JPS60106170A - 過電圧保護機能付サイリスタ - Google Patents

過電圧保護機能付サイリスタ

Info

Publication number
JPS60106170A
JPS60106170A JP58214601A JP21460183A JPS60106170A JP S60106170 A JPS60106170 A JP S60106170A JP 58214601 A JP58214601 A JP 58214601A JP 21460183 A JP21460183 A JP 21460183A JP S60106170 A JPS60106170 A JP S60106170A
Authority
JP
Japan
Prior art keywords
thyristor
pilot
base layer
layer
emitter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58214601A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0210585B2 (cs
Inventor
Yoshihiro Yamaguchi
好広 山口
Hiromichi Ohashi
弘通 大橋
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP58214601A priority Critical patent/JPS60106170A/ja
Publication of JPS60106170A publication Critical patent/JPS60106170A/ja
Publication of JPH0210585B2 publication Critical patent/JPH0210585B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H10D18/211—Thyristors having built-in localised breakdown or breakover regions, e.g. self-protected against destructive spontaneous firing

Landscapes

  • Thyristors (AREA)
JP58214601A 1983-11-15 1983-11-15 過電圧保護機能付サイリスタ Granted JPS60106170A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58214601A JPS60106170A (ja) 1983-11-15 1983-11-15 過電圧保護機能付サイリスタ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58214601A JPS60106170A (ja) 1983-11-15 1983-11-15 過電圧保護機能付サイリスタ

Publications (2)

Publication Number Publication Date
JPS60106170A true JPS60106170A (ja) 1985-06-11
JPH0210585B2 JPH0210585B2 (cs) 1990-03-08

Family

ID=16658408

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58214601A Granted JPS60106170A (ja) 1983-11-15 1983-11-15 過電圧保護機能付サイリスタ

Country Status (1)

Country Link
JP (1) JPS60106170A (cs)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5413275A (en) * 1977-07-01 1979-01-31 Internatl Rectifier Corp Japan Ltd Controlled rectifying element of semiconductor
JPS5473585A (en) * 1977-11-25 1979-06-12 Nec Corp Gate turn-off thyristor
JPS5515202A (en) * 1978-07-19 1980-02-02 Toshiba Corp Semiconductor controlling rectifier
JPS583283A (ja) * 1981-06-30 1983-01-10 Toshiba Corp サイリスタ
JPS583282A (ja) * 1981-06-30 1983-01-10 Toshiba Corp サイリスタ

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5413275A (en) * 1977-07-01 1979-01-31 Internatl Rectifier Corp Japan Ltd Controlled rectifying element of semiconductor
JPS5473585A (en) * 1977-11-25 1979-06-12 Nec Corp Gate turn-off thyristor
JPS5515202A (en) * 1978-07-19 1980-02-02 Toshiba Corp Semiconductor controlling rectifier
JPS583283A (ja) * 1981-06-30 1983-01-10 Toshiba Corp サイリスタ
JPS583282A (ja) * 1981-06-30 1983-01-10 Toshiba Corp サイリスタ

Also Published As

Publication number Publication date
JPH0210585B2 (cs) 1990-03-08

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