JPS60157725A - Magnetic storage medium - Google Patents
Magnetic storage mediumInfo
- Publication number
- JPS60157725A JPS60157725A JP1256284A JP1256284A JPS60157725A JP S60157725 A JPS60157725 A JP S60157725A JP 1256284 A JP1256284 A JP 1256284A JP 1256284 A JP1256284 A JP 1256284A JP S60157725 A JPS60157725 A JP S60157725A
- Authority
- JP
- Japan
- Prior art keywords
- protective film
- storage medium
- hydrocarbon
- magnetic storage
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
Description
【発明の詳細な説明】
本発明は磁気記憶媒体、符に面湿度朱件下に暴露された
恢でも耐摩耗性のすぐれた録1i!II川、録廿用ある
いは゛畦算磯に用いられるテーク0状、ドラム状あるい
はディスク状の磁気記憶媒体に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention provides a magnetic storage medium that exhibits excellent abrasion resistance even when exposed to humid conditions. The present invention relates to a magnetic storage medium in the form of a disk, drum, or disk used for recording or recording.
近年、記録密度の向上の目的のもとに、鉄、コバルト、
ニッケルまたはこれらの合金からなる強磁性金塊薄膜を
真空蒸着、スパッタリングまたはメッキ法で基体上に付
した磁気記憶媒体が提案さガている。こ4らの金塊磁気
記憶媒体は誦密度記録性に優れているが、記録再生装置
に使用すると磁気ヘッド寺と物理的に接触しながら高速
度走行をするので、耐摩耗性が優れていなげれば実用的
でない。In recent years, with the aim of improving recording density, iron, cobalt,
Magnetic storage media have been proposed in which a thin ferromagnetic gold ingot film made of nickel or an alloy thereof is deposited on a substrate by vacuum deposition, sputtering, or plating. These four gold bullion magnetic storage media have excellent recording density, but when used in recording and reproducing devices, they run at high speed while physically contacting the magnetic head, so they have excellent wear resistance. It's not practical.
耐摩耗性を向上させるために、強個性体金属の表面に液
体または固体のパラフィンなどの炭化水素類からなる@
滑剤を塗布するか、又は真空蒸涜法により薄膜を形成す
ることが提案されている。In order to improve wear resistance, liquid or solid hydrocarbons such as paraffin are coated on the surface of the strong metal.
It has been proposed to apply a lubricant or to form a thin film by vacuum ablation.
これらの塗布方法あるいは真空煮層法で形成された炭化
水素9f:峡膜は架橋されて赴らず浴剤に可溶であるの
で、常態での耐摩耗性はを九でいるが、尚湿度条件下に
暴露した後ではその1ltl’l岸耗訃が者しく劣化す
るという欠点かある。The hydrocarbon 9f film formed by these coating methods or the vacuum boiling method is not cross-linked and is soluble in bath additives, so its abrasion resistance under normal conditions is 9, but even when exposed to humidity. It has the disadvantage that after being exposed to such conditions, its wear and tear deteriorates significantly.
本兄明者らは、これら欠点乞改筈するために檎棟の研究
を行なった精米、磁気記憶媒体の保護扱換として高置に
架橋した炭化水素族か尚湿度条件下に暴胤しても耐摩耗
性が劣化しないという知見に基づいて本発明に到達した
ものであする。In order to remedy these shortcomings, the present inventors have conducted research on rice milling and the protection of magnetic storage media by cross-linking hydrocarbons at high elevations or by using them under humid conditions. The present invention was arrived at based on the knowledge that the wear resistance does not deteriorate even in the case of abrasion resistance.
すなわち、本発明は基体の上に強磁性釡属薄族を設けた
磁気記憶媒体の表面に架橋した炭化水素保護膜を形成さ
せてなる8B気記憶媒体である。That is, the present invention is an 8B magnetic storage medium in which a crosslinked hydrocarbon protective film is formed on the surface of a magnetic storage medium in which a ferromagnetic metal layer is provided on a base.
