JPS60128297A - Control device for automatic change-over of plating current - Google Patents

Control device for automatic change-over of plating current

Info

Publication number
JPS60128297A
JPS60128297A JP23771383A JP23771383A JPS60128297A JP S60128297 A JPS60128297 A JP S60128297A JP 23771383 A JP23771383 A JP 23771383A JP 23771383 A JP23771383 A JP 23771383A JP S60128297 A JPS60128297 A JP S60128297A
Authority
JP
Japan
Prior art keywords
plating
circuit
current density
line speed
plating current
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP23771383A
Other languages
Japanese (ja)
Other versions
JPH0148359B2 (en
Inventor
Katsumi Nagano
長野 勝美
Hiroo Goshi
五師 弘雄
Haruo Kawamoto
河本 晴夫
Shigeji Hamada
浜田 茂治
Yasuo Shiiki
椎木 靖雄
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Nippon Steel Corp
Original Assignee
Mitsubishi Electric Corp
Nippon Steel Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp, Nippon Steel Corp filed Critical Mitsubishi Electric Corp
Priority to JP23771383A priority Critical patent/JPS60128297A/en
Publication of JPS60128297A publication Critical patent/JPS60128297A/en
Publication of JPH0148359B2 publication Critical patent/JPH0148359B2/ja
Granted legal-status Critical Current

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  • Electroplating Methods And Accessories (AREA)

Abstract

PURPOSE:To improve the gloss and corrosion resistance of a plated surface by setting a spurious line speed in the stage of changing the number of plating cells and making current density controllable within a prescribed range. CONSTITUTION:A titled device is provided with the 1st calculation circuit 16, a setting circuit 17 which sets the section where the current density is short by the output from the circuit 16 and the 2nd calculation circuit 10 which compensates current reference according to the setting of the circuit 17 and the line speed of the strip 1. The circuit 16 calculates the section where the plating current density is deficient in the stage of changing the number of plating cells 3a- d according to the prescribed patterns of the line speed versus the plating current density selected by the current reference. The selection of the cells and the plating current are controlled according to the result obtd. by comparing the total sum of the plating current and the current reference set so as to obtain the current density in the prescribed range in accordance with the line speed.

Description

【発明の詳細な説明】 〔発明の技術分野〕 この発明は、メッキ電流密度を所定範囲内に制御し、特
にメツキセルの数の変更時においてもメッキ電流密度を
所定範囲内に制御する装置に関する。
DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] The present invention relates to an apparatus for controlling plating current density within a predetermined range, and particularly for controlling plating current density within a predetermined range even when changing the number of mesh cells.

〔従来技術〕[Prior art]

従来、この種の装置として第1図に示すものがあった。 Conventionally, there has been a device of this type as shown in FIG.

図において1は図示矢印方向に進行するメッキ対象のス
トリップ、2はストリップ1のライン速度を検出する検
出器、33〜3dはストリップ1にメッキするメツキセ
ル、4a〜4dはメツキセル33〜4dに供給されるメ
ッキ電流の検出器、5a〜5dはメッキ電流を供給する
整流器K、6a〜6dは整流器5a〜5dを介してメン
キセル32〜3dに供給する電流が所定値となるように
制御するコントローラ、78〜7dはメッキ電流を分配
し、コン)ローラ6a〜6dに供給する分配器、8は検
出器43〜4dの出力によシメツキ電流の総和をめる加
算器、9はPI(比例、積分)コントローラであシ、出
力信号を分配器7a〜7dに供給する。10は計算回路
であり、検出器2を介して得るストリップ1のライン速
度と、電流基準との差をめ、加算器10aに供給する。
In the figure, 1 is a strip to be plated that advances in the direction of the arrow shown in the figure, 2 is a detector that detects the line speed of strip 1, 33 to 3d are metsuki cells that plate the strip 1, and 4a to 4d are supplied to metsuki cells 33 to 4d. 5a to 5d are rectifiers K for supplying the plating current; 6a to 6d are controllers for controlling the current supplied to the Menki cells 32 to 3d via the rectifiers 5a to 5d to a predetermined value; 78 ~7d is a distributor that distributes the plating current and supplies it to the control rollers 6a~6d; 8 is an adder that adds the sum of the plating currents to the outputs of the detectors 43~4d; 9 is a PI (proportional, integral) A controller supplies output signals to distributors 7a to 7d. 10 is a calculation circuit which calculates the difference between the line speed of the strip 1 obtained via the detector 2 and the current reference and supplies it to the adder 10a.

