JPS60136345A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS60136345A
JPS60136345A JP58244055A JP24405583A JPS60136345A JP S60136345 A JPS60136345 A JP S60136345A JP 58244055 A JP58244055 A JP 58244055A JP 24405583 A JP24405583 A JP 24405583A JP S60136345 A JPS60136345 A JP S60136345A
Authority
JP
Japan
Prior art keywords
pellet
semiconductor device
dam
substrate
cavity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP58244055A
Other languages
Japanese (ja)
Inventor
Ken Okuya
謙 奥谷
Kanji Otsuka
寛治 大塚
Masayuki Shirai
優之 白井
Masaya Ishii
雅也 石井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Renesas Semiconductor Package and Test Solutions Co Ltd
Original Assignee
Hitachi Hokkai Semiconductor Ltd
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Hokkai Semiconductor Ltd, Hitachi Ltd filed Critical Hitachi Hokkai Semiconductor Ltd
Priority to JP58244055A priority Critical patent/JPS60136345A/en
Publication of JPS60136345A publication Critical patent/JPS60136345A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/02—Containers; Seals
    • H01L23/10—Containers; Seals characterised by the material or arrangement of seals between parts, e.g. between cap and base of the container or between leads and walls of the container
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/153—Connection portion
    • H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
    • H01L2924/15312—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a pin array, e.g. PGA
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161—Cap
    • H01L2924/1615—Shape
    • H01L2924/16195—Flat cap [not enclosing an internal cavity]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Lead Frames For Integrated Circuits (AREA)

Abstract

PURPOSE:To prevent generation of cracks on a pellet or exfoliation of the adhered part of a package as well as to improve the reliability of the titled semiconductor device by a method wherein the adhesion between the substrate part, the dam part and the cap part of the package and the adhesion of the pellet to the pellet mounting part of the substrate part are performed using the adhesive agent having rubber-like elasticity. CONSTITUTION:A cavity 5 is formed by a glass epoxy resin substrate part 3, whereon pins 2 which are the external electrode are provided contacting to a metallized layer 1, and a glass epoxy resin dam part 4 which is provided on the circumferential part of the substrate 3. A pellet 6 is attached to the center part of said cavity 5, and the cavity 5 is sealed by a cap part 8 consisting of glass epoxy resin. The substrate part 3 and the dam part 4 are bonded using silicon rubber 9a, the upper part of the dam part 4 and a cap part are bonded using silicon rubber 9b, and the pellet mounting part located at the center part of the cavity, and the pellet 6 are bonded by silicon rubber 9c.

Description

【発明の詳細な説明】 ［技術分野］ 本発明は、半導体装置の製造技術、特に信頼性の高い半
導体装置を製造する技術に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Technical Field] The present invention relates to a technology for manufacturing semiconductor devices, and particularly to a technology for manufacturing highly reliable semiconductor devices.

［背景技術］ 高集積度のペレットを搭載することができる半導体装置
として、いわゆるピングリッドアレイ型（またはプラグ
イン型）半導体装置が知られている。[Background Art] A so-called pin grid array type (or plug-in type) semiconductor device is known as a semiconductor device capable of mounting highly integrated pellets.

前記半導体装置は、そのパッケージが通常セラミックで
形成されているためコストが高いという問題がある。The semiconductor device has a problem in that its package is usually made of ceramic and is therefore expensive.

そこで、パッケージ材料として安価なプラスチックを利
用することで前記問題の解決を図ることが知られている
（雑誌「電子技術Ｊ　１９８１年８月号２４Ｐなど）。Therefore, it is known that the above-mentioned problem can be solved by using inexpensive plastic as a packaging material (e.g., magazine "Electronic Technology J, August 1981 issue, page 24)."

ところが、一般にプラスチックは外力により容易に変形
するという性質を有しているため、特に薄型の半導体装
置のパンケージを弾性のないエポキシ系等の接着剤で形
成したり、またはペレットを取り付けたりした場合は、
信頼性の上で重大な問題が生じるということが本発明者
によって見い出された。However, plastics generally have the property of being easily deformed by external forces, so if the pancage of a thin semiconductor device is made of a non-elastic adhesive such as epoxy, or if pellets are attached, ,
It has been discovered by the inventor that a serious reliability problem arises.

［発明の目的］ 本発明の目的は、少なくともパッケージの基板部がプラ
スチックで形成されてなる半導体装置について、その信
頼性を向上する技術を提供することにある。[Object of the Invention] An object of the present invention is to provide a technique for improving the reliability of a semiconductor device in which at least the substrate portion of the package is made of plastic.

