JPS6037756A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS6037756A
JPS6037756A JP14749583A JP14749583A JPS6037756A JP S6037756 A JPS6037756 A JP S6037756A JP 14749583 A JP14749583 A JP 14749583A JP 14749583 A JP14749583 A JP 14749583A JP S6037756 A JPS6037756 A JP S6037756A
Authority
JP
Japan
Prior art keywords
cooling
semiconductor
semiconductor chip
module
liquid
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14749583A
Other languages
Japanese (ja)
Inventor
Shin Nakao
中尾 伸
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP14749583A priority Critical patent/JPS6037756A/en
Publication of JPS6037756A publication Critical patent/JPS6037756A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/34Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/46Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids
    • H01L23/473Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids by flowing liquids
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/34Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/42Fillings or auxiliary members in containers or encapsulations selected or arranged to facilitate heating or cooling
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161Disposition
    • H01L2224/16151Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Abstract

PURPOSE:To obtain the titled device of excellent cooling effect by a method wherein a cooling liquid flowing through a cooling device which hermetically seals a semiconductor module is brought into direct contact with the backs of semiconductor chips, and the upper surface of module other than those is covered with a member not passing the cooling liquid. CONSTITUTION:Semiconductor chips 3 are bonded on a module substrate 4, and a thermosetting resin 8 is uniformly applied thin on the back surfaces of the chips 3. After the resin is hardened, the joint of the substrate 4 with the cooling device 7 and the sections of backs of the chips are selectively removed. Next, passing the cooling liquid 6 under the junction of the device 7 enables to prevent the characteristic deterioration due to the liquid and then to obain excellent cooling effect.

Description

【発明の詳細な説明】 〔発明の技術分野〕 この発明は半導体装置に係り、特にフリツプチモジュー
ル形式の半導体装置の半導体チップからの熱を効率よく
外部へ放散させる冷却構造に関するものである。
DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] The present invention relates to a semiconductor device, and more particularly to a cooling structure for efficiently dissipating heat from a semiconductor chip of a flip module type semiconductor device to the outside.

〔従来技術〕[Prior art]

第1図は従来装置の構造を示す断面図で、+1+は冷却
用液体の流路を有するとともにモジュールを気密封止す
る冷却装置、(2)は半導体チップ(3)の背面に接触
し、半導体チップ(3)で発生ずる熱を冷却装置[1)
に伝える接触子、(4)はモジュールの基板、(5)は
入出力ビン、(5)は冷却装置(1)に設けられた流路
を流れる冷却用液体である。
Figure 1 is a cross-sectional view showing the structure of a conventional device. Cooling device [1] cools the heat generated by the chip (3)
(4) is the module substrate, (5) is the input/output bin, and (5) is the cooling liquid flowing through the flow path provided in the cooling device (1).

冷却装置+11はアルミニウム等の熱伝導性のよい金属
で構成されており、これに接触子(2)が熱抵抗が小さ
くなるような状態で接合されている。そして、この接触
子(2)を半導体チップ(3)に接触させるように冷却
装置(1)をモジュール基板tl)に接合させてモジュ
ール全体を気密に封止L5ている。ここで、接触子(2
)は半導体チップ(3)と接触するのみにとどめ、半導
体チップ(3)に過大な機械的な力が加わらブv17)
士 らに 1.てしN R−半導体チップ(3)で発生
した熱は、主としてチップ背面から接触子(2)を介し
て冷却装置(1)に伝わり、冷却装置(1)内を流れる
液体(6)によってモジュール外部に運ばれ、熱交換器
(図示せず)などによって放散される。
The cooling device +11 is made of a metal with good thermal conductivity, such as aluminum, and the contact (2) is bonded to it in such a manner that the thermal resistance is reduced. Then, the cooling device (1) is joined to the module substrate tl) so that the contactor (2) is brought into contact with the semiconductor chip (3), and the entire module is hermetically sealed L5. Here, the contact (2
) should only make contact with the semiconductor chip (3), and avoid applying excessive mechanical force to the semiconductor chip (3).
Shi et al. 1. The heat generated in the semiconductor chip (3) is mainly transferred from the back of the chip to the cooling device (1) via the contacts (2), and the liquid (6) flowing inside the cooling device (1) cools the module. It is carried outside and dissipated by a heat exchanger (not shown) or the like.

