JPS60124926A - Device for vapor deposition of thin film - Google Patents

Abstract

PURPOSE:To simplify a structure, to reduce the electric power and to obtain the compound thin film of uniform thickness and quality in a cluster ion beam vapor deposition device by jetting out a substance of normal temperature gas from a gas container to bombard it to a substrate so as to produce cluster. CONSTITUTION:Through a bottom plate of a vacuum tank 1 having an exhaust path 2 on a bottom surface, a gas introducing pipe communicating with gas containers 32a and 32b arranged outside the tank penetrates and a gas container 30 having a nozzle 30a on its top is connected to the end of said gas introducing pipe. Also gas supply control valves 33a and 33b are arranged between the containers 32a and 32b and the container 30, and a cooling pipe 34 for controlling size of cluster generated from a container 31 is wound around a periphery of the container 31. The ionizing means 12 composed of ionizing filaments 9, thermion attracting electrodes 10 and heat shielding plates 11 are arranged above the nozzle 30a and a substrate supported by an insulating support member 21 is arranged facing each other above said ionizing means. Thus SiH4 and O2 of normal temperature are sent into the container 30 where these are mixed and clusterions 15 and 16 are jetted out toward the substrate 18.

Description

DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] The present invention relates to a thin film deposition apparatus, and more particularly to an apparatus for forming a compound thin film by vapor deposition using a cluster ion beam deposition method.

[Prior art]

Conventional methods for forming thin films of this type include vacuum evaporation, sputtering, CVD, ion blating, and cluster ion beam evaporation, but methods using ionized particles or excited particles are particularly effective in forming high-quality thin films. The cluster ion beam evaporation method has a number of excellent features, so it has a wide range of applications as a method for forming high-quality thin films.

This method of forming a thin film using cluster ion beam evaporation involves ejecting vapor of a substance to be deposited onto a substrate in a vacuum chamber to generate clusters (massive atomic groups) in which many atoms in the vapor are loosely bonded. 4. Shower the cluster with electrons to form the cluster pot. An insulating support member 20 supports the bombardment filament 6 and the heat shield plate 7, and 20 is a support stand that supports the crucible 4.

heat seam electrode 1 that blocks radiant heat from the chemical filament 9
0 and a potential of up to IQkV can be applied. Note that 24 is an insulating support member that supports the accelerating electrode i14, 22 is a substrate holder that supports the substrate 18, and 2I is the substrate boulder 2.
2, an insulating support member 17 supports cluster ion 1;
6 and a neutral cluster 15.

Next, the operation will be explained.

First, the metal 5 to be vapor-deposited is filled into the crucible 4, and the air in the vacuum chamber 1 is evacuated using the vacuum exhaust device described in the following.
Create a specified degree of vacuum inside.

Next, the bombardment filament 6 is energized to generate f4.
Due to the pressure difference between the bombardment filament 6 and the vacuum chamber I, the bombardment filament 6 thermally expands and becomes a mass of atoms, called a cluster, in which many atoms are loosely bonded.

This cluster-shaped cluster beam 17 collides with the hot electrons 13 extracted from the ionization filament 9 by the electron extraction electrode 10, and therefore, some of the clusters of the cluster beam 17 have one atom ionized. Since the vapor deposition material 5 filled in the cluster is heated to obtain its heat, there is a drawback that thermal efficiency is poor and a very large amount of electric power is required to operate the device. Further, as the vapor deposition material 5, a material that requires high temperature for vaporization, such as tungsten (W) is used.
, tantalum (Ta), molybdenum (Mo), titanium (Ti), carbon (C), etc., and when using highly reactive substances such as silicon (St), special materials are required for the crucible 4. There were disadvantages such as the need to use

[Summary of the invention]

This invention was made in order to eliminate the drawbacks of the conventional ones as described above, and in a cluster ion beam evaporation apparatus, a room temperature gas substance is ejected from a gas storage part to generate clusters. , the structure is simple, the power required for operation can be significantly reduced, and thin films of highly reactive substances can be easily formed. Thin film deposition that can easily form a high-quality compound thin film with uniform thickness and quality by mixing and storing gaseous substances and ejecting them from the gas storage part to generate clusters. The purpose is to provide equipment.

[Embodiments of the invention]

Embodiments of the present invention will be described below with reference to the drawings.

FIG. 3 is a schematic diagram showing a thin film deposition apparatus according to an embodiment of the present invention. In the figure, the same symbols as in Figure 1 are the same.
32a and 32b are the first cylinders 32a and 32b each containing a room-temperature gas substance having different vapor deposition substance atoms. A second gas container 30 is provided in the vacuum chamber 1 and is a gas storage part having a nozzle 3 (la) at its head, which is supplied from the first and second gas containers 32a and 32b. Each room temperature gas substance is mixed and contained, and each room temperature gas substance is ejected from its nozzle 30a to generate a cluster of each room temperature gas substance.33a and 33b are each of the above room temperature gas substances. is a valve (gas supply amount control means) for controlling the amount of gas supplied to the gas storage section 30. Also, 34 is a cooling pipe disposed around the gas storage section 30; The size of the cluster generated from the gas containing part 30 by cooling the gas containing part 30, i.e. 1161 molecules or atoms constituting 1'/Norask.
This is to control the numbers. Note that 39 is an insulating support 91 that supports the ionization T stage I2 and the acceleration electrode 14.

Next, the operation will be explained.

In the fourth embodiment, a case will be described in which a compound thin film of silicon diMide (Si02) is formed by vapor deposition using silane gas (SiH4) and oxygen (02) as room-temperature gas substances.

