JPS60110148A - Resin-sealed type semiconductor device - Google Patents
Resin-sealed type semiconductor deviceInfo
- Publication number
- JPS60110148A JPS60110148A JP58218265A JP21826583A JPS60110148A JP S60110148 A JPS60110148 A JP S60110148A JP 58218265 A JP58218265 A JP 58218265A JP 21826583 A JP21826583 A JP 21826583A JP S60110148 A JPS60110148 A JP S60110148A
- Authority
- JP
- Japan
- Prior art keywords
- resin
- semiconductor device
- thermal conductivity
- sealing resin
- paste
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/42—Fillings or auxiliary members in containers or encapsulations selected or arranged to facilitate heating or cooling
- H01L23/433—Auxiliary members in containers characterised by their shape, e.g. pistons
- H01L23/4334—Auxiliary members in encapsulations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Abstract
Description
【発明の詳細な説明】 産業上の利用分野 本発明は扮脂封止された半導体装置に関する。[Detailed description of the invention] Industrial applications TECHNICAL FIELD The present invention relates to a semiconductor device encapsulated with resin.
従来例の構成とその問題点
近年、半導体装置のパッケージ形態としてはコス） 、
：ｉｊｉ：産性向で有利な樹脂封止型が玉流をしめて
いる。また、高密度実装を実現するために、その外形は
より小型、薄型化が進んでいる。その−例であるフラッ
トパッケージ型を例にとって、従来装置の構造を第１図
を参照して説明する。半導体チップ１が、鉄ニッケルを
生体とする材料からなる載置板２に固定され、同じ材料
からなるリード３の内端と通常、金細線４によって電気
的に接続され、リードの外端が突出したかたちで外囲封
止樹脂６によって封止されている０このような構造の半
導体装置において、放熱特性を改善する手段としては、
たとえば、
（１） 載置板２およびリード３の材料として高熱伝導
度の銅を主体とする合金を用いる。Conventional configurations and their problemsIn recent years, the packaging format for semiconductor devices has become cost-effective.
:iji: The resin-sealed type, which is advantageous in terms of productivity, is the most popular. In addition, in order to achieve high-density packaging, their external dimensions are becoming smaller and thinner. Taking a flat package type as an example, the structure of a conventional device will be explained with reference to FIG. A semiconductor chip 1 is fixed to a mounting plate 2 made of iron-nickel as a living material, and electrically connected to the inner ends of leads 3 made of the same material, usually by thin gold wires 4, with the outer ends of the leads protruding. In a semiconductor device having such a structure, which is sealed with the outer sealing resin 6, as a means for improving the heat dissipation characteristics,
For example, (1) As the material of the mounting plate 2 and the leads 3, an alloy mainly composed of copper with high thermal conductivity is used.
（功 外囲封止樹脂として熱伝導度の高い材料を用いる
。(Use a material with high thermal conductivity as the outer sealing resin.
（′４ 素子載置板の下に、封止仙脂よりも大なる熱伝
導度を有する。金属あるいはセラミックの板を埋設する
等があげられる。('4) It has a higher thermal conductivity than the sealing resin under the element mounting plate. A metal or ceramic plate may be buried.
これらの手段によれば、それぞれ、次にあげるような不
都合が避けられない。According to these means, the following disadvantages are unavoidable.
（１）鉄−ニッケル合金に比べて機械的強度に乏しく、
リードを余り細くできない。また、完成後リードの変形
、破損事故が生じやすい。(1) Poor mechanical strength compared to iron-nickel alloys,
The lead cannot be made too thin. In addition, deformation and breakage of the leads are likely to occur after completion.
（→ 結晶性シリカを多く含む材料を使うことになり、
金型摩耗がはげしい。(→ Materials containing a large amount of crystalline silica will be used,
Severe mold wear.
（３１仮相を載置板２の裏面に接着するか、あるいは、
金型の底面上に置く煩雑な工程が必要となるＯ
発明の目的
本発明は、上記問題点をことごとく解消し、簡素な構造
で、十分に放熱特性を向上させ得る樹脂封止型半導体装
置を供給することを目的とする。(Gluing the temporary phase 31 to the back surface of the mounting plate 2, or
OBJECT OF THE INVENTION The present invention solves all of the above problems and provides a resin-sealed semiconductor device that has a simple structure and can sufficiently improve heat dissipation characteristics. The purpose is to supply.