本発明の前記ならびにその他の目的と新規な特徴は、本
明細書の記述および添付図面から明らかになるであろう
。The above and other objects and novel features of the present invention will become apparent from the description of this specification and the accompanying drawings.

［発明の概要］ 本願において開示される発明のうち代表的なものの概要
を簡単に説明すれば、次の通りである。[Summary of the Invention] A brief overview of typical inventions disclosed in this application is as follows.

すなわら、パッケージの基板部、ダム部およびキャップ
部相互間の接着と該基板部のペレット取付部へのペレッ
トの接着とを、ゴム状弾性を有する接着剤を用いて行う
ことにより、外力を受けてパッケージが変形しても変形
による応力を接着剤に吸収せしめることにより、ペレッ
トの割れまたはパンケージの接着部の剥がれ等を効果的
に防止し、該半導体装置の信頼性向上を達成するもので
ある。In other words, by using an adhesive with rubber-like elasticity to bond the substrate, dam, and cap of the package, and to bond the pellet to the pellet mounting portion of the substrate, external forces can be reduced. Even if the package is deformed due to the deformation, the stress caused by the deformation is absorbed by the adhesive, thereby effectively preventing cracking of the pellet or peeling of the adhesive part of the pancage, thereby improving the reliability of the semiconductor device. be.

［実施例］ 図は、本発明による一実施例を示すピングリッドアレイ
型半導体装置を、そのほぼ中央部における断面図で示し
たものである。[Embodiment] The figure is a cross-sectional view of a pin grid array type semiconductor device showing an embodiment of the present invention, taken approximately at the center thereof.

本実施例の半導体装置は、銅等のメタライズ層１が載設
され、該メタライズ層１と接触する状態で外部電極であ
るビン２が植設されているガラスエポキシ樹脂製の基板
部３と、該基板部３の周辺部に形成された同じくガラス
エポキシ樹脂製のダム部４とからキャビティ５が形成さ
れてなるものである。このキャビティ５の中央部にはペ
レット６が取り付けられており、さらに該ペレットのポ
ンディングパソドとメタライズ層ｌとをワイヤ７で電気
的に接続した状態で、該キャビティ５はガラスエポキシ
樹脂からなるキャップ部８で封止されてなるものである
。The semiconductor device of this embodiment includes a substrate portion 3 made of glass epoxy resin, on which a metallized layer 1 of copper or the like is mounted, and a via 2 serving as an external electrode is implanted in contact with the metallized layer 1; A cavity 5 is formed from a dam part 4 also made of glass epoxy resin formed around the periphery of the substrate part 3. A pellet 6 is attached to the center of the cavity 5, and the bonding path of the pellet and the metallized layer 1 are electrically connected by a wire 7, and the cavity 5 is made of glass epoxy resin. It is sealed with a cap part 8.

そして、本実施例による半導体装置は基板部３とダム部
４とを９ａ、該ダム部４の上部とキャンプ部とを９ｂの
各シリコーンゴムで、さらにキャビティ中央部のペレッ
ト取付部（図示せず）とペレット６とを９０のシリコー
ンゴムで接着して形成される。In the semiconductor device according to this embodiment, the substrate part 3 and the dam part 4 are made of silicone rubber 9a, the upper part of the dam part 4 and the camping part are made of silicone rubber 9b, and the pellet attachment part (not shown) in the center of the cavity is made of silicone rubber. ) and the pellet 6 are bonded together with 90% silicone rubber.

なお、本実施例ではキャビテイ５内部のペレット６やメ
タライズ層１の配線等への水分等の有害物質による影響
を避けるために、ペレット６等をシリコーンゲル１０で
埋設しである。In this embodiment, the pellets 6 and the like are buried in silicone gel 10 in order to avoid the influence of harmful substances such as moisture on the pellets 6 inside the cavity 5 and the wiring of the metallized layer 1.

以上説明したように、本実施例の半導体装置は、そのパ
ッケージが外力により変形し易いプラスチックであるガ
ラスエポキシ樹脂で形成されているが、パッケージの各
部分の接着をゴム状弾性を有する接着剤であるシリコー
ンゴム９ａ、９ｂで行っているため、外力または温度変
化による変形が加わっても、その変形による応力を十分
に該接着剤が吸収してくれるので、パッケージの接着部
の剥がれ等を有効に防止でき、さらにペレット６をも同
様にシリコーンゴム９Ｃで取り付けているので、パンケ
ージに変形が生じてもペレットの割れや剥がれの発生を
防止できるものである。As explained above, the package of the semiconductor device of this example is made of glass epoxy resin, which is a plastic that easily deforms due to external force, but each part of the package is bonded with an adhesive having rubber-like elasticity. Because it is made of silicone rubber 9a and 9b, even if deformation is applied due to external force or temperature change, the adhesive sufficiently absorbs the stress caused by the deformation, effectively preventing peeling of the adhesive part of the package. Furthermore, since the pellets 6 are similarly attached with silicone rubber 9C, even if the pan cage is deformed, cracking or peeling of the pellets can be prevented.

