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JPS60131973A - Method for vaporizing organometallic compound - Google Patents

Method for vaporizing organometallic compound

Info

Publication number
JPS60131973A
JPS60131973A JP23923883A JP23923883A JPS60131973A JP S60131973 A JPS60131973 A JP S60131973A JP 23923883 A JP23923883 A JP 23923883A JP 23923883 A JP23923883 A JP 23923883A JP S60131973 A JPS60131973 A JP S60131973A
Authority
JP
Japan
Prior art keywords
holes
spouting
organometallic compound
gas
tip
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP23923883A
Other versions
JPH0379436B2 (en
Inventor
Yuzaburo Ban
Nobuyasu Hase
Motoji Morizaki
Mototsugu Ogura
Original Assignee
Matsushita Electric Ind Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Ind Co Ltd filed Critical Matsushita Electric Ind Co Ltd
Priority to JP58239238A priority Critical patent/JPH0379436B2/ja
Publication of JPS60131973A publication Critical patent/JPS60131973A/en
Publication of JPH0379436B2 publication Critical patent/JPH0379436B2/ja
Anticipated expiration legal-status Critical
Application status is Expired - Lifetime legal-status Critical

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/4481Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material
    • C23C16/4482Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material by bubbling of carrier gas through liquid source material
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01JCHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J4/00Feed or outlet devices; Feed or outlet control devices
    • B01J4/001Feed or outlet devices as such, e.g. feeding tubes
    • B01J4/002Nozzle-type elements

Abstract

PURPOSE:To feed a uniformly vaporized organometallic compound to a growing reaction furnace with high controllability by attaching a bubble forming jig having spouting holes to the tip of a gas spouting part to make bubbles fine when an organometallic compound is bubbled. CONSTITUTION:A bubble forming jig 12 having plural gas spouting holes 13 is attached to the tip of the spouting part 4a of a guide 4 for guiding a gas for bubbling to a position under the surface 6 of a liq. The jig 12 is in the form of a trumpet or the like, and it is made to act as a control plate by gradually increasing the diameters of the holes 13 in the radial direction. The density of the holes 13 may be increased. A gas sent from the guide 4 is converted into fine and uniform bubbles 14 by spouting from the holes 13, and a uniformly vaporized organometallic compound can be fed to the outside with high controllability.
JP58239238A 1983-12-19 1983-12-19 Expired - Lifetime JPH0379436B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58239238A JPH0379436B2 (en) 1983-12-19 1983-12-19

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58239238A JPH0379436B2 (en) 1983-12-19 1983-12-19

Publications (2)

Publication Number Publication Date
JPS60131973A true JPS60131973A (en) 1985-07-13
JPH0379436B2 JPH0379436B2 (en) 1991-12-18

Family

ID=17041794

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58239238A Expired - Lifetime JPH0379436B2 (en) 1983-12-19 1983-12-19

Country Status (1)

Country Link
JP (1) JPH0379436B2 (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6283400A (en) * 1985-10-02 1987-04-16 Toyo Sutoufuaa Chem:Kk Method of improving cylinder for vapor growth of organometallic compound
US5476547A (en) * 1989-09-26 1995-12-19 Canon Kabushiki Kaisha Gas feeding device for controlled vaporization of an organometallic compound used in deposition film formation
WO2001042539A1 (en) * 1999-12-11 2001-06-14 Epichem Limited Method and apparatus for delivering precursors to a plurality of epitaxial reactor sites
EP1329540A2 (en) * 2000-07-03 2003-07-23 Epichem Limited An apparatus for the delivery of precursors in the vapour phase to epitaxial reactor sites
WO2007121202A1 (en) * 2006-04-11 2007-10-25 Applied Materials, Inc. Apparatus and methods for chemical vapor deposition
JP2015007286A (en) * 2009-03-11 2015-01-15 レール・リキード−ソシエテ・アノニム・プール・レテュード・エ・レクスプロワタシオン・デ・プロセデ・ジョルジュ・クロード Bubbling supply system for stable precursor supply

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5519146U (en) * 1978-07-21 1980-02-06

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5519146U (en) * 1978-07-21 1980-02-06

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6283400A (en) * 1985-10-02 1987-04-16 Toyo Sutoufuaa Chem:Kk Method of improving cylinder for vapor growth of organometallic compound
US5476547A (en) * 1989-09-26 1995-12-19 Canon Kabushiki Kaisha Gas feeding device for controlled vaporization of an organometallic compound used in deposition film formation
WO2001042539A1 (en) * 1999-12-11 2001-06-14 Epichem Limited Method and apparatus for delivering precursors to a plurality of epitaxial reactor sites
US6698728B1 (en) 1999-12-11 2004-03-02 Epichem Limited Method and apparatus for delivering precursors to a plurality of epitaxial reactor sites
EP1329540A2 (en) * 2000-07-03 2003-07-23 Epichem Limited An apparatus for the delivery of precursors in the vapour phase to epitaxial reactor sites
EP1329540A3 (en) * 2000-07-03 2003-11-05 Epichem Limited An apparatus for the delivery of precursors in the vapour phase to epitaxial reactor sites
WO2007121202A1 (en) * 2006-04-11 2007-10-25 Applied Materials, Inc. Apparatus and methods for chemical vapor deposition
JP2009533556A (en) * 2006-04-11 2009-09-17 アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated Apparatus and method for chemical vapor deposition
US7967911B2 (en) 2006-04-11 2011-06-28 Applied Materials, Inc. Apparatus and methods for chemical vapor deposition
US8313804B2 (en) 2006-04-11 2012-11-20 Applied Materials, Inc. Apparatus and methods for chemical vapor deposition
JP2013040410A (en) * 2006-04-11 2013-02-28 Applied Materials Inc Apparatus and method for chemical vapor deposition
JP2015007286A (en) * 2009-03-11 2015-01-15 レール・リキード−ソシエテ・アノニム・プール・レテュード・エ・レクスプロワタシオン・デ・プロセデ・ジョルジュ・クロード Bubbling supply system for stable precursor supply

Also Published As

Publication number Publication date
JPH0379436B2 (en) 1991-12-18

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