発明の構成
本発明は、半導体チップ載置板の裏面に、外囲封止樹脂
相よりも高い熱伝導度を有するペースト材が刺着されて
いる樹脂封止型半導体装置であり、これによれば、リー
ドフレームや封止樹脂材料をかえることなく、また、高
熱伝導度材からなる板を埋設するだめの煩雑な工程を用
いることなく、放熱特性のすぐれた樹脂封止型半導体装
置が得られる。Structure of the Invention The present invention is a resin-sealed semiconductor device in which a paste material having higher thermal conductivity than the surrounding sealing resin phase is stuck to the back surface of a semiconductor chip mounting plate. For example, a resin-encapsulated semiconductor device with excellent heat dissipation characteristics can be obtained without changing the lead frame or the sealing resin material, and without using the complicated process of embedding a plate made of a high thermal conductivity material. .
実施例の説明
第２図は本発明の一実施例による樹脂封止型半導体装置
の構造を示す断面図である。この装置は、半導体チップ
１が同半導体テップ載置板２の表面に固定され、リード
３の内端と、金細線４によって電気的に接続され、リー
ド３の外端が外部リード体として突出したかたちで外囲
封止樹脂５によって封止されていることのほかに、素子
載置面２の裏面に、封止樹脂よりも高熱伝導度ペースト
材６を付着させている。ペースト材６は、たとえば銀の
粉末をエポキシ樹脂に混ぜたものを塗布、硬化させて形
成される。ペースト材６の塗布は、スタンピング、ある
いは、スクＩＩ−ン印刷によって容易に行なうことがで
きる。塗布する厚みとしては、最終的にペースト材を覆
う封止樹脂の厚みが極度にうずくならない範囲で極力厚
くするのが好ましい。またペースト材６としては銀−エ
ポキシ以外に金、アルミニウム、銅などの金属や、アル
ミナ、ベリリアなどの金属酸化物を素材と゛する焼結体
、例えばセラミックの粉末を、エポキシ樹脂に混合した
ものでもよい。また樹脂として、ポリイミド樹脂を用い
ると耐熱性のすぐれたペースト拐となる。以上述べたよ
うな構造にすれば、半導体素子載置板の裏面に封止樹脂
よりも高い熱伝導度を有するペースト材（たとえば通常
の封止樹脂では１３〜１８ Ｘ １０ ｃａｌｌｏａｅ
ＳＫ ＊ ”Ｃに対して銀−エポキシ系ペーストでは
５０Ｘ１０ｃａｌ／ＣＩＬ ａ ｓｔ’ｃ・”Ｃ）が塗
布されたことにより、素子で発生ずる熱が載置板２とペ
ースト材６とを伝わって、（０１脂外囲器表面近くまで
効率よく達するので、放熱＋１！Ｊ性のすぐれた樹脂封
止型半導体装置が得られる（）
発明の効果
本発明によれば、半導体チップ載置板の裏面に、外囲封
止樹脂材よりも高熱伝導度を有するペーストｋＡが塗布
されており、これによれば、従来例のようＶＣｌ例えば
、リードフレームや封止樹脂の材料をかえたり、チップ
載置板の下に埋設する板材を準備することなしに、すぐ
れた放熱特性を有する樹脂封止型半導体装置が実現でき
る。また、この発明は実施例で挙げたフラットパッケー
ジに限らず、ＤＩＬ型をはじめプラスチックチップキャ
リヤやＳｏ（ａｍａｌｌ−ｏｕｔｌｉｎｅ）パッケージ
を含むすべての樹脂封止型半導体装置に応用できる。DESCRIPTION OF EMBODIMENTS FIG. 2 is a sectional view showing the structure of a resin-sealed semiconductor device according to an embodiment of the present invention. In this device, a semiconductor chip 1 is fixed to the surface of a semiconductor chip mounting plate 2, electrically connected to the inner ends of leads 3 by thin gold wires 4, and the outer ends of the leads 3 protrude as external lead bodies. In addition to being sealed with the outer sealing resin 5, a paste material 6 with higher thermal conductivity than the sealing resin is adhered to the back surface of the element mounting surface 2. The paste material 6 is formed by applying and curing a mixture of silver powder and epoxy resin, for example. The paste material 6 can be easily applied by stamping or screen printing. The thickness of the coating is preferably as large as possible without causing excessive tingling in the thickness of the sealing resin that ultimately covers the paste material. In addition to silver-epoxy, the paste material 6 may also be a sintered body made of metals such as gold, aluminum, copper, or metal oxides such as alumina or beryllia, such as ceramic powder mixed with epoxy resin. good. Furthermore, if polyimide resin is used as the resin, the paste will have excellent heat resistance. With the structure described above, a paste material having a higher thermal conductivity than the sealing resin (for example, a normal sealing resin has a thickness of 13 to 18
