JPS60108312A - けい化水素の超精製方法 - Google Patents

けい化水素の超精製方法

Info

Publication number
JPS60108312A
JPS60108312A JP21318183A JP21318183A JPS60108312A JP S60108312 A JPS60108312 A JP S60108312A JP 21318183 A JP21318183 A JP 21318183A JP 21318183 A JP21318183 A JP 21318183A JP S60108312 A JPS60108312 A JP S60108312A
Authority
JP
Japan
Prior art keywords
hydrogen silicide
monosilane
silicon
ultra
epitaxial growth
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP21318183A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6212169B2 (enrdf_load_stackoverflow
Inventor
Osamu Kuboi
久保井　収
Junji Izawa
井沢　淳二
Yoshifumi Yatsurugi
八釼　吉文
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumco Techxiv Corp
Original Assignee
Komatsu Electronic Metals Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Komatsu Electronic Metals Co Ltd filed Critical Komatsu Electronic Metals Co Ltd
Priority to JP21318183A priority Critical patent/JPS60108312A/ja
Publication of JPS60108312A publication Critical patent/JPS60108312A/ja
Publication of JPS6212169B2 publication Critical patent/JPS6212169B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Silicon Compounds (AREA)
  • Chemical Vapour Deposition (AREA)
JP21318183A 1983-11-15 1983-11-15 けい化水素の超精製方法 Granted JPS60108312A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP21318183A JPS60108312A (ja) 1983-11-15 1983-11-15 けい化水素の超精製方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP21318183A JPS60108312A (ja) 1983-11-15 1983-11-15 けい化水素の超精製方法

Publications (2)

Publication Number Publication Date
JPS60108312A true JPS60108312A (ja) 1985-06-13
JPS6212169B2 JPS6212169B2 (enrdf_load_stackoverflow) 1987-03-17

Family

ID=16634882

Family Applications (1)

Application Number Title Priority Date Filing Date
JP21318183A Granted JPS60108312A (ja) 1983-11-15 1983-11-15 けい化水素の超精製方法

Country Status (1)

Country Link
JP (1) JPS60108312A (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003286574A (ja) * 2002-03-29 2003-10-10 Hitachi Kokusai Electric Inc 基板処理装置および基板処理方法
CN102502653A (zh) * 2011-12-14 2012-06-20 浙江赛林硅业有限公司 一种生产高纯乙硅烷的系统及其方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003286574A (ja) * 2002-03-29 2003-10-10 Hitachi Kokusai Electric Inc 基板処理装置および基板処理方法
CN102502653A (zh) * 2011-12-14 2012-06-20 浙江赛林硅业有限公司 一种生产高纯乙硅烷的系统及其方法

Also Published As

Publication number Publication date
JPS6212169B2 (enrdf_load_stackoverflow) 1987-03-17

Similar Documents

Publication Publication Date Title
TW583015B (en) Method for purifying semiconductor gases
GB809250A (en) Improvements in or relating to processes and apparatus for the production of ultra-pure substances
JP2002523707A (ja) 吸着剤前処理を利用した吸着型気体貯蔵及び計量分配システムの製造方法
JPS59162117A (ja) 珪素棒の製造方法
EP1867604B1 (en) Method for purification of disilicon hexachloride and high purity disilicon hexachloride
WO2003059816A1 (en) HIGHLY PURE ULTRA-FINE SiOX POWDER AND METHOD FOR PRODUCTION THEREOF
JPS60108312A (ja) けい化水素の超精製方法
TW200406501A (en) Deposition of a solid by thermal decomposition of a gaseous substance in a cup reactor
JPH02153815A (ja) クロロポリシランの精製方法
JPS60176911A (ja) 高純度白燐の製造方法
JPH04318920A (ja) 気相結晶成長装置
JPH01103901A (ja) 水素の精製方法
CA2938453C (en) Method for producing polycrystalline silicon
JP2021500305A (ja) クロロシランから不純物を除去するための方法及び装置
Pakdee et al. Effects of catalyst on carbon nanotubes synthesized by thermal chemical vapor deposition method
US3006734A (en) Process for preparing pure silicon
CN115432677B (zh) 一种撞击流耦合流化床制备高质量氮化硅粉体的系统及方法
CN115432676B (zh) 一种多级流化床制备高质量氮化硅粉体的系统及方法
US3232702A (en) Selective removal of boron compounds from silane
JP6941424B2 (ja) モノメチルヒドラジンガスの精製方法
RU2052380C1 (ru) Способ получения тетрафторида бората лития
Mohiuddin et al. Chemical Vapor Deposition Growth of Composite Silicon-Silica Nanowires from Silicon Monoxide Vapor
Hwang et al. Non-catalytic direct synthesis of graphene on Si (111) wafers by using inductively-coupled plasma chemical vapor deposition
JPH04276076A (ja) 化学気相成長法
GB878763A (en) Improvements in and relating to a process and apparatus for the production of highly-pure silicon