JPS60116125A - Film forming method - Google Patents

Abstract

PURPOSE:To concentrate a plasma on a substrate to enhance the density of an atomic film and to accelerate the film forming velocity by opposing a cylindrical conductive substrate and an electrode in a reaction chamber reduced in pressure, connecting them with an AC power source, generating a plasma in stock gas presented in the chamber, and connecting the substrate through an inductance element with the power source when forming the atomic film contained in gas on the surface of the substrate, thereby concentrating the plasma on the substrate. CONSTITUTION:A stock gas filling tube 2 is connected through a valve 7 with one end of a reaction chamber 1, an exhaust tube 3 is provided through a valve 4 at the other end, and an electrode 5 and a support base 12 for placing a conductive substrate 6 are opposed in the chamber 1, and the substrate 6 is heated by a heater 13 provided on the lower surface of the base 12. The end projected from the lower surface of the base 12 is grounded through an inductance element 16, and the electrode 5 is connected with a high frequency power source 10 grounded through a matching box 11. Thus, a current directed to the side wall 8 of the current directed to the substrate 5 from the substrate 6 is reduced to concentrate the plasma to the substrate 6.

Description

DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention 1] The present invention relates to a method for forming a thin film of di-1-crystalline rt I+4j or the like.

[Technical problems of the invention I+'] How to form an amorphous film, such as an amorphous silicon film, on the surface of a cylindrical conductive JIl plate. )C is G1]-
A method is known in which a film is formed by decomposing a source gas containing silicon by electric discharge.1 This method utilizes, for example, a film forming apparatus as shown in FIG. In other words, SZ++% (silane) is placed in the reaction chamber 1, which has been depressurized to about 10%.
A raw material gas containing silicon, such as and reaction chamber 1
Plasma is generated by applying high frequency power between the electrode 5 and the substrate 6 that are arranged opposite to each other in the amorphous layer 11.
An elementary film is formed.

[13.7 is a valve for adjusting the flow M of the raw material gas introduced into the reaction chamber 1 from the introduction pipe 2, 8 is a side wall of the reaction chamber 1, and 9 is a valve that electrically insulates the electrode 5 from this side wall 8. 10 is a frequency power supply for supplying high i-wave electricity to the electrode 5 and the conductive substrate 6; 11 is this
A matching box is used to perform matching so that the high frequency signal from the frequency power supply 10 is efficiently applied, 12 is a support stand for supporting the conductive substrate 6, and 13 is a matching box for supporting the conductive substrate 6 with a reaction hot stone (150°C to 300°C). It is a heater that heats up.

Further, one end of the high frequency power source 10 is grounded, and the other end is connected to a matching box 11.

Furthermore, the respect 1 (1 substrate 6 is connected to the side wall 8 via the support stand 12).
Both are grounded.

However, in such a film formation method, 1 (5414
As mentioned above, plasma is generated at 5F between the electrode 55 and the conductive substrate 6, and raw film formation is performed.
In addition to the discharge current 1a flowing from the conductor 11 toward the base plate 6, a discharge current 1wt) flows from the electrode 5 toward the side wall 8, and plasma '14 is diffused.

4. In order to form a film, part of the high frequency power applied to the frequency 71? source 10 is m!!Ii!
3 and the side wall 8, which has the disadvantage that the film forming efficiency is significantly deteriorated.

In this conventional film-forming method, for example, "a high-frequency power source 10 with an output of 3.56 Ml-1z i OOW is used, and the pressure in the reaction chamber 1 is set at 0.4 Torr. Film formation was performed by introducing silane gas as a raw material gas at a flow rate of 180 SCCM (mC).
In the case of 1/j, the film formation rate was about 6 μm per hour.

Therefore, in this film formation method, for example, when forming an amorphous silicon film with a thickness of about 20 μm as in an electrophotographic photoreceptor, a long time is required for the formation, and it is difficult to manufacture it industrially. It was inappropriate for

[Objective of the Invention 1 This article was made in view of the circumstances mentioned above.
t>, an object of the present invention is to provide a film formation method that allows high-speed film formation.

[Summary of the Invention 1] The present invention focuses the plasma of the raw material gas on the part of the conductive substrate on which the film is to be formed, by avoiding the interposition of an inductance element between the AC power source such as a high frequency power source and the S conductive plate. Moreover, by increasing the density and improving the film-forming efficiency, 1! ! This is a film formation method that enables S-speed film formation.

Examples of the invention] The present invention will be explained below based on illustrated embodiments.

