JPS60125745U - semiconductor unit - Google Patents

semiconductor unit

Info

Publication number
JPS60125745U
JPS60125745U JP1430484U JP1430484U JPS60125745U JP S60125745 U JPS60125745 U JP S60125745U JP 1430484 U JP1430484 U JP 1430484U JP 1430484 U JP1430484 U JP 1430484U JP S60125745 U JPS60125745 U JP S60125745U
Authority
JP
Japan
Prior art keywords
semiconductor
semiconductor unit
lead
switching element
heat
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1430484U
Other languages
Japanese (ja)
Inventor
油谷 隆司
健明 朝枝
Original Assignee
三菱電機株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 三菱電機株式会社 filed Critical 三菱電機株式会社
Priority to JP1430484U priority Critical patent/JPS60125745U/en
Publication of JPS60125745U publication Critical patent/JPS60125745U/en
Pending legal-status Critical Current

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Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。
(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

【図面の簡単な説明】[Brief explanation of drawings]

第1図は従来の半導体ユニットを実装構造を示す側面図
、第2図aは本考案の一実施例の実装構造の側面図、第
2図すは放熱体の平面図である。 図において、1・・・GTo、 2. 3・・・放熱体
、3B・・・リード孔、4・・・スナバダイオード、4
a、4b・・・リード、5・・・放熱体、6・・・スナ
バコンデンサ。
FIG. 1 is a side view showing a conventional semiconductor unit mounting structure, FIG. 2a is a side view of a mounting structure according to an embodiment of the present invention, and FIG. 2 is a plan view of a heat sink. In the figure, 1...GTo, 2. 3... Heat sink, 3B... Lead hole, 4... Snubber diode, 4
a, 4b... Lead, 5... Heat sink, 6... Snubber capacitor.

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] 半導体スイッチング素子、該半導体スイッチング素子を
はさむ一対の放熱体、該放熱体の一方と第3の他の放熱
体とiこはざまれだスナバダイオードからなる半導体ス
タックとスナバコンデンサを具える半導体ユニットにお
いて、上記一方の放熱体の各フィン基部にほぼ同一線上
に並ぶリード孔を形成しスナバコンデンサの一方リード
を上記リード孔を順次通して配線することを特徴とする
半導体ユニット。
A semiconductor unit comprising a semiconductor switching element, a pair of heat radiators sandwiching the semiconductor switching element, a semiconductor stack consisting of a snubber diode sandwiched between one of the heat radiators and a third other heat radiator, and a snubber capacitor, A semiconductor unit characterized in that lead holes arranged substantially on the same line are formed in each fin base of the one heat radiator, and one lead of the snubber capacitor is wired sequentially through the lead holes.
JP1430484U 1984-02-02 1984-02-02 semiconductor unit Pending JPS60125745U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1430484U JPS60125745U (en) 1984-02-02 1984-02-02 semiconductor unit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1430484U JPS60125745U (en) 1984-02-02 1984-02-02 semiconductor unit

Publications (1)

Publication Number Publication Date
JPS60125745U true JPS60125745U (en) 1985-08-24

Family

ID=30499101

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1430484U Pending JPS60125745U (en) 1984-02-02 1984-02-02 semiconductor unit

Country Status (1)

Country Link
JP (1) JPS60125745U (en)

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