JPS60165601A - Holography device - Google Patents
Holography deviceInfo
- Publication number
- JPS60165601A JPS60165601A JP2228584A JP2228584A JPS60165601A JP S60165601 A JPS60165601 A JP S60165601A JP 2228584 A JP2228584 A JP 2228584A JP 2228584 A JP2228584 A JP 2228584A JP S60165601 A JPS60165601 A JP S60165601A
- Authority
- JP
- Japan
- Prior art keywords
- phase shifter
- film
- columnar structure
- vapor deposition
- random
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000001093 holography Methods 0.000 title claims description 10
- 238000000034 method Methods 0.000 claims abstract description 26
- 238000005070 sampling Methods 0.000 claims abstract description 15
- 239000000758 substrate Substances 0.000 claims abstract description 14
- 238000007740 vapor deposition Methods 0.000 claims abstract description 11
- 238000004544 sputter deposition Methods 0.000 claims abstract description 9
- 238000005530 etching Methods 0.000 abstract description 7
- 238000004519 manufacturing process Methods 0.000 abstract description 4
- 244000025254 Cannabis sativa Species 0.000 abstract 1
- 239000010408 film Substances 0.000 description 23
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 11
- 239000011521 glass Substances 0.000 description 6
- 239000011787 zinc oxide Substances 0.000 description 5
- 239000013078 crystal Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 239000003989 dielectric material Substances 0.000 description 3
- 230000010363 phase shift Effects 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- 229910052984 zinc sulfide Inorganic materials 0.000 description 2
- 239000005083 Zinc sulfide Substances 0.000 description 1
- 229910000420 cerium oxide Inorganic materials 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- ORUIBWPALBXDOA-UHFFFAOYSA-L magnesium fluoride Chemical compound [F-].[F-].[Mg+2] ORUIBWPALBXDOA-UHFFFAOYSA-L 0.000 description 1
- 229910001635 magnesium fluoride Inorganic materials 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 238000005019 vapor deposition process Methods 0.000 description 1
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/58—After-treatment
- C23C14/5873—Removal of material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
- C23C14/086—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/58—After-treatment
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/18—Diffraction gratings
- G02B5/1847—Manufacturing methods
- G02B5/1857—Manufacturing methods using exposure or etching means, e.g. holography, photolithography, exposure to electron or ion beams
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03H—HOLOGRAPHIC PROCESSES OR APPARATUS
- G03H1/00—Holographic processes or apparatus using light, infrared or ultraviolet waves for obtaining holograms or for obtaining an image from them; Details peculiar thereto
- G03H1/04—Processes or apparatus for producing holograms
- G03H1/16—Processes or apparatus for producing holograms using Fourier transform
Landscapes
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Optics & Photonics (AREA)
- Mathematical Physics (AREA)
- Optical Elements Other Than Lenses (AREA)
- Holo Graphy (AREA)
- Surface Treatment Of Glass (AREA)
Abstract
Description
【発明の詳細な説明】
(産業上の利用分野)
この発明は、ランダム・フェーズ・サンプリング法また
はアナログ・ランダム・フェーズシフタ法を用いたホロ
グラフィ装置に関する。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to a holography device using a random phase sampling method or an analog random phase shifter method.
(従来技術とその問題点)
画像情報の高密度記録として用いられるフーリエ変換形
ホログラフィにおいては、記録媒体のダイナミックレン
ジの有限性あるいは^コヒーレンス光源からの光ビーム
同士の自己干渉などにより、いわゆるスパイクノイズ、
スペックルノイズが生じ易く、これらは何れも両生像の
画質を低下させる要因となっていた。(Prior art and its problems) In Fourier transform holography, which is used for high-density recording of image information, so-called spike noise occurs due to the finite dynamic range of the recording medium or self-interference between light beams from a coherence light source. ,
Speckle noise is likely to occur, and both of these are factors that reduce the image quality of both raw images.