加算器10aは加算器8のメッキ電流の総和と計算回路
10の出力との差をめ、PIコントローラ9に供給する
。11は目付量、板幅、電極効率及びライン速度から総
合電流基準を計算し、これを計算回路10に供給する電
流基準回路、12はメツキセル3a〜3dを選択する選
択回路、13はヒステリシス回路、14は検出器2のパ
ルス及び次に述べるパターンによシメツキセル数の増減
速度を検出する検出回路、15は電流基準回路11から
の電流基準によシライン対電流密度のパターンを計算す
る計算回路である。
The adder 10a calculates the difference between the total plating current of the adder 8 and the output of the calculation circuit 10, and supplies the difference to the PI controller 9. 11 is a current reference circuit that calculates a total current reference from the basis weight, plate width, electrode efficiency, and line speed and supplies this to the calculation circuit 10; 12 is a selection circuit that selects the Metx cells 3a to 3d; 13 is a hysteresis circuit; 14 is a detection circuit that detects the rate of increase/decrease in the number of shimetsu cells based on the pulse of the detector 2 and the pattern described below; 15 is a calculation circuit that calculates the pattern of the current density versus the current density based on the current reference from the current reference circuit 11. .

次に動作を説明する。各メツキセル3a〜3dに供給さ
れるメッキ電流は検出器4a〜4dにより検出され、加
算器8によシ加算される。これによりめられたメッキ電
流の総和は、加算器10aにより計算回路10の総合電
流基準との差がめられ、コントローラ9に供給される。
Next, the operation will be explained. The plating currents supplied to each of the mesh cells 3a to 3d are detected by detectors 4a to 4d, and added by an adder 8. The sum of the plating currents thus determined is calculated by an adder 10a as a difference from the total current reference of the calculating circuit 10, and is supplied to the controller 9.

PIコントロー29は加算器10aから与えられる差に
基づき分配された電流基準を分配器73〜7dに供給す
る。分配器7a〜7dはメッキ電流を各コントローラ6
3〜6d、整流器5a〜5d及び整流器42〜4dを介
してメツキセル33〜3dに供給する。
The PI controller 29 supplies the current reference distributed based on the difference provided by the adder 10a to the distributors 73-7d. The distributors 7a to 7d distribute the plating current to each controller 6.
3 to 6d, rectifiers 5a to 5d, and rectifiers 42 to 4d to Metxcells 33 to 3d.

検知器2によって検出されたストリップ1のライン速度
は、計算回路10に入力され、計算回路10はこのライ
ン速度の増減に従い、電流基準回路11によシ設定され
た電流基準を増減させる。
The line speed of the strip 1 detected by the detector 2 is input to the calculation circuit 10, and the calculation circuit 10 increases or decreases the current reference set by the current reference circuit 11 in accordance with the increase or decrease in the line speed.

例えばライン速度が増大したときは、電流基準は増加さ
れる。
For example, when the line speed increases, the current reference is increased.

計算回路15は、電流基準回路11からの電流基準によ
りライン連間対メッキ電流密度のパターンを計算し、検
出回路14に入力する。検出回路14はストリップ1の
ライン速度を示す検出器2のライン速度と、計算回路1
5のパターンとにより、メツキセル数の増減速度を検出
し、ヒステリシス回路13はこの増減速度にヒステリシ
スを与える。選択回路12はヒステリシス回路13の出
力に従って分配器73〜7dの選択をする。
The calculation circuit 15 calculates a pattern of plating current density with respect to line continuity based on the current reference from the current reference circuit 11, and inputs the pattern to the detection circuit 14. The detection circuit 14 detects the line speed of the detector 2 indicating the line speed of the strip 1 and the calculation circuit 1.
Based on the pattern No. 5, the rate of increase/decrease in the number of Metx cells is detected, and the hysteresis circuit 13 applies hysteresis to this rate of increase/decrease. The selection circuit 12 selects the distributors 73 to 7d according to the output of the hysteresis circuit 13.

