JPS60109289A - 不揮発性メモリ - Google Patents

不揮発性メモリ

Info

Publication number
JPS60109289A
JPS60109289A JP21687983A JP21687983A JPS60109289A JP S60109289 A JPS60109289 A JP S60109289A JP 21687983 A JP21687983 A JP 21687983A JP 21687983 A JP21687983 A JP 21687983A JP S60109289 A JPS60109289 A JP S60109289A
Authority
JP
Japan
Prior art keywords
region
gate electrode
floating gate
insulating film
nonvolatile memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP21687983A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0315354B2 (enrdf_load_stackoverflow
Inventor
Masaaki Kamiya
昌明 神谷
Yoshikazu Kojima
芳和 小島
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Instruments Inc
Original Assignee
Seiko Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Instruments Inc filed Critical Seiko Instruments Inc
Priority to JP21687983A priority Critical patent/JPS60109289A/ja
Publication of JPS60109289A publication Critical patent/JPS60109289A/ja
Publication of JPH0315354B2 publication Critical patent/JPH0315354B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Non-Volatile Memory (AREA)
JP21687983A 1983-11-17 1983-11-17 不揮発性メモリ Granted JPS60109289A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP21687983A JPS60109289A (ja) 1983-11-17 1983-11-17 不揮発性メモリ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP21687983A JPS60109289A (ja) 1983-11-17 1983-11-17 不揮発性メモリ

Publications (2)

Publication Number Publication Date
JPS60109289A true JPS60109289A (ja) 1985-06-14
JPH0315354B2 JPH0315354B2 (enrdf_load_stackoverflow) 1991-02-28

Family

ID=16695340

Family Applications (1)

Application Number Title Priority Date Filing Date
JP21687983A Granted JPS60109289A (ja) 1983-11-17 1983-11-17 不揮発性メモリ

Country Status (1)

Country Link
JP (1) JPS60109289A (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01304784A (ja) * 1988-06-02 1989-12-08 Seiko Instr Inc 半導体不揮発性メモリの製造方法
KR100356469B1 (ko) * 1999-12-29 2002-10-18 주식회사 하이닉스반도체 플래쉬 메모리 소자의 제조방법

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01304784A (ja) * 1988-06-02 1989-12-08 Seiko Instr Inc 半導体不揮発性メモリの製造方法
KR100356469B1 (ko) * 1999-12-29 2002-10-18 주식회사 하이닉스반도체 플래쉬 메모리 소자의 제조방법

Also Published As

Publication number Publication date
JPH0315354B2 (enrdf_load_stackoverflow) 1991-02-28

Similar Documents

Publication Publication Date Title
US7071050B2 (en) Semiconductor integrated circuit device having single-element type non-volatile memory elements
US4822750A (en) MOS floating gate memory cell containing tunneling diffusion region in contact with drain and extending under edges of field oxide
US6414353B1 (en) TFT with partially depleted body
JPS62119796A (ja) Eepromメモリセル及びその駆動方式
US5811855A (en) SOI combination body tie
US6044018A (en) Single-poly flash memory cell for embedded application and related methods
JPS637031B2 (enrdf_load_stackoverflow)
US7932551B2 (en) Nonvolatile memory device and method of fabricating the same comprising a dual fin structure
JPH07183469A (ja) 半導体装置及び半導体装置のオペレーティング方法
JPH0210678Y2 (enrdf_load_stackoverflow)
KR100364040B1 (ko) 반도체 기억 장치 및 그 제조 방법
US7696556B2 (en) Nonvolatile memory devices including high-voltage MOS transistors with floated drain-side auxiliary gates and methods of fabricating the same
JPH11330280A (ja) チャネル消去/書込によるフラッシュメモリ―セル構造の製造方法およびその操作方法
KR100366599B1 (ko) 플래시이피롬어레이에저저항피-웰을제공하는고에너지매몰층임플란트
US5332914A (en) EEPROM cell structure and architecture with increased capacitance and with programming and erase terminals shared between several cells
US5304505A (en) Process for EEPROM cell structure and architecture with increased capacitance and with programming and erase terminals shared between several cells
EP0700097B1 (en) A self-aligned buried channel/junction stacked gate flash memory cell
US5189497A (en) Semiconductor memory device
US4305083A (en) Single junction charge injector floating gate memory cell
TW408493B (en) NVRAM cell using sharp tip for tunnel erase
JPS60109289A (ja) 不揮発性メモリ
US5508955A (en) Electronically erasable-programmable memory cell having buried bit line
JP2951292B2 (ja) 相補型半導体装置及びその製造方法
US5057446A (en) Method of making an EEPROM with improved capacitive coupling between control gate and floating gate
US4761679A (en) Complementary silicon-on-insulator lateral insulated gate rectifiers