そこで、記録すべき情報サイズに依存して、決まる適当
な間隔で空間的サンプリングを行ない空間周波スペクト
ル帯域圧縮を施して記録再生することにより、スペック
ルノイズ等を減少させ、実用上支障のない^品位画像を
得るようにした方法が提案されている。これがランダム
・フェーズ・サンプリング法と言われるものであり、こ
れがさらに変形改良されてアナログ・ランダム・フェー
ズシフタ法となっている。Therefore, by performing spatial sampling at appropriate intervals determined depending on the size of information to be recorded and performing recording and reproducing with spatial frequency spectral band compression, speckle noise etc. can be reduced and there is no problem in practical use. A method for obtaining quality images has been proposed. This is called the random phase sampling method, which has been further modified and improved to become the analog random phase shifter method.
ランダム・フェーズ・サンプリング法またはアナログ・
ランダム・フェーズシフタ法を用いたホログラフィ装置
については、昭和48年5月発行に係わる電子通信学会
論文誌Vo1. 56−ONo、5あるいは特公昭51
−44824号公報などに詳しい。Random phase sampling method or analog
A holography device using the random phase shifter method is described in the Journal of the Institute of Electronics and Communication Engineers Vol. 1, published in May 1970. 56-ONo, 5 or Tokko Sho 51
-44824 publication etc. are detailed.
ところで、従来、この種のホログラフィ装置に用いられ
るフェーズシフタとしては、何れもガラス基板上に特殊
なマスクを介して酸化セリウム。By the way, conventionally, as a phase shifter used in this type of holography device, cerium oxide is deposited on a glass substrate through a special mask.
硫化亜鉛、弗化マグネシウムなどの透明誘電体を蒸着さ
せたものを用いていた。They used vapor-deposited transparent dielectrics such as zinc sulfide and magnesium fluoride.
これについて詳述すると、ランダム・フェーズ・サンプ
リング法に用いられるフェーズシフタの場合には、併用
するサンプリングメツシュの穴間隔に合せかつ式選択が
ランダム化されたパターンマスクを別途作成し、このマ
スクを基板に被せた状態で透明誘電体を数段階に亘り蒸
着することにより作成される。To explain this in detail, in the case of a phase shifter used in the random phase sampling method, a pattern mask is created separately that matches the hole spacing of the sampling mesh to be used and the expression selection is randomized, and this mask is It is created by depositing a transparent dielectric in several stages over a substrate.
また、アナログ・ランダム・フェーズシフタ法に用いら
れるフェーズシフタの場合には、やはり前述と同様のマ
スクを用い、これを基板上からある程度隔てた状態で支
持した後、このマスクを通過させて同様に透明誘電体を
蒸着し、もって蒸着端面にJ:り緩やかなテーバ形状を
付与させたものとしている。In addition, in the case of a phase shifter used in the analog random phase shifter method, a mask similar to that described above is used, and after supporting this at a certain distance from the substrate, the mask is passed through and the same process is performed. A transparent dielectric material is deposited to give the deposited end face a gentle tapered shape.
しかしながら、何れのフェーズシフタ作成に当たっても
、従来では、所定ランダムパターンを形成した蒸着用マ
スクが別途必要であり、また、蒸着工程等も相当に複雑
であることから、全体としてフェーズシフタ作成工程が
面倒であり、装置のコストアップに繋がっていた。However, to create any phase shifter, conventionally, a vapor deposition mask with a predetermined random pattern formed thereon is required separately, and the vapor deposition process is also quite complicated, making the overall phase shifter creation process cumbersome. This led to an increase in the cost of the device.
(発明の目的)
この発明の目的は、この種のホログラフィ装置における
フェーズシフタの製作を容易とし、装置のコストダウン
を図ることにある。(Objective of the Invention) An object of the present invention is to facilitate the manufacture of a phase shifter in this type of holography device and to reduce the cost of the device.
