JPS60119728A - Etchant stirring device - Google Patents
Etchant stirring deviceInfo
- Publication number
- JPS60119728A JPS60119728A JP22808783A JP22808783A JPS60119728A JP S60119728 A JPS60119728 A JP S60119728A JP 22808783 A JP22808783 A JP 22808783A JP 22808783 A JP22808783 A JP 22808783A JP S60119728 A JPS60119728 A JP S60119728A
- Authority
- JP
- Japan
- Prior art keywords
- etchant
- etching
- rotor
- fan
- beaker
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000003756 stirring Methods 0.000 title claims abstract description 7
- 238000005530 etching Methods 0.000 claims abstract description 22
- 239000007788 liquid Substances 0.000 claims description 4
- 239000004065 semiconductor Substances 0.000 abstract description 3
- 235000012431 wafers Nutrition 0.000 abstract 4
- 238000000034 method Methods 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000002253 acid Substances 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- 238000013019 agitation Methods 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- ing And Chemical Polishing (AREA)
- Weting (AREA)
Abstract
Description
【発明の詳細な説明】
〔技術分野〕
この発明は半導体の製造に使用するエツチング液攪拌装
置に関する。DETAILED DESCRIPTION OF THE INVENTION [Technical Field] The present invention relates to an etching solution agitation device used in the manufacture of semiconductors.
半導体装置の製造工程におい′Cアルミ4ウム電極のエ
ツチングやシリコンのエツチングを行なう場合、第3図
の如く作製し之エソナヤント(エツチング液)の配合が
液のどの部分でも一様になるように、エッチャントを入
れたビーガー(5)の底に回転子(4)t″入れ、ビー
カー(5)を置いたスターラーテープル(6)の回転磁
界により、回転子(4)が回転しビーカー(5)内のエ
ッチャントが常時攪拌されている。このため、酸の如き
混合しにくい溶液でも一応一様な配合性がでる。しかし
ながらウェル(1)?ウェハキャリア(2)に入れてビ
ーカー(5)内に浸してエツチングする際に、エツチン
グ部に生じる気泡がウェハ(IIIC付着してエツチン
グの妨げになったり、エツチング部のエッチャントが反
応してしまって反応性の悪い液になることがあった。When etching 4'C aluminum electrodes or etching silicon in the manufacturing process of semiconductor devices, the composition of the etchant (etching solution) prepared as shown in Figure 3 should be uniform in all parts of the solution. The rotor (4) is placed at the bottom of the beaker (5) containing the etchant, and the rotating magnetic field of the stirrer table (6) on which the beaker (5) is placed causes the rotor (4) to rotate and move inside the beaker (5). The etchant is constantly stirred.For this reason, even solutions that are difficult to mix, such as acids, can be mixed with a uniform consistency.However, if the etchant is placed in the well (1)? During etching, air bubbles generated in the etching area may adhere to the wafer (IIIC) and hinder etching, or the etchant in the etching area may react, resulting in a solution with poor reactivity.
この発明はエツチング液會上下方向にも攪拌できるエツ
チング液攪拌装置金提供することを目的とする。SUMMARY OF THE INVENTION An object of the present invention is to provide an etching solution stirring device which can also stir the etching solution in the vertical direction.
この発明の要旨とするところはマグネソトスターラ−(
6)の回転子(4)にスクリューファン(7)ヲ取りつ
け、このスクリューファン(7)の回転にIリエソチン
グ液に水子方向及び鉛直方向の対流をつくることを特徴
とするエツチング液攪拌装置である。The gist of this invention is the magneto stirrer (
A screw fan (7) is attached to the rotor (4) of step 6), and the rotation of the screw fan (7) creates convection in the water direction and vertical direction in the etching solution. be.
第1図乃至第2図はこの発明の一実施例を示す。FIGS. 1 and 2 show an embodiment of the present invention.
回転子〜(4)はビーカー(5)の底面に安定載置さ九
るよう円板上に形成されており、その中央に軸杆’ +
81 t−突設してその先端にスクリューファン(7)
全形成している。The rotor (4) is formed on a disc so that it can be stably placed on the bottom of the beaker (5), and there is a shaft rod in the center of the rotor (4).
81 T-protruding screw fan (7) at its tip
Fully formed.
