JPS60119732A - Device for coating of powder glass solution - Google Patents

Abstract

PURPOSE:To prevent the creeping of glass solution on the back side of a substrate by a method wherein the powder glass solution is dripped on the substrate using a nozzle, and when the glass solution is applied on the surface of the substrate by rotating the substrate, another nozzle from which gas or powder glass solution will be jetted out toward the edge part of the substrate is provided below the substrate. CONSTITUTION:A substrate supporting stand 2 whereon a substrate 1 will be placed is provided in a case 4, a powder glass solution is dripped on the surface of the substrate 1 from a nozzle 3 while the supporting stand 2 is being rotated, and said solution is applied on the surface of the substrate 1. According to this constitution, another nozzle 7 which jets out air, N2 gas or powder glass solvent is provided on the back side of the substrate facing the edge part of the substrate 1. Through these procedures, the creeping of the powder glass solution on the back side of the substrate 1 can be prevented. Also, the back side of the substrate 1 can be dried up completely, if a nozzle 8 which jets out gas symmetrically to the nozzle 7 is provided in addition to the nozzle 7.

Description

Detailed Description of the Invention [Technical Field] The present invention provides a method for forming a 5102 film by spin coating and sintering a powdered glass separation liquid.
The present invention relates to a powder glass coating device having a function of preventing powder glass solution from getting around to the back side of a coated substrate.

In recent years, the development and research of integrated circuits or large-scale integrated circuits has been actively promoted in various places. Furthermore, research toward the practical use of thin film semiconductor devices is becoming more active. In these devices, thin films play an important role. In particular, insulating thin films are used as insulation or passivation between semiconductor thin films. Furthermore, M.O.S.
(Metal.

In Oy:ide Sem1conductor) type devices, it plays an extremely important role as a gate film. For insulating thin films used in semiconductor devices,
(1) The specific resistance is sufficiently large, (2) the breakdown voltage is sufficiently large, (8) the step coverage is good,
(4) Characteristics such as a simple formation method are required.

Item (1) is necessary to achieve perfect insulation between wiring layers. Item (2) is necessary to maintain sufficient strength to withstand static electricity and improve the reliability of the element. Item (8) indicates that even when an insulating thin film is formed on the stepped portion, the film quality of the insulating thin film described in item (z) s < ir) does not deteriorate, and the breakdown voltage decreases at the stepped portion. It is necessary to avoid this. Furthermore, when a wiring pattern of aluminum or transparent conductive film is formed on an insulating thin film covering a stepped portion in an integrated circuit or the like, this item is necessary to prevent disconnection of the wiring pattern. (4) is an important item for cost reduction.The type of insulating thin film is silicon dioxide (
Sin2), each cotton silicate glass (PS()(ph
ospho-si'1icate glass) etc.) Alumina (Al1") 1m silica: 17 (813
14) etc. The most commonly used 51 ozN will be described below. When considering Sl as the conductor of the board, S10. Film forming methods are broadly classified into two types: oxidation methods and deposition methods. The former method is a method in which the surface layer of the substrate material is directly made into an insulator through a chemical reaction, and is effective when forming a gate film. The latter is a method of depositing an insulating film on the substrate surface by physical or chemical means, and is a method used for forming an insulating film between the eyebrows, passivation, or a gate film. Below, we will discuss deposition methods that have a wide range of applications. Sin.

The film deposition method is CVD using oxidation in the gas phase.
(Ochemical Vapor Deposit
PVD (Physical Vapor Dep.
There is a method (position). The 5102 film produced by the method described above is an excellent insulating thin film with sufficient resistivity and breakdown voltage. However, the equipment used for its production requires a large-scale device equipped with an electric furnace and a quartz reaction tube connected to various gas systems.

Therefore, in order to reduce costs, S10. Forming a film is a matter of concern. A powder glass sintering method is one of the simple methods for forming siotM. This involves suspending finely powdered glass in an organic solvent, and applying this suspension uniformly onto the bottom plate using a spinner that uses centrifugal force.
This is a method f in which glass powder is softened and sintered by heating after evaporating the solvent. The characteristics of this method are that the glass can be directly selected according to the purpose, such as the thermal expansion coefficient, there are no pinholes because it is softened, and the coating can be easily obtained at room temperature and pressure, making mass production possible. In addition, by setting the powder glass solution or the rotation speed of the spinner to an appropriate value, S10. The film thickness can be freely controlled, the cost can be reduced due to the ease of large-diameter and large-scale processing, and it has good step filmability. In this way, the powder glass sintering method has an extremely excellent 51o2
This is a method for forming 11Q. The present invention proposes a powder glass solution application device for maximally bringing out the characteristics of the powder glass sintering method, which has been degraded as described above. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS A conventional powder glass bath liquid coating apparatus will be described below, and then the present invention will be described in detail.

