JPH0644600B2 - Semiconductor assembly unit - Google Patents
Semiconductor assembly unitInfo
- Publication number
- JPH0644600B2 JPH0644600B2 JP62319094A JP31909487A JPH0644600B2 JP H0644600 B2 JPH0644600 B2 JP H0644600B2 JP 62319094 A JP62319094 A JP 62319094A JP 31909487 A JP31909487 A JP 31909487A JP H0644600 B2 JPH0644600 B2 JP H0644600B2
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor
- assembly unit
- housing
- current terminal
- support
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/32—Holders for supporting the complete device in operation, i.e. detachable fixtures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/065—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
- H01L25/0655—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
- H01L25/165—Containers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1301—Thyristor
Abstract
Description
【発明の詳細な説明】 ［産業上の利用分野］ 本発明は、特許請求の範囲第１項の前提部に記載の特徴
を有するモジユール組立形式の半導体組立ユニットに関
する。DETAILED DESCRIPTION OF THE INVENTION [Industrial field of use] The present invention relates to a semiconductor assembly unit of module assembly type having the features described in the preamble of the first claim.
［従来の技術］ 少なくとも２つの半導体素子の被覆されない帯状の電流
導体部分が、鑞付けまたはばね力による圧力によって絶
縁材料の基台に固定され、電気的に接続されているモジ
ユール組立形式の半導体組立ユニットが知られている。
いわゆるハイブリット形式におけるそのような構造の半
導体は、能動的および受動的の半導体素子を備えること
ができる。[Prior Art] A semiconductor assembly of module assembly type in which at least two uncoated strip-shaped current conductor portions of a semiconductor element are fixed to a base made of an insulating material by brazing or pressure by a spring force and electrically connected. The unit is known.
Semiconductors of such a structure in the so-called hybrid form can comprise active and passive semiconductor elements.
そのような構成ユニットの場合、鑞付け結合時における
製造の過程において、構成要素のうちの１つが故障する
ことによって、全体の構造を廃棄する必要があり、磁器
上の絶縁材料基台の材料の制限のため、所望の使用条件
の回路構成に必要な面の広がりの壊れ易さが支障にな
り、公知の浮動状態の半導体モジユールは、種々の電気
装置に任意に一般的に使用することができないことが欠
点である。結局、多相装置用の数種のモジユールによる
それぞれの組立、特に組合わせによって、多くの材料お
よび労力を必要とし、さらに、熱処理は、冷却媒体およ
び種々の構造に対して極めて多額の費用を必要とする。In the case of such a component unit, in the course of manufacture during the brazing connection, the failure of one of the components necessitates the disposal of the entire structure, which results in a loss of material of the insulating material base on the porcelain. The limitations impede the fragility of the surface spread required for the circuit configuration of the desired service conditions, and the known floating semiconductor modules cannot be arbitrarily and generally used in various electrical devices. That is a drawback. After all, each assembly by several modules for multi-phase equipment, especially the combination, requires a lot of material and labor, and the heat treatment requires a very large cost for the cooling medium and various structures. And
［発明が解決しようとする問題点］ 本発明の基本的な目的は、場所をとらない構造によっ
て、一方では熱を逃がすための熱的な接触面の最適な利
用を可能にし、他方では制御回路および保護配線を考慮
して大規模集積回路を可能にし、すべての構成要素すな
わち出力回路要素および／または制御回路要素および／
または保護回路要素を、組立前に電気的に検査すること
ができ、支持体および／または冷却構成要素への固定お
よびこれらとの接続が、公知の組立形式に比べて簡単な
方法で可能であるような、モジユール組立形式の電力用
半導体組立ユニットを提供することである。Problem to be solved by the invention The basic object of the present invention is, due to the space-saving structure, on the one hand the optimum utilization of thermal contact surfaces for heat dissipation, and on the other hand the control circuit. And a protection wiring to allow for a large scale integrated circuit, all components, ie output circuitry and / or control circuitry and / or
Alternatively, the protective circuit element can be electrically inspected prior to assembly, the fixing to and the connection to the support and / or the cooling component being possible in a simpler way compared to known assembly types. Such a module assembly type power semiconductor assembly unit is provided.
［問題点を解決するための手段］ この目的は、冒頭に述べた形式の半導体構成ユニットに
おいて、特許請求の範囲第１項の特徴部分に記載の対策
によって達成される。好適な実施態様は、特許請求の範
囲第２項ないし第21項に示されている。[Means for Solving the Problems] This object is achieved in a semiconductor component unit of the type described at the outset by the measures described in the characterizing part of claim 1. Preferred embodiments are set out in claims 2 to 21.
［実施例］ 本発明による半導体組立ユニットを、第１図ないし第７
図に示された実施例によって説明する。[Embodiment] A semiconductor assembly unit according to the present invention is shown in FIGS.
This will be explained with reference to the embodiment shown in the figure.
第１図に示すように、下部電極を有する半導体ペレット
１が、基板と呼ばれる熱伝導性および電気絶縁性を有す
る板３の金属被覆された上側33に、例えば鑞付けによっ
て固く取付けられ、他方の上部電極が、通電部２を介し
て基板３の上側33の分離部分に接続され、この部分を介
して電流端子ボルト４に接続されている。半導体ペレッ
ト１の下部電極は、同様なボルト４′によって電気的に
固定して接続されている。半導体ペレット１、通電部
２、電流端子ボルト４，４′および基板３が、共に本発
明によって半導体素子Ｉを構成し、これはその周囲にお
いて、図の左縁に概略的に示された数個の湾曲固定部材
８によって、一点鎖線m2に沿ったねじを使用して、支持
体９上に分解可能に固定されている。As shown in FIG. 1, a semiconductor pellet 1 having a lower electrode is firmly attached, for example by brazing, to a metallized upper side 33 of a plate 3 having heat conductivity and electrical insulation called a substrate, and The upper electrode is connected to the separated portion on the upper side 33 of the substrate 3 via the current-carrying portion 2, and is connected to the current terminal bolt 4 via this portion. The lower electrode of the semiconductor pellet 1 is electrically fixed and connected by a similar bolt 4 '. The semiconductor pellet 1, the current-carrying part 2, the current terminal bolts 4, 4'and the substrate 3 together constitute a semiconductor element I according to the invention, which is surrounded by several pieces which are schematically shown on the left edge of the figure. The curved fixing member 8 is fixed on the support body 9 in a disassembleable manner by using a screw along the alternate long and short dash line m 2 .
