JPS6270566A - Apparatus for vapor depositing film - Google Patents

Abstract

PURPOSE:To uniformly hold temp. of the whole crucible and to carry out stable vapor deposition, by providing plural heating filaments around circumference of a crucible, and independently controlling the temp. of each filament. CONSTITUTION:The heating filaments 6 are arranged on circumferences of a crucible main body 4b, a nozzle part 4c, a supporting part 4d of the crucible 4 respectively, and temps. of respective filaments 6 are independently controlled. Temp. of each filament 6 arranged on circumferences of the parts 4c and 4d is held higher, inversely, temp. of the filament 6 arranged at circumference of the body 4b is held lower. In this way, radiation heat and released electron quantity to the crucible 4 from each filament 6 are controlled to equalize temps. of the whole crucible 4. By the mechanism, zinc film, etc., can stably be vapor deposited and formed on a substrate 18.

Description

DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a thin film deposition apparatus, and particularly to stabilization of the deposition rate when forming a thin film by t-evaporation using a cluster ion beam deposition method.

[Prior Art] Generally, in a thin film deposition apparatus using cluster ion beam deposition, a crucible is filled with a deposition material to be deposited onto a substrate in a vacuum chamber, and a heating filament is placed around the crucible. The substance in the crucible is heated by the radiant heat of the radiant heat and the electrons emitted from the filament, and the vapor of the substance is ejected from the small holes of the crucible V to create a lumpy atomic group in which many atoms in the vapor are loosely bonded. (hereinafter referred to as a cluster), and send electricity to the cluster! The clusters are showered into cluster ions in which one atom is ionized, and the cluster ions are accelerated to collide with the substrate along with the non-ionized neutral clusters, thereby causing the clusters to ionize into the substrate. A film is formed by vapor deposition.

As such a thin film deposition apparatus, conventionally, the
There was something shown in the figure. FIG. 2 is a schematic configuration diagram schematically showing a conventional thin film deposition apparatus, and FIG. 3 is a perspective view showing the inside with a part of the main part thereof cut away. In the figure, (1
) is a chamber maintained at a predetermined degree of vacuum, and (2) is an exhaust passage for exhausting the inside of the vacuum chamber (1).
is connected to a vacuum evacuation device (not shown). (3)
t/i is a vacuum pulp that opens and closes the exhaust passage (2).

(4) d! A closed crucible equipped with a nozzle (4a) with a diameter of 1 ff to 2 mm, in which the evaporated substance to be deposited on the substrate, for example zinc (Zn) (5), is accommodated. (6
) I/i A heating filament that irradiates the crucible (4) with thermoelectrons to heat it; (7) is a heat shield plate that blocks the radiant heat from the filament (6); ), a heating filament (6) and a heat shield plate (forming a steam generation source (8) that uses force to eject the vapor of the substance to be deposited onto the substrate into the vacuum chamber (1) to generate clusters). Note that (19) is an insulating support member that supports the heat shield plate (7), and (2)
0) is a support stand that supports the crucible (4).

(9) is an ionizing filament that emits thermal electrons (13) for ionization when heated to 2000°C or more, (10)
is an electron extraction electrode that accelerates the thermoelectrons (13) emitted from the ionized filament (9), and (11) is a heat shield plate that blocks radiant heat from the ionized filament (9); 9),
The electron extraction electrode (lO) and the heat shield plate (11) form an ionization means (12) for ionizing the clusters from the vapor generation source (8).

Note that (23) is an insulating support member that supports the heat shield & (11).

(14) riThe above ionized cluster ions (1
The electron extraction electrode (10
) A potential of up to 10 kV can be applied between the In addition, (24) is an insulating support member that supports the accelerating electrode (14), (22) is a substrate holder that supports the substrate (18), and (2) is a substrate holder that supports the substrate (18).
1) is an insulating support member that supports the substrate holder (22);
(17) is a cluster beam consisting of cluster ions (16) and neutral clusters (15).

Next, the operation will be explained.

To explain the case where a zinc thin film is deposited on a substrate (18), zinc (5) is filled into a crucible (4),
The nitrogen gas in the vacuum chamber (1) is evacuated by the vacuum evacuation device to bring the inside of the vacuum chamber (1) to a degree of vacuum of about 10' Torr.

Next, the heating filament (6) is energized to generate heat, and the radiant heat from the heating filament (6) causes
or by colliding thermionic electrons emitted from the filament (6) with the crucible (4), that is, by electron bombardment;
The zinc (5) in the crucible (4) is heated and evaporated.

The vapor pressure of zinc (5) in the crucible (4) is 0.1.
When the humidity is raised to a temperature of approximately 1 OTorr (500°C), the metal vapor ejected from the nozzle (4a) is cut off by the pressure difference between the crucible (4) and the nitrogen tank (1). ! 11
It expands to form a mass of atoms, called a cluster, in which many atoms are loosely bonded.

This cluster beam (17) collides with thermionic electrons (13) extracted from the ionized filament (9) by the electron extraction @pole (10).