By applying 50X10 cal/CIL a st'c/''C) of silver-epoxy paste to SK*''C, the heat generated in the element is transmitted through the mounting plate 2 and the paste material 6, (Since the heat reaches the surface of the 01 resin envelope efficiently, it is possible to obtain a resin-sealed semiconductor device with excellent heat dissipation by +1! , a paste kA having a higher thermal conductivity than the surrounding sealing resin material is applied. According to this, unlike the conventional example, VCl, for example, the materials of the lead frame and sealing resin can be changed, and the chip mounting plate A resin-sealed semiconductor device with excellent heat dissipation characteristics can be realized without preparing a plate material to be buried underneath.In addition, this invention is applicable not only to the flat package mentioned in the embodiment, but also to plastic packages such as the DIL type. It can be applied to all resin-sealed semiconductor devices including chip carriers and So (amall-outline) packages.
第１図は従来の樹脂封止型半導体装置（フラットパッケ
ージ）の断面図、第２図は本発明の一実施例装置の断面
図である。
１・・−・−・半導体チップ、２−・・・・・半導体チ
ップ載置板、３・・・・−・リード、４−・−・・金細
線、５−・−・・・外囲封止樹脂、６・・・・・・銀ペ
ースト。FIG. 1 is a sectional view of a conventional resin-sealed semiconductor device (flat package), and FIG. 2 is a sectional view of a device according to an embodiment of the present invention. 1-----Semiconductor chip, 2---Semiconductor chip mounting plate, 3---Lead, 4---Thin gold wire, 5---Outer enclosure Sealing resin, 6...Silver paste.
Claims (1)
樹脂月よりも高い熱伝導度を有するペースト材が付着ラ
されていることを特徴とする樹脂封止型半導体装１１
’ｌ’、 ＋１ （′４ ペースト４：４が金属粉を含む樹脂でなる特許
請求の４１１）間第１項に記載の樹脂封止型半導体装置
。 （→ ペースト材が金属酸化物粉を含む樹脂でなる’Ｉ
”Ｊ’ ＋／ｌ’ 請求の範囲第１項に記載の樹脂封止
型半導体装置。(1) A resin-sealed semiconductor device 11 characterized in that a paste material having a higher thermal conductivity than the outer sealing resin is adhered to the back side of the Gl' conductor mounting plate.
'l', +1 ('4) The resin-sealed semiconductor device according to claim 411, wherein the paste 4:4 is a resin containing metal powder. (→ Paste material is made of resin containing metal oxide powder)
"J'+/l'" The resin-sealed semiconductor device according to claim 1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58218265A JPS60110148A (en) | 1983-11-18 | 1983-11-18 | Resin-sealed type semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58218265A JPS60110148A (en) | 1983-11-18 | 1983-11-18 | Resin-sealed type semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS60110148A true JPS60110148A (en) | 1985-06-15 |
Family
ID=16717159
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58218265A Pending JPS60110148A (en) | 1983-11-18 | 1983-11-18 | Resin-sealed type semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60110148A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0315852A2 (en) * | 1987-11-07 | 1989-05-17 | BASF Aktiengesellschaft | Printed circuit board with improved heat conductivity |
-
1983
- 1983-11-18 JP JP58218265A patent/JPS60110148A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0315852A2 (en) * | 1987-11-07 | 1989-05-17 | BASF Aktiengesellschaft | Printed circuit board with improved heat conductivity |
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