JPS60127749A - Power semiconductor device - Google Patents
Power semiconductor deviceInfo
- Publication number
- JPS60127749A JPS60127749A JP23655283A JP23655283A JPS60127749A JP S60127749 A JPS60127749 A JP S60127749A JP 23655283 A JP23655283 A JP 23655283A JP 23655283 A JP23655283 A JP 23655283A JP S60127749 A JPS60127749 A JP S60127749A
- Authority
- JP
- Japan
- Prior art keywords
- silicone grease
- power semiconductor
- semiconductor device
- mounting surface
- transistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3737—Organic materials with or without a thermoconductive filler
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
Description
【発明の詳細な説明】
〔発明の技術分野〕
この発明は、熱伝導性を良好にし冷却効果ン向上せしめ
た電力半導体装置に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] The present invention relates to a power semiconductor device that has good thermal conductivity and improved cooling effect.
従来のこの種の装置としては第1図に示すようなものが
ある。すなわち、この図において、1は電力半導体装置
、例えばトランジスタモジュールで、2は前記トランジ
スタモシュ・−ル1のエミツタ、3は前記トランジスタ
モジュール10ベース、4は前記トランジスタモジュー
ル1のコレクタ、5は前記トランジスタモジュール1を
冷却体(図示せず)K密着固定するための取付面で、例
えば銅ベースである。A conventional device of this type is shown in FIG. That is, in this figure, 1 is a power semiconductor device, for example, a transistor module, 2 is the emitter of the transistor module 1, 3 is the base of the transistor module 10, 4 is the collector of the transistor module 1, and 5 is the transistor This is a mounting surface for closely fixing the module 1 to a cooling body (not shown) K, and is made of, for example, a copper base.
次に動作について説明する。トランジスタモジュール1
が電流を流している状態では、トランジスタの損失によ
る熱が発生する。その定め、トランジスタのジャンクシ
ョン温度ヲ許容値内におさえるべ(ジャックジョンにて
発生した熱Z冷却体への取付面たる銅ベース5に伝導し
シリコングリスを介して冷却体に密着固定し、冷却体に
伝導さrtk熱を冷却している。Next, the operation will be explained. Transistor module 1
When the transistor is conducting current, heat is generated due to loss in the transistor. As a rule, the junction temperature of the transistor must be kept within the allowable value (the heat generated in the jack is conducted to the copper base 5, which is the mounting surface to the cooling body, and is tightly fixed to the cooling body through silicone grease, It conducts RTK heat to cool it.
従来の電力半導体装置は、以上のよ5Km成されている
ので、冷却体に密着固定する際の使用工程においてシリ
コングリスを塗布しなげればならなかっに0
しかし、上記使用工程は、例えば電力半導体装置を用い
て応用製品を組立てる工程であり、配線用リード線の切
断(ず等が多い工程であり、この使用工程でシリコング
リスを塗布する場合には、異やの混入する恐れのない電
力半導体装置の製造工程に比べ、異物が多く、シリコン
グリス!塗布した密着固定面に異物か混入することがあ
り熱伝導性を悪(するなどの欠点があった。Conventional power semiconductor devices have a length of 5 km as described above, so it is necessary to apply silicone grease during the usage process when closely fixing them to a cooling body. This is the process of assembling applied products using equipment, and it is a process that often involves cutting wiring lead wires.When applying silicone grease in this process, it is necessary to apply silicone grease to power semiconductors without the risk of contamination. Compared to the manufacturing process of the device, there are many foreign substances, and there are disadvantages such as foreign substances can get mixed into the tightly fixed surfaces coated with silicone grease, which can cause poor thermal conductivity.
この発明は、上記のような従来のものの欠点を除去する
定めになされたもので、電力半導体装置の取付面に異物
の混入の恐れの少ない環境ン有する製造工程において、
シリコングリスをあらかじめ塗布し、使用工程忙て密着
固定する時点fで塗布面を覆う手段により異物混入の恐
jが少なく信頼性の高い電力半導体装置を提供すること
ケ目的としている。The present invention has been made to eliminate the drawbacks of the conventional products as described above, and is intended to be used in manufacturing processes that have an environment in which there is little risk of contamination of the mounting surface of power semiconductor devices with foreign matter.
It is an object of the present invention to provide a highly reliable power semiconductor device that is less likely to be contaminated with foreign matter by applying silicone grease in advance and covering the coated surface at the time f when it is tightly fixed during the use process.
h人工、この発明の一実施例を第2図、第3図について
説明する。An embodiment of the present invention will be described with reference to FIGS. 2 and 3.
これらの図において、1〜5は第1図と同じものであり
、6は冷却体との取付面である前記銅ベース5に塗布さ
t′Lり熱伝導性グリスで、例えばシリコングリスが用
いられる。1は前記銅ペース5に塗布さnrsシリコン
グリス6を被覆してお(着脱自在に装着さt′1k、例
えば柔軟性物質の被膜であるポリエチレン膜である。In these figures, 1 to 5 are the same as in Fig. 1, and 6 is a thermally conductive grease applied to the copper base 5, which is the mounting surface for the cooling body, such as silicone grease. It will be done. 1 is coated with NRS silicone grease 6 applied to the copper paste 5 (removably attached t'1k, for example, a polyethylene film which is a flexible material coating).