[Prior art]

Conventionally, a conventional spinner coating apparatus has been used to apply a powdered glass solution, and an outline thereof is shown in FIG.

The substrate 1 is brought into close contact with a substrate support stand 2 using a vacuum chuck, and the powder glass solution is dripped onto the substrate 1 from the drip nozzle 3, and the powder glass solution is applied by centrifugal force by rotating the substrate support stand 2 at high speed. Apply on the substrate. Case 4 is for preventing the solution from scattering around. When applying a powdered glass solution using this device, the biggest problem is that the powdered glass solution flows around from the edge of the substrate to the back side. When the powdered glass solution spreads to the backside of the substrate, a thin, non-uniform 5102 film is formed after firing. Figure 2 briefly shows the situation. 1 is a substrate, and 5 is S10. formed on the surface of the substrate. The film 6 is a thin and non-uniform SiO□ film formed by wrapping around to the back side. This thin and uneven slo, @ is easy to get stuck,
Easy to peel off from the board. S10 peels off like this
．． If the substrate with the film is sent to the next process, process defects will occur. For example, if the next process is a photo-etching process, the peeled-off 5102 becomes foreign matter, resulting in poor alignment or poor patterning of the resist. This results in a decrease in yield.

〔the purpose〕

The present invention provides S10 using a sintering method. The purpose is to propose a powder glass coating device that solves the problems that arise when using conventional powder glass coating devices as described above and maximizes the advantages of the sintering method. To achieve this purpose, a nozzle for ejecting gas or powdered glass solvent is installed near the substrate support in the spin coating equipment to prevent the powdered glass bath liquid from going around to the back side of the substrate during spin coating. The outline of the present invention is to eject a gas or powdered glass solvent in this manner.

〔Example〕

An embodiment of the present invention is shown in FIG. 3 (α). 1 is a substrate, 2 is a substrate support stand, 6 is a powder glass solution dropping nozzle, 4 is a case, and 7 is a nozzle for spouting gas or powder glass solvent. In the figure, the broken line indicates the direction in which the gas or powdered glass solvent is ejected. During spin coating, excess powdered glass solution flows from the edge of the substrate 1 to the back side of the substrate. A nozzle 7 fixed near the center of rotation of the substrate support is installed facing the edge of the substrate, and by spouting gas or powdered glass solvent from this nozzle 7, powdered glass liquid is applied to the back of the substrate. prevent being The gas may be air, N, or gas. Further, an organic solvent is used as the powder glass solvent, and ethyl alcohol is usually used. When spouting the powdered glass solvent from the nozzle 7, as shown in FIG. If the backside of the substrate is dried by blowing out gas, the process will be more complete.

〔effect〕

If the powder glass solution can be prevented from getting around to the back surface of the substrate, peeling of the Sin can be prevented and defects in the process can be reduced, leading to an improvement in yield.

In this way, it is expected that by using the device proposed in the present invention, 5102 made by the powder glass sintering method, which has the excellent characteristics as described above, will be able to be widely used in semiconductor devices. Ru.

[Brief explanation of drawings]

FIG. 1 is a diagram showing a conventional spin coating apparatus. Second
The figure shows the state of the 8102 film when a powdered glass solution is applied to a substrate using a conventional spin coating device, and shows the state of the 8102 film in S10. This shows that the surface is also formed non-uniformly on the back side of the substrate. Part 3 (2) is a diagram showing a powder glass solution coating device proposed in the present invention. Applicant: Suwa Seikosha Co., Ltd. Figure 2

Claims (3)

[Claims] (1) In a powder glass solution coating device that applies the powder glass bath solution onto the substrate by dropping a powder glass solution onto the substrate and rotating the substrate, a gas or powder glass solution is placed under the substrate. of? A powder glass solution coating device characterized by being equipped with a nozzle for spouting a J medium. (2) Powdered glass solution application according to claim 1, characterized in that the nozzle spouts gas or powdered glass solvent from below the center of rotation of the substrate toward the edge of the substrate. Device. (3) The powder glass solution coating apparatus according to Claims 1 and 2, characterized in that a gas or powder glass solvent is ejected from a front self-nozzle at least while the substrate is rotating.