However, FIG. 2 shows a diagram for realizing the film forming method according to the present invention.
FIG. 2 is an explanatory diagram that does not show the configuration of the first film forming apparatus.

In this Fig. 2, parts that are the same as those in the conventional construction device shown in Fig. A heater 13 is mounted on the I stand 12 in the direction of the body, and this support stand 12 is electrically insulated from the side wall 8 by using an rfMC insulator 15).
The support base 12 is grounded via the variable inductance element 16, and the side wall 8 is directly grounded.

The parts other than this part are the same as the conventional film forming apparatus shown in Figure 1.
“It is made up of 11 people.

3 shows the film forming circuit shown in FIG. .

g: One end of the C high-frequency power supply 10 is connected to the J3-C1 electrode 5 via the 7-tube box '11, and the other end of the high-frequency power supply is grounded. -(LC combined with capacitor and
It has the role of matching the output impedance of the high frequency power supply 10 and improving the transmission efficiency of the high frequency power.

By applying high frequency power between the electrode 5 and the easily conductive substrate 6, a discharge 11- is generated between the two, and plasma of the raw material gas is generated.

In this case, the plasma is the electrode 5, the conductive group 1fii
6 and near the side wall 8 are dark areas, and -3 is a bright area in the center. Therefore, when this dark part is replaced with a condenser, a capacitor Cc is formed on the electrode 5 side, and a capacitor Oa is formed on the conductive substrate 6 side (formed between the conductive substrate 6 and the plasma positive column). It can be considered as an IC by connecting the capacitance due to the sheath) and the side wall E (the capacitance due to the sheath) and the side wall E (side).

l'n'nza Qc, Ca, and CW are respectively tl,
j are mutually connected via alternating current impedance Z.

The other end of the = 1-line CW is installed via the side wall 8.

Furthermore, the conductive substrate 6 is grounded via an inductance element 16.

Therefore, when high frequency power is applied from the single frequency power supply 10 to the electrode 5, a discharge current of 1 G flows through the side wall 80.
The discharge current 1w flows in the part of the conductive substrate 6, and the discharge current 1a flows in the part of the conductive substrate 6. In terms of 3 degrees, it becomes l f knee 1 a + V, where 11 of the current 1w is large. , /iI!Electricity!,: The electric power is 111. And /, and the JJL + %' generation is shown on the side wall 8 ijE.
11 PCBs 63 lbs 1 (2000) Blasma output will be reduced.

This 1=me, the film formation efficiency on the conductive substrate 6 is 11 (!).

Then, by adjusting the variable inductance A10, the value 1- of the r inductance element 1G becomes a value such that = lnshira→]Oa between C' (shape).1. 4 Ru.

I love this JI-1! If Article 1'1 is satisfied;-
(Yo, shown in Figure 3 1) 1. : In the equivalent circuit IaX, starting from the electrode 5 side, the impedance of the circuit including the conductive substrate 6 is minimum A, so the impedance I on the side wall ξ3 side;
L Ii will be 3 people.

In addition, the current IW becomes almost negligible, and the state becomes substantially t=lc-1a. .

Since the plasma 7 is concentrated in the vicinity of the conductive substrate 6, the decomposition efficiency of the raw material gas present in the vicinity of the substrate 6 is greatly increased, and the film formation rate is increased.

Next, an embodiment of a film forming method using the film forming apparatus shown in FIG. 2 will be described.

(1) Operate the exhaust device (not shown) connected to the exhaust pipe 3 until the 1'' force in the reaction chamber becomes 10 = 6-r old (1) (at this time, the pulp 4 is fully open). )
.

(2) Next, the heater 13 is operated to heat the conductive substrate 6 to a temperature between 150°C and 300°C.

In this case, the conductive substrate 6 is a flat plate made of aluminum 1X, and is supported by a support stand 12.

(3) Next, the C valve 7 is released, and the raw material gas is introduced into the reaction chamber 1 via the introduction pipe 2. Silane gas was used as the source gas C, and the flow m was 1808 CCM.

In addition, as the raw II gas, higher-order silane such as disilane may be used alone or in combination with silane gas.
Furthermore, when adding additives to the film, a gas containing the additives may be introduced at the same time.

If you trace it to the beginning, the non-crystalline silicone crotch that will be formed.
■ To perform electronic control, Zhou! 11J rate table 4P A or Va group gas is introduced at the same time, and ratio 11 (
To control the resistance, ll! 29 gases containing I element, carbon or nitrogen at the same time, -c"b is good.