基板３としては、接触金属層32,33と絶縁層31とからな
る構成にされている。基板３は特に酸化セラミックスの
板31とその両面に被覆されれた接触金属層32,33とから
なっている。基板としては、特にいわゆる直接結合方法
を使用して直接銅によって被覆された磁器板を使用する
ことができる。基板３は、半導体ペレット１を固定する
面積以上に著しく広い面の広がりを有し、これは、半導
体素子Ｉを制御および保護する半導体ペレット１に対す
る回路構成要素11の簡単で構造上好適な空間的配置およ
び固定を可能にしている。The substrate 3 is composed of contact metal layers 32 and 33 and an insulating layer 31. The substrate 3 consists in particular of a plate 31 of oxide ceramics and contact metal layers 32, 33 coated on both sides. As a substrate, it is possible in particular to use porcelain plates coated directly with copper using the so-called direct bonding method. The substrate 3 has a remarkably wide surface area which is larger than the area for fixing the semiconductor pellet 1, which means that the semiconductor component 1 for controlling and protecting the semiconductor element I is provided with a simple and structurally suitable spatial structure. It can be placed and fixed.
半導体素子をハウジングの外側の導線部分と電気的に接
続するため、ハウジング内部は導線を案内する構造を備
えている。In order to electrically connect the semiconductor element to the conductor portion outside the housing, the inside of the housing has a structure for guiding the conductor.
第１図に示すように、枠状に形成され一部分だけが示さ
れ、支持体９および蓋（図示せず）と共に半導体構成ユ
ニットのハウジングを構成するハウジング部５は、ソケ
ット状の突起51を有し、この突起は、端子ボルト４′と
ハウジング部５との間の電流端子要素と呼ばれる電流導
体６を固定する支持点として使用される。この端子要素
６は、特にねじ７，８によって両側に分解可能に固定さ
れる。支持体９に固定して取付けるため、ハウジング部
５は、さらにフランジ状張り出し部52を備え、これによ
って、線m1に沿ってねじ結合が行われる。As shown in FIG. 1, only a part is shown in the form of a frame, and the housing portion 5 that constitutes the housing of the semiconductor component unit together with the support 9 and the lid (not shown) has a socket-shaped protrusion 51. However, this projection is used as a support point between the terminal bolt 4 ′ and the housing part 5 for fixing the current conductor 6 called current terminal element. This terminal element 6 is dismountably fastened on both sides, in particular by means of screws 7, 8. To be fixedly attached to the support 9, the housing part 5 further comprises a flange-like overhang 52, by means of which a screw connection takes place along the line m 1 .
半導体ペレット１は、半導体基板上に、能動的および受
動的の機能要素、すなわちダイオード、トランジスタま
たはサイリスタのほかに抵抗および／またはキャパシタ
ンスを有することができる。The semiconductor pellet 1 can have active and passive functional elements, ie diodes, transistors or thyristors, as well as resistance and / or capacitance on the semiconductor substrate.
半導体素子Ｉは、ねじ結合によって支持体９上に固定す
ることができる。The semiconductor element I can be fixed on the support 9 by screwing.
基板３を支持体９に平らに被覆することに関する好適な
実施態様は、支持体９の方に向いた接触金属層32が、適
当に大きな熱膨張係数によって基板３を支持体９に対し
て凸面に湾曲させる材料から形成されるか、またはその
ような材料からなる少なくとも１つの部分層を備えるこ
とによって達成される。この目的のため、金属被覆32の
内側の部分層を例えば銅からつくり、外側の部分層を鉛
または錫からつくることができる。湾曲固定部材を呼ば
れる数個の固定装置８によって、基板３が支持体９に固
定される。A preferred embodiment for the flat coating of the substrate 3 on the support 9 is that the contact metal layer 32 facing the support 9 makes the substrate 3 convex with respect to the support 9 by a suitably large coefficient of thermal expansion. This is achieved by providing at least one partial layer formed of, or made of, a material that bends into a curved shape. For this purpose, the inner sublayer of the metallization 32 can be made of copper, for example, and the outer sublayer of lead or tin. The substrate 3 is fixed to the support 9 by several fixing devices 8 called bending fixing members.
半導体ペレット１は、接着剤によって基板３に固定する
こともできる。The semiconductor pellet 1 can also be fixed to the substrate 3 with an adhesive.
支持体９は、金属の組立板であることが好ましい。ま
た、支持体９は、強制冷却用の板状および塊状の冷却体
として形成することもできる。The support 9 is preferably a metal assembly plate. The support 9 can also be formed as a plate-shaped or block-shaped cooling body for forced cooling.
本発明による半導体構成ユニットの好適な実施態様は、
各半導体素子Ｉが、基板３に作用するばね部材を使用し
て支持体９と圧力によって固定して結合されるようにさ
れている。第２図ないし第４図は、それぞればね部材と
しての板ばねの配置を示している。第２図に示すよう
に、板ばね16は灼子状に形成され、伸ばされて穴が設け
られた端部が、支持体９に固定された絶縁支持点12の円
筒形突起を介して案内され、支持点12の肩部に載せら
れ、絶縁板13と穴12aを通して差し込まれた締付け円板1
5を備えたねじ14によって固定され、湾曲した端部が基
板３上に載せられる。A preferred embodiment of the semiconductor component unit according to the invention is
Each semiconductor element I is adapted to be fixedly coupled by pressure to the support 9 using a spring member acting on the substrate 3. 2 to 4 respectively show the arrangement of leaf springs as spring members. As shown in FIG. 2, the leaf spring 16 is formed in the shape of a cautery, and the end portion of the leaf spring 16 that is extended and provided with a hole is guided through the cylindrical protrusion of the insulating support point 12 fixed to the support body 9. Tightened disc 1 mounted on the shoulder of the support point 12 and inserted through the insulating plate 13 and the hole 12a.
