JPS60119728A - Etchant stirring device - Google Patents

Etchant stirring device

Info

Publication number
JPS60119728A
JPS60119728A JP22808783A JP22808783A JPS60119728A JP S60119728 A JPS60119728 A JP S60119728A JP 22808783 A JP22808783 A JP 22808783A JP 22808783 A JP22808783 A JP 22808783A JP S60119728 A JPS60119728 A JP S60119728A
Authority
JP
Japan
Prior art keywords
etchant
etching
rotor
fan
beaker
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP22808783A
Other languages
Japanese (ja)
Inventor
Takuji Keya
毛野 拓治
Yoshishige Hayashi
林 良茂
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Electric Works Co Ltd
Original Assignee
Matsushita Electric Works Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Works Ltd filed Critical Matsushita Electric Works Ltd
Priority to JP22808783A priority Critical patent/JPS60119728A/en
Publication of JPS60119728A publication Critical patent/JPS60119728A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306Chemical or electrical treatment, e.g. electrolytic etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • ing And Chemical Polishing (AREA)
  • Weting (AREA)

Abstract

PURPOSE:To accelerate the action of etching by a method wherein, using a magnetic stirrer on the etchant stirring device to be used on a semiconductor device, a screw fan is attached to the rotor of a magnetic stirrer, thereby enabling to generate a convection current in horizontal and vertical directions is generated in etchant. CONSTITUTION:The frame retaining a number of wafers 1 leaving a space between them is placed in the beaker 5 wherein an etchant is filled up, and the beaker 5 is placed on a magnetic stirrer 6. Also, a rotor 4 is arranged in the beaker 5 under the frame, and a screw fan 7 is fixed to the axial stud 8 which is protruding from the rotor 4. At this time, the shape of the fan 7 is formed in such a manner that the fan will have strength in vertical downward direction. As a result, the bubbles adhered to the wafer 1 are separated, the wafer is always maintained in the state wherein it comes in contact with new etchant, the speed of etching is increased and, at the same time, the irregularity of speed in the wafer 1 can be prevented.

Description

【発明の詳細な説明】 〔技術分野〕 この発明は半導体の製造に使用するエツチング液攪拌装
置に関する。
DETAILED DESCRIPTION OF THE INVENTION [Technical Field] The present invention relates to an etching solution agitation device used in the manufacture of semiconductors.

〔背景技術〕[Background technology]

半導体装置の製造工程におい′Cアルミ4ウム電極のエ
ツチングやシリコンのエツチングを行なう場合、第3図
の如く作製し之エソナヤント(エツチング液)の配合が
液のどの部分でも一様になるように、エッチャントを入
れたビーガー(5)の底に回転子(4)t″入れ、ビー
カー(5)を置いたスターラーテープル(6)の回転磁
界により、回転子(4)が回転しビーカー(5)内のエ
ッチャントが常時攪拌されている。このため、酸の如き
混合しにくい溶液でも一応一様な配合性がでる。しかし
ながらウェル(1)?ウェハキャリア(2)に入れてビ
ーカー(5)内に浸してエツチングする際に、エツチン
グ部に生じる気泡がウェハ(IIIC付着してエツチン
グの妨げになったり、エツチング部のエッチャントが反
応してしまって反応性の悪い液になることがあった。
When etching 4'C aluminum electrodes or etching silicon in the manufacturing process of semiconductor devices, the composition of the etchant (etching solution) prepared as shown in Figure 3 should be uniform in all parts of the solution. The rotor (4) is placed at the bottom of the beaker (5) containing the etchant, and the rotating magnetic field of the stirrer table (6) on which the beaker (5) is placed causes the rotor (4) to rotate and move inside the beaker (5). The etchant is constantly stirred.For this reason, even solutions that are difficult to mix, such as acids, can be mixed with a uniform consistency.However, if the etchant is placed in the well (1)? During etching, air bubbles generated in the etching area may adhere to the wafer (IIIC) and hinder etching, or the etchant in the etching area may react, resulting in a solution with poor reactivity.

〔発明の目的〕[Purpose of the invention]

この発明はエツチング液會上下方向にも攪拌できるエツ
チング液攪拌装置金提供することを目的とする。
SUMMARY OF THE INVENTION An object of the present invention is to provide an etching solution stirring device which can also stir the etching solution in the vertical direction.

〔発明の開示〕[Disclosure of the invention]

この発明の要旨とするところはマグネソトスターラ−(
6)の回転子(4)にスクリューファン(7)ヲ取りつ
け、このスクリューファン(7)の回転にIリエソチン
グ液に水子方向及び鉛直方向の対流をつくることを特徴
とするエツチング液攪拌装置である。
The gist of this invention is the magneto stirrer (
A screw fan (7) is attached to the rotor (4) of step 6), and the rotation of the screw fan (7) creates convection in the water direction and vertical direction in the etching solution. be.

第1図乃至第2図はこの発明の一実施例を示す。FIGS. 1 and 2 show an embodiment of the present invention.