以上のように従来の半導体装置の構成では、冷却装置+
1)からその内部を流れる液体(6)への熱伝達は極め
て効率よく行なわれるか、接触子(2)と半導体チップ
(3)との間の接触熱抵抗が太きく、寸だ、接触子(2
)と冷却装置f11との接合方法によっては、この間に
も大きな接触熱抵抗が生じるので、半導体チップ(3)
で発生する熱を効率よく冷却装fat mへ伝えられな
いという欠点があった。
As mentioned above, in the configuration of conventional semiconductor devices, cooling device +
Is heat transfer from 1) to the liquid (6) flowing inside it extremely efficient?The contact thermal resistance between the contact (2) and the semiconductor chip (3) is large, and the contact (2
) and the cooling device f11, a large contact thermal resistance may occur between them, so the semiconductor chip (3)
There was a drawback that the heat generated in the FAT could not be efficiently transferred to the cooling device.

〔発明の植装〕[Invention planting]

この発明は以上のような点に鑑みてなされたもので、従
来装置における接触子を除去して、冷却装置を流れる液
体を直接半導体チップの背面に接触させるようにするこ
とによって、冷却効果の大きい半導体装置を提供するも
のである。
This invention was made in view of the above-mentioned points, and by removing the contacts in the conventional device and bringing the liquid flowing through the cooling device into direct contact with the back surface of the semiconductor chip, a large cooling effect can be achieved. The present invention provides a semiconductor device.

〔発明の実施例〕[Embodiments of the invention]

第2図はこの発明の一実施例の構造を示す断面図で、第
1図の従来例と同一符号は同等部分を示し、その説明は
省略する。(7)はこの実施例に用いる冷却装置で、モ
ジュールを気密封止するとともに、冷却装置FN7)を
流れる液体(6)が半導体テップ(3)に触れるように
構成されている。(8)は液体(6)が透過しないよう
な部材で、半導体チップ(3)の背面部分を除くすべて
のモジュール基板面をおおっているO このような構成にすることによって、冷却用液体(6)
が直接半導体チップ(3)の背面に接触するのですぐれ
た冷却効果が得られる。
FIG. 2 is a cross-sectional view showing the structure of an embodiment of the present invention, in which the same reference numerals as in the conventional example of FIG. 1 indicate equivalent parts, and the explanation thereof will be omitted. (7) is a cooling device used in this embodiment, which hermetically seals the module and is configured so that the liquid (6) flowing through the cooling device FN7) comes into contact with the semiconductor tip (3). (8) is a member that does not allow the liquid (6) to pass through, and covers all the module board surfaces except for the back surface of the semiconductor chip (3). )
Since it comes into direct contact with the back surface of the semiconductor chip (3), an excellent cooling effect can be obtained.

第3図および第4図はこの液体(6)が透過しない部材
(8)の装着方法を説明する裏部断面図で、捷す、第3
図のようにモジュール基板f4)lに半導体チップ(3
)をボンディングし、その上に液体(6)か透過しない
部材(8)として例えば熱硬化性樹脂をスピンコードな
どによって一様にコーティングし、必侠ならは重ね塗り
をしてチップ(3)の背面か薄くおおわれるような膜厚
にする。
Figures 3 and 4 are back sectional views illustrating how to attach the member (8) that does not allow the liquid (6) to pass through.
As shown in the figure, the semiconductor chip (3) is mounted on the module board f4)l.
), then coat the liquid (6) or a thermosetting resin as an impermeable material (8) uniformly with a spin cord or the like, and if you are a skilled person, apply multiple coats to form the chip (3). Make the film thick enough to cover the back surface.

