JPS60137074A - Light control semiconductor device - Google Patents
Light control semiconductor deviceInfo
- Publication number
- JPS60137074A JPS60137074A JP58250529A JP25052983A JPS60137074A JP S60137074 A JPS60137074 A JP S60137074A JP 58250529 A JP58250529 A JP 58250529A JP 25052983 A JP25052983 A JP 25052983A JP S60137074 A JPS60137074 A JP S60137074A
- Authority
- JP
- Japan
- Prior art keywords
- light
- pellet
- window material
- semiconductor device
- reflecting film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 24
- 239000008188 pellet Substances 0.000 claims abstract description 20
- 239000000463 material Substances 0.000 claims abstract description 18
- 239000011347 resin Substances 0.000 claims abstract description 15
- 229920005989 resin Polymers 0.000 claims abstract description 15
- 229910052782 aluminium Inorganic materials 0.000 claims abstract 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract 2
- 229910052751 metal Inorganic materials 0.000 abstract description 8
- 239000002184 metal Substances 0.000 abstract description 8
- 230000005540 biological transmission Effects 0.000 abstract description 4
- 238000007789 sealing Methods 0.000 abstract description 2
- 239000000919 ceramic Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0232—Optical elements or arrangements associated with the device
- H01L31/02327—Optical elements or arrangements associated with the device the optical elements being integrated or being directly associated to the device, e.g. back reflectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Light Receiving Elements (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は、光透過窓を有する樹脂封止形半導体装置に関
する。DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a resin-sealed semiconductor device having a light-transmitting window.
従来例の構成とその問題点
近年、光消去可能な半導体記憶装置が、パッケージのコ
ストダウンをねらったレジンモールド形で製品化されて
いる。同装置は第１図に示すように半導体ペレット１を
金属のタグ２上に固定し、ペレット１上の電極と外部リ
ード３の端部とをワイヤー４で接続し、光透過性の窓月
５の底面を。2. Description of the Related Art Conventional Structures and Problems In recent years, photo-erasable semiconductor memory devices have been commercialized in resin molded form with the aim of reducing packaging costs. As shown in FIG. 1, this device fixes a semiconductor pellet 1 on a metal tag 2, connects the electrode on the pellet 1 and the end of an external lead 3 with a wire 4, and connects a transparent window 5 with a wire 4. the bottom of.
ペレット１の表面に向けて、光透過性の樹脂６で固定し
、窓月６の上面を露出させた状態で、モールドレジン７
によって外囲封止した構造になっている。かかる構造の
装置においては、セラミックでパッケージされた装置と
比較して、窓材６の受光面が小さく、しかも、光を透過
すべき窓材の厚みが大きく、また光透過性とはいえ、光
透過損失を伴なう樹脂か介在しているため、外部から照
射される到達光計が制限される。さらに、斜めに入射し
た光は窓月５の１１４１１而にあたるが、窓拐６か、そ
の側面で不透明なモールドレジン７と接しており、光を
ほとんど反射せず、ペレット１０表面に到達しない。こ
れらのことからこの従来例半導体記憶装置は記憶情報の
消去に長時間を要するという問題があった。The mold resin 7 is fixed to the surface of the pellet 1 with a light-transmitting resin 6, and the upper surface of the window 6 is exposed.
It has a sealed structure. In a device with such a structure, compared to a device packaged with ceramic, the light-receiving surface of the window material 6 is small, and the thickness of the window material that should transmit light is large. Since there is a resin involved that causes transmission loss, the amount of light that can be irradiated from the outside is limited. Further, although the obliquely incident light hits the 11411 part of the window plate 5, it comes into contact with the window plate 6 or the opaque mold resin 7 on its side, so that almost no light is reflected and does not reach the surface of the pellet 10. For these reasons, this conventional semiconductor memory device has a problem in that it takes a long time to erase stored information.
発明の目的
本発明の目的は、外部から照射される光の到達光用を増
大させることが可能な光制御半導体装置を提供するもの
である。OBJECTS OF THE INVENTION An object of the present invention is to provide a light control semiconductor device that can increase the amount of light that reaches the device from the outside.
発明の構成
本発明は、側面に光反射膜を有する透光性樹脂窓拐の底
面を、半導体ペレット内に密着固定し、同窓制の上面を
露出させて外囲樹脂相で封止した構造であり、これによ
り、外部から照射される入射光が効率よく半導体ペレッ
ト表面に達し、たとえば、半導体ペレット内の記憶回路
要素を光照射によって、短時間で消去を行なうことがで
きる。Structure of the Invention The present invention has a structure in which the bottom surface of a transparent resin window having a light-reflecting film on the side surface is closely fixed inside a semiconductor pellet, and the top surface of the window is exposed and sealed with a surrounding resin layer. As a result, incident light irradiated from the outside efficiently reaches the surface of the semiconductor pellet, and, for example, the memory circuit elements within the semiconductor pellet can be erased in a short time by light irradiation.
