-08 | Feldeffekttransistortyp-sensor und verfahren zu dessen betrieb |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59023598A JPS60168043A (ja) | 1984-02-10 | 1984-02-10 | Ｆｅｔ型センサ |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60168043A true JPS60168043A (ja) | 1985-08-31 |
| JPH0415902B2 JPH0415902B2 (enrdf_load_html_response) | 1992-03-19 |
Family
ID=12115033
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59023598A Granted JPS60168043A (ja) | 1984-02-10 | 1984-02-10 | Ｆｅｔ型センサ |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60168043A (enrdf_load_html_response) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007533988A (ja) * | 2004-04-22 | 2007-11-22 | マイクロナス ゲーエムベーハー | Ｔｆｔ型ガスセンサーにおけるガスの測定方法及び／又は横感度を低減させる方法 |
| JP2013525808A (ja) * | 2010-05-06 | 2013-06-20 | ソウル・ナショナル・ユニバーシティ・アール・アンド・ディ・ファウンデイション | 容量素子センサー及びその製造方法 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS54141699A (en) * | 1978-04-26 | 1979-11-05 | Olympus Optical Co Ltd | Chemically responding element |
-
1984
- 1984-02-10 JP JP59023598A patent/JPS60168043A/ja active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS54141699A (en) * | 1978-04-26 | 1979-11-05 | Olympus Optical Co Ltd | Chemically responding element |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007533988A (ja) * | 2004-04-22 | 2007-11-22 | マイクロナス ゲーエムベーハー | Ｔｆｔ型ガスセンサーにおけるガスの測定方法及び／又は横感度を低減させる方法 |
| JP2013525808A (ja) * | 2010-05-06 | 2013-06-20 | ソウル・ナショナル・ユニバーシティ・アール・アンド・ディ・ファウンデイション | 容量素子センサー及びその製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0415902B2 (enrdf_load_html_response) | 1992-03-19 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPH0415903B2 (enrdf_load_html_response) | ||
| JPH0376860B2 (enrdf_load_html_response) | ||
| US7053439B2 (en) | Chemoreceptive semiconductor structure | |
| US4698657A (en) | FET type sensor and a method for driving the same | |
| TW201225304A (en) | Chemically sensitive sensor with lightly doped drains | |
| JPS63500739A (ja) | 液相または気相成分を選択的に測定するセンサ | |
| JPH0240973B2 (enrdf_load_html_response) | ||
| EP3217167B1 (en) | Humidity sensors with transistor structures and piezoelectric layer | |
| KR102316202B1 (ko) | 트리플 게이트 구조의 이온전계효과 트랜지스터 기반 고성능 바이오 센서 | |
| JPH0374947B2 (enrdf_load_html_response) | ||
| Ogunleye et al. | Investigation of the sensing mechanism of dual-gate low-voltage organic transistor based pressure sensor | |
| US20080134759A1 (en) | Sensor for Detection and/or Measuring a Concentration of Electrical Charges Contained in an Environment, Corresponding Uses and Method of Manufacture Thereof | |
| Kang et al. | Improved pH sensitivity and reliability for extended gate field-effect transistor sensors using high-K sensing membranes | |
| Lai et al. | Body effect minimization using single layer structure for pH-ISFET applications | |
| JPS60168043A (ja) | Ｆｅｔ型センサ | |
| JPS60194345A (ja) | 電界効果型センサの駆動方法 | |
| JP2546340B2 (ja) | 感湿素子およびその動作回路 | |
| TWI244702B (en) | Titanium oxide thin film for extended gate field effect transistor using reactive sputtering | |
| Prodromakis et al. | Effect of mobile ionic-charge on CMOS based ion-sensitive field-effect transistors (ISFETS) | |
| JPS60181645A (ja) | 複合センサ及びその製造方法 | |
| JPS6189553A (ja) | 集積化酵素ｆｅｔ | |
| US7326974B2 (en) | Sensor for measuring a gas concentration or ion concentration | |
| TWI452290B (zh) | Field-effect ion sensing device with dual-film differential structure | |
| JP2687254B2 (ja) | ガス感応素子 | |
| JPH0313721Y2 (enrdf_load_html_response) |