以下さらに本発明の詳細な説明する。The present invention will be further explained in detail below.
本発明において、架橋した炭化水素保H1模(以下保護
膜という)とは飽和炭化水素ガスのイメーン化プラズマ
分解重合、あるいは炭化水素ガスを含む雰囲気中でカー
ボンターゲットを/マイアススノ七ツタリングする寺の
方法で形成することかできる。In the present invention, the cross-linked hydrocarbon-retaining H1 layer (hereinafter referred to as a protective film) refers to the image plasma decomposition polymerization of saturated hydrocarbon gas, or the method of slapping a carbon target in an atmosphere containing hydrocarbon gas. It can be formed by
本発明に係る保護膜は浴剤に不浴であり、その赤外分光
分析によるとC−H結会の吸収ビークカタ存在し、その
元素分析ではO/ [(のモル比で50150以下の水
系が言有さハて℃・るもQ)である。The protective film according to the present invention is not bathed in bath agents, and its infrared spectroscopic analysis shows that absorption peaks of C-H bonds exist, and its elemental analysis shows that an aqueous system with a molar ratio of O/[() of 50150 or less It is true that there are words.
水系の含有量が少なくなると、膜の硬度は増加すると共
にその円部応力および動摩際保数も増加する。従って、
磁気記憶媒体の保護族として(よ、C/Hのモル比で5
0150から98/2の範囲0.)ものが好ましく、特
に好ましい範囲としては60/4Llから91J/10
である。As the aqueous content decreases, the hardness of the film increases as well as its circular stress and dynamic friction coefficient. Therefore,
As a protective group for magnetic storage media (Y, C/H molar ratio 5
Range 0.0150 to 98/2. ) is preferred, and a particularly preferred range is from 60/4Ll to 91J/10
It is.
保護膜は高湿度条件下に暴露した後でも非常に硬く、な
おかつ非常に小さな摩擦係数をもって℃するので、磁気
記憶媒体上に積層された場合、保護族として特に優れた
ものである。本発明品以外θつものは高湿度条件下使用
する場合実用Ill′シでQまなX、1゜保@膜の厚み
としては、好ましくは20口O又以下、特に好ましくは
10口OXg下であり、それ以上の厚みになるとスペー
シングロスが太きくなる。The protective film is particularly good as a protective layer when laminated onto a magnetic storage medium because it is very hard even after exposure to high humidity conditions and still has a very low coefficient of friction. When using products other than those of the present invention under high humidity conditions, in practical use, the film thickness should be maintained at 1°, preferably 20 mm or less, and particularly preferably 10 mm or less. Yes, if the thickness is greater than that, the spacing loss will increase.
本発明品を装造する方法について説明する。A method for assembling the product of the present invention will be explained.
本発明に係る保護族の作成する装置としては具捧的には
イオン化プラズマ分屏厘合装置やバイヤススパッタリン
グ装置があけしれる。Specifically, the apparatus produced by the protection group according to the present invention includes an ionized plasma separation apparatus and a bias sputtering apparatus.
第1図はイオン化プラズマ分解厘合装置の説明図である
。反応容器4は反応容器台の上に気槽か保持され心よう
に構成されたもので、反応容器台5には炭化水素ガス供
給口6及び排気ポンプに接続された排気−1f7が設け
られている。また、反応容器4内には電極2,3によっ
てプラズマ乞発生させ、前記電極2上に設置した保護膜
の板層さ7Lる磁気記憶媒体には電極2と同じ電位が印
加されており、この磁気記憶媒体上でイオン化フ0ラズ
マ分解重合により保護膜な形成させるように構、=され
たものである。FIG. 1 is an explanatory diagram of an ionization plasma decomposition device. The reaction vessel 4 is arranged in a central manner with an air tank held on a reaction vessel stand, and the reaction vessel stand 5 is provided with a hydrocarbon gas supply port 6 and an exhaust port 1f7 connected to an exhaust pump. There is. In addition, plasma is generated in the reaction vessel 4 by electrodes 2 and 3, and the same potential as that of the electrode 2 is applied to the magnetic storage medium having a protective film layer 7L placed on the electrode 2. A protective film is formed on a magnetic storage medium by ionization plasma decomposition polymerization.