(発明の構成)
この発明は、前記目的を達成するために、フェーズシフ
タとして、ガラス板などの透明基板上に柱状構造膜を直
接スパッタまたは蒸着により形成したもの、あるいはこ
れら柱状構造膜をさらに化学エツチングを施して形成し
たものを用いたことを特徴とするものである。(Structure of the Invention) In order to achieve the above object, the present invention provides a phase shifter in which a columnar structure film is directly formed on a transparent substrate such as a glass plate by sputtering or vapor deposition, or a columnar structure film is further formed by chemically depositing the columnar structure film on a transparent substrate such as a glass plate. It is characterized in that it is formed by etching.
(実施例の説明)
第1図は、この発明の一実施例を説明するためのランダ
ム・フェーズ・サンプリング法による小口グラフィ装置
の基本構成を示す模式図である。(Description of Embodiment) FIG. 1 is a schematic diagram showing the basic configuration of a fore-edge imaging device using a random phase sampling method for explaining an embodiment of the present invention.
同図において、情報照明光1は、レンズ2で東京された
後、この発明に係るフェーズシフタ3゜サンプリングメ
ツシュ4および画像5を経由した後、情報光6となって
画像記録媒体7の表面に照射されるとともに、ここに同
時に参照光8が照射され、とれにより記録媒体7上にホ
ログラム記録層9が形成される。In the figure, information illumination light 1 is reflected by a lens 2, passes through a phase shifter 3 according to the present invention, a sampling mesh 4, and an image 5, and then becomes information light 6 on the surface of an image recording medium 7. At the same time, the reference beam 8 is also irradiated here, and a hologram recording layer 9 is formed on the recording medium 7 due to the cracking.
ここで、記録媒体7としては、写真フィルム。Here, the recording medium 7 is a photographic film.
光磁気記録媒体などが使用される。A magneto-optical recording medium is used.
次に、この発明に係るフェーズシフタ3について詳しく
説明する。このフェーズシフタ3は、ガラス基板10の
表面に、透明誘電体、ここでは六方晶系ウルツ鉱型結晶
構造を有する酸化亜鉛(2no)を用いているが、この
酸化亜鉛を何等マスクを介することなく、直接的にスパ
ッタまたは蒸着工程によって薄膜状に形成したものが用
いられている。Next, the phase shifter 3 according to the present invention will be explained in detail. This phase shifter 3 uses a transparent dielectric material, here zinc oxide (2no) having a hexagonal wurtzite crystal structure, on the surface of the glass substrate 10, but this zinc oxide is not passed through any mask. A thin film formed directly by sputtering or vapor deposition is used.
この酸化亜鉛のスパッタまたは蒸着膜11は、そのC軸
が下地ガラス基板10に垂直に配向した柱状構造を有す
る多結晶薄膜となっており、この柱状構造は、第2図(
a)に断面形状として示す如く、平均厚さDa=1μ回
〜数十μ11平均凹5−
凸深さΔD=100no+ 〜800nm、平均凹凸ピ
ッチpa=o、iμm〜数十μn+程度の形状を呈して
いる。そして、この柱状構造膜11のランダム凹凸がラ
ンダム・フェーズ・サンプリング法におけるフェーズシ
フタ3として極めて有効に作用することが確認された。This sputtered or vapor-deposited zinc oxide film 11 is a polycrystalline thin film having a columnar structure in which its C axis is oriented perpendicularly to the underlying glass substrate 10.
As shown in the cross-sectional shape in a), the average thickness Da = 1 μm to several tens of μm, average concave depth ΔD = 100 μm to 800 nm, and the average uneven pitch Pa = o, iμm to several tens of μn+. ing. It has been confirmed that the random irregularities of the columnar structure film 11 function extremely effectively as the phase shifter 3 in the random phase sampling method.
この柱状構造膜11は、前記スパッタまたは蒸着時の諸
条件を変化させることにより、膜厚あるいは表面凹凸形
状等を適宜変えることができ、もってフェーズシフタ3
としての特性を種々変化させることが可能となっている
。例えば、作成時の基板濃度を変化させると、各結晶柱
の直径を制御することができる。By changing the various conditions during the sputtering or vapor deposition, the columnar structure film 11 can have its film thickness, surface unevenness, etc. changed as appropriate, and thus the phase shifter 3
It is possible to change the characteristics of the material in various ways. For example, the diameter of each crystal pillar can be controlled by varying the substrate concentration during fabrication.
