JPS60111419A - グロー放電の陽光柱内のガスから無定形半導体材料層を被着する方法 - Google Patents

グロー放電の陽光柱内のガスから無定形半導体材料層を被着する方法

Info

Publication number
JPS60111419A
JPS60111419A JP59226632A JP22663284A JPS60111419A JP S60111419 A JPS60111419 A JP S60111419A JP 59226632 A JP59226632 A JP 59226632A JP 22663284 A JP22663284 A JP 22663284A JP S60111419 A JPS60111419 A JP S60111419A
Authority
JP
Japan
Prior art keywords
positive column
conductive layer
substrate
axis
glow discharge
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59226632A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0533526B2 (enExample
Inventor
ジヨセフ　ジヨン　ハナク
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RCA Corp filed Critical RCA Corp
Publication of JPS60111419A publication Critical patent/JPS60111419A/ja
Publication of JPH0533526B2 publication Critical patent/JPH0533526B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/02428—Structure
    • H01L21/0243—Surface structure
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02422—Non-crystalline insulating materials, e.g. glass, polymers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H10P14/24—
    • H10P14/2922—
    • H10P14/2925—
    • H10P14/3411—

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Materials Engineering (AREA)
  • Plasma & Fusion (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Photovoltaic Devices (AREA)
JP59226632A 1983-10-27 1984-10-26 グロー放電の陽光柱内のガスから無定形半導体材料層を被着する方法 Granted JPS60111419A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US546047 1983-10-27
US06/546,047 US4481230A (en) 1983-10-27 1983-10-27 Method of depositing a semiconductor layer from a glow discharge

Publications (2)

Publication Number Publication Date
JPS60111419A true JPS60111419A (ja) 1985-06-17
JPH0533526B2 JPH0533526B2 (enExample) 1993-05-19

Family

ID=24178640

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59226632A Granted JPS60111419A (ja) 1983-10-27 1984-10-26 グロー放電の陽光柱内のガスから無定形半導体材料層を被着する方法

Country Status (4)

Country Link
US (1) US4481230A (enExample)
JP (1) JPS60111419A (enExample)
KR (1) KR930002577B1 (enExample)
GB (1) GB2148947B (enExample)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6066422A (ja) * 1983-09-21 1985-04-16 Kanegafuchi Chem Ind Co Ltd 半導体製造法
US6784033B1 (en) 1984-02-15 2004-08-31 Semiconductor Energy Laboratory Co., Ltd. Method for the manufacture of an insulated gate field effect semiconductor device
JPH0752718B2 (ja) * 1984-11-26 1995-06-05 株式会社半導体エネルギー研究所 薄膜形成方法
US6786997B1 (en) 1984-11-26 2004-09-07 Semiconductor Energy Laboratory Co., Ltd. Plasma processing apparatus
JPS61198685A (ja) * 1985-02-27 1986-09-03 Kanegafuchi Chem Ind Co Ltd 半導体装置の製法
GB8927377D0 (en) * 1989-12-04 1990-01-31 Univ Edinburgh Improvements in and relating to amperometric assays
CN1135635C (zh) * 1994-03-25 2004-01-21 阿莫科/恩龙太阳公司 增强光电器件和电子器件的光和电特性的等离子淀积工艺
US6320261B1 (en) 1998-04-21 2001-11-20 Micron Technology, Inc. High aspect ratio metallization structures for shallow junction devices, and methods of forming the same
US6121134A (en) 1998-04-21 2000-09-19 Micron Technology, Inc. High aspect ratio metallization structures and processes for fabricating the same
US6077722A (en) * 1998-07-14 2000-06-20 Bp Solarex Producing thin film photovoltaic modules with high integrity interconnects and dual layer contacts
US20030044539A1 (en) * 2001-02-06 2003-03-06 Oswald Robert S. Process for producing photovoltaic devices
US7799612B2 (en) * 2007-06-25 2010-09-21 Spansion Llc Process applying die attach film to singulated die
JPWO2009020073A1 (ja) * 2007-08-06 2010-11-04 シャープ株式会社 薄膜光電変換モジュールの製造方法および製造装置
CN108447800B (zh) * 2018-01-31 2019-12-10 北京铂阳顶荣光伏科技有限公司 薄膜电池的制造方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5952835A (ja) * 1982-09-20 1984-03-27 Semiconductor Energy Lab Co Ltd プラズマ気相反応装置
JPS5996778A (ja) * 1982-11-24 1984-06-04 Semiconductor Energy Lab Co Ltd 光電変換装置作製方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4064521A (en) * 1975-07-28 1977-12-20 Rca Corporation Semiconductor device having a body of amorphous silicon
US4315096A (en) * 1980-07-25 1982-02-09 Eastman Kodak Company Integrated array of photovoltaic cells having minimized shorting losses

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5952835A (ja) * 1982-09-20 1984-03-27 Semiconductor Energy Lab Co Ltd プラズマ気相反応装置
JPS5996778A (ja) * 1982-11-24 1984-06-04 Semiconductor Energy Lab Co Ltd 光電変換装置作製方法

Also Published As

Publication number Publication date
US4481230A (en) 1984-11-06
GB2148947A (en) 1985-06-05
GB8426764D0 (en) 1984-11-28
KR930002577B1 (ko) 1993-04-03
KR850003062A (ko) 1985-05-28
GB2148947B (en) 1987-02-04
JPH0533526B2 (enExample) 1993-05-19

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