第2図はバイアススパッタリング装置の説明Qである。FIG. 2 is an explanation Q of the bias sputtering device.
反応容器14は気密が保持されるように構成されたもの
で、反応容器14には炭化水素ガス供給口15及び排気
ポンプに接続された排気管16が設けられている。また
反応容器14円にはバイアス′亀#t12に接続された
磁気ディスク8及びディスクホルダー9が配置され、更
に上記磁気ディスク8と適当な間隔を介してスパッタリ
ング屯Wに接続されたカーボンターゲット1u及びター
ゲットホルダー11が配置されている。この装置Kより
、スパッタリングされたカーボン粒子か炭化水系を含む
プラズマ中で反応し、磁気ディスク表面に保護膜が形成
される。The reaction vessel 14 is configured to be airtight, and is provided with a hydrocarbon gas supply port 15 and an exhaust pipe 16 connected to an exhaust pump. Further, a magnetic disk 8 and a disk holder 9 connected to a bias mechanism #t12 are arranged in the reaction vessel 14, and a carbon target 1u and a disk holder 9 are connected to the sputtering tunnel W through an appropriate distance from the magnetic disk 8. A target holder 11 is arranged. In this device K, sputtered carbon particles react in plasma containing a hydrocarbon system, and a protective film is formed on the surface of the magnetic disk.
このような装置に原料ガスとしてC2H2r C2H4
+02H6,O[(4,C!、Hloなどの飽和あろい
ば不飽第1の炭化水素、C6H6,C6H工、などの常
温・電圧で液体の炭化水素乞ガス化したもの、又はこれ
らのガス状炭化水系とAr、He、Ne、H2などの炭
化水素以外のガスとの混合ガスを供箔し、装置内に設け
た磁性層を具えた磁気記憶媒体の表向に保護膜を形成さ
せることができる。C2H2r C2H4 is used as raw material gas in such equipment.
+02H6,O[(4,C!, Hlo and other saturated or unsaturated hydrocarbons, C6H6, C6H, etc., which are liquid hydrocarbons gasified at room temperature and voltage, or these gases To form a protective film on the surface of a magnetic storage medium provided with a magnetic layer provided in an apparatus by supplying a mixed gas of a hydrocarbon-based gas and a gas other than hydrocarbons such as Ar, He, Ne, H2, etc. I can do it.
なお、本発明において、保護膜は磁性層の上に直接形成
しても良いが、Au 、Pt 、NニーP 、Or 。In the present invention, the protective film may be formed directly on the magnetic layer, but may be formed using Au, Pt, N, P, Or.
Ni、5i02. Si、Ti、Ti−C,Eli3N
4等の非磁性下地層を介して形成させることもできる。Ni, 5i02. Si, Ti, Ti-C, Eli3N
It can also be formed through a non-magnetic underlayer such as No. 4.
イオン化プラズマ分解重合装置の操作条件としては反応
器ビタの圧力’v o、o o i〜I CI Tor
rとし、電極間に200〜2000 ’Vの直びLある
いは交流の電圧を印加するか又は200〜2UtllL
IVの100 KH2〜29 MH2の尚周V屯圧乞印
加することが好ましい。The operating conditions for the ionization plasma decomposition polymerization apparatus are the pressure in the reactor 'vo, o o i ~ I CI Tor.
r, and apply a direct or alternating voltage of 200 to 2000'V between the electrodes or 200 to 2UtllL.
It is preferable to apply an IV pressure of 100 KH2 to 29 MH2.