1', vacuum the inside of the empty tank I to 10 T.

Evacuate to a vacuum level of rr (approximately 10 to 10 Torr). Then, in the gas storage section 30, the first. When silane gas and oxygen are supplied from the second gas containers 32a and 32b and are ejected from the nozzle 30a in a state where the silane gas and oxygen are mixed at a predetermined ratio, the silane gas and oxygen II ejected from the nozzle 30a, respectively. It becomes a cluster of molecules and a cluster of oxygen atoms. , -, the amount of each gas introduced into the gas storage section 30 is equal to the amount of each valve 33a.
, 33b. Furthermore, by controlling the temperature of the gas storage section 30 using the cooling pipe 34, the size of each cluster is controlled.

Next, when the clusters of silane molecules and the clusters of oxygen atoms are bombarded with electrons from the ionized filament 9, the clusters of silane molecules are
) Hydrogen (H2) is separated from silicon (St) molecules.
), and at the same time, one atom of the cluster of silicon atoms is ionized by the electron bombardment and becomes a cluster ion 16a of silicon atoms. On the other hand, the cluster of oxygen atoms is ionized by the electron impact and becomes a cluster ion 16b of oxygen atoms.

Each cluster ion 16a, 16b is moderately accelerated by the electric field formed between the accelerating electrode 14 and the electron extraction electrode 10, and the neutral cluster ions 16a, 16b are
5a and 15b are directed to the substrate 18 with the kinetic energy ejected from the respective gas storage portions 30a and 30b.
In other words, the silicon atom cluster ion 16a.

Neutral cluster 15a and oxygen atom cluster ion 1
6b, the neutral cluster 15b collides with the substrate 18 1
1J in the vicinity of the substrate 18 to form silicon dioxide (Si
O2), thereby forming a silicon dioxide compound thin film on the substrate 18 by vapor deposition. Note that the hydrogen gas separated and generated from the clusters of silane molecules in item 1 is exhausted to the outside of the vacuum chamber 1.

In the device of this embodiment, clusters are generated using a room-temperature gas compound, so there is no need for a heating mechanism like in conventional devices, and the structure of the device can be simplified.
In addition, the power required for operation can be significantly reduced, and thin films of substances that require high temperatures to vaporize or of highly reactive substances can be easily formed.

Furthermore, room-temperature gas substances having different vapor deposition substance atoms are mixed in a predetermined proportion in the gas storage part 30 and are ejected, so that the substrate 18
The thickness and quality of the compound thin film formed on the top can be made uniform,
High quality compound thin films can be formed very easily.

Although the above embodiment describes the case where a silicon dioxide thin film is formed using silane gas and oxygen, the present invention is not limited to this. For example, diborane (B2
Formation of various compound thin films in the same manner as in the above examples using an appropriate room-temperature gas substance, such as forming boron nitride (BN) using H5) and nitrogen (N2) or ammonia (NH3). becomes possible.

Further, in the above embodiment, a case was explained in which two gas containers were provided, but the present invention is not limited to this. For example, three gas containers may be provided, and each container contains aluminum chloride (Aβ2Cj23), carbon dioxide, etc. Carbon (CO2), oxygen (
02) and use these to prepare alumina (A/2)
03) It is also possible to form a KM.

〔Effect of the invention〕

As described above, according to the present invention, in the class quion beam seeding device, the room-temperature gas substance is ejected from the gas storage part to generate clusters, so the structure is simple and the operation is easy. Not only can the required power be significantly reduced, but also ``?tB9'' made of highly reactive substances can be easily formed, and moreover, a plurality of ``+'fs? ? The effect of making it possible to easily form a high-quality compound thin film with uniform film thickness and film quality, since the a-gas substances are mixed and contained and the waste is ejected from the gas storage part to generate clusters. There is.

[Brief explanation of drawings]

FIG. 1 is a schematic diagram of a conventional thin film deposition apparatus, FIG. 2 is a perspective view showing the inside of the vacuum chamber, and FIG. 3 is a schematic diagram of a VN vapor deposition apparatus according to an embodiment of the present invention. . 1...1゛Empty tank, 12...Ionization means, 14.
... Acceleration 7b pole (1st acceleration stage>, 15a, 15b... Neutral cluster, I [ia, l fi b... Cluster ion, 18... Substrate, 30... Gas storage part with nostle , 32a, 32b... gas container, 33a, 3
3 b...Valve (gas supply amount control means)). Note that the same reference numerals in the figures indicate the same or equivalent parts. Agent Masuo Oiwa Figure 1 Figure 2

Claims (1)

[Claims] (11) A thin film deposition apparatus for forming a compound thin film on a substrate by vapor deposition includes a vacuum chamber maintained at a predetermined degree of vacuum, and a plurality of gas containers each containing a room-temperature gas substance containing atoms of the substance to be vapor-deposited on the substrate. , a gas storage section with a nozzle provided in the vacuum chamber and configured to mix and store the room-temperature gas substances from the plurality of gas containers and eject them to generate cluster ions of the temperature-temperature gas substances; a plurality of gas supply amount control means for controlling the supply amount of each of the room-temperature gas substances to the gas storage section; and a plurality of gas supply amount control means for controlling the supply amount of each of the room-temperature gas substances to the gas storage section; an ionization means for forming cluster ions of the ionized cluster ions of each vapor-deposited substance;
A thin film deposition apparatus comprising an acceleration means for accelerating ions and causing them to collide with the substrate together with non-ionized neutral clusters to deposit a compound thin film.