次に作用について説明する。トランジスタモジュールが
電流′ft流している状態ではトランジスタの損失によ
る熱が発生し、そt′tt鋼ベースSIL熱伝導するよ
5に構成されている。Next, the effect will be explained. When the transistor module is passing current, heat is generated due to losses in the transistor, and the steel base SIL is configured to conduct heat.
したがって、この発明では、前記した製造工程終了後、
使用工程までは第2図のように銅ベース5にシリコング
リス6ケ介してポリエチレン[7を貼布しておき、使用
工程におい?)ランジスタのジギンクション温度を許容
値内におさえるkめ、ポリエチレン膜1をはがし、シリ
コングリス6面を冷却体に密着固定し冷却体に熱伝導さ
せ冷却することができる。Therefore, in this invention, after the above manufacturing process is completed,
Until the use process, polyethylene [7] was pasted on the copper base 5 through 6 pieces of silicone grease as shown in Figure 2. ) In order to keep the jigginction temperature of the transistor within an allowable range, the polyethylene film 1 is peeled off, and the silicone grease 6 surface is closely fixed to a cooling body to conduct heat to the cooling body for cooling.
なお、上記実施例においては、トランジスタモジュール
1について述べたが、サイリスクモジュール、GTOモ
ジュール等他の電力半導体装置であっても同様の効果を
奏する。In the above embodiment, the transistor module 1 has been described, but the same effect can be achieved with other power semiconductor devices such as a SIRIS module or a GTO module.
また、上記実施例において、シリコングリス6を用いた
が、熱伝導性グリスであれば何であっても同様の効果を
奏する。Further, in the above embodiment, silicone grease 6 was used, but any thermally conductive grease can have the same effect.
さらに上記実施例において、ポリエチレン膜7を用いた
が、熱伝導性グリスを覆っておくものであればいかなる
ものでもよく、同様の効果を奏する。Further, in the above embodiment, the polyethylene film 7 is used, but any film may be used as long as it covers the thermally conductive grease, and the same effect will be obtained.
以上説明したように、この発明は、電力半導体装置の冷
却体への取付面である銅ベースに熱伝導性グリスを塗布
し、この熱伝導性グリスを適宜な被膜で被覆しておき、
異物の混入の恐れのない工程において、前記被膜をはが
して熱伝導性グリスを介して銅ベースZ冷却体に密着固
定するように構成したので、異物の混入の恐nのある工
程にて応用製品を組立よる際にも異物の混入を防止でき
信頼性の高い電力半導体装置が得らnる効果がある。As explained above, the present invention involves applying thermally conductive grease to the copper base that is the mounting surface of the power semiconductor device to the cooling body, and covering the thermally conductive grease with an appropriate film.
Since the film is peeled off and tightly fixed to the copper base Z cooling body through thermally conductive grease in a process where there is no risk of contamination of foreign matter, the product cannot be applied in a process where there is a risk of contamination of foreign matter. This also has the effect of preventing foreign matter from entering during assembly, resulting in a highly reliable power semiconductor device.
第1図は従来の電力半導体装置の斜視図、第2図はこの
発明の一実施例による電力半導体装置itを示す斜視図
、第3図は第2図、の部分拡大図である。
図中、1はトランジスタモジュール、5は銅ベース、6
はシリコングリス、7はポリエチレン膜である。
なお、図中の同一符号は同一または相当部分l示す。
代理人 大岩増雄 (外2名)FIG. 1 is a perspective view of a conventional power semiconductor device, FIG. 2 is a perspective view showing a power semiconductor device IT according to an embodiment of the present invention, and FIG. 3 is a partially enlarged view of FIG. 2. In the figure, 1 is a transistor module, 5 is a copper base, and 6 is a transistor module.
7 is silicone grease, and 7 is a polyethylene film. Note that the same reference numerals in the figures indicate the same or corresponding parts. Agent Masuo Oiwa (2 others)
Claims (1)
T′LL取付面を有する電力半導体装置において、前記
取付面に前記熱伝導性グリスy!−塗布した後、前記取
付面を被膜により着脱自在忙覆ったことt青黴とする電
力半導体装置。In a power semiconductor device having a mounting surface T'LL for a stator in close contact with a cooling body via thermally conductive grease, the thermally conductive grease y! is provided on the mounting surface. - A power semiconductor device in which, after coating, the mounting surface is removably covered with a coating.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP23655283A JPS60127749A (en) | 1983-12-15 | 1983-12-15 | Power semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP23655283A JPS60127749A (en) | 1983-12-15 | 1983-12-15 | Power semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS60127749A true JPS60127749A (en) | 1985-07-08 |
Family
ID=17002339
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP23655283A Pending JPS60127749A (en) | 1983-12-15 | 1983-12-15 | Power semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS60127749A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2750251A1 (en) * | 1996-06-21 | 1997-12-26 | Thermalloy Inc | Heat sink for electronic component |
-
1983
- 1983-12-15 JP JP23655283A patent/JPS60127749A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2750251A1 (en) * | 1996-06-21 | 1997-12-26 | Thermalloy Inc | Heat sink for electronic component |
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