〈/I) Next, the opening degree of the valve 4 is adjusted and set to 0 and 41 orr in the reaction chamber 1.

(5) Furthermore, operate the high frequency power supply 10 j4'U,
High frequency power is applied between the electrode 5 and the conductive substrate 6.

In this case, the high frequency power (11J plus ζ) is equal to the frequency WQ'
+3.

There was 561vl tl Z power '+00W.

When the OJ variable inductance line r10 is set to t#! When adjusted, the above one! (When the vibration conditions are met, the flame spreads out near 31i of the conductive substrate 6 (-light is generated).

(6) In this way (2 conditions), the high-frequency When the power supply 10 continues to operate, the electric current L (on the surface of the board 6, the amorphous 11 Kimaki Jl is activated).

In this case, the film formation rate was about 16 μm per hour, which made it possible to form a film at a speed of about 2°7 (rs) compared to the conventional film formation method.

Next, referring to FIG. 4, a cylindrical b is used as the conductive substrate 6.
I will explain an example using .

The reaction chamber 1 is installed on a base 17, and a support stand 12 is installed inside the reaction chamber 1.

This support base '12 is connected to the gear 19 via the shirts I-18. The gear 19 meshes with a gear 21 attached to the motor 2o.

Therefore, due to the rotation of the rotor 20, the rotation of the rotor 20 causes
The support base 12 is constant 31 through 8! The mark allows it to rotate by -4. The shift shaft 18 is electrically insulated by an insulator 22, and is grounded via a variable -r resistance element F16. On the other hand, a heater 13 is provided upright on the support base 12, and a cylindrical conductive substrate 6 is fitted onto the top of the support base 12, surrounding the heater 13.

Coaxially with the conductive substrate 6, an electric current 4^ is placed inside the reaction chamber 1.
5 is established () and C is present. This electrode 56 is cylindrical (
, has a plurality of holes 23 on its inner surface.

A gas introduction port 2/I is provided on one side of the side wall 8, and a gas discharge port 25 is provided on the other side, and a valve 7 is provided.
Each of them is connected to the trachea 3 via a valve 4. In this case, the inlet 24 and IJI +Ii I
-125 is electrically insulated from the side wall 8 by insulators 26,27.

Furthermore, the high frequency 7G source'IO is connected to the mating box 1.
1 to the inlet 2/I, which is electrically connected to the electrode 5 and the conductive substrate 6 to which five-frequency power is applied. (There is.

Also, Den I! i5 is to the right of hole 23, and introduction II 2
/1 and IJI' fl, f! In addition to the function of electrodes, C is in communication with J25.
``I also have a machine that blows out 1 gas and exhausts the gas outside the reaction chamber 1. It is designed to be electrically insulated and held in this state.

Further, at the top and bottom of the cylindrical conductive substrate 6, there are provided disc-shaped shields (30, 31) as shown in FIG. This shield ζ30.3 'l Let
It is a plate with an opening 32 in the center, and the electrode 5 and the conductor 1'l are connected to each other.
The plates 6 are arranged so as to cover the space where the upper and lower ends of the opposing surfaces exist, and are electrically grounded.

Further, the shielding bodies 30 and 31 are installed in a state where they are spaced apart from the upper and lower ends of the electrodes 5 with gaps dl and d2.
J tJ, so it does not affect the flow of raw material gas. Since this gap dl (12) is set to a distance -1 smaller than the mean free 1j of electrons in the plasma, no abnormal discharge occurs in this region.

Therefore, if the deposition method using the film deposition apparatus "r" shown in FIG. 4 and FIG. If satisfied, the plasma will be concentrated in the vicinity of the conductive closing plate 6, and the diffuser 30.3'1 can prevent the plasma from diffusing to the upper and lower parts of the reaction chamber 1.

In the above description, the same reference numerals are used for the functions of the embodiment shown in FIG. 2 and 101-.

An example of a film forming method using the film forming equipment shown in FIGS. 4 and 5 will now be described.

4 (1) Listen to the pulse 14 until the pressure inside the reaction chamber 1 reaches 10'l-orr! lL/-(', perform tn air from the exhaust pipe 3.

(2) Next, the heater '13 is activated.μ, circle+li shaped S current 111. ! ii. Heat the plate 6 to a temperature in the range of 150°C to 300°C.

The conductive substrate 6 is ll! 1. Using an aluminum drum with a diameter of 130+nu. :,.