又、バイヤススパッタリング装置の操作条件の要因とし
てはガス圧力、スパッタリング電源、デバイス電圧及び
反応時間などあるか、これらの条件は装置の形状、犬ぎ
さなどによって変るので、特定は困難であるか通常用い
られている条件で行えばよい。In addition, the operating conditions for bias sputtering equipment include gas pressure, sputtering power source, device voltage, and reaction time, etc., but these conditions vary depending on the shape of the equipment, size, etc., so it is difficult to specify or it is not normally used. This can be done under the conditions specified.
以上説明したように本発明は磁気6己憬媒俸のべ而に炭
素/水素の割合がモル比で50150〜98/2である
架橋した炭化水素買保護族を形成させてなる磁気記憶媒
体であって、本発明によれば高湿度条件下に暴露しても
l111t摩耗性が劣化しないというすぐれた効果を有
するものである。As explained above, the present invention provides a magnetic storage medium in which a cross-linked hydrocarbon group having a carbon/hydrogen ratio of 50,150 to 98/2 in molar ratio is formed in a magnetic 6 self-promoting medium. Accordingly, the present invention has the excellent effect that l111t abrasion resistance does not deteriorate even when exposed to high humidity conditions.
以下実施例をあげてさらに評しく説明する。The present invention will be further described below with reference to Examples.
実施例1
直゛径9cnlX 厚み2 rruπの鏡面研摩したア
ルミ板上に非磁性N1−pを50μm厚に無′亀屏メッ
キした後、60μm厚まで説面仙摩し、史にその上に1
記のようなメッキ液、メッキ条件でco−nl−p (
ao : 80%。Example 1 A mirror-polished aluminum plate with a diameter of 9 cm and a thickness of 2 rruπ was plated with non-magnetic N1-P to a thickness of 50 μm, then polished to a thickness of 60 μm, and then 1
Co-nl-p (
ao: 80%.
Ni : 15%、P:5%)の磁性NAk 0.1
μm犀となるように無電解メッキした。無電解メッキの
前処理としては日本カニゼン(株)の1シユーマセンシ
タイず−」及び[シューマアクチベータ−」を使用した
。(Ni: 15%, P: 5%) magnetic NAk 0.1
Electroless plating was performed to obtain μm rhinoceros. As a pretreatment for electroless plating, Nippon Kanigen Co., Ltd.'s 1 Schumer Sensitizer and Schumer Activator were used.
〔メッキ条件〕pHニア、5、液温: 75 ’C該メ
ッキディスクをメッキディスクAとして試料に供した。[Plating conditions] pH near: 5, liquid temperature: 75'C The plated disk was used as a sample as plated disk A.
磁気記憶媒体の製造
第1図に示す構造のイオン化プラズマ分屏厘合装置を用
いて、各檎炭化水素ガスを原料とし、第2衣に示す条件
でメッキディスクA上に800X厚の尚度に架倫した炭
化水素#馨形成した。Manufacture of magnetic storage media Using an ionized plasma separation device with the structure shown in Fig. 1, using each apple hydrocarbon gas as a raw material, a plated disk A with a thickness of 800X was coated under the conditions shown in Fig. 2. A hydrocarbon was formed.
比較のために、融虞50〜70″Cのバラフィンヲシク
ロヘキサンヲ浴妹としてスビ7コ h(Hでメンキディ
スクA上に80o X厚で施したものを作成したく実験
A67)。For comparison, I would like to create a bath of paraffin with a melting point of 50 to 70''C in cyclohexane at a thickness of 80 degrees on a menki disc A (Experiment A67).
