JPS60101987A - 半導体レ−ザ装置 - Google Patents

半導体レ−ザ装置

Info

Publication number
JPS60101987A
JPS60101987A JP58208234A JP20823483A JPS60101987A JP S60101987 A JPS60101987 A JP S60101987A JP 58208234 A JP58208234 A JP 58208234A JP 20823483 A JP20823483 A JP 20823483A JP S60101987 A JPS60101987 A JP S60101987A
Authority
JP
Japan
Prior art keywords
semiconductor laser
type
light
laser device
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58208234A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0430760B2 (enExample
Inventor
Yuichi Shimizu
裕一 清水
Masaru Wada
優 和田
Takeshi Hamada
健 浜田
Fumiko Tajiri
田尻　文子
Masahiro Kume
雅博 粂
Kunio Ito
国雄 伊藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP58208234A priority Critical patent/JPS60101987A/ja
Publication of JPS60101987A publication Critical patent/JPS60101987A/ja
Publication of JPH0430760B2 publication Critical patent/JPH0430760B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2232—Buried stripe structure with inner confining structure between the active layer and the lower electrode
    • H01S5/2234—Buried stripe structure with inner confining structure between the active layer and the lower electrode having a structured substrate surface
    • H01S5/2235—Buried stripe structure with inner confining structure between the active layer and the lower electrode having a structured substrate surface with a protrusion

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
JP58208234A 1983-11-08 1983-11-08 半導体レ−ザ装置 Granted JPS60101987A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58208234A JPS60101987A (ja) 1983-11-08 1983-11-08 半導体レ−ザ装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58208234A JPS60101987A (ja) 1983-11-08 1983-11-08 半導体レ−ザ装置

Publications (2)

Publication Number Publication Date
JPS60101987A true JPS60101987A (ja) 1985-06-06
JPH0430760B2 JPH0430760B2 (enExample) 1992-05-22

Family

ID=16552869

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58208234A Granted JPS60101987A (ja) 1983-11-08 1983-11-08 半導体レ−ザ装置

Country Status (1)

Country Link
JP (1) JPS60101987A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6254990A (ja) * 1985-09-04 1987-03-10 Hitachi Ltd 半導体レ−ザ素子

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6254990A (ja) * 1985-09-04 1987-03-10 Hitachi Ltd 半導体レ−ザ素子

Also Published As

Publication number Publication date
JPH0430760B2 (enExample) 1992-05-22

Similar Documents

Publication Publication Date Title
US4111521A (en) Semiconductor light reflector/light transmitter
JPS59144193A (ja) 半導体レ−ザ
US4583226A (en) Coupled cavity injection laser
EP0155151B1 (en) A semiconductor laser
JPS60150682A (ja) 半導体レ−ザ素子
JPS60124887A (ja) 分布帰還形半導体レ−ザ
JPS60101987A (ja) 半導体レ−ザ装置
JP3584508B2 (ja) 短波長光源
US4764937A (en) Semiconductor laser array device
US4764936A (en) Semiconductor laser array device
JPH06188509A (ja) 半導体発光素子およびその製造方法
JPH0223038B2 (enExample)
JP2723888B2 (ja) 半導体レーザ素子
JPH0430759B2 (enExample)
JPH0268975A (ja) 半導体レーザ
JPH0440874B2 (enExample)
JPS60170992A (ja) 光集積回路
JPH01140787A (ja) 半導体レーザ素子
JPS6017984A (ja) 半導体レ−ザ装置
JPS6392076A (ja) 半導体レ−ザ
JPH02257691A (ja) 集積型半導体レーザ
JPS6010795A (ja) 半導体レ−ザ素子
JPS6017983A (ja) 半導体レ−ザ装置
JPH01184980A (ja) 半導体レーザ
JPH0667236A (ja) 波長変換素子