(3) Next, use the Parnoa 4 test and make the raw material waste eject from the hole 23 of the electrode 5. In this case, use the original 11 sword and the C thin sword, and set the Lm to 300 S.
1 as CCM, (4) then [, adjust the 1li1 epidemic of valve 4, anti-1i
i5 Set the pressure in the palm'1 to 0.81-o.

(5) Furthermore, we made 10 frequency power supplies! (High-frequency power is applied between the electrode 5 and the conductive blocking plate 6. The applied power is 200 W at a frequency of 13.56 MLlz.
Deatsu Iko. At this time, the inductance element '16 is adjusted to satisfy the above-mentioned resonance line 9 in the same manner as described above.

(6) Although the film was formed in a similar manner, the film was formed in a state where the plasma did not diffuse and was concentrated on one side near the conductive substrate 6. The film formation rate in this case was 22 μm per hour.

When the amorphous silicon film on which the amorphous silicon film was formed was used as an electrophotographic photoreceptor, the photosensitive characteristics were inferior by 1:1.

In other words, when a voltage of -6K V is applied and the surface is charged with a lζ2][1phk electric device, the surface potential of the membrane becomes 250 V, and the black color by a 2 l-ux tangent lamp is In this case, a high sensitivity of 0.6 Lux-3cc was obtained.

In addition, when the film was formed in the same manner as in the -1: period with the shields 30 and 31 removed, the film formation speed was 20 μm per III period. Therefore, C, inductance cable 1
In addition to the resonance effect due to G,
3 High-speed formation due to the plasma confinement effect due to N! I
It has been proven that ll is possible.

In addition, during the example C-L and IQ described in 1, the support stand 12 is 1;
.

Since it rotates at the same time, it is possible to obtain a uniform thickness of 1'l of film to be deposited.

Tokoro'(, H = -913, 1, no sheath heater is generally used, but this sheathed heater (, 1 heating element is wound in a = 1 Ill shape -C) -C1 In terms of high frequency,
It has an inductance and is further capacitively coupled to the support base 12.

Therefore, a part of the high frequency current flowing in the discharge flows into the circuit including the heater 133, and there is a possibility that the resonance condition in front of the heater 133 may be disturbed.

Therefore,? In the example shown in Figure J56, this J:4f inconvenience is resolved.

That is, in FIG. 6, the heater 13 and this
Variable inductance elements 34 and 35 are interposed between the power source 3ζ3 that applies power to the motor 13.

The heater 13 has a heat generating part 36 and a single part 37.
Toga distance I! 11ld3, and is receptively connected to the support base 12 at this portion.

This is shown in an equivalent circuit as shown in FIG.

In FIG. 7, (1) (,5?i) The heating body portion 36 has a large number of series circuits (i = = 1.2...) consisting of a 21-inductor C1, an inductance Li, and a resistor Ri. They are equivalently represented as connected in parallel, and in the figure, 1-9 are shown for convenience.
It is shown as a series circuit of C9[<, and the stray:1 power of heaters 1 and 3 is shown as 02.

Therefore, in this equivalent circuit, the molding current IC on the electrode 5 side is divided into a current IW directed toward the side wall 8, a current directed toward the cyanogenic substrate 6, and a current 11+ directed toward the circuit including the heater 13. If the leakage current 1h to the current 1h is minimized, the effect of neutralizing the iL of Blaz Y' will decrease.

With the lever, as shown in FIG.
．． By adding 1 acid to 35, the shear current becomes 1'
I JL 'J Z> J: Sea urchin, is it Fit's time including Heater 13?゛♂Frequency-impedance can be increased. 1, the inductance blocker 16 is set to 1°.
11: By writing the resonant form f1, IW k0
Article 1'L wo + IQ and O) l-II >
':'Ic>': C: Notactance element 34
, 35, the current applied to the circuit 11, which includes the heater 13, reaches a minimum level.

Therefore, at J3 in C1 FIG. 7, the current 1W, 111 is 11 N and 4T, and is concentrated in the vicinity of the electric bamboo parking board 6, which improves the film forming efficiency.

In the example shown in FIGS. 6 and 7, the same parts as 4311 and the example shown in FIGS.

Therefore, using the film forming apparatus shown in FIGS. 6 and 7 (and the same method as shown in FIGS. 2 and 3),
The film was formed using the film formation procedure 1'1 and the film formation rate was increased to a film thickness of 18 μm per hour.

By the way, in FIG.
During film formation, plasma is generated between the electrodes 5 and 5.
The potential molecule ly between the conductive substrate 6 and the conductive substrate 6 is shown as J in FIG. '! J''eEゎI), the plasma has spread to the conductive substrate 6 side.