One atom of some of the clusters is ionized and becomes a cluster ion (16). This cluster ion (16) /i is moderately accelerated by the electric field formed between the accelerated electric charge i (14) and the electron extraction electric potential ti (lo), and the neutral cluster (1
5) collides with the substrate (18) with the kinetic energy when it is injected from the crucible (4), and the substrate (18)
8) K collision, which causes a thin zinc film to be deposited on the nucleus crystal & (18) l.

[Problem that the invention seeks to solve]

In conventional thin film deposition equipment, only one heating filament is provided, and the temperature of the heating filament is kept almost uniform in all parts, so the amount of radiant heat and number electrons from each part of the filament is reduced. is uniform, so
It is said that the temperature of the parts of the crucible that are not surrounded by the filament, such as the steam jetting nozzle part and the crucible support part, is relatively low, resulting in a decrease in the amount of steam jetted out and clogging of the nozzle with evaporated substances, making it difficult to perform stable deposition. There was a problem.

This invention was made in order to solve the above-mentioned problems, and provides a thin film deposition apparatus that can maintain a uniform temperature throughout the crucible, keep the amount of steam ejected constant, and perform stable deposition. and the purpose.

(Short Means for Solving the Problems) The thin film deposition apparatus according to the present invention includes a plurality of heating filaments, and the temperature of each filament is controlled independently.

[Effect]

In this invention? For example, one or more heating filaments independently heat the crucible body, the steam jet nozzle part, and the crucible support part to maintain the temperature of the entire crucible. keep it uniform,
Keep the amount of steam ejected constant.

[Embodiment J of the invention An embodiment of the present invention will be described below with reference to the drawings.

FIG. 1 is a partially cutaway perspective view showing the interior of a thin film deposition apparatus according to an embodiment of the present invention, and in the figure, the same reference numerals as in FIGS. show. In Figure 1, (4b) the tri crucible body, (4c
) is a nozzle part for blowing out steam from the crucible, and (4d) is a crucible support part.

(6) //i is a heating filament and is arranged around the crucible body (4b), the crucible steam jet nozzle part (4c), and the crucible support part (4d) so that the temperature can be controlled independently. Consists of multiple cast filaments.

Next, the operation will be explained.

The generation of clusters in the vapor deposition apparatus of the above embodiment is carried out in a completely similar manner to that in the conventional vapor deposition apparatus. Therefore, here, we will explain the change in the temperature distribution of the crucible (4) due to the heating kettle (6) (e). That is, as shown in FIG. 1, the heating filament (6) is placed around the crucible body (4b), the nozzle part (4c), and the supporting part (4d). :'The temperature of each heating filament (6) can be controlled independently. Therefore, when using the conventional heating filament (6), each heating filament ( 6) Keep the temperature high, and conversely heat the crucible body (4b).
), and by keeping the temperature of the special heating filament (6) as low as the temperature of the heating filament (6), the amount of radiant heat and emitted electrons from the heating filament (6) to the crucible (4) can be controlled. (4) The overall temperature can be made uniform.

In the above embodiment, the crucible (4) has a cylindrical shape, but it may also be a rectangular parallelepiped or a prismatic shape.

In the embodiment described above, the steam ejection nozzle (4a) is provided on the top surface of the crucible (4), but the nozzle (4a) is provided on the side and bottom surface. Also in this case, the same effect can be achieved by changing the casting structure of the heating filament (6).

〔Effect of the invention〕

As described above, according to the present invention, a plurality of heating filaments are provided and the temperature of each filament can be controlled independently, so that the temperature of the entire crucible can be kept uniform and stable vapor deposition can be performed. It has the effect of being able to.

[Brief explanation of drawings]

FIG. 1 is a perspective view showing the interior of a thin film deposition apparatus according to an embodiment of the present invention with a part of the main part cut away, FIG. 2 is a schematic configuration diagram showing a conventional thin film deposition apparatus, and FIG. FIG. 2 is a perspective view showing the interior of a conventional thin film deposition apparatus with a part of the main part cut away. (1)...Vacuum chamber, (4)...Crucible, (4a)...
... Nozzle, (4b) ... Crucible body, (4c) ...
Steam ejection nozzle part, (4d)... Crucible support part, (
5)... Vapor deposition substance, (6)... Heating filament,
(9)...Ionized filament, (10)...Electron extraction electrode, (13)...Thermal electron, (15)...Neutral cluster, (16)...Cluster ion, (
18)...Substrate In the drawings, the same reference numerals indicate the same or corresponding parts. Agent Masuo Oiwa Figure 1 Figure 2

Claims (2)

[Claims] (1) A crucible placed in a vacuum chamber and filled with a vapor deposition material is heated by a heating filament to generate a cluster of atoms of the vapor deposition material, and this cluster of atoms is extracted from an ionization filament and an electron extracting electrode. In a device that forms a thin film by being ionized by thermal electrons, accelerated, and collided with a non-ionized neutral bulk atomic group on a substrate to form a thin film, the heating filament is composed of a plurality of filaments whose temperature can be controlled independently. A thin film deposition device featuring: (2) The plurality of heating filaments each include a crucible body,
The thin film deposition apparatus according to claim 1, which is disposed around the steam ejection nozzle part of the crucible and the crucible support part.