なお、前記半導体装置は、（１１ガラスエポキシ樹脂基
板上に所定形状のメタライズ層１を印刷方法等で、たと
えば銅で形成し、（２）該メタライズ層１と接触するよ
うにピン２を前記基板に垂直下方に植設して基板部３と
し、（３）該基板部３の周辺部にダム部４をシリコーン
ゴム９ａで接着してキャビティ５を形成せしめ、（４）
該キャビティ中央部にペレット６をシリコーンゴム９ｃ
で取り付けた後、（５）該ペレット６とメタライズ１と
をワイヤ７でボンディングし、ついで（６ンシリコーン
ゲル１Ｏでペレット６等のコートを行い、（７）最後に
キャンプ部８をダム部４の上面とシリコーンゴム９ｂを
介して接着することにより製造される。シリコーンゴム
による接着は、シリコーン生ゴムを接着部に被着した後
キユアリングするだけで容易に達成できる。The semiconductor device is manufactured by (11) forming a metallized layer 1 of a predetermined shape on a glass epoxy resin substrate using a printing method or the like, using copper, for example; (3) the dam part 4 is bonded to the peripheral part of the substrate part 3 with silicone rubber 9a to form a cavity 5; (4)
Pellets 6 are placed in the center of the cavity using silicone rubber 9c.
(5) The pellet 6 and the metallization 1 are bonded with the wire 7, and then the pellet 6 is coated with 100% silicone gel.(7) Finally, the camp part 8 is attached to the dam part 4. The adhesive is manufactured by adhering to the upper surface of the adhesive via silicone rubber 9b. Adhesion using silicone rubber can be easily achieved by simply applying silicone raw rubber to the adhesive portion and then curing.

［効果コ （ｌ）、ピングリントアレイ型パッケージからなる半導
体装置において、パッケージの基板部、ダム部およびキ
ャンプ部の間の接着とペレットの取付とをゴム状弾性を
有する接着剤で行うことにより、パンケージに外力また
は温度変化等により変形が生じても該接着剤が変形に伴
う応力を吸収してくれるので、パッケージ破壊およびペ
レット破壊または剥離等を有効に防止することができる
。[Effect (l): In a semiconductor device consisting of a pin print array type package, by bonding between the substrate part, dam part, and camp part of the package and attaching the pellet with an adhesive having rubber-like elasticity, Even if the pan cage is deformed due to external force or temperature change, the adhesive absorbs the stress caused by the deformation, so package breakage, pellet breakage, peeling, etc. can be effectively prevented.

＋２）、　ｔｌ）により、半導体装置の信頼性を向上さ
せることができる。+2), tl), the reliability of the semiconductor device can be improved.

（３１，＋１１によりペレットの基板からの剥離が防止
できるので、透水性を持つシリコーンゲルを通った水分
が剥離部で水膜をつくることを防止できる。(31, +11 prevents the pellet from being peeled off from the substrate, so water that has passed through the water-permeable silicone gel can be prevented from forming a water film at the peeled part.

ゲル内の水分は半導体装置の腐食の原因とならないが、
水膜は腐食の原因となるので、半導体装置の信頼性を向
上できる。Moisture in the gel does not cause corrosion of semiconductor devices, but
Since the water film causes corrosion, the reliability of the semiconductor device can be improved.

＋４１．　＋３１によりペレットの封止を主としてシリ
コーンゲルで行い、キャンプにより機械的外力からペレ
ット等を保護するパッケージ構造にでき、安価゛な封止
を実現できる。+41. With +31, the pellets are sealed mainly with silicone gel, and with the camp, a package structure can be created in which the pellets and the like are protected from external mechanical forces, making it possible to realize inexpensive sealing.

以上本発明者によってなされた発明を実施例に基づき具
体的に説明したが、本発明は前記実施例に限定されるも
のではなく、その要旨を逸脱しない範囲で種々変更可能
であることはいうまでもない。Although the invention made by the present inventor has been specifically explained above based on Examples, it goes without saying that the present invention is not limited to the Examples and can be modified in various ways without departing from the gist thereof. Nor.

たとえば、接着剤としてシリコーンゴムについて説明し
たが、他の同様の機能を有するシリコーン以外のゴムや
エラストマーであってもよいことはいうまでもない。For example, although silicone rubber has been described as the adhesive, it goes without saying that other rubbers or elastomers other than silicone having similar functions may also be used.