そして、さらに積極的に、フェーズシフタ3の特性制御
を行なう方法としては、この柱状構造膜11を酸等で化
学的にエツチングする方法が挙げられる。As a method for more actively controlling the characteristics of the phase shifter 3, there is a method of chemically etching the columnar structure film 11 with acid or the like.
すなわち、この柱状構造[1111は、各結晶柱の境界
が結晶粒界となっており、酸、例えば弗酸等によりこの
躾11をエツチングすると、膜表面の6−
粒界構造部から徐々に融解して行き、このエツチング時
間を調整することによって、この各結晶柱の形状を相当
量変化させることができる。例えば、所定時間内のエツ
チングであれば、その時間を長くづればするほど平均凹
凸深さΔDを増加させることができ、これによって、フ
ェーズシフタ3としてもつども良好な画像再生の得られ
るΔD=10OnIll〜800 n1llの範囲の形
状とすることが極めて容易となる。That is, in this columnar structure [1111], the boundary between each crystal column is a grain boundary, and when this columnar structure [1111] is etched with an acid such as hydrofluoric acid, it gradually melts from the grain boundary structure on the film surface. By adjusting the etching time, the shape of each crystal pillar can be changed considerably. For example, if etching is performed within a predetermined period of time, the longer the period of time is, the more the average depth of unevenness ΔD can be increased. It is extremely easy to form a shape in the range of 800 n1ll.
なお、これら膜11の柱状構造、およびその平均凹凸深
さΔD等の状態変化は、電子顕微鏡やSEMIIIを用
いた直接観察により容易に確認し得る。Note that the columnar structure of the film 11 and changes in its state such as the average unevenness depth ΔD can be easily confirmed by direct observation using an electron microscope or SEMIII.
また、第2図(a )に示す柱状構造膜11をさらに長
時間エツチングし続けると、ついには、第2図(b )
に断面形状として示すように、島状に透明誘電体柱が散
在するような形状を呈してくる。Furthermore, if the columnar structure film 11 shown in FIG. 2(a) is continued to be etched for a longer period of time, it will finally be etched as shown in FIG. 2(b).
As shown in the cross-sectional shape, it takes on a shape in which transparent dielectric columns are scattered like islands.
この状態における各島状柱構造体の表面は、極めて緩や
かかつ連続性を有するテーパ面となっており、この島の
大きさと密度を調整してやると、これら島状柱構造膜1
1は、前述したアナログ・ランダム・フェーズシフタ法
に用いるフェーズシフタとして充分有効となることが確
認された。The surface of each island-like columnar structure in this state is an extremely gentle and continuous tapered surface, and if the size and density of this island are adjusted, these island-like columnar structure films 1
1 was confirmed to be sufficiently effective as a phase shifter used in the analog random phase shifter method described above.
アナログ・ランダム・フェーズシフタ法を用いるホログ
ラフィti@の構成は、第1図の装置構成からサンプリ
ングメツシュ4を省略した形となるが、この方法では、
サンプリングメツシュ4を介さないため、フェーズシフ
タ3による光ビーム集中を極り防ぐ必要があった。とこ
ろで、第2図(a)のような柱状構造膜11は、この方
法に適用した場合表面凹凸の境界変化が未だ急峻過ぎて
、この急峻変化部分で光ビームが集中してしまい易く、
この点問題であったが、第2図(0)のような島状杆構
Ti1I!11′によれば、その表面が呈する緩やかな
テーパは、はとんど光ビームの集中を発生させることな
く、光ビームを連続的かつランダムに分散し得るので、
発明者の実験結果によれば極めて高解像力かつスペック
ルノイズの少ない、相当に良質の再生画像を得ることが
できた。The configuration of holography ti@ that uses the analog random phase shifter method is the same as the device configuration shown in FIG. 1 with the sampling mesh 4 omitted, but in this method,
Since the sampling mesh 4 is not used, it is necessary to prevent the light beam from being concentrated by the phase shifter 3 as much as possible. By the way, when this method is applied to the columnar structure film 11 as shown in FIG. 2(a), the boundary change of the surface unevenness is still too steep, and the light beam is likely to be concentrated at this steep change part.