実施例の説明
第２図を参照して本発明の実施例装置を説明する。半導
体ペレット１が金属のタブ２に固定され、ペレット１の
電極はワイヤー４によってリード３と接続され、ペレッ
ト１上に光透過性の樹脂６を介して光透過性の窓材５を
設けた構造は従来装置と同じであるが、窓材５の側面に
は、光反射膜とし゛て、Ａｔなどの金属膜８を被着させ
ている。金属膜８の被着は窓材５をペレット１上につけ
るまえに、蒸着法あるいはスパッタ法で行なえばよい。DESCRIPTION OF THE EMBODIMENTS A device according to an embodiment of the present invention will be described with reference to FIG. A structure in which a semiconductor pellet 1 is fixed to a metal tab 2, an electrode of the pellet 1 is connected to a lead 3 by a wire 4, and a light-transparent window material 5 is provided on the pellet 1 via a light-transparent resin 6. is the same as the conventional device, but a metal film 8 such as At is deposited on the side surface of the window material 5 as a light reflecting film. The metal film 8 may be deposited by vapor deposition or sputtering before the window material 5 is attached to the pellet 1.
なお窓材５の金属膜８被着面は極力平滑にしておく。窓
材５を設けた後の外囲封止樹脂７によるモールド工程は
従来のとおりでよい。Note that the surface of the window material 5 to which the metal film 8 is adhered is made as smooth as possible. The molding process using the outer sealing resin 7 after providing the window material 5 may be performed as conventionally.
発明の効果
本発明の光透過窓を有する樹脂封止形光制御半導体装置
は、入射光の透過する窓材の側面に反射膜が被着され内
部に向かって鏡面となっているため、斜めに入射する光
も２反射面で反射されてペレット表面に達する。この結
果、外部から照射された入射光を効率よく利用すること
ができ、たとえば、光消去可能な半導体記憶装置では、
短時間での消去が可能となる。Effects of the Invention In the resin-sealed light control semiconductor device having a light transmitting window according to the present invention, a reflective film is coated on the side surface of the window material through which incident light passes, and the mirror surface is formed toward the inside. The incident light is also reflected by the two reflecting surfaces and reaches the pellet surface. As a result, incident light irradiated from the outside can be efficiently used. For example, in a photo-erasable semiconductor memory device,
Erasing can be done in a short time.
第１図は従来の光制御半導体装置の４ｉ面図、第２図は
本発明実施例の光制御半導体装置の断面図である。
１・・・・・・半導体ペレット、２・・・・タブ、３・
・・・・リード、４・・・・・ワイヤー、５・・・・・
・窓材、６・・・・・光透過性樹脂、７・・・・・・モ
ールドレジン、８・・・・・・金属膜。FIG. 1 is a 4i plane view of a conventional optically controlled semiconductor device, and FIG. 2 is a sectional view of an optically controlled semiconductor device according to an embodiment of the present invention. 1... Semiconductor pellet, 2... Tab, 3...
...Lead, 4...Wire, 5...
- Window material, 6... Light-transmitting resin, 7... Molded resin, 8... Metal film.
Claims (3)
、半導体ペレット面に密着固定し、同窓材の上面を露出
させて外囲樹脂材で封止した光制御半導体装置。(1) A light control semiconductor device in which the bottom surface of a transparent resin window material having a light reflecting film on its side surface is closely fixed to the surface of a semiconductor pellet, and the top surface of the window material is exposed and sealed with a surrounding resin material.
範囲第１項に記載の光制御半導体装置。(2) The light control semiconductor device according to claim 1, wherein the light reflecting film is an aluminum vapor-deposited film.
要素を有する特許請求の範囲第１項に記載の光制御半導
体装置。(3) The optically controlled semiconductor device according to claim 1, wherein the semiconductor pellet has a storage circuit element controlled by light inside.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58250529A JPS60137074A (en) | 1983-12-26 | 1983-12-26 | Light control semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58250529A JPS60137074A (en) | 1983-12-26 | 1983-12-26 | Light control semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS60137074A true JPS60137074A (en) | 1985-07-20 |
Family
ID=17209246
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58250529A Pending JPS60137074A (en) | 1983-12-26 | 1983-12-26 | Light control semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60137074A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0251618A2 (en) * | 1986-06-23 | 1988-01-07 | Xerox Corporation | Optical mouse |
-
1983
- 1983-12-26 JP JP58250529A patent/JPS60137074A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0251618A2 (en) * | 1986-06-23 | 1988-01-07 | Xerox Corporation | Optical mouse |
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