JPS60155594A - Method for pulling up single crystal and apparatus therefor - Google Patents

Abstract

PURPOSE:To control freely the temperature distribution in a furnace and manufacture efficiently a semiconductor single crystal of high quality, by using a heating means consisting of a combination of a pair of the upper and lower heating elements, capable of respective independent voltage application in variable mutual positions. CONSTITUTION:Basic elements (A) in the form, consisting of three sides a square, and having a curved surface to be a cylindrical shape on joining are mutually joined at the ends to form the upper heating element 47 consisting of a zigzag cylinder wholly. The protruding part of the lower heating element 48 constituted of similarly to the upper heating element 47 is engaged with the recessed part of the upper heating element 47 with a distance (a) therebetween to form a heating means [basic elements in the form of two sides of a triangle or half circumference of a semicircle may be used as the basic heating elements (A)]. A semiconductor single crystal melt in a crucible is heated with the above-mentioned heating means to manufacture a single crystal by the Czochralski method. In the process, supply power to the upper and the lower heating elements (A) and mutual distance therebetween are adjusted to control the temperature distribution in the crucible.

Description

Detailed Description of the Invention The present invention relates to a single crystal pulling method and apparatus for pulling and growing a single crystal from a melt of a crystal material using a resistance heating method, and particularly improves the shape and arrangement of the resistance heating body used therein. The present invention relates to a method and apparatus for freely controlling the temperature distribution inside a pulling equipment furnace.

Conventionally, when pulling single crystals such as semiconductors, a crucible for melting the crystal is installed in a hot zone created by a resistance heating element shaped as shown in Figures 1 and 2 in the furnace of the pulling equipment. Put the crystal material inside and dissolve it,
After contacting the seed crystal, the single crystal was pulled up.

Therefore, in order to obtain the desired high-quality single crystal, it is important to control the temperature distribution inside the pulling furnace, especially the temperature distribution in the hot zone near the crucible and the grown single crystal. With a resistance heating element shaped like the one shown in the figure, only a constant temperature distribution could be obtained, and it was difficult to control the temperature distribution in the hot zone in the pulling furnace as desired.

The present invention was made in response to these problems, and by improving the shape and arrangement of the resistance heating element, it is possible to freely control the temperature distribution in the pulling furnace, especially in the vicinity of the crucible and the grown single crystal. The present invention provides a novel method for pulling a single crystal and an apparatus therefor.

That is, in the present invention, when pulling and growing a single crystal such as a semiconductor from a melt of a crystal material using a resistance heating method, three sides of a quadrilateral, two sides of a triangle, and a circle are placed concentrically around the outer periphery of a crucible containing the melt. A plurality of heating bodies each formed into a zigzag cylindrical shape by sequentially interconnecting the ends of basic elements each having a curved surface and a shape consisting of one of the semi-circumferences of By sequentially arranging the heating element in the vertical direction of the furnace so that the convex part of the zigzag part of the lower heating element overlaps with the concave part of the zigzag part of the heating element, and by inputting a prescribed electric power to each heating element. This invention relates to a method for pulling a single crystal in which pulling is carried out while maintaining a predetermined temperature distribution in the vicinity of the crucible and the grown single crystal, and to the apparatus for carrying out the method.

The present invention will be explained below based on the drawings.

FIG. 3 is a main sectional view of an example of a single crystal pulling apparatus embodying the present invention, in which a crystal melting crucible 31 is assembled into a carbon susceptor 30 and set at a predetermined position by the upper and lower ends of a lower shaft 32. A melt 33 of crystalline material is placed in the crucible 31, and a single crystal 36 is pulled up and grown by rotating the shaft 35 while looking through the viewing window 34. On the outer periphery of the crucible 31, a cylindrical upper carbon resistance heating element 37 and a lower carbon resistance heating element 38 are placed concentrically in the vertical direction of the furnace, with a predetermined spacing between them for polymerization without contact. A cylindrical heat insulating material 39 is installed on the outside thereof. 40 is N2 gas or Ar
The chamber 41 is filled with an inert gas such as gas. When pulling a single crystal, the temperature distribution inside the furnace, especially the crucible 3
1 and the temperature distribution in the hot zone near the grown single crystal 36 is maintained at a desired level by controlling the positional relationship between the upper heating element 31 and the lower heating element 38 and the amount of heat generated therefrom. . An electrode plate is attached to the bottom of each of the upper heating element 37 and the lower heating element 38, and by adjusting these electrode plates, the heating elements 37 and 38 are moved in the vertical direction, and the relative position of the heating elements 37 and 38 is adjusted. By freely controlling the relative positions of these heating bodies 37, 38 and the crucible, and by independently controlling the input to these heating bodies 37, 38, the hot zone can be maintained at an optimal temperature distribution.

