JPS60117716A - 成膜方法 - Google Patents

成膜方法

Info

Publication number
JPS60117716A
JPS60117716A JP58226656A JP22665683A JPS60117716A JP S60117716 A JPS60117716 A JP S60117716A JP 58226656 A JP58226656 A JP 58226656A JP 22665683 A JP22665683 A JP 22665683A JP S60117716 A JPS60117716 A JP S60117716A
Authority
JP
Japan
Prior art keywords
drum
reaction vessel
forming method
film forming
conductive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58226656A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0456450B2 (enrdf_load_stackoverflow
Inventor
Zenko Hirose
広瀬　全孝
Takeshi Ueno
毅 上野
Katsumi Suzuki
克己 鈴木
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP58226656A priority Critical patent/JPS60117716A/ja
Publication of JPS60117716A publication Critical patent/JPS60117716A/ja
Publication of JPH0456450B2 publication Critical patent/JPH0456450B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Light Receiving Elements (AREA)
JP58226656A 1983-11-30 1983-11-30 成膜方法 Granted JPS60117716A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58226656A JPS60117716A (ja) 1983-11-30 1983-11-30 成膜方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58226656A JPS60117716A (ja) 1983-11-30 1983-11-30 成膜方法

Publications (2)

Publication Number Publication Date
JPS60117716A true JPS60117716A (ja) 1985-06-25
JPH0456450B2 JPH0456450B2 (enrdf_load_stackoverflow) 1992-09-08

Family

ID=16848595

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58226656A Granted JPS60117716A (ja) 1983-11-30 1983-11-30 成膜方法

Country Status (1)

Country Link
JP (1) JPS60117716A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04119006U (ja) * 1991-04-05 1992-10-23 大和ハウス工業株式会社 鉄骨柱脚

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52132677A (en) * 1976-01-22 1977-11-07 Western Electric Co Reactor for radiating flow
JPS54134972A (en) * 1978-04-12 1979-10-19 Tokyo Denki Daigaku Diode discharge tube having metal mesh anode
JPS58208120A (ja) * 1982-05-27 1983-12-03 Agency Of Ind Science & Technol 薄膜シリコン生成装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52132677A (en) * 1976-01-22 1977-11-07 Western Electric Co Reactor for radiating flow
JPS54134972A (en) * 1978-04-12 1979-10-19 Tokyo Denki Daigaku Diode discharge tube having metal mesh anode
JPS58208120A (ja) * 1982-05-27 1983-12-03 Agency Of Ind Science & Technol 薄膜シリコン生成装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04119006U (ja) * 1991-04-05 1992-10-23 大和ハウス工業株式会社 鉄骨柱脚

Also Published As

Publication number Publication date
JPH0456450B2 (enrdf_load_stackoverflow) 1992-09-08

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