Furthermore, in order to increase the film formation rate, the potential on the conductive substrate 6 side should be set to negative polarity as shown in FIG. 9, and the plasma density on the conductive substrate 6 side should be increased. good. this is,
For example, this can be achieved by the 4 film forming apparatus shown in FIG.

That is, the film forming apparatus shown in FIG. 10 is different from that shown in FIG. 2 in that the inductance cable 16 is grounded via a capacitor 37.

If this is shown as an equivalent circuit, it can be seen in FIG.

S4: “In other words, in the circuit including the inductance element 16.”
By directly connecting Siranza 37,]
According to fRcb of 7, a bias voltage of °cI% is generated.

This bias voltage is a self-bias voltage caused by the self-current portion of the alternating current voltage across the iris silanza 37. Accordingly, the positive column 14 can be drawn to the conductive X, i temporary 12 side by this negative binocular pressure, and the film formation rate can be improved.

J3, Figure 10 and Figure 1'1 (13, 2nd
Regarding the same parts shown in Figures and Figure 3, 'Cl1il -
iv bow (J L, C explanation omitted.Here,) 4J-3 is a 1-1 type that has an optimal bias voltage, and has two different types for adjustment: 1 - Preferably a yapacitance fist.

10 and 11) using the film forming apparatus shown in FIGS. 2 and 3. , for example, when performing the procedure ``I and Formation IIIJ'' in d3, a film formation rate of 18.5 μm/hour was obtained.
I can't see the sadness.

Na, 1, Sara
So, the ship is shown in Figure 2 and Figure '13? JJ:
U+'l, IJI! # It is possible to use means of production.

In comparison with the example shown in Figures 12 and 13 (L, and the example K shown in Figure 4), the following y steepness is different, and the square part of T is the same.

First, the inlet 24 is installed in a step on the side wall E3 at the upper end of the reaction chamber 1, and the inlet 2 is connected to the inlet 2 through the valve 7.

In addition, "IJI IJI" 25 is placed on the base 17,
It is connected to the exhaust pipe 3 via a valve 4.

Furthermore, as the heater 13, a rod-shaped lamp heater is used, as is clear from the plan view of FIG. Four lamp heaters 13 are mounted vertically on the inner surface of the cylindrical conductive substrate 6 at a distance from each other. In addition,
Although not shown in the figure, four flapers are also erected facing the lamp heater 13 by hanging the opposite side of the starch. Further, between the mutually opposing surfaces of each lamp heater '13, a magnetic IiV is generated as a means of C-
Permanent Ill 'Or', i 38 -C. This permanent lit 1 stone 38 is a rod-shaped one, and is placed on the support stand 1 while being spaced apart from each other so that adjacent comrades have different polarities.
Four of them are on standby every 20 years.

Therefore, a magnetic field is generated in this permanent magnet 38 as shown in FIG. , the surface of the cylindrical conductive substrate 6) j[The emission intensity of the corner light t1 becomes stronger as a result of the plasma generation efficiency near the surface T.

-) (The film formation rate 1σ is slightly improved.

fI3, the example shown in Figures '12 and 13
The same reference numerals as those in the examples shown in FIGS. 4 and 5 will be used for 1) and 1) for explanations.

However, 1 no (-1 in this example L-;
During the film formation process 1-7, the film formation rate of 25 .mu.m/''I+;'i was achieved.

[Effects of the invention] Below 1. Said J: (,2,according to the present invention',)I)
(i of the rough conductive substrate on which the film is formed)
Concentrate on one side and that fl? It is possible to improve the film formation efficiency, increase the speed of convex growth, and increase the efficiency of film formation.

[Brief explanation of the drawing]

Figure 1 (4) is an explanatory diagram showing the schematic configuration of the apparatus, and Figure 2 is an explanatory diagram of the film forming apparatus for explaining an embodiment of this 5e method. 1 explanatory diagram showing the schematic configuration,
Figure 3 shows the results shown in Figure 2! FIG. 4 is a schematic diagram of a film forming apparatus for explaining another embodiment of the present invention, and FIG. 5 is a schematic diagram of the film forming apparatus shown in FIG. 4. FIG. 6 is a plan view of the main part of the present invention, and FIG. ! Figure 7 is a high frequency circuit diagram of the film forming apparatus shown in Figure 6, and Figures 8 and 9 explain the shortcomings of the conventional film forming method. FIG. 10 is an explanatory diagram showing a schematic configuration of a film forming apparatus μ for explaining still another example of the length IA function of the present invention. 11111 circuit diagram of high frequency etc. of the film apparatus, FIG. 12 shows a schematic longitudinal sectional view of a film forming apparatus U for explaining still another embodiment of the present invention, and FIG. FIG. 2 is a plan view showing the main parts of the membrane device. 1... Reaction chamber, 5... Electrode, 6... Conductive substrate,
10...High frequency power supply, 13...Heater, 16...
-r inductance element, 30.31... continuous body, 33
...Power supply for heater, 37...Capacitor, 38...
・Magnetic helmet light [lower row. Fig. 7 Fig. 1] Fig. 101 Missing 1 Fig. 11