Fixed by screws 14 with 5, the curved end is mounted on the substrate 3.
第３ａ図によれば、基板３の同様な固定が、第１図にお
いて部品５および部品51として示されているようにハウ
ジング５を形成することによって、行われている。According to FIG. 3a, a similar fixing of the substrate 3 is achieved by forming the housing 5 as shown as component 5 and component 51 in FIG.
第３ｂ図は、本質的には第３ａ図と同様な配置である
が、ハウジングの内側に導電路58が設けられ、一方の側
は電流端子要素16の端部の下側まで案内され、他方の側
はハウジングの外部の端子としての通しピン59まで案内
され、したがって電流端子要素16を介して半導体素子Ｉ
と接続されている。Fig. 3b is essentially the same arrangement as Fig. 3a, but with a conducting path 58 inside the housing, one side being guided to the underside of the end of the current terminal element 16 and the other side. Side is guided to the through pin 59 as a terminal on the outside of the housing and thus via the current terminal element 16 the semiconductor element I
Connected with.
ばね部材は、同時に通電用として設けることができ、ハ
ウジングの外側の導線部分と接続する電流端子要素とし
て構成することができる。さらに、第４図に示すよう
に、端子要素16の端部が延長され、ハウジング５のソケ
ット状の突起51に続く部分53に沿って曲げられれて外部
に引き出されている。この自由端部16bは、ハウジング
外部の導線部とのねじ接続部をつくるための穴を備える
ことができる。The spring element can be provided for energizing at the same time and can be designed as a current terminal element that connects to the conductor part on the outside of the housing. Further, as shown in FIG. 4, the end portion of the terminal element 16 is extended, bent along a portion 53 of the housing 5 following the socket-shaped projection 51, and is drawn out to the outside. This free end 16b can be provided with a hole for making a threaded connection with a conductor outside the housing.
本発明による対象の別の好適な実施態様は、第５図に示
すように、枠状に形成され支持体９上に半導体素子Ｉを
固定する押し枠と呼ばれれる物体20によって構成され
る。押し枠20は、ねじボルトまたは差し込みボルトまた
は固定装置によって支持体９と結合することができるよ
うに、その全周が基板３より突出している。図において
は、支持体９に直接固定するため、押し枠20の透孔22に
通されるねじ24とばね部材25とが設けられている。さら
に、押し枠20は、それぞれの半導体素子Ｉ用のそれぞれ
１つの開口部21を備え、その開口部の内のり幅は、半導
体ペレット１と接接続ボルト４，４′との間の基板３上
に必要な全体の通電部を収容する。さらに、押し枠20
は、電流端子要素26を通す貫通部を備え、電流端子要素
26は、折曲げ部26aによって基板３の接触層33に載せら
れ、自由端部26bが絶縁ハウジング５を通して外側に伸
びている。押し枠20によって、折曲げ部26aが、基板３
上に圧力によって固定される。押し枠20と電流端子部26
aとの間において、押し枠下側の適当な凹部（図示せ
ず）に丸コード材料27がはめ込まれることによって、支
持体９、基板３および電流端子要素26aとの間の、目的
とする押圧接触が得られる。Another preferred embodiment of the object according to the invention is constituted by an object 20 called a push frame, which is shaped like a frame and fixes the semiconductor element I on the support 9, as shown in FIG. The push frame 20 projects over its entire circumference from the substrate 3 so that it can be connected to the support 9 by means of screw bolts or insert bolts or fixing devices. In the figure, a screw 24 and a spring member 25, which are passed through the through hole 22 of the push frame 20, are provided in order to directly fix the support member 9. Further, the pushing frame 20 is provided with one opening 21 for each semiconductor element I, and the inner width of the opening is on the substrate 3 between the semiconductor pellet 1 and the connection bolts 4, 4 '. Accommodates all necessary energizers. In addition, push frame 20
Is provided with a through portion for passing the current terminal element 26,
26 is mounted on the contact layer 33 of the substrate 3 by means of a fold 26a, the free end 26b of which extends outwardly through the insulating housing 5. The pushing frame 20 causes the bent portion 26a to move to the substrate 3
Fixed by pressure on. Push frame 20 and current terminal 26
By inserting the round cord material 27 into an appropriate recess (not shown) on the lower side of the push frame between the support a, the support 9, the substrate 3 and the current terminal element 26a, the desired pressing force is achieved. Contact is obtained.
押し枠20は、任意数の半導体素子Ｉ用に構成することが
でき、特に簡単な方法で、それぞれの数の半導体素子を
同時に確実に分解可能に固定することを可能にする。さ
らに、この押し枠20は、数個の半導体素子に対して１つ
の開口部21を備えることができる。The push frame 20 can be configured for any number of semiconductor elements I and makes it possible, in a particularly simple manner, to reliably fix the respective number of semiconductor elements at the same time in a releasable manner. Furthermore, the push frame 20 can have one opening 21 for several semiconductor elements.