This was a problem, but the island-shaped rod structure Ti1I as shown in Figure 2 (0)! According to No. 11', the gentle taper exhibited by the surface can disperse the light beam continuously and randomly without causing any concentration of the light beam.
According to the inventor's experimental results, it was possible to obtain a reproduced image of extremely high resolution and relatively high quality with little speckle noise.
なお、以上の実施例の何れにおいても、この柱状構造膜
からなるフェーズシフタは、膜自体の光透過率およびフ
ェーズシフト効果が高く、ホログラフィ記録媒体として
は低感度である光磁気記録媒体を用いた場合にも極めて
良質の画像記録再生が達成されている。In any of the above examples, the phase shifter made of this columnar structure film uses a magneto-optical recording medium, which has high light transmittance and phase shift effect of the film itself, and has low sensitivity as a holographic recording medium. In some cases, extremely high quality image recording and reproduction has been achieved.
また、以上の実施例においては、スパッタまたは蒸着材
料として酸化亜鉛を用いた例を示したが、この発明はこ
れに限らず、柱状構fi膜を形成する材料であれば種々
の材料の適用が可能である。Further, in the above embodiments, an example was shown in which zinc oxide was used as a sputtering or vapor deposition material, but the present invention is not limited to this, and various materials can be applied as long as they form a columnar structure film. It is possible.
(発明の効果)
以上のように、この発明のホログラフィ装置は、フェー
ズシックとして、透明基板上に直接的にスパッタまたは
蒸着により形成された柱状構造膜を用いたので、従来の
如くフェーズシフタの作成に当たって特殊なマスク等を
必要とせず、かつ工程も簡略化されて、フェーズシフタ
の製造が容易でコストダウンを図ることができるにも拘
わらず、この柱状構造膜はランダム・フェーズ・サンプ
リング法のみならず、アナログ・ランダム・フェーズシ
フタ法への適用も可能であり、かつ何れの場合にも実用
上充分な高性能を有するものとなり、9−
ホログラフィ記録再生像は、極めて高解像力かつスペッ
クルノイズの少ない良質のものが得られ、その実用的効
果は極めて大きいものである。(Effects of the Invention) As described above, since the holography device of the present invention uses a columnar structure film formed directly on a transparent substrate by sputtering or vapor deposition as a phase shift, it is possible to create a phase shifter as in the conventional method. Although this columnar structure film does not require special masks and the process is simplified, making it easy to manufacture phase shifters and reducing costs, this columnar structure film cannot be produced using only the random phase sampling method. In addition, it is also possible to apply it to the analog random phase shifter method, and in any case, it has sufficient high performance for practical use. A small amount of high quality material can be obtained, and its practical effects are extremely large.
また、フェーズシフタとしての特性制御も容易であり、
特性的には光透過率およびフェーズシフト効果が大きい
ので、低感度の光磁気記録媒体を用いた場合にも充分良
好な画像記録再生が達成し得る等積々の効果を秦する。In addition, it is easy to control the characteristics as a phase shifter.
Characteristically, the light transmittance and phase shift effect are large, so that even when a low-sensitivity magneto-optical recording medium is used, sufficiently good image recording and reproduction can be achieved.
