JPS60124919A - 薄膜蒸着装置 - Google Patents
薄膜蒸着装置Info
- Publication number
- JPS60124919A JPS60124919A JP23556983A JP23556983A JPS60124919A JP S60124919 A JPS60124919 A JP S60124919A JP 23556983 A JP23556983 A JP 23556983A JP 23556983 A JP23556983 A JP 23556983A JP S60124919 A JPS60124919 A JP S60124919A
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- substrate
- thin film
- clusters
- vapor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 11
- 238000007740 vapor deposition Methods 0.000 title description 4
- 239000000758 substrate Substances 0.000 claims abstract description 28
- 150000002500 ions Chemical class 0.000 claims abstract description 20
- 238000009826 distribution Methods 0.000 claims abstract description 9
- 238000000605 extraction Methods 0.000 claims description 15
- 238000000427 thin-film deposition Methods 0.000 claims description 10
- 230000001133 acceleration Effects 0.000 claims description 8
- 230000007935 neutral effect Effects 0.000 claims description 6
- 239000000126 substance Substances 0.000 claims description 5
- 239000002826 coolant Substances 0.000 claims description 3
- 239000000284 extract Substances 0.000 claims 1
- 239000010408 film Substances 0.000 abstract description 10
- 239000000498 cooling water Substances 0.000 abstract description 4
- 230000005684 electric field Effects 0.000 abstract description 4
- 238000001816 cooling Methods 0.000 abstract description 2
- 230000008595 infiltration Effects 0.000 abstract 1
- 238000001764 infiltration Methods 0.000 abstract 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 239000011701 zinc Substances 0.000 description 6
- 229910052725 zinc Inorganic materials 0.000 description 6
- 238000000151 deposition Methods 0.000 description 4
- 238000010884 ion-beam technique Methods 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 238000007736 thin film deposition technique Methods 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000007737 ion beam deposition Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 239000012466 permeate Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physical Vapour Deposition (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23556983A JPS60124919A (ja) | 1983-12-12 | 1983-12-12 | 薄膜蒸着装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23556983A JPS60124919A (ja) | 1983-12-12 | 1983-12-12 | 薄膜蒸着装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60124919A true JPS60124919A (ja) | 1985-07-04 |
| JPH0215629B2 JPH0215629B2 (enrdf_load_stackoverflow) | 1990-04-12 |
Family
ID=16987929
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP23556983A Granted JPS60124919A (ja) | 1983-12-12 | 1983-12-12 | 薄膜蒸着装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60124919A (enrdf_load_stackoverflow) |
-
1983
- 1983-12-12 JP JP23556983A patent/JPS60124919A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0215629B2 (enrdf_load_stackoverflow) | 1990-04-12 |
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