The examples shown in FIGS. 4 and 5 are partially enlarged perspective views of the heating body, and the one shown in FIG. A lower heating element 48 formed from similar basic elements A is placed in a concave portion of an upper heating element 47 formed into a cylindrical shape with a zigzag shape as a whole by interconnecting basic elements A at their ends one after another. The convex portions of the heating elements are overlapped with each other so as not to contact each other with a distance a between them to form a set of heating elements.

The upper heating body 5 shown in FIG. 5 is formed from a basic element B having a triangular shape with two sides each having a curved surface.
Lower heating body 5 formed from basic element B similar to 1.
8 are polymerized while maintaining intervals to form a navy blue heating element.

These are used as heating bodies as shown in Fig. 3 above, but they are not limited to the two upper and lower stages illustrated, but more stages may be used in combination as necessary to determine their relative positions and heat output. By controlling the above, it is possible to freely control the temperature distribution in the vicinity of the crucible and the grown single crystal, and according to the present invention, for example, high quality semiconductor single crystals can be grown advantageously. Can be done.

[Brief explanation of drawings]

FIGS. 1 and 2 are cross-sectional views of an example of a conventional resistance heating body. FIG. 3 is a main sectional view of a single crystal pulling apparatus embodying the present invention, and FIGS. 4 and 5 are partially enlarged perspective views of a combination of resistance heating elements used in the present invention. 10.20 ...... Resistance heating element 30 ・
・・・・・・・・・・・・・・・ Carbon susceptor 3
1 ・・・・・・・・・・・・ Crucible 33 ・
・・・・・・・・・・・・・・・ Melt 36 ・・・・
;・・・・・・・・・ Single crystal 37.47.57 ・
... Upper resistance heating element 38.48.58 ... Lower resistance heating element 39 ... Insulation material Figure 1 Figure 3 Figure 2 Figure 4 Figure 5 figure

Claims (3)

[Claims] (1) When pulling and growing a single crystal from a melt of a crystal material using a resistance heating method, three sides of a quadrilateral, two sides of a triangle, and a semicircle around the circumference of a circle are placed concentrically around the outer periphery of the crucible containing the melt. A plurality of heating bodies each formed into a zigzag cylindrical shape by sequentially interconnecting the ends of basic elements each having a curved surface in the shape of one of By sequentially arranging the convex parts of the zigzag part of the lower heating element in the recessed part in the vertical direction of the furnace so that they polymerize while maintaining a predetermined interval, and by inputting a predetermined electric power to each heating element, the crucible and the growth are performed. 1. A method for pulling a single crystal, characterized in that pulling is carried out while maintaining the temperature near the single crystal in a predetermined distribution. (2) Claims in which the single crystal is a semiconductor single crystal (
1) Single crystal pulling method described in section 1). (3) In an apparatus that uses a resistance heating method to pull and grow a single crystal from a melt of a crystal material, three sides of a quadrilateral, two sides of a triangle, and a semicircle of a circle are placed concentrically around the outer periphery of a crucible containing the melt. By adjusting the electrode portions of a plurality of heating bodies formed in a zigzag cylindrical shape by sequentially interconnecting the ends of a basic element having a curved surface in the shape of any one of the circumferences, The convex parts of the zigzag part of the lower heating element are arranged in order in the vertical direction of the furnace so that the convex part of the zigzag part of the upper heating element overlaps with the concave part of the zigzag part of the upper heating element, and the desired electric power is applied to each heating element. A method for pulling a single crystal characterized in that the temperature distribution in the vicinity of the crucible and the grown single crystal can be freely controlled by independently inputting and controlling the arrangement relationship and calorific value of each heating element. Device.