さらに、押し枠20は、本発明によって半導体構成ユニッ
トを作動させるための制御構成要素、および配線構成要
素11の電流導体部分18を、ハウジング内部において案内
し固定するのに適している。第１図に示すように、この
構成要素11は、基板３の上の半導体ペレット１の横に設
けることが好ましい。そのため、押し枠20は、その露出
した表面上に接続位置17を備え、こらは、電流導体部分
18を端子要素と接続するのに使用されるほか、回路の分
岐点としても使用することができる。Furthermore, the push frame 20 is suitable for guiding and fixing the control components for actuating the semiconductor component unit according to the invention and the current conductor portion 18 of the wiring component 11 inside the housing. As shown in FIG. 1, this component 11 is preferably provided beside the semiconductor pellet 1 on the substrate 3. To that end, the push frame 20 comprises on its exposed surface a connecting position 17, which is
Besides being used to connect 18 to terminal elements, it can also be used as a branch point in a circuit.
この押し枠20は、半導体素子Ｉを支持体９の上にそれぞ
れ同じ数で２列に配置する場合、およびそれらを１つの
半導体出力回路に互いに電気的に接続する場合、特に好
適に使用することができる。１つの列のすべての素子Ｉ
の一方の極、および他方の列のすべての素子Ｉの他方の
極が、それぞれ１つの共通の接続軌条を形成し、両方の
列のそれぞれの素子Ｉのそれぞれの隣接する極が、別の
接続点を形成する場合、押し枠20によって、すべての接
続軌条の一貫した固定および接続、ならびにすべての接
続点の接続を、極めて簡単に行うことができる。第５図
において、符号ＡおよびＢによって、それぞれ図面と垂
直に並べられた素子の同じ極の接続軌条を表わし、符号
Ｃによって、図面と垂直に並べて設けられ両方の列のそ
れぞれの素子の隣り合う極からなる接続点を表わすこと
によって、そのような構造が示されている。The push frame 20 is particularly preferably used when the semiconductor elements I are arranged on the support 9 in the same number in two rows and when they are electrically connected to one semiconductor output circuit. You can All elements I in one row
One pole and the other pole of all the elements I of the other row each form a common connection track, and each adjacent pole of each element I of both rows has a different connection. When forming points, the push frame 20 makes it very easy to make a consistent fixing and connection of all connecting rails, as well as connecting all connecting points. In FIG. 5, reference numerals A and B represent connecting rails of the same poles of the elements arranged vertically with respect to the drawing, and reference numeral C with the elements adjacent to each other in both columns provided perpendicularly to the drawing. Such a structure is shown by representing the connecting points of the poles.
ばね圧力によって半導体素子Ｉを支持体９と固く結合す
ることは、第５図において左の基板の左縁部に符号19で
表わされているように、押し枠20と基板３との間に板ば
ね状のばね部材を介在させることによっても達成され
る。支持体９上に設けられた半導体素子Ｉを包む絶縁ハ
ウジング５は、磁器またはプレス可能あるいは成形可能
な合成樹脂からなり、特に、ねじ留めまたはばね結合に
よって固く結合することができる。しかしながら、接着
結合によることもできる。The rigid connection of the semiconductor element I to the support 9 by means of spring pressure is between the push frame 20 and the substrate 3, as represented by the reference numeral 19 on the left edge of the left substrate in FIG. It is also achieved by interposing a leaf spring-shaped spring member. The insulating housing 5 enclosing the semiconductor element I provided on the support 9 is made of porcelain or a pressable or moldable synthetic resin, and can be firmly connected by screwing or spring connection. However, it can also be by adhesive bonding.
本発明によれば、特に、同時に電流端子要素として使用
されるばね部材を保持するのに都合のよい配置にするた
めの絶縁ハウジング５が設けられている。この目的のた
め、絶縁ハウジング５は、その内側に、電流端子要素例
えばばね部材の一部36cをはめ込むのに位置および大き
さが適した構造55を有している。第６図に、これに関す
る実施形態が部分的に断面図で示されている。支持体９
の上に基板３が設けられている。この場合、半導体ペレ
ット１および電流導体部２は無視することができる。基
板３と間隔を置いて絶縁ハウジング５の一部が設けら
れ、この絶縁ハウジング５は、フランジ状の突起52およ
び単に破線57によって示された透孔を使用して、支持体
９と固く結合されている。絶縁ハウジング５の上部端面
に、同様に絶縁材料からなる蓋28が載せられ、例えば一
点鎖線56で示されているように螺着される。電流端子要
素36は、ばね材料からなっている。この電流端子要素36
は、ハウジング内部の曲げられた端部36aによって基板
３上に載せられ、絶縁ハウジング５の溝状の切込み55の
中を蓋28の方の上方へ案内され、蓋を通してハウジング
外側へ延び、その自由端部36bにおいて、ハウジング外
部の導線部分を取り付けるための押込み部29の中止の上
に、締付け手段の差し込み穴（図示せず）が位置するよ
うに折り曲げられる。端子要素36は、蓋28に固定した
後、その内部の部分36aが、ばね力によって基板３に当
接するような形状に形成される。支持体９、ハウジング
部分５および蓋28の間には、それぞれパッキン成形部材
54,27が設けられている。According to the invention, an insulating housing 5 is provided, in particular for a convenient arrangement for holding the spring element which is simultaneously used as a current terminal element. To this end, the insulating housing 5 has on its inside a structure 55 which is suitable in position and size for fitting a current terminal element, for example a portion 36c of a spring member. An embodiment of this is shown partially in cross-section in FIG. Support 9
The substrate 3 is provided on the above. In this case, the semiconductor pellet 1 and the current conductor portion 2 can be ignored. Spaced from the substrate 3 is a portion of an insulating housing 5, which is rigidly connected to the support 9 using a flange-shaped projection 52 and a through hole indicated simply by a dashed line 57. ing. A lid 28, which is also made of an insulating material, is placed on the upper end surface of the insulating housing 5, and is screwed, for example, as shown by a chain line 56. The current terminal element 36 is made of a spring material. This current terminal element 36
Is mounted on the substrate 3 by means of the bent end 36a inside the housing, guided in the grooved notch 55 of the insulating housing 5 upwards towards the lid 28, extending through the lid to the outside of the housing and its freedom. At the end 36b, it is bent so that the insertion hole (not shown) of the tightening means is located above the stop of the push-in part 29 for mounting the conductor part outside the housing. The terminal element 36 is formed in such a shape that, after being fixed to the lid 28, an inner portion 36a of the terminal element 36 abuts on the substrate 3 by a spring force. Between the support body 9, the housing part 5 and the lid 28, a packing molding member is provided.