Claims (1)

[Claims] (1) Rearranging the conductive substrate and the electrode so that they face each other in a reduced pressure state, and connecting an AC power source between the conductive substrate and the electrode, In the reaction guide mentioned above? In the method of forming a film containing atoms contained in the raw material gas on the surface of the conductive substrate by generating a plasma of existing raw ore scum, A film forming method characterized by connecting an alternating current power supply through a CC preamble. (2) The inductance element is capable of adjusting the V passitance and lfi of the sheath formed at the rgI between the conductive substrate and the plasma beam. Particular WF The composition set forth in claim 1
How to burn people. (3) The raw stone dregs existing in the reaction chamber is a gas containing silicon, thereby forming an amorphous 11-element n'A film on the surface of the conductive substrate.
The film forming method described in n. (4) A conductive substrate and an electrode are placed facing each other in a reaction chamber under reduced pressure, and this
By connecting an AC power source between the conductive substrate 11 and the source gas and generating plasma of the raw material gas present in the reaction chamber, the surface of the conductive substrate 11 contains atoms contained in the source gas. In the method of forming a film, the conductive substrate is connected to the alternating current power source via an inductance element, and the conductive substrate is connected to the alternating current power source through an inductance element, and a method is provided to prevent plasma diffusion near the end of the opposing surface of the conductive substrate and the electrode. (5) The conductive substrate is a cylindrical substrate, and the electrode is a cylindrical electrode coaxial with and surrounding the cylindrical substrate. In this case, a shield is installed at the end of the cylindrical substrate along the axial direction ().
[The film forming method according to claim 4]. (6) The film forming method according to claim 4 or 511i, characterized in that the electrode and the shield are separated by a distance smaller than the mean free path of electrons in the plasma. (7) Arrange conductive substrates and electrodes in a row in a reaction chamber in one state (1), connect an AC power source between the conductive substrates and the electrodes, and heat the conductive substrates. While heating with a heater connected to a commercial power supply, a film containing atoms contained in the IIi'i-sized gas is formed by irradiating one laser beam of one laser beam existing in the reaction chamber with light. The film forming method includes a3 c1 connecting the conductive substrate to the AC 7R source, connecting the conductive substrate to the first inductance element, and b connecting the heater to the second inductance element. A film forming method that requires 1-] connection to a power source for a heater. (8) The '1st inductance element can be adjusted to 4f so as to minimize the impedance of the series circuit including the sheath capacitance formed between the conductive substrate and the plasma positive column, and the second impedance r is adjusted to a value such that the impedance of the circuit 1a including the heater is maximized. . (9) A conductive substrate and an electrode are rearranged to face each other in a reaction chamber under reduced pressure, and an AC power source is connected between the conductive substrate and the electrode. By avoiding the generation of the gas plasma 7, the conductive substrate is connected to the conductive substrate via an inductance element and a condenser. What about the exchange? (10) The silane is connected to a Ui source, the value of which can be adjusted in order to provide a bias potential to the conductive substrate. The film forming method described in 91fl. (11) A conductive substrate and an electrode are placed facing each other in a reaction chamber in a reduced state, and an AC power source is connected between the conductive substrate and the electrode. , the source η present in the reaction chamber
In a method for forming a film containing atoms contained in the raw material gas on the surface of the conductive substrate, the method includes generating a plasma of 3+ gas. A film forming method characterized by connecting to the alternating current power supply and arranging a magnetic field generating means facing the electrode with the conductive substrate interposed therebetween. The substrate is a cylindrical substrate, and the electrodes are cylindrical electrodes surrounding the cylindrical substrate.
Qh ￥r is characterized in that a plurality of 141!1Ii1 generation means are arranged on the inner surface of this cylindrical substrate.
A film forming method according to claims 111 and 1111. (13) The film forming method according to claim ij+fi or '+2, wherein the magnetic field generating means is a permanent magnet.