JPS60158629A - マイクロ波プラズマ処理装置 - Google Patents

マイクロ波プラズマ処理装置

Info

Publication number
JPS60158629A
JPS60158629A JP1325184A JP1325184A JPS60158629A JP S60158629 A JPS60158629 A JP S60158629A JP 1325184 A JP1325184 A JP 1325184A JP 1325184 A JP1325184 A JP 1325184A JP S60158629 A JPS60158629 A JP S60158629A
Authority
JP
Japan
Prior art keywords
electrode
plasma
frequency bias
plasma processing
high frequency
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1325184A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0469414B2 (enrdf_load_html_response
Inventor
Noriaki Yamamoto
山本　則明
Fumio Shibata
柴田　史雄
Norio Kanai
金井　謙雄
Sadayuki Okudaira
奥平　定之
Shigeru Nishimatsu
西松　茂
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP1325184A priority Critical patent/JPS60158629A/ja
Publication of JPS60158629A publication Critical patent/JPS60158629A/ja
Publication of JPH0469414B2 publication Critical patent/JPH0469414B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
JP1325184A 1984-01-30 1984-01-30 マイクロ波プラズマ処理装置 Granted JPS60158629A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1325184A JPS60158629A (ja) 1984-01-30 1984-01-30 マイクロ波プラズマ処理装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1325184A JPS60158629A (ja) 1984-01-30 1984-01-30 マイクロ波プラズマ処理装置

Publications (2)

Publication Number Publication Date
JPS60158629A true JPS60158629A (ja) 1985-08-20
JPH0469414B2 JPH0469414B2 (enrdf_load_html_response) 1992-11-06

Family

ID=11827987

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1325184A Granted JPS60158629A (ja) 1984-01-30 1984-01-30 マイクロ波プラズマ処理装置

Country Status (1)

Country Link
JP (1) JPS60158629A (enrdf_load_html_response)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0286127A (ja) * 1988-09-22 1990-03-27 Hitachi Ltd プラズマクリーニング方法
JP2000208496A (ja) * 1999-01-19 2000-07-28 Hitachi Ltd ドライエッチング装置および半導体装置の製造方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0286127A (ja) * 1988-09-22 1990-03-27 Hitachi Ltd プラズマクリーニング方法
JP2000208496A (ja) * 1999-01-19 2000-07-28 Hitachi Ltd ドライエッチング装置および半導体装置の製造方法

Also Published As

Publication number Publication date
JPH0469414B2 (enrdf_load_html_response) 1992-11-06

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