54,27 are provided.
第６図の実施態様の場合、ハウジング蓋28は、端子要素
部分を外部へ通す穴を有している。しかしながら、絶縁
ハウジング５が、そのような穴を備えることもでき、そ
の場合、ハウジング５のそれぞれのハウジング外側部分
は、電流導線を固定し同時にハウジング内部構造の導線
部分と接続するのに適するように構成される。In the case of the embodiment shown in FIG. 6, the housing lid 28 has a hole for passing the terminal element portion to the outside. However, the insulating housing 5 can also be provided with such holes, in which case the respective outer housing part of the housing 5 is suitable for fixing the current conductors and at the same time for connecting with the conductor part of the housing internals. Composed.
最後に、第７図は、基板３に固定された電流端子要素
が、ハウジング外部の接続個所に半導体素子を直接接続
する構造を概略的に示している。そのため、電流端子要
素は、その一つの端部46aが、例えば鑞付けによって基
板３に固定して取り付けられる。他方の曲げられた端部
46cは、切削によらない変形によって得られた、ほぼ円
筒形の突起を備えている。この突起のはめ込みに適合す
るように、ハウジング蓋28の穴28aが設けられている。
蓋をハウジング５に被せた場合、突起が適合する穴28a
にはまり込み、蓋28の穴に隣接する面部分が傾斜部46c
に載置される。電流端子要素46がハウジング蓋28を貫通
するように構成することによって、ハウジング外部の導
線部を接続することが可能になる。さらに、蓋は、電流
端子要素46を適当な寸法および形状にすることによっ
て、所望の押圧力を基板３に作用し、したがって基板３
に対する所要の接触圧力を支持体９に作用する。Finally, FIG. 7 schematically shows a structure in which the current terminal element fixed to the substrate 3 directly connects the semiconductor element to a connection point outside the housing. Therefore, the current terminal element has one end 46a fixedly attached to the substrate 3 by brazing, for example. The other bent end
46c has a substantially cylindrical protrusion obtained by deformation that does not depend on cutting. A hole 28a in the housing lid 28 is provided to fit the fitting of the protrusion.
When the lid is put on the housing 5, the hole 28a to which the protrusion fits
The surface part adjacent to the hole of the lid 28 is fitted into the inclined part 46c.
Placed on. By configuring the current terminal element 46 to extend through the housing lid 28, it is possible to connect a conductor portion outside the housing. Further, the lid exerts a desired pressing force on the substrate 3 by appropriately sizing and shaping the current terminal element 46, and thus the substrate 3
The required contact pressure for is applied to the support 9.
半導体ペレット１の直接接触装置を備えた適切な装置
は、電流端子要素を半導体ペレット１に固定することに
よって構成される。A suitable device with a direct contact device for the semiconductor pellet 1 is constructed by fixing the current terminal element to the semiconductor pellet 1.
ハウジングの外部の電流端子位置は、導線部分と接続す
るため、差し込み接触またはねじ接触を備えることがで
きる。半導体ペレット１は、接着によって基板３と固く
結合することもできる。Current terminal locations external to the housing can be provided with bayonet or screw contacts to connect with the wire section. The semiconductor pellet 1 can also be firmly bonded to the substrate 3 by adhesion.
本発明による半導体組立ユニットは、先ず、少なくとも
１つの半導体ペレット１と、その横にペレットの構造に
よって定められた数の接触ボルト４または適当に構成さ
れた接触部材とが、基板３に設けられ、半導体ペレット
が接触部材と電気的に、例えば針金状の導線部分を介し
て接着接続されることによって、製造される。このよう
にして、希望通りに処理前に検査可能な中間製品が得ら
れ、これは、検査後、別の装置によって固定することに
よるか、または同時に通電の役割をするばね部材を基板
３上に載せることによって、支持体９上に固く被覆され
る。さらに、ばね部材16,26の固定形式に応じて、ばね
部材を取付ける前に絶縁ハウジング５を支持体９に固定
することが必要である場合がある。ハウジング蓋28によ
って案内され、ばね作用を示す電流端子要素36を備えた
構造の場合、電流端子要素36は蓋28に固定される。その
後、電流端子要素36は、同時に絶縁ハウジング上に蓋を
被せることによって基板３のそれぞれの接触位置に載せ
られ、蓋は押圧装置によって絶縁ハウジング５に螺着さ
れる。このようにすることによって、支持体９、基板３
および電流端子要素の接触が、ばね力によって行われ
る。In the semiconductor assembly unit according to the invention, first, at least one semiconductor pellet 1 is provided on its side with a number of contact bolts 4 or appropriately configured contact members defined by the structure of the pellet, on a substrate 3. The semiconductor pellet is manufactured by being electrically connected to the contact member electrically, for example, via a wire-shaped wire portion. In this way, an intermediate product can be obtained which can be inspected as desired before treatment, which is either fixed by another device after the inspection or at the same time a spring element on the substrate 3 which serves for energization is provided on the substrate 3. By mounting, it is firmly coated on the support 9. Furthermore, depending on the fixing type of the spring members 16, 26, it may be necessary to fix the insulating housing 5 to the support 9 before mounting the spring members. In the case of a construction with a current terminal element 36 guided by a housing lid 28 and exhibiting a spring action, the current terminal element 36 is fixed to the lid 28. The current terminal elements 36 are then placed on the respective contact positions of the substrate 3 by simultaneously covering the insulating housing with a lid, which is screwed onto the insulating housing 5 by a pressing device. By doing so, the support 9 and the substrate 3
And the contact of the current terminal elements is made by spring force.
