JPS60103350A - フオトマスクブランク - Google Patents
フオトマスクブランクInfo
- Publication number
- JPS60103350A JPS60103350A JP58212136A JP21213683A JPS60103350A JP S60103350 A JPS60103350 A JP S60103350A JP 58212136 A JP58212136 A JP 58212136A JP 21213683 A JP21213683 A JP 21213683A JP S60103350 A JPS60103350 A JP S60103350A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- carbonization
- chromium
- laminated
- etching
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000011651 chromium Substances 0.000 claims abstract description 25
- 238000003763 carbonization Methods 0.000 claims abstract description 14
- 239000000758 substrate Substances 0.000 claims abstract description 14
- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 claims abstract description 10
- 229910000423 chromium oxide Inorganic materials 0.000 claims abstract description 10
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 23
- 229910052804 chromium Inorganic materials 0.000 claims description 20
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 7
- 229910052799 carbon Inorganic materials 0.000 claims description 7
- 238000005530 etching Methods 0.000 abstract description 24
- 239000004065 semiconductor Substances 0.000 abstract description 5
- 238000004519 manufacturing process Methods 0.000 abstract description 4
- 238000004544 sputter deposition Methods 0.000 abstract description 4
- 239000011521 glass Substances 0.000 abstract description 3
- 238000010030 laminating Methods 0.000 abstract description 3
- 239000008246 gaseous mixture Substances 0.000 abstract 2
- 238000000034 method Methods 0.000 description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- VLTRZXGMWDSKGL-UHFFFAOYSA-N perchloric acid Chemical compound OCl(=O)(=O)=O VLTRZXGMWDSKGL-UHFFFAOYSA-N 0.000 description 2
- 239000000725 suspension Substances 0.000 description 2
- 101100008044 Caenorhabditis elegans cut-1 gene Proteins 0.000 description 1
- 244000302512 Momordica charantia Species 0.000 description 1
- 235000009811 Momordica charantia Nutrition 0.000 description 1
- 230000003373 anti-fouling effect Effects 0.000 description 1
- 150000001844 chromium Chemical class 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 101150020073 cut-2 gene Proteins 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- YNKVVRHAQCDJQM-UHFFFAOYSA-P diazanium dinitrate Chemical compound [NH4+].[NH4+].[O-][N+]([O-])=O.[O-][N+]([O-])=O YNKVVRHAQCDJQM-UHFFFAOYSA-P 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000006260 foam Substances 0.000 description 1
- 238000011534 incubation Methods 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 239000005361 soda-lime glass Substances 0.000 description 1
- 239000002689 soil Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/88—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof prepared by photographic processes for production of originals simulating relief
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58212136A JPS60103350A (ja) | 1983-11-11 | 1983-11-11 | フオトマスクブランク |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58212136A JPS60103350A (ja) | 1983-11-11 | 1983-11-11 | フオトマスクブランク |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60103350A true JPS60103350A (ja) | 1985-06-07 |
| JPS6237386B2 JPS6237386B2 (enrdf_load_stackoverflow) | 1987-08-12 |
Family
ID=16617483
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58212136A Granted JPS60103350A (ja) | 1983-11-11 | 1983-11-11 | フオトマスクブランク |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60103350A (enrdf_load_stackoverflow) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63244037A (ja) * | 1987-03-31 | 1988-10-11 | Hoya Corp | フオトマスクブランク |
| EP1241524A3 (en) * | 2001-02-13 | 2003-05-07 | Shin-Etsu Chemical Co., Ltd. | Photomask blank, Photomask and method of manufacture |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6301383B2 (ja) * | 2015-03-27 | 2018-03-28 | Hoya株式会社 | フォトマスクブランク及びこれを用いたフォトマスクの製造方法、並びに表示装置の製造方法 |
-
1983
- 1983-11-11 JP JP58212136A patent/JPS60103350A/ja active Granted
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63244037A (ja) * | 1987-03-31 | 1988-10-11 | Hoya Corp | フオトマスクブランク |
| EP1241524A3 (en) * | 2001-02-13 | 2003-05-07 | Shin-Etsu Chemical Co., Ltd. | Photomask blank, Photomask and method of manufacture |
| KR100651117B1 (ko) * | 2001-02-13 | 2006-11-29 | 신에쓰 가가꾸 고교 가부시끼가이샤 | 포토마스크 블랭크, 포토마스크 및 이들의 제조 방법 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6237386B2 (enrdf_load_stackoverflow) | 1987-08-12 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4363846A (en) | Photomask and photomask blank | |
| KR102297223B1 (ko) | 위상 시프트 마스크 블랭크 및 그 제조 방법, 위상 시프트 마스크 및 그 제조 방법과 표시 장치의 제조 방법 | |
| JPS6345092B2 (enrdf_load_stackoverflow) | ||
| US4873163A (en) | Photomask material | |
| JP5412107B2 (ja) | フォトマスクブランクの製造方法、及びフォトマスクの製造方法 | |
| CN113391515B (zh) | 光掩模坯料、光掩模坯料的制造方法、光掩模的制造方法及显示装置的制造方法 | |
| JP2021089422A (ja) | マスクブランク、転写用マスク、及び半導体デバイスの製造方法 | |
| JPS6251461B2 (enrdf_load_stackoverflow) | ||
| EP0054736B1 (en) | Photomask and photomask blank | |
| JP3041802B2 (ja) | フォトマスクブランク及びフォトマスク | |
| JPS60103350A (ja) | フオトマスクブランク | |
| JPS63214755A (ja) | フオトマスク | |
| KR101182082B1 (ko) | 다계조 포토마스크의 제조 방법, 및 다계조 포토마스크 | |
| JPS6095437A (ja) | フオトマスクブランク | |
| JP2001147516A (ja) | ハーフトーン型位相シフトマスクブランク及びハーフトーン型位相シフトマスク | |
| JPH0463349A (ja) | フォトマスクブランクおよびフォトマスク | |
| JPS6227386B2 (enrdf_load_stackoverflow) | ||
| CN107085351B (zh) | 蚀刻液及经蚀刻液加工的光掩模 | |
| JPS5990853A (ja) | フオトマスクブランク | |
| JPS6251460B2 (enrdf_load_stackoverflow) | ||
| JPS59119353A (ja) | フオトマスクブランク | |
| JPH0616170B2 (ja) | フオトマスクブランクとフオトマスク | |
| JPS61198156A (ja) | 改良されたフオトマスクブランク | |
| TW201947316A (zh) | 相移空白罩幕 | |
| JPS63214754A (ja) | フオトマスク |