第2 表
(注)Do・・・直流、AC・・交流の略第6表
また\央験/161ゝ加0と原料ガス、ガスの圧力、印
加電圧を同乗性にし長比1時+jliJたけン艮くして
厚膜を作成し、c、g元系分夕「馨した精米ゼ第4次に
示す。Table 2 (Note) Do... Direct current, AC... Alternating current Table 6 Also, assuming that the raw material gas, gas pressure, and applied voltage are the same as 0, the raw material gas, the gas pressure, and the applied voltage, the long ratio is 1 + jliJ The fourth step is to polish the rice to create a thick film, then divide the C and G elements.
第4表
実施例2
第2図に示すバイアススパッタリング装置〔(休)徳田
製作P9I製マグ坏トロン型スパッタIJ 7グ装置(
商品名「0FS−8ESJ) 〕を用い、またターケ゛
ソトとしては高純度カーボン(日立化成(休)商品名[
カーボンHOB−18J)を用い、第5表に示す条件下
でスパッタリングを竹ない、メッキディスクA上に炭化
氷菓保護膜を800!厚に形成した。Table 4 Example 2 Bias sputtering apparatus shown in Fig. 2 [(Closed) Tokuda P9I mag-tron type sputtering IJ7 apparatus (
The product name "0FS-8ESJ" is used, and as a target material, high purity carbon (Hitachi Chemical (closed) product name [
Using carbon HOB-18J) and sputtering under the conditions shown in Table 5, a carbonized ice cream protective film was formed on the plating disk A with a coating thickness of 800%. Formed thickly.
また比較例としてArガス単独でスパッタリングを行な
いメッキディスクA上に800久の炭系膜を得た(実験
414)
以下にその形成条件およびその評価結果ケそれぞれ第5
表及び第6表に示す。As a comparative example, sputtering was performed using Ar gas alone to obtain a carbon-based film of 800 years on plating disk A (Experiment 414).The formation conditions and evaluation results are shown below.
Shown in Table and Table 6.
第5表
(注) RF−・Radio Frequencyの陥
第6表
また、実験/168〜A14と雰囲気ガス、ガス圧力、
スパッタリング電蝕、バイアス電圧は同条件にし、反応
時間だけを長くして厚膜乞作晟し、OH元元方分析行な
った結果をM7表に示す。Table 5 (Note) RF-・Radio Frequency Table 6 Also, experiments/168 to A14, atmospheric gas, gas pressure,
Table M7 shows the results of sputtering electrolytic corrosion and OH original analysis using the same conditions for the same bias voltage and longer reaction time to form a thicker film.
第7表
第6表及び第6表に示す物性者の測定は次のようにして
行なった。The physical properties shown in Tables 6 and 6 of Table 7 were measured as follows.
1)動摩擦係数測定
装置は第6図に示す構造の摺動物性測定装置を用い、ヘ
ッドは2 mmφサファイア球、ヘッド荷重5Iとし、
相対速に5III//secの条件下で動摩擦係数を測
定した。1) The dynamic friction coefficient measuring device used was a sliding property measuring device having the structure shown in Fig. 6, the head was a 2 mmφ sapphire ball, the head load was 5I,
The coefficient of dynamic friction was measured at a relative speed of 5III/sec.
2)摺動回数測定
第6図に示す摺動物性測定装置を用い、ヘッドは2朋φ
サファイア球、ヘッド荷重10Jとし、相対速度10w
″SeCの条件下で保護膜が破壊するまでの回数な摺動
回数とした。2) Measuring the number of sliding movements Using the sliding property measuring device shown in Fig. 6, the head is 2mmφ.
Sapphire ball, head load 10J, relative speed 10W
The number of times of sliding was determined as the number of times until the protective film was destroyed under SeC conditions.
3)ass(コンタクト・スタート・ストップ)テスト
ヘッドはよりyh−5350タイプ、ヘッド荷重9.8
夕とし、回転速度3600 r、p、m、、oN−oF
F30秒サイクルの条件下でヘッドクラッシュが発生す
るまでのサイクル数Y O8Sテスト回数とした。3) ASS (contact start stop) test head is YH-5350 type, head load 9.8
In the evening, rotation speed 3600 r, p, m, oN-oF
The number of cycles until a head crash occurred under the F30 second cycle condition was taken as the number of YO8S tests.