第１図は本発明の半導体組立ユニットの一実施例を示す
側断面図、第２図、第３図、第４図は第１図に示す装置
の端子接続部のそれぞれ別の実施例を部分的に示す側断
面図、第５図は第１図に示す装置を構成する半導体素子
固定装置の一実施例を示す側断面図、第６図および第７
図は第１図に示す装置の端子接続部のそれぞれ別の実施
例を部分的に示す側断面図である。 Ｉ……半導体素子、１……半導体ペレット、 ２……電流導体部分、３……基板、 ５……絶縁ハウジング、 ６……電流端子要素、９……支持体、 10……固定湾曲部材、12……絶縁支持点、 16……電流端子要素、 16b……電流端子要素自由端部、 20……押し枠、26……電流端子要素、 28……ハウジング蓋、28a……ハウジング穴、 31……絶縁板（絶縁層）、 32,33……接触金属被覆層、 36……電流端子要素、 36b……電流端子要素自由端部、 36c……電流端子要素部分、 46……電流端子要素、58……導電路、 59……通しピン。FIG. 1 is a side sectional view showing an embodiment of a semiconductor assembly unit of the present invention, and FIGS. 2, 3, and 4 are partial views showing another embodiment of the terminal connecting portion of the apparatus shown in FIG. FIG. 5 is a side sectional view schematically showing a semiconductor element fixing device which constitutes an embodiment of the device shown in FIG. 1, FIG. 5 and FIG.
1 is a side sectional view partially showing another embodiment of the terminal connecting portion of the device shown in FIG. I ... Semiconductor element, 1 ... Semiconductor pellet, 2 ... Current conductor part, 3 ... Substrate, 5 ... Insulation housing, 6 ... Current terminal element, 9 ... Support, 10 ... Fixed bending member, 12 ... Insulation support point, 16 ... Current terminal element, 16b ... Current terminal element free end, 20 ... Push frame, 26 ... Current terminal element, 28 ... Housing lid, 28a ... Housing hole, 31 …… Insulation plate (insulation layer), 32,33 …… Contact metal coating layer, 36 …… Current terminal element, 36b …… Current terminal element free end, 36c …… Current terminal element part, 46 …… Current terminal element , 58 …… Conductive path, 59 …… Through pin.
Claims (15)
かい合って両側に金属被覆層(33)を備えた絶縁板(3)の
片側に、半導体要素(1)が設けられ、半導体要素(1)およ
び絶縁板(3)を収容する絶縁体ハウジング(52)が冷却体
(9)に設けられ、半導体要素(1)が取り付けられた接触金
属層(33)の片側と接触するための電流端子要素(6,16,2
6,36,46)が設けられた、対応する電流導体部分(2,4,6,1
6,26,36,46)を備えた少なくとも２つの半導体要素(1)を
有する少なくとも１つのモジユール板(1)からなるモジ
ユール組立形式の半導体組立ユニットにおいて、 モジユール板(1)が電流端子要素(6,16,26,36,46)によっ
て接触金属層(33)および支持体(9)の少なくとも１つの
解放部分に押圧され、したがって同時に電気的に接触す
ることを特徴とする半導体組立ユニット。1. A semiconductor element (1) is provided on one side of an insulating plate (3) provided with a metal coating layer (33) on both sides facing a cooling body which serves as a support (9), and a semiconductor element (1) is provided. The insulator housing (52) containing the element (1) and the insulating plate (3) is a cooling body.
Current terminal elements (6, 16, 2) provided on (9) for contacting one side of the contact metal layer (33) to which the semiconductor element (1) is attached.
6,36,46), corresponding current conductor parts (2,4,6,1)
6,26,36,46) in a module assembly type semiconductor assembly unit comprising at least one module plate (1) having at least two semiconductor elements (1), wherein the module plate (1) is a current terminal element (1). 6,16,26,36,46) a semiconductor assembly unit characterized in that it is pressed against the contact metal layer (33) and at least one release part of the support (9) and thus makes electrical contact at the same time.
成され、支持体(9)に固定された絶縁体ハウジングに取
り付けられ、モジユール板(1)が、接触金属被覆層部分
(33)の解放部分において、圧力によって、支持体に熱接
触し電気的に接触する、請求項１記載の半導体組立ユニ
ット。2. A current terminal element (6,16,36,46) formed as a spring and mounted on an insulator housing fixed to a support (9), the module plate (1) comprising a contact metallization layer. part
The semiconductor assembly unit according to claim 1, wherein, in the released portion of (33), the support is brought into thermal contact and electrical contact with the support by pressure.
支持体(9)に固定された絶縁ピン(12)で取り付けられ、
モジユール板(1)と電気的に接触し、支持体に押圧され
る、請求項１記載の半導体組立ユニット。3. The current terminal element (16) is formed as a spring,
Mounted with insulating pins (12) fixed to the support (9),
2. The semiconductor assembly unit according to claim 1, which is in electrical contact with the module plate (1) and is pressed against the support.
分において半導体要素(1)と電気的に接触し、支持体を
押圧するように、押し枠(20)によって圧力が作用する、
請求項１記載の半導体組立ユニット。4. Pressure is applied by the pusher frame (20) such that the current terminal element (26) makes electrical contact with the semiconductor element (1) at the part of the contact metal layer (23) and presses the support. To work,
The semiconductor assembly unit according to claim 1.
な機能要素を有する、請求項１記載の半導体組立ユニッ
ト。5. The semiconductor assembly unit according to claim 1, wherein the module board (1) has active and passive functional elements.