次に樹脂をキュアして硬化させた後、写真製版、エツチ
ングによって、第4図に示すように、冷却装置(7)の
基板(4)への接合部分および半導体チップ(3)の背
面をおおっている樹脂を除去する。
Next, after curing and hardening the resin, as shown in FIG. Remove the remaining resin.

なお、この発明はモジュール内の半導体チップの数、冷
却装置の形状など、その実施形態は上記実施例に限定さ
れるものではない。
Note that the present invention is not limited to the number of semiconductor chips in the module, the shape of the cooling device, etc., and the embodiments described above.

〔発明の効果〕〔Effect of the invention〕

以上説明したように、この発明になる半傅体装置では、
半導体モジュールを気密に封止する冷却装置内を流れる
冷却用液体を直接半導体チップの背面に接触させるとと
もに、それ以外のモジュール上面は冷却用液体を透過し
ない部材でおおったので、液体による劣化を防止しつつ
、良好な冷却効果が得られる。
As explained above, in the half-body device of this invention,
The cooling liquid that flows through the cooling device that hermetically seals the semiconductor module comes into direct contact with the back of the semiconductor chip, and the rest of the top surface of the module is covered with a material that does not allow the cooling liquid to pass through, thus preventing deterioration due to the liquid. At the same time, a good cooling effect can be obtained.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は従来装置の構造を示す断面図、第2図はこの発
明の一実施例の構造を示す断面図、第3図および第4図
はこの実施例における液体の透過1t「い文に廿の奨碧
方法を説明する甥部断面図であるO 図において、(3)は半導体チップ、(4)は基板、(
6)は冷却用液体、(7)は冷却装置、(8)は熱硬化
性St脂(冷却用液体を透過しない部拐)である。 なお、図中同一符号は同−捷たけ和尚部分を示す。 代理人 大 岩 増 雄 第1図 2 第2図 第33図 第4−図 丁、続袖正書(自発) 特1;′I庁長゛+’、1i没 1 事イ′1の表示 1贋「l昭58−147495号
2発明の名称 半導体装置 ;3 補止4−4る者 事1′1との関係 1・1許出19(1人住 所 東京
都七代1.11区丸の内−丁1′12番33g名 称 
(60’l)ぐ菱電機株式会社代表者片Ill仁八部 4代理人 住 所 東京都千代11.1置火の内二丁142−a 
、’3 シJ5、 補正の対象 明細書の発明の詳細な説明の梱 6、 補正の内容 −ベ
Fig. 1 is a sectional view showing the structure of a conventional device, Fig. 2 is a sectional view showing the structure of an embodiment of the present invention, and Figs. In Figure 0, which is a cross-sectional view of a part explaining the method of promotion, (3) is a semiconductor chip, (4) is a substrate, (
6) is a cooling liquid, (7) is a cooling device, and (8) is a thermosetting St resin (a material that does not permeate the cooling liquid). Note that the same reference numerals in the figures indicate the same parts. Agent: Masuo Oiwa Figure 1 Figure 2 Figure 2 Figure 33 Figure 4-Double-cut, continuous manuscript (spontaneous) Special feature 1; 'I Director +', 1i-d1 Indication of ``1'' 1 Counterfeit No. 58-147495 2 Name of the invention Semiconductor device; 3 Supplement 4-4 Relationship with 1'1 1.1 Permission 19 (1 person Address: Marunouchi, 1.11 Ward, Seventh Generation, Tokyo) -Ding 1'12 No. 33g Name
(60'l) Guryo Electric Co., Ltd. Representative Kata Ill Jin Hachibu 4 Agent Address 2-142-a Okibi-no-uchi, 11.1 Chiyo, Tokyo
, '3 CJ5, Detailed explanation of the invention in the specification subject to amendment 6, Contents of amendment - Base

Claims (1)