また、パッケージ全体をガラスエポキシ樹脂で形成した
ものについて説明したが、これに限るものでなく、たと
えばポリイミド等の他のプラスチックであってもよく、
更には、ダム部またはキャップ部は他の材料、たとえば
セラミックまたはアルミニウム等の金属で形成してもよ
い。この場合、接着剤がゴム状弾性を有しているが故に
ダム部とキャップ部は、プラスチック、セラミックまた
は金属を任意に組合せたものであっても形成することが
可能である。Furthermore, although the entire package has been described as being made of glass epoxy resin, it is not limited to this, and may be made of other plastics such as polyimide.
Additionally, the dam or cap portion may be formed from other materials, such as ceramic or metals such as aluminum. In this case, since the adhesive has rubber-like elasticity, the dam part and the cap part can be made of any combination of plastic, ceramic, or metal.

【図面の簡単な説明】[Brief explanation of the drawing]

図は、本発明による一実施例である半導体装置を示す断
面図である。 １・・・メタライズ層、２・・・ピン、３・・・基板部
、４・・・ダム部、５・・・キャビティ、６・・・ペレ
ット、７・・・ワイヤ、８・・・キ中）ブ９１．９　ａ
、９　ｂ、９　ｃ・・・シリコーンゴム、１０・・・シ
リコーンゲル。 第１頁の続き ＠発明者石井　雅也 北海道亀田郡七飯町字中島１４幡地　日立北海セミコン
ダクタ株式会社内The figure is a cross-sectional view showing a semiconductor device that is an embodiment of the present invention. DESCRIPTION OF SYMBOLS 1... Metallized layer, 2... Pin, 3... Substrate part, 4... Dam part, 5... Cavity, 6... Pellet, 7... Wire, 8... Key Middle) Bu 91.9 a
, 9 b, 9 c... silicone rubber, 10... silicone gel. Continuation of page 1 @ Inventor Masaya Ishii 14 Hata, Nakajima, Nanae-cho, Kameda-gun, Hokkaido Inside Hitachi Hokkai Semiconductor Co., Ltd.

Claims (1)

【特許請求の範囲】 １、パ、７ケージが基板部、ダム部およびキャンプ部で
形成されてなるビングリッドアレイ型半導体装置の少な
くとも基板部がプラスチックで形成されてなる半導体装
置において、各部間およびペレットとペレット取付部と
がゴム状弾性を有する接着剤で接着されていることを特
徴とする半導体装置。 ２、ダム部またはキャンプ部の少なくとも一方がプラス
チックであることを特徴とする特許請求の範囲第１項記
載の半導体装置。 ３、ダム部またはキャップ部の少なくとも一方がセラミ
ックであることを特徴とする特許請求の範囲第１項記載
の半導体装置。 ４、ダム部またはキャップ部の少なくとも一方が金属で
あることを特徴とする特許請求の範囲第１項記載の半導
体装置。 ５、プラスチックがガラスエポキシ樹脂であることを特
徴とする特許請求の範囲第１項または第２項記載の半導
体装置。 ６、接着剤がシリコーンゴムであることを特徴とする特
許請求の範囲第１項記載の半導体装置。[Scope of Claims] 1. In a bin grid array type semiconductor device in which a cage is formed of a substrate part, a dam part, and a camp part, at least the substrate part is made of plastic. A semiconductor device characterized in that a pellet and a pellet mounting portion are bonded together with an adhesive having rubber-like elasticity. 2. The semiconductor device according to claim 1, wherein at least one of the dam portion and the camp portion is made of plastic. 3. The semiconductor device according to claim 1, wherein at least one of the dam portion and the cap portion is made of ceramic. 4. The semiconductor device according to claim 1, wherein at least one of the dam portion and the cap portion is made of metal. 5. The semiconductor device according to claim 1 or 2, wherein the plastic is glass epoxy resin. 6. The semiconductor device according to claim 1, wherein the adhesive is silicone rubber.
JP58244055A 1983-12-26 1983-12-26 Semiconductor device Pending JPS60136345A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58244055A JPS60136345A (en) 1983-12-26 1983-12-26 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58244055A JPS60136345A (en) 1983-12-26 1983-12-26 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS60136345A true JPS60136345A (en) 1985-07-19

Family

ID=17113054

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58244055A Pending JPS60136345A (en) 1983-12-26 1983-12-26 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS60136345A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5098630A (en) * 1985-03-08 1992-03-24 Olympus Optical Co., Ltd. Method of molding a solid state image pickup device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5098630A (en) * 1985-03-08 1992-03-24 Olympus Optical Co., Ltd. Method of molding a solid state image pickup device

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