て、少なくとも一方の側に取り付けられた接触金属被覆
層(33)を有する、請求項１記載の半導体組立ユニット。6. The semiconductor assembly unit according to claim 1, wherein the disk (31) made of porcelain has as a substrate (3) a contact metallization layer (33) mounted on at least one side.
側に、接触金属被覆層(32)、またはバイメタル作用によ
って支持体(9)に対して絶縁板(3)を凸形に曲げるように
作用する物質からなる少なくとも１つの同じ部分層を有
する、請求項６記載の半導体組立ユニット。7. An insulating plate (3) is provided on the side facing the support (9) toward the support (9) by a contact metal coating layer (32) or a bimetal action. 7. A semiconductor assembly unit as claimed in claim 6, characterized in that it has at least one identical sublayer of a substance which acts to bend) in a convex shape.
(32)が、銅からなる基層と、銅より高い熱膨張係数を有
する接触金属からなる被覆層とから形成されることを特
徴とする、請求項７記載の半導体組立ユニット。8. A contact metallization layer opposite the semiconductor element (1).
8. The semiconductor assembly unit according to claim 7, wherein (32) is formed of a base layer made of copper and a cover layer made of a contact metal having a higher thermal expansion coefficient than copper.
けられ、モジユール板(1)が電流端子要素(16)を介して
導電路(58)と接続され、導電路(58)がハウジングの外側
の接続点に対する通しピン(59)に通じるように形成され
る、請求項２記載の半導体組立ユニット。9. A conducting path (58) is provided inside the housing wall (5), the module plate (1) being connected to the conducting path (58) via a current terminal element (16), and the conducting path (58). 3. The semiconductor assembly unit according to claim 2, wherein said) is formed so as to communicate with a through pin (59) for a connection point on the outside of the housing.
素(1)用の押し枠(20)が、少なくとも１つの開口部(21)
を有し、この開口部(21)を通して、回路部分および電流
導体部分が延び、さらに、開口部(21)に隣接する縁部が
圧力によって電流端子要素(26)を押圧する、請求項４記
載の半導体組立ユニット。10. A push frame (20) for the semiconductor element (1) of each module plate (1) has at least one opening (21).
5. The circuit portion and the current conductor portion extend through the opening (21), and the edge adjacent to the opening (21) presses the current terminal element (26) by pressure. Semiconductor assembly unit.
(1)の電流接続要素(26)との間に、板ばね状のばね(19)
が設けられる、請求項４記載の半導体組立ユニット。11. A push frame (20) and respective module plates.
Between the current connection element (26) of (1), a leaf spring-like spring (19)
The semiconductor assembly unit according to claim 4, wherein:
板(3)に向いた側に、電気的に接続する導電路を有す
る、請求項４記載の半導体組立ユニット。12. The semiconductor assembly unit according to claim 4, wherein the pushing frame (20) has a conductive path electrically connected to the side of the module plate (1) facing the insulating plate (3).
ハウジング蓋(28)とからなり、ハウジング壁(5)の内面
が、電流端子要素(36)の端部(36c)を把握するために状
態および広がりに適した構成(55)を有する、請求項２記
載の半導体組立ユニット。13. The insulating housing comprises a housing wall (5) and a housing lid (28), the inner surface of the housing wall (5) for grasping the end (36c) of the current terminal element (36). The semiconductor assembly unit according to claim 2, having a configuration (55) suitable for the condition and spread.
(16,36)の自由な端部(16b,36b)を通すための開口部を有
し、さらに、電流端子要素のハウジング外側端部(36b)
を設けハウジング外部の導電部分に接続するため、ハウ
ジングの外側に相応して構成される、請求項１記載の半
導体組立ユニット。14. An insulative housing has an outward current terminal element.
Has an opening for passing the free end (16b, 36b) of (16, 36), and further, the housing outer end (36b) of the current terminal element.
2. The semiconductor assembly unit according to claim 1, which is configured correspondingly to the outside of the housing for providing a connection to a conductive portion outside the housing.
合、モジユール板(1)の電流端子要素(46)が、ハウジン
グ(28a)の適応して構成された場所にはまり込み、した
がって、ハウジング外側の端子接触が行われるように、
モジユール板(1)の電流端子要素(46)が構成され、絶縁
板(3)に取り付けられる、請求項１記載の半導体組立ユ
ニット。15. When assembling the components of the assembly unit, the current terminal elements (46) of the module plate (1) fit into the correspondingly configured locations of the housing (28a), and thus on the outside of the housing. So that the terminal contacts are made
2. The semiconductor assembly unit according to claim 1, wherein the current terminal element (46) of the module board (1) is constructed and attached to the insulating board (3).