【特許請求の範囲】 fi+ 半導体チップが装着された基板上に上記半導体
チップを気密に封止するとともに内部に冷却用液体を通
ずる流通路を有する放熱装置を備えたものにおいて、上
記半導体チップの上記基体への装着面とは反対側の背面
の少なくとも一部を上記冷却用液体に触れるようにした
ことを特徴とする半導体装置。 (2)半導体チップが装着され冷却装置で気密に制止さ
れた基体の面の上記半導体チップの背面の冷却用液体に
触れる部分を除く全面を上記冷却用液体を透過しない部
材でおおったことを特徴とする特許請求の範囲第1項記
載の半導体装置。
[Scope of Claims] fi+ A heat dissipation device that airtightly seals the semiconductor chip on a substrate on which the semiconductor chip is mounted and has a flow path for passing a cooling liquid therein, wherein A semiconductor device characterized in that at least a part of the back surface on the opposite side from the surface on which the semiconductor device is attached to the base body is brought into contact with the cooling liquid. (2) The entire surface of the base on which the semiconductor chip is mounted and airtightly restrained by a cooling device is covered with a member that does not allow the cooling liquid to pass through, except for the part that comes into contact with the cooling liquid on the back of the semiconductor chip. A semiconductor device according to claim 1.
JP14749583A 1983-08-10 1983-08-10 Semiconductor device Pending JPS6037756A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14749583A JPS6037756A (en) 1983-08-10 1983-08-10 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14749583A JPS6037756A (en) 1983-08-10 1983-08-10 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS6037756A true JPS6037756A (en) 1985-02-27

Family

ID=15431674

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14749583A Pending JPS6037756A (en) 1983-08-10 1983-08-10 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS6037756A (en)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5413965A (en) * 1993-09-13 1995-05-09 Motorola, Inc. Method of making microelectronic device package containing a liquid
US6765285B2 (en) 2002-09-26 2004-07-20 Mitsubishi Denki Kabushiki Kaisha Power semiconductor device with high radiating efficiency
US7400502B2 (en) * 2005-12-29 2008-07-15 Qnx Cooling Systems Inc. Connector heat transfer unit
JP2010129582A (en) * 2008-11-25 2010-06-10 Yaskawa Electric Corp Electronic apparatus, and method of manufacturing electronic apparatus
US7876561B2 (en) 2007-01-22 2011-01-25 Johnson Controls Technology Company Cooling systems for variable speed drives and inductors
US7957166B2 (en) 2007-10-30 2011-06-07 Johnson Controls Technology Company Variable speed drive
US8149579B2 (en) 2008-03-28 2012-04-03 Johnson Controls Technology Company Cooling member
US8495890B2 (en) 2007-01-22 2013-07-30 Johnson Controls Technology Company Cooling member

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58437B2 (en) * 1976-03-26 1983-01-06 三共株式会社 Fused triazolopyrimidine derivatives

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58437B2 (en) * 1976-03-26 1983-01-06 三共株式会社 Fused triazolopyrimidine derivatives

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5413965A (en) * 1993-09-13 1995-05-09 Motorola, Inc. Method of making microelectronic device package containing a liquid
US6765285B2 (en) 2002-09-26 2004-07-20 Mitsubishi Denki Kabushiki Kaisha Power semiconductor device with high radiating efficiency
US7400502B2 (en) * 2005-12-29 2008-07-15 Qnx Cooling Systems Inc. Connector heat transfer unit
US7876561B2 (en) 2007-01-22 2011-01-25 Johnson Controls Technology Company Cooling systems for variable speed drives and inductors
US8495890B2 (en) 2007-01-22 2013-07-30 Johnson Controls Technology Company Cooling member
US7957166B2 (en) 2007-10-30 2011-06-07 Johnson Controls Technology Company Variable speed drive
US8149579B2 (en) 2008-03-28 2012-04-03 Johnson Controls Technology Company Cooling member
JP2010129582A (en) * 2008-11-25 2010-06-10 Yaskawa Electric Corp Electronic apparatus, and method of manufacturing electronic apparatus

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