第1図は本発明に係わるホログラフィ装置の基本構成を
示す模式図、第2図(a)(b)は何れもこの発明のフ
ェーズシフタを構成する柱状構造膜の状態を示す断面図
であり、第2図(a)はほぼスパッタまたは蒸着直後の
柱状構造膜を示す図であり、第2図(b)はエツチング
により島状柱構造とした状態を示す図である。
1・・・情報照明光
2・・・レンズ
3・・・フェーズシフタ
4・・・サンプリングメツシュ
10−
5・・・・・・・・・・・・・・・・・・画像6・・・
・・・・・・・・・・・・・・・情報光7・・・・・・
・・・・・・・・・・・・記録媒体8・・・・・・・・
・・・・・・・・・・参照光9・・・・・・・・・・・
・・・・・・・ホログラム記録層10・・・・・・・・
・・・・・・・ガラス基板11.11”・・・酸化亜鉛
のスパッタ膜特許出願人
日本楽器製造株式会社
11−
第1図FIG. 1 is a schematic diagram showing the basic configuration of a holography device according to the present invention, and FIGS. 2(a) and 2(b) are sectional views showing the state of a columnar structure film constituting the phase shifter of the present invention. FIG. 2(a) is a diagram showing a columnar structure film almost immediately after sputtering or vapor deposition, and FIG. 2(b) is a diagram showing an island-shaped columnar structure formed by etching. 1... Information illumination light 2... Lens 3... Phase shifter 4... Sampling mesh 10- 5... Image 6...・
・・・・・・・・・・・・ Information light 7・・・・・・
・・・・・・・・・・・・Recording medium 8・・・・・・・・・
・・・・・・・・・Reference light 9・・・・・・・・・・・・
......Hologram recording layer 10...
...Glass substrate 11.11"...Zinc oxide sputtered film Patent applicant Nippon Gakki Manufacturing Co., Ltd. 11- Figure 1
Claims (1)
ランダム・フェーズシフタ法を用いたホログラフィ装置
において、フェーズシフタとして、透明基板上に直接的
にスパッタまたは蒸着により形成された柱状構造膜を用
いたことを特徴とするホログラフィ装置。Random phase sampling method or analog
A holography device using a random phase shifter method, characterized in that a columnar structure film formed directly on a transparent substrate by sputtering or vapor deposition is used as a phase shifter.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2228584A JPS60165601A (en) | 1984-02-09 | 1984-02-09 | Holography device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2228584A JPS60165601A (en) | 1984-02-09 | 1984-02-09 | Holography device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS60165601A true JPS60165601A (en) | 1985-08-28 |
JPH0433039B2 JPH0433039B2 (en) | 1992-06-01 |
Family
ID=12078473
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2228584A Granted JPS60165601A (en) | 1984-02-09 | 1984-02-09 | Holography device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS60165601A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5159473A (en) * | 1991-02-27 | 1992-10-27 | University Of North Carolina | Apparatus and method for programmable optical interconnections |
FR2839083A1 (en) * | 2003-04-08 | 2003-10-31 | Plastal | Artifact, e.g. car artifacts, comprises substrate coated by vacuum deposition technique with transparent film, where micro-morphology of transparent coating-air interface is not consistent with that of substrate-coating interface |
EP1305656A4 (en) * | 2000-07-31 | 2006-03-08 | Rochester Photonics Corp | Structure screens for controlled spreading of light |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS51112488A (en) * | 1975-03-28 | 1976-10-04 | Matsushita Electric Ind Co Ltd | Method of producing a zinc oxide film |
-
1984
- 1984-02-09 JP JP2228584A patent/JPS60165601A/en active Granted
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS51112488A (en) * | 1975-03-28 | 1976-10-04 | Matsushita Electric Ind Co Ltd | Method of producing a zinc oxide film |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5159473A (en) * | 1991-02-27 | 1992-10-27 | University Of North Carolina | Apparatus and method for programmable optical interconnections |
EP1305656A4 (en) * | 2000-07-31 | 2006-03-08 | Rochester Photonics Corp | Structure screens for controlled spreading of light |
FR2839083A1 (en) * | 2003-04-08 | 2003-10-31 | Plastal | Artifact, e.g. car artifacts, comprises substrate coated by vacuum deposition technique with transparent film, where micro-morphology of transparent coating-air interface is not consistent with that of substrate-coating interface |
Also Published As
Publication number | Publication date |
---|---|
JPH0433039B2 (en) | 1992-06-01 |
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