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE3643288.1 | 1986-12-18 | ||
| DE19863643288 DE3643288A1 (en) | 1986-12-18 | 1986-12-18 | Semiconductor assembly |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63240056A JPS63240056A (en) | 1988-10-05 |
| JPH0644600B2 true JPH0644600B2 (en) | 1994-06-08 |
Family
ID=6316501
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62319094A Expired - Lifetime JPH0644600B2 (en) | 1986-12-18 | 1987-12-18 | Semiconductor assembly unit |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JPH0644600B2 (en) |
| DE (1) | DE3643288A1 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2013500555A (en) * | 2009-07-25 | 2013-01-07 | ツェーデニック、イノベイティブ、メタル‐ウント、クンストシュトフテヒニック、ゲゼルシャフト、ミット、ベシュレンクテル、ハフツング | Device for connecting electrical conductors to end connections of interconnected cells |
Families Citing this family (27)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3930858C2 (en) * | 1988-09-20 | 2002-01-03 | Peter H Maier | module Design |
| DE3837974A1 (en) * | 1988-11-09 | 1990-05-10 | Telefunken Electronic Gmbh | ELECTRONIC CONTROL UNIT |
| DE4009289A1 (en) * | 1990-03-22 | 1991-09-26 | Siemens Ag | ELECTRONIC INSERT FOR INSERTING INTO THE FRAME OF A CONTROL CABINET |
| GB2255676B (en) * | 1991-05-08 | 1995-09-27 | Fuji Electric Co Ltd | Metallic printed board |
| DE4131200C2 (en) * | 1991-09-19 | 1995-05-11 | Export Contor Ausenhandelsgese | Circuit arrangement |
| DE4237632A1 (en) * | 1992-11-07 | 1994-05-11 | Export Contor Ausenhandelsgese | Circuit arrangement |
| DE19523010A1 (en) * | 1995-04-25 | 1996-11-07 | Duerrwaechter E Dr Doduco | ASIC circuitry with power transistor and its energising circuit |
| DE19529237C1 (en) * | 1995-08-09 | 1996-08-29 | Semikron Elektronik Gmbh | High power semiconductor circuit device |
| DE19703329A1 (en) * | 1997-01-30 | 1998-08-06 | Asea Brown Boveri | Power semiconductor module |
| US6020750A (en) * | 1997-06-26 | 2000-02-01 | International Business Machines Corporation | Wafer test and burn-in platform using ceramic tile supports |
| DE19942770A1 (en) * | 1999-09-08 | 2001-03-15 | Ixys Semiconductor Gmbh | Power semiconductor module |
| DE10024377B4 (en) | 2000-05-17 | 2006-08-17 | Infineon Technologies Ag | Housing device and contact element to be used therein |
| DE10142614A1 (en) * | 2001-08-31 | 2003-04-03 | Siemens Ag | Power electronics unit |
| JP2004088989A (en) * | 2002-07-03 | 2004-03-18 | Auto Network Gijutsu Kenkyusho:Kk | Method for waterproofing power circuit section |
| DE112005003653B4 (en) * | 2005-08-26 | 2013-05-16 | Siemens Aktiengesellschaft | Power semiconductor module with load connection elements and connection clamping elements applied to the circuit carrier |
| DE102006006175A1 (en) | 2006-02-10 | 2007-08-23 | Ecpe Engineering Center For Power Electronics Gmbh | Power electronics assembly has surface of insulating substrate with a metal layer, which projects beyond substrate on all sides and projecting region of metal layer forms metal flange which borders insulating substrate |
| DE102006006424B4 (en) * | 2006-02-13 | 2011-11-17 | Semikron Elektronik Gmbh & Co. Kg | Arrangement with at least one power semiconductor module and a cooling component and associated manufacturing method |
| DE102006037159B4 (en) * | 2006-08-02 | 2012-03-29 | Oechsler Ag | Component carrier and method of manufacturing an electrical assembly by wiring its components |
| JP2008227131A (en) * | 2007-03-13 | 2008-09-25 | Renesas Technology Corp | Semiconductor device and its manufacturing method |
| CN101681907B (en) * | 2007-11-30 | 2012-11-07 | 松下电器产业株式会社 | Heat dissipating structure base board, module using heat dissipating structure base board, and method for manufacturing heat dissipating structure base board |
| JP4798170B2 (en) * | 2008-05-13 | 2011-10-19 | 株式会社豊田自動織機 | Semiconductor device |
| DE102009002191B4 (en) | 2009-04-03 | 2012-07-12 | Infineon Technologies Ag | Power semiconductor module, power semiconductor module assembly, and method of making a power semiconductor module assembly |
| DE102010010926A1 (en) * | 2010-03-10 | 2011-09-15 | Knorr-Bremse Systeme für Nutzfahrzeuge GmbH | Connecting device for connecting an electronic component with a housing part and electronic control unit |
| JP5939041B2 (en) * | 2012-06-01 | 2016-06-22 | 住友電気工業株式会社 | Semiconductor module and method for manufacturing semiconductor module |
| DE102014225270A1 (en) * | 2014-12-09 | 2016-06-09 | Gebr. Schmid Gmbh | Contact frame for electrochemical substrate coating |
| DE112016007485T5 (en) * | 2016-11-29 | 2019-08-22 | Mitsubishi Electric Corporation | Semiconductor device, control device, and method of manufacturing the semiconductor device |
| JP7110599B2 (en) * | 2018-01-17 | 2022-08-02 | 沖電気工業株式会社 | Electronics |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3005313C2 (en) * | 1980-02-13 | 1986-05-28 | SEMIKRON Gesellschaft für Gleichrichterbau u. Elektronik mbH, 8500 Nürnberg | Semiconductor device |
| DE3232184A1 (en) * | 1982-08-30 | 1984-03-01 | Siemens AG, 1000 Berlin und 8000 München | Power semiconductor element |
| JPS5968958A (en) * | 1982-10-12 | 1984-04-19 | Mitsubishi Electric Corp | Gate turn-off thyristor assembled body |
| DE3426291A1 (en) * | 1984-07-17 | 1986-01-30 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Semiconductor device |
| DE3508456A1 (en) * | 1985-03-09 | 1986-09-11 | Brown, Boveri & Cie Ag, 6800 Mannheim | Power semiconductor module |
| JPS61218151A (en) * | 1985-03-23 | 1986-09-27 | Hitachi Ltd | Semiconductor device |
-
1986
- 1986-12-18 DE DE19863643288 patent/DE3643288A1/en active Granted
-
1987
- 1987-12-18 JP JP62319094A patent/JPH0644600B2/en not_active Expired - Lifetime
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2013500555A (en) * | 2009-07-25 | 2013-01-07 | ツェーデニック、イノベイティブ、メタル‐ウント、クンストシュトフテヒニック、ゲゼルシャフト、ミット、ベシュレンクテル、ハフツング | Device for connecting electrical conductors to end connections of interconnected cells |
Also Published As
| Publication number | Publication date |
|---|---|
| DE3643288C2 (en) | 1993-04-22 |
| JPS63240056A (en) | 1988-10-05 |
| DE3643288A1 (en) | 1988-06-30 |
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