第2図は検出器2により検出されるライン速度■と各メ
ツキセル3a〜3dのメッキ電流密[Dとを座標軸とし
てメツキセル3a〜3dの選択を示すグラフである。D
sはメツキセル1台当りの定格電流密度を示す。い棟、
ラインの運転が開始され、ライン速度■がメッキ電流密
度の下限値DLに対応する速度■、1に到達すると、メ
ツキセル3aが投入される。更にライン速度■が上昇し
、上限値Duの速度U、に到達すると、メツキセル3b
も投入され、電流密度りは矢印で示すように低下し、メ
ツキセル数n = 2の)ζターンの交点により示すも
のとなる。以下同様に、ライン速度■の上昇が続くと、
速度U2でメツキセル数n = 3となり、速度U3で
メツキセル数n = 4となり、最高速度VMAXとな
る。
FIG. 2 is a graph showing the selection of the mesh cells 3a to 3d with the line speed (1) detected by the detector 2 and the plating current density [D] of each of the mesh cells 3a to 3d as coordinate axes. D
s indicates the rated current density per Metsuki cell. The building,
When the line operation is started and the line speed (2) reaches the speed (2), 1 corresponding to the lower limit value DL of the plating current density, the Metsuki cell 3a is introduced. When the line speed ■ further increases and reaches the speed U of the upper limit Du, the Metsuki cell 3b
is also input, the current density decreases as shown by the arrow, and becomes the one shown by the intersection of the ζ turns (with the number of cells n = 2). Similarly, if the line speed ■ continues to increase,
At speed U2, the number of mesh cells n = 3, and at speed U3, the number of mesh cells n = 4, resulting in the maximum speed VMAX.

ライン速度■が減少される場合は、前述の上昇の場合の
逆となり、メツキセル数nが順次少なくされる。この場
合、メツキセル数nを減少するときは、動作の安定のた
めにヒステリシスをヒステリシス回路13によシ与えて
いるので、増加させるときの軌跡と図示のように一致し
ない、従来の装置は、以上のように構成されているので
、メツキセル数の変更時に電流密度の不足が発生する欠
点があった。
When the line speed (2) is decreased, it is the opposite of the above-mentioned increase, and the number of mesh cells (n) is sequentially decreased. In this case, when decreasing the number of mesh cells n, hysteresis is applied to the hysteresis circuit 13 to stabilize the operation, so the trajectory when increasing the number n does not match as shown in the figure. Since the structure is as follows, there was a drawback that the current density was insufficient when changing the number of metsuki cells.

〔発明の概要〕[Summary of the invention]

この発明は、上記のような従来のものの欠点を除去する
ためになされたもので、メッキ電流密度が不足となる区
間を最少となるようにし、これを許容範囲内に制御でき
るようにしたメッキ電流自動切換制御装置を提供するこ
とを目的とする。
This invention was made in order to eliminate the drawbacks of the conventional ones as described above, and it is possible to minimize the section where the plating current density is insufficient and to control this within an allowable range. The purpose of the present invention is to provide an automatic switching control device.

〔発明の実施例〕[Embodiments of the invention]

以下、この発明の一実施例を図について説明する。第2
図において、第1図と同一符号の部分は同一部分を示し
、16は第4図に示すメッキ電流密度の不足区間L′2
〜L2.L’、〜1,3、■、′4〜L 4を計算回路
15の山男に従って計算する計算回路、17は計算回路
16によシ計算された不足区間L′2〜L 2 s L
’S〜TJ、、 、 L’、〜L4 において使用する
ライン速度(疑似ライン速度)を設定する設定回路で、
これを計算回路10に入力する。
An embodiment of the present invention will be described below with reference to the drawings. Second
In the figure, parts with the same reference numerals as in FIG.
~L2. L', ~1,3,■,'4~L A calculation circuit that calculates 4 according to Yamao of the calculation circuit 15, 17 is the insufficient interval L'2~L2sL calculated by the calculation circuit 16.
A setting circuit that sets the line speed (pseudo line speed) used in 'S~TJ, , L', ~L4,
This is input to the calculation circuit 10.

