JPH0315354B2 - - Google Patents
Info
- Publication number
- JPH0315354B2 JPH0315354B2 JP21687983A JP21687983A JPH0315354B2 JP H0315354 B2 JPH0315354 B2 JP H0315354B2 JP 21687983 A JP21687983 A JP 21687983A JP 21687983 A JP21687983 A JP 21687983A JP H0315354 B2 JPH0315354 B2 JP H0315354B2
- Authority
- JP
- Japan
- Prior art keywords
- region
- gate electrode
- insulating film
- nonvolatile memory
- floating gate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000758 substrate Substances 0.000 claims description 18
- 238000002955 isolation Methods 0.000 claims description 9
- 239000004065 semiconductor Substances 0.000 claims description 4
- 238000010586 diagram Methods 0.000 description 6
- 239000012535 impurity Substances 0.000 description 4
- 238000005468 ion implantation Methods 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 230000005684 electric field Effects 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
Landscapes
- Non-Volatile Memory (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21687983A JPS60109289A (ja) | 1983-11-17 | 1983-11-17 | 不揮発性メモリ |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21687983A JPS60109289A (ja) | 1983-11-17 | 1983-11-17 | 不揮発性メモリ |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60109289A JPS60109289A (ja) | 1985-06-14 |
| JPH0315354B2 true JPH0315354B2 (enrdf_load_stackoverflow) | 1991-02-28 |
Family
ID=16695340
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP21687983A Granted JPS60109289A (ja) | 1983-11-17 | 1983-11-17 | 不揮発性メモリ |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60109289A (enrdf_load_stackoverflow) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2717543B2 (ja) * | 1988-06-02 | 1998-02-18 | セイコーインスツルメンツ株式会社 | 半導体不揮発性メモリの製造方法 |
| KR100356469B1 (ko) * | 1999-12-29 | 2002-10-18 | 주식회사 하이닉스반도체 | 플래쉬 메모리 소자의 제조방법 |
-
1983
- 1983-11-17 JP JP21687983A patent/JPS60109289A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS60109289A (ja) | 1985-06-14 |
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