而して回転子(4)がビーカー(5)の底に沈められる
とき軸杆(8)は鉛直方向上方に向き、スクリューファ
ン(7)はピーガー(5)内底部を攪拌する1、このス
クリューファン(7)は鉛直下方への 力?持つよう形
成さnているので、回転子(4)の回転によりエツチン
グ液は水平方向及び鉛直上向に向けて対流される。When the rotor (4) is sunk to the bottom of the beaker (5), the shaft rod (8) faces vertically upward, and the screw fan (7) stirs the inner bottom of the peager (5). Does the fan (7) exert vertical downward force? As the rotor (4) rotates, the etching liquid is convected horizontally and vertically upward.
従ってこのエツチング液攪拌装置を用いるとエツチング
の際にウェハに付層した気泡を取り除きエツチング部が
常にエッチャントと接し、又液の対流が激しいため、エ
ツチング部へ常に未反応の新しいエッチャントが供給さ
れ、エツチングを促進し、ウェハ内でのエツチング速度
にバラツキが生じないのである。Therefore, when this etching liquid stirring device is used, air bubbles attached to the wafer are removed during etching, and the etching area is always in contact with the etchant. Also, since the liquid convection is intense, new unreacted etchant is constantly supplied to the etching area. This promotes etching and eliminates variations in etching speed within the wafer.
第11g!J、’5士第31図は本発明の一実施例を示
す図で、第1図は断面図、第2図は斜視図、第3図tま
従来例を示す斜視図である。
特許出願人
松下電工株式会社
代理人弁理士 竹 元 敏 丸
(ほか2名)11th g! 31 is a diagram showing an embodiment of the present invention, FIG. 1 is a sectional view, FIG. 2 is a perspective view, and FIG. 3 is a perspective view showing a conventional example. Patent applicant Matsushita Electric Works Co., Ltd. Representative patent attorney Toshimaru Takemoto (and 2 others)
Claims (1)
スクリューファン(7)ヲ取りつけ、このスクリューフ
ァン(7)の回転により、エツチング液に水平方向及び
鉛直方向の対流をつくることを特徴とするエツチング液
攪拌装置。(1) A screw fan (7) is attached to the rotor (4) of the magnetic stirrer (6), and the rotation of the screw fan (7) creates horizontal and vertical convection in the etching solution. Etching liquid stirring device.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP22808783A JPS60119728A (en) | 1983-11-30 | 1983-11-30 | Etchant stirring device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP22808783A JPS60119728A (en) | 1983-11-30 | 1983-11-30 | Etchant stirring device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS60119728A true JPS60119728A (en) | 1985-06-27 |
Family
ID=16870983
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP22808783A Pending JPS60119728A (en) | 1983-11-30 | 1983-11-30 | Etchant stirring device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS60119728A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
ES2073993A2 (en) * | 1993-04-27 | 1995-08-16 | Univ Cadiz | Magnetic agitator (stirrer) for test chambers in static systems for detecting toxic gases |
DE19813232A1 (en) * | 1998-03-26 | 1999-11-25 | Naturwissenschaftliches Und Me | Magnetic-stirrer rotated-element with holders for liquid submerged laboratory test-pieces or work undergoing processing, such as etching of electronic components |
CN103762160A (en) * | 2014-01-28 | 2014-04-30 | 北京华力创通科技股份有限公司 | Deep silicon etching method and device |
CN111379009A (en) * | 2020-04-30 | 2020-07-07 | 中国电子科技集团公司第五十五研究所 | Thin film lithium niobate optical waveguide chip polishing device and polishing method thereof |
-
1983
- 1983-11-30 JP JP22808783A patent/JPS60119728A/en active Pending
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
ES2073993A2 (en) * | 1993-04-27 | 1995-08-16 | Univ Cadiz | Magnetic agitator (stirrer) for test chambers in static systems for detecting toxic gases |
DE19813232A1 (en) * | 1998-03-26 | 1999-11-25 | Naturwissenschaftliches Und Me | Magnetic-stirrer rotated-element with holders for liquid submerged laboratory test-pieces or work undergoing processing, such as etching of electronic components |
DE19813232C2 (en) * | 1998-03-26 | 2000-05-04 | Naturwissenschaftliches Und Me | Magnetic stirrer with sample holder function |
CN103762160A (en) * | 2014-01-28 | 2014-04-30 | 北京华力创通科技股份有限公司 | Deep silicon etching method and device |
CN103762160B (en) * | 2014-01-28 | 2017-05-10 | 北京华力创通科技股份有限公司 | Deep silicon etching method |
CN111379009A (en) * | 2020-04-30 | 2020-07-07 | 中国电子科技集团公司第五十五研究所 | Thin film lithium niobate optical waveguide chip polishing device and polishing method thereof |
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