図面は本発明の実施例を示すものであって、第1図はイ
オン化プラズ′マ分解、!!会装置の説明図、第2図は
バイアススパッタリング装置の説明図、第6図は盾動物
性両足装置の説明図である。
何カ
1:磁気ディスク
2:電極
3:電極
4:反応容器
5:反応容器台
6:ガス供給口
ア:排気管
8二磁気デイスク
9:ディスクホルダー
10:カーボンターゲット
11:ターグントホルダー
12:バイアス電源
13ニスバツタリング電源
14:反応容器
15:ガス供給口
16:排気官
17:磁気ディスク
18:ホルダー
19:サファイア球
20:板バネ
21:歪ケ゛−ジ
22:XYステージ
23:ディヌク回転用モーター
24:架台
特許出願人 電気化学工業株式会社The drawings show an embodiment of the present invention, and FIG. 1 shows ionized plasma decomposition,! ! FIG. 2 is an explanatory diagram of the bias sputtering device, and FIG. 6 is an explanatory diagram of the shield animal two-legged device. Number 1: Magnetic disk 2: Electrode 3: Electrode 4: Reaction vessel 5: Reaction vessel stand 6: Gas supply port A: Exhaust pipe 8 2 Magnetic disk 9: Disk holder 10: Carbon target 11: Target holder 12: Bias Power supply 13 Varnish buttering power supply 14: Reaction vessel 15: Gas supply port 16: Exhaust pipe 17: Magnetic disk 18: Holder 19: Sapphire bulb 20: Leaf spring 21: Strain cage 22: XY stage 23: Dinuk rotation motor 24: Frame patent applicant Denki Kagaku Kogyo Co., Ltd.
Claims (1)
面に炭素/水素の割合がモル比で50150から98/
2の範囲である架橋した炭化水素X保護族を形成させて
なる磁気記憶媒体。The molar ratio of carbon/hydrogen on the surface of a magnetic storage medium in which a gi magnetic metal compound is provided on a substrate is from 50,150 to 98/
A magnetic storage medium formed by forming a crosslinked hydrocarbon X-protected group having a range of 2.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP59012562A JP2549361B2 (en) | 1984-01-26 | 1984-01-26 | Magnetic storage media |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP59012562A JP2549361B2 (en) | 1984-01-26 | 1984-01-26 | Magnetic storage media |
Related Child Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP4232064A Division JP2552799B2 (en) | 1992-08-31 | 1992-08-31 | Manufacturing method of magnetic storage medium |
JP23206592A Division JPH0664733B2 (en) | 1992-08-31 | 1992-08-31 | Method of manufacturing magnetic storage medium |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS60157725A true JPS60157725A (en) | 1985-08-19 |
JP2549361B2 JP2549361B2 (en) | 1996-10-30 |
Family
ID=11808781
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP59012562A Expired - Lifetime JP2549361B2 (en) | 1984-01-26 | 1984-01-26 | Magnetic storage media |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP2549361B2 (en) |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61117727A (en) * | 1984-11-13 | 1986-06-05 | Nec Corp | Magnetic storage body and its manufacture |
JPS634068A (en) * | 1986-06-23 | 1988-01-09 | Nec Corp | Diamondlike carbon film |
US4778582A (en) * | 1987-06-02 | 1988-10-18 | International Business Machines Corporation | Process for making a thin film metal alloy magnetic recording disk with a hydrogenated carbon overcoat |
JPS6437711A (en) * | 1987-08-01 | 1989-02-08 | Hitachi Maxell | Magnetic recording medium |
EP0440259A2 (en) * | 1990-02-01 | 1991-08-07 | Komag, Inc. | Method for sputtering a hydrogen-doped carbon protective film on a magnetic disk |
EP0724022A1 (en) * | 1995-01-26 | 1996-07-31 | International Business Machines Corporation | Sputter deposition of hydrogenated amorphous carbon film |