次に動作を説明する。第4図は第3図に示す装置の動作
特性図である。ライン速度■をその最高速度VMAX 
まで上昇させる場合は、図示のように速度L1でメツキ
セル3aが投入され、各メツキセルの定格電流密度Ds
に接するU、でメツキセル3bが投入される。これによ
り、電流密度がL′。
Next, the operation will be explained. FIG. 4 is an operational characteristic diagram of the device shown in FIG. 3. line speed ■ its maximum speed VMAX
When increasing the current density to 1, the Metsuki cells 3a are introduced at a speed L1 as shown in the figure, and the rated current density Ds of each Metsuki cell is increased.
Metsuki cell 3b is introduced at U, which is in contact with . As a result, the current density becomes L'.

まで一旦低下し、メツキセル数n=2のパターンに沿っ
てり、〜U2に達する。計算回路16は、ここでメッキ
電流の不足区間L/、〜L2 を計算し7、設定回路1
7はこの区間L/、〜L2ではライン速度■をり、と設
定し、引算回路10に入力する。
It follows the pattern of the number of metxoxels n=2 and reaches ~U2. The calculation circuit 16 calculates the plating current shortage interval L/, ~L2 7, and sets the setting circuit 1.
7 is set as L/ in this section, and the line speed is set as - L2, and is input to the subtraction circuit 10.

以下同様に不足区間L/、〜L、ではライン速度Vをり
、に設定し、不足区間L′4〜L4ではライン速度L4
に設定する。計算回路10は、このように設定されたラ
イン速度り、% L3、L4に従って総合電流基準の補
償をする。
Similarly, in the insufficient sections L/, ~L, the line speed V is set to , and in the insufficient sections L'4 to L4, the line speed is set to L4.
Set to . The calculation circuit 10 compensates the total current reference according to the line speed, % L3, L4 set in this way.

ライン速度■の減少の場合は、以上説明したライン速度
■の増加の場合の逆となるが、図示のようにヒステリシ
ス回路13の働きによりメツキセル数nの変更時にヒス
テリシスが付加される。なお第4図において、tJ、 
=L’2. U、=L’、、U、=L’4である。
When the line speed (2) decreases, it is the opposite of the case where the line speed (2) increases as described above, but as shown in the figure, hysteresis is added by the action of the hysteresis circuit 13 when changing the number n of mesh cells. In addition, in FIG. 4, tJ,
=L'2. U,=L', ,U,=L'4.