回転子〜(4)はビーカー(5)の底面に安定載置さ九
るよう円板上に形成されており、その中央に軸杆’ +
81 t−突設してその先端にスクリューファン(7)
全形成している。
The rotor (4) is formed on a disc so that it can be stably placed on the bottom of the beaker (5), and there is a shaft rod in the center of the rotor (4).
81 T-protruding screw fan (7) at its tip
Fully formed.

而して回転子(4)がビーカー(5)の底に沈められる
とき軸杆(8)は鉛直方向上方に向き、スクリューファ
ン(7)はピーガー(5)内底部を攪拌する1、このス
クリューファン(7)は鉛直下方への 力?持つよう形
成さnているので、回転子(4)の回転によりエツチン
グ液は水平方向及び鉛直上向に向けて対流される。
When the rotor (4) is sunk to the bottom of the beaker (5), the shaft rod (8) faces vertically upward, and the screw fan (7) stirs the inner bottom of the peager (5). Does the fan (7) exert vertical downward force? As the rotor (4) rotates, the etching liquid is convected horizontally and vertically upward.

〔発明の効果〕〔Effect of the invention〕

従ってこのエツチング液攪拌装置を用いるとエツチング
の際にウェハに付層した気泡を取り除きエツチング部が
常にエッチャントと接し、又液の対流が激しいため、エ
ツチング部へ常に未反応の新しいエッチャントが供給さ
れ、エツチングを促進し、ウェハ内でのエツチング速度
にバラツキが生じないのである。
Therefore, when this etching liquid stirring device is used, air bubbles attached to the wafer are removed during etching, and the etching area is always in contact with the etchant. Also, since the liquid convection is intense, new unreacted etchant is constantly supplied to the etching area. This promotes etching and eliminates variations in etching speed within the wafer.

【図面の簡単な説明】[Brief explanation of drawings]

第11g!J、’5士第31図は本発明の一実施例を示
す図で、第1図は断面図、第2図は斜視図、第3図tま
従来例を示す斜視図である。 特許出願人 松下電工株式会社 代理人弁理士 竹 元 敏 丸 (ほか2名)
11th g! 31 is a diagram showing an embodiment of the present invention, FIG. 1 is a sectional view, FIG. 2 is a perspective view, and FIG. 3 is a perspective view showing a conventional example. Patent applicant Matsushita Electric Works Co., Ltd. Representative patent attorney Toshimaru Takemoto (and 2 others)

Claims (1)

【特許請求の範囲】[Claims] (1) マグネットスターラ−(6)の回転子(4)に
スクリューファン(7)ヲ取りつけ、このスクリューフ
ァン(7)の回転により、エツチング液に水平方向及び
鉛直方向の対流をつくることを特徴とするエツチング液
攪拌装置。
(1) A screw fan (7) is attached to the rotor (4) of the magnetic stirrer (6), and the rotation of the screw fan (7) creates horizontal and vertical convection in the etching solution. Etching liquid stirring device.
JP22808783A 1983-11-30 1983-11-30 Etchant stirring device Pending JPS60119728A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP22808783A JPS60119728A (en) 1983-11-30 1983-11-30 Etchant stirring device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP22808783A JPS60119728A (en) 1983-11-30 1983-11-30 Etchant stirring device

Publications (1)

Publication Number Publication Date
JPS60119728A true JPS60119728A (en) 1985-06-27

Family

ID=16870983

Family Applications (1)

Application Number Title Priority Date Filing Date
JP22808783A Pending JPS60119728A (en) 1983-11-30 1983-11-30 Etchant stirring device

Country Status (1)

Country Link
JP (1) JPS60119728A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
ES2073993A2 (en) * 1993-04-27 1995-08-16 Univ Cadiz Magnetic agitator (stirrer) for test chambers in static systems for detecting toxic gases
DE19813232A1 (en) * 1998-03-26 1999-11-25 Naturwissenschaftliches Und Me Magnetic-stirrer rotated-element with holders for liquid submerged laboratory test-pieces or work undergoing processing, such as etching of electronic components
CN103762160A (en) * 2014-01-28 2014-04-30 北京华力创通科技股份有限公司 Deep silicon etching method and device
CN111379009A (en) * 2020-04-30 2020-07-07 中国电子科技集团公司第五十五研究所 Thin film lithium niobate optical waveguide chip polishing device and polishing method thereof

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
ES2073993A2 (en) * 1993-04-27 1995-08-16 Univ Cadiz Magnetic agitator (stirrer) for test chambers in static systems for detecting toxic gases
DE19813232A1 (en) * 1998-03-26 1999-11-25 Naturwissenschaftliches Und Me Magnetic-stirrer rotated-element with holders for liquid submerged laboratory test-pieces or work undergoing processing, such as etching of electronic components
DE19813232C2 (en) * 1998-03-26 2000-05-04 Naturwissenschaftliches Und Me Magnetic stirrer with sample holder function
CN103762160A (en) * 2014-01-28 2014-04-30 北京华力创通科技股份有限公司 Deep silicon etching method and device
CN103762160B (en) * 2014-01-28 2017-05-10 北京华力创通科技股份有限公司 Deep silicon etching method
CN111379009A (en) * 2020-04-30 2020-07-07 中国电子科技集团公司第五十五研究所 Thin film lithium niobate optical waveguide chip polishing device and polishing method thereof

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