US5830331A (en) * | 1994-09-23 | 1998-11-03 | Seagate Technology, Inc. | Apparatus and method for sputtering carbon |
CN110194371A (en) * | 2018-02-27 | 2019-09-03 | 派亚博股份公司 | Conveyer system |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5778632A (en) * | 1980-10-30 | 1982-05-17 | Sekisui Chem Co Ltd | Manufacture of magnetic recording medium |
JPS57135443A (en) * | 1981-02-16 | 1982-08-21 | Fuji Photo Film Co Ltd | Manufacture of magnetic recording medium |
JPS57145979A (en) * | 1981-03-04 | 1982-09-09 | Matsushita Electric Ind Co Ltd | Formation of protective film |
US4382100A (en) * | 1976-08-13 | 1983-05-03 | National Research Development Corporation | Application of a layer of carbonaceous material to a surface |
JPS59154641A (en) * | 1983-02-23 | 1984-09-03 | Fuji Photo Film Co Ltd | Magnetic recording medium |
JPS6069826A (en) * | 1983-09-26 | 1985-04-20 | Fuji Photo Film Co Ltd | Magnetic recording medium |
-
1984
- 1984-01-26 JP JP59012562A patent/JP2549361B2/en not_active Expired - Lifetime
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4382100A (en) * | 1976-08-13 | 1983-05-03 | National Research Development Corporation | Application of a layer of carbonaceous material to a surface |
JPS5778632A (en) * | 1980-10-30 | 1982-05-17 | Sekisui Chem Co Ltd | Manufacture of magnetic recording medium |
JPS57135443A (en) * | 1981-02-16 | 1982-08-21 | Fuji Photo Film Co Ltd | Manufacture of magnetic recording medium |
JPS57145979A (en) * | 1981-03-04 | 1982-09-09 | Matsushita Electric Ind Co Ltd | Formation of protective film |
JPS59154641A (en) * | 1983-02-23 | 1984-09-03 | Fuji Photo Film Co Ltd | Magnetic recording medium |
JPS6069826A (en) * | 1983-09-26 | 1985-04-20 | Fuji Photo Film Co Ltd | Magnetic recording medium |
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61117727A (en) * | 1984-11-13 | 1986-06-05 | Nec Corp | Magnetic storage body and its manufacture |
JPS634068A (en) * | 1986-06-23 | 1988-01-09 | Nec Corp | Diamondlike carbon film |
JPH0558068B2 (en) * | 1986-06-23 | 1993-08-25 | Nippon Electric Co | |
US4778582A (en) * | 1987-06-02 | 1988-10-18 | International Business Machines Corporation | Process for making a thin film metal alloy magnetic recording disk with a hydrogenated carbon overcoat |
JPS6437711A (en) * | 1987-08-01 | 1989-02-08 | Hitachi Maxell | Magnetic recording medium |
EP0440259A2 (en) * | 1990-02-01 | 1991-08-07 | Komag, Inc. | Method for sputtering a hydrogen-doped carbon protective film on a magnetic disk |
US5397644A (en) * | 1990-02-01 | 1995-03-14 | Komag, Incorporated | Magnetic disk having a sputtered hydrogen-doped carbon protective film |
US5830331A (en) * | 1994-09-23 | 1998-11-03 | Seagate Technology, Inc. | Apparatus and method for sputtering carbon |
EP0724022A1 (en) * | 1995-01-26 | 1996-07-31 | International Business Machines Corporation | Sputter deposition of hydrogenated amorphous carbon film |
CN110194371A (en) * | 2018-02-27 | 2019-09-03 | 派亚博股份公司 | Conveyer system |
Also Published As
Publication number | Publication date |
---|---|
JP2549361B2 (en) | 1996-10-30 |
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