〔発明の効果〕〔Effect of the invention〕

以上のようにこの発明によれば、メンキセル数の変更時
は模擬的なライン速度を設定し7、メッキ電流密度を所
定範囲内の値に制御するので、メッキ面の光沢及びメッ
キの耐腐食性を向上させる効果がある。
As described above, according to the present invention, when changing the number of Menki cells, a simulated line speed is set 7 and the plating current density is controlled within a predetermined range, thereby improving the gloss of the plated surface and the corrosion resistance of the plating. It has the effect of improving.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は従来のメッキ電流自動切換制御装置のブロック
図、第2図は第1図に示す装置のメッキ電流密度特性を
示すグラフ、第3図はこの発明の一実施例によるメッキ
電流自動切換制御装置のブロック図、第4図は第3図に
示す装置〆−のメッキ電流密度特性を示すグラフである
。 1・・・ストリップ、2,4a〜4d・・検出器、32
〜3d・・・メツキセル、 5a〜5d・・・整流器、
68〜6d・・・コントローラ、73〜7d・・・分配
器、 8.10a・・・加算器、 9・・・Piコント
ローラ、10.15.16・・・計算回路、11・・・
電流基準回路、12・・・選択回路、17・・・設定回
路。 なお図中、同一符号は同一部分を示す。 代理人 大岩増雄 特許庁長官殿 1.事件の表示 詩塵l昭 58−237713号2、
発明の名称 メッキ電流自動切換制御装置 ;3.補正をする者 5、補正の対象
Fig. 1 is a block diagram of a conventional plating current automatic switching control device, Fig. 2 is a graph showing plating current density characteristics of the device shown in Fig. 1, and Fig. 3 is a plating current automatic switching control device according to an embodiment of the present invention. FIG. 4 is a block diagram of the control device, and is a graph showing plating current density characteristics of the device shown in FIG. 3. 1... Strip, 2, 4a to 4d... Detector, 32
~3d...Metsuki cell, 5a~5d...Rectifier,
68-6d...Controller, 73-7d...Distributor, 8.10a...Adder, 9...Pi controller, 10.15.16...Calculation circuit, 11...
Current reference circuit, 12... selection circuit, 17... setting circuit. Note that in the figures, the same reference numerals indicate the same parts. Agent Masuo Oiwa, Commissioner of the Japan Patent Office 1. Incident display Shijin Isho 58-237713 No. 2,
Name of the invention Plating current automatic switching control device; 3. Person making correction 5, subject of correction

Claims (1)

【特許請求の範囲】[Claims] 複数のメンキセルに供給されるメッキ電流の総和と、メ
ンキされるストリップのライン速度に対応して所定範囲
のメッキ電流密度を得るように設定された’rM流基準
基準比較した結果に従い、上記メツキセルの選択及びメ
ッキ電流を制御するメッキ電流自動切換制御装置におい
て、上記電流基準により選択された上記ライン速度対メ
ッキ電流密度の所定パターンに従ってメンキセル数の変
更時にメッキ電流密度が不足となる区間を計算する第1
計算回路と、この第1計算回路の出力によシメツキ電流
密度が不足となる上記区間を設定する設定回路と、この
設定回路の設定及び上記ライン速度に従って上記電流基
準の補償をする第2計算回路とを備えたことを特徴とす
るメッキ電流自動切換制御装置。
According to the results of comparing the sum of plating currents supplied to multiple Menki cells with the 'rM flow standard, which is set to obtain a plating current density within a predetermined range corresponding to the line speed of the strip being coated, In the plating current automatic switching control device that controls the selection and plating current, the plating current density is calculated in accordance with the predetermined pattern of the line speed versus the plating current density selected based on the current reference, and the section where the plating current density becomes insufficient when the number of Menki cells is changed. 1
a calculation circuit, a setting circuit for setting the section where the shimetsu current density is insufficient due to the output of the first calculation circuit, and a second calculation circuit for compensating the current reference according to the setting of the setting circuit and the line speed. A plating current automatic switching control device characterized by comprising:
JP23771383A 1983-12-16 1983-12-16 Control device for automatic change-over of plating current Granted JPS60128297A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP23771383A JPS60128297A (en) 1983-12-16 1983-12-16 Control device for automatic change-over of plating current

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP23771383A JPS60128297A (en) 1983-12-16 1983-12-16 Control device for automatic change-over of plating current

Publications (2)

Publication Number Publication Date
JPS60128297A true JPS60128297A (en) 1985-07-09
JPH0148359B2 JPH0148359B2 (en) 1989-10-18

Family

ID=17019391

Family Applications (1)

Application Number Title Priority Date Filing Date
JP23771383A Granted JPS60128297A (en) 1983-12-16 1983-12-16 Control device for automatic change-over of plating current

Country Status (1)

Country Link
JP (1) JPS60128297A (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54858A (en) * 1977-06-03 1979-01-06 Matsushita Electronics Corp Color picture tube

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54858A (en) * 1977-06-03 1979-01-06 Matsushita Electronics Corp Color picture tube

Also Published As

Publication number Publication date
JPH0148359B2 (en) 1989-10-18

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