JPS60101927A - Apparatus for producing thin film - Google Patents

Abstract

PURPOSE:To obtain a required thin film without contaminating an expensive entrance window by providing an inactive gas supplying means to an airtight container having a reaction gas supplying means and an air exhausting means, and blowing the inactive gas from the inactive gas supplying means along the face of an energy beam entrance window provided in the airtight container. CONSTITUTION:A substrate holder 6 housing an auxiliary heater therein is provided in an airtight container 1 having a reaction gas supplying means 7, an exhaust means 8 and a quartz-made entrance window 4 provided with an O-ring 4 on the upper open surface. A substrate 5 on which a thin film is to be grown is disposed on the holder 6. The substrate 5 is then heated to 200-300 deg.C while an incident light 3 from a light source such as a mercury lamp or laser is supplied through the entrance window 4 and a mixed gas of SiH4, NH3, N2O etc. is injected from the supplying tube 7 so as to produce a thin film on the surface of the substrate 5. In this construction, the ends of a tube 9 for supplying in active gas such as N2 which is shunted by means of a valve 10 are positioned near the periphery of the window for blowing N2 gas to the rear face of the window so that it can be kept clean.

Description

[Detailed description of the invention] [Technical field of I-IIJ] This IJI41'' is optically OVD (chemical
This invention relates to improvements in thin film manufacturing equipment (vapor deposition).

[Prior art]

FIG. 1 is a cross-sectional view of a conventional CvD thin film manufacturing apparatus, in which il+ is an airtight container, (2) is an energy beam entrance window made of, for example, quartz, Q IJ song to maintain airtightness (a substrate used when forming a thin YA with a long surface of 61 mm, made of silicon, quartz glass, etc.,
) is a substrate holder equipped with a heater for additionally heating the substrate (5) by 7JIJ; N.H.
A reaction gas supply pipe for supplying a reaction gas such as 3, N20, etc. to four VCs in the chamber constitutes a part of the reaction gas supply means (shown in the figure).

(8) is an exhaust pipe that evacuates the inside of the airtight container TTL,
It constitutes a part of the exhaust means (not shown).

A conventional optical OVD thin film manufacturing apparatus is configured as described above.
For example, place a substrate (51 such as silicon or quartz glass) on the substrate holder (6) in the airtight container 11i, and after evacuating the inside of the airtight container ill with a vacuum pumper through the exhaust pipe (8), place the substrate holder An example of (6) is 200 to 3
The substrate i51 is heated by heating at 00°C (preferably 300"C or less) K, and a reactive gas such as SiH<, NH3, N20, etc. is introduced into the airtight container (I) by the reactive gas supply f (7). Then, exhaust - gi!
After maintaining a pressure Vrc of ~ several'rorr, for example, the energy m13) of a mercury lamp, a xenon lamp, or a laser beam such as an argon laser, a C02 laser, a YAG laser, and an excimer laser is used as a light source. The energy beam incident window (21L) is introduced, and the energy of the energy beam completely decomposes the reaction gas, and a thin film of, for example, Si, 5iOs+, SiN, etc. is deposited on the substrate (51L).
deposit on top.

In this case, the energy ray entrance window (2) efficiently transmits the incident light without refraction, and when the inside of the airtight container 11i is evacuated, the pressure difference between the inside and outside of the airtight container il+VCL
Wall thickness (A) ~ 30m to prevent damage and distortion.
m thick and needs to be polished to an optically flat surface with good flatness.In addition, if the energy beam source is an ultraviolet light source such as a mercury Lang or excimer laser beam, the material must be made thick to increase transmittance. It is necessary to use synthetic quartz of the highest grade. Further, even if the energy beam is visible light such as argon laser light, quartz is preferable in consideration of thermal distortion. As described above, the energy beam entrance window (2) is made of very expensive material. However, when this optical OVD method is carried out, when the reaction scum is introduced and the substrate (for example, Si, SiO2, SiN, etc. Some of them agree, and there is a drawback that the transmittance of energy rays is poor.However, as mentioned above, this energy ray entrance window (2) is polished to an optically flat surface. In addition, in some cases, anti-reflective coating is applied to increase the transmittance, and in order to remove this stain, it is not recommended to repeatedly perform re-polishing and etching. The drawback was that it required the use of commercially available materials.

[Summary of the invention]

This invention has been made to eliminate the drawbacks of the above-mentioned conventional products.
In addition, an energy beam entrance window provided in the container to allow the energy beam to enter the container, an exhaust means to exhaust the inside of the container, a reaction scum supply means to supply a reaction gas to the container i8, and the reaction Vcl so that the inner surface of the energy beam entrance window is covered with a gas that is inert to debris!
It is an object of the present invention to provide a thin film manufacturing apparatus which uses an apparatus equipped with an inert gas supply means for ejecting A, and which can manufacture thin film metal without contaminating an expensive energy beam entrance window.

[Acts of the Invention/1lli Example] No. 214) 1 This is a side view of a thin film manufacturing apparatus that does not include the embodiment of ``This Origin'', and in the figure, ill~(8) indicates the
91 is an inert gas supply means for supplying an inert gas such as nitrogen gas, which is inert to the above reaction gas, and refers to the pulp 1101.

In the thin film manufacturing equipment purchased as described above, the first
Similar to the conventional example shown in the figure, a substrate +51 made of, for example, silicon or quartz glass is placed on the substrate holder (6) in the air-tight container +tl, and then passed through the exhaust pipe 18) to the airtight container full.
Evacuate the inside. At this time, Pulp 1101! d Keep it closed. On the other hand, the substrate (51 is similar to the conventional example, for example,
Heat to 200-300'C. After reaching the required degree of vacuum inside the airtight container (L), while continuing to exhaust the air to the exhaust pipe (8), add the reaction gas supply pipe (from 71K, e.g. SiH4,
A reactive gas such as NH3゜N20 is introduced, and at the same time pulp (
101 is opened, and the inert gas of the nitrogen gas is passed through the energy beam entrance window (
2) Then start singing. Next, airtight volume 4. The gas pressure in viii, for example, ilo.

After adjusting m'rorr - Torr K, the energy beam (3) is made incident through the energy beam entrance window f21 k, and a thin film, for example, Si r Si N + 0102, is deposited on the substrate +51. So 1- thing V
Therefore, the inert gas such as nitrogen scum blown onto the energy beam entrance window (2) does not contribute to the OVD reaction, and the substrate (51
After the required thin film is deposited for 1 cH, the inner surface of the energy beam entrance window (2) is sprayed with an inert gas such as nitrogen gas to prevent contamination due to adhesion of reactants. +q f can be obtained.

In addition, the same method as above can also be used by using a so-called air curtain that exhausts the energy ray entrance window +21 K by the inert scum supply means (9) and exhausts the retirement active gas by means of an exhaust means (located at a position corresponding to the inert scum supply means). Effects can be obtained.

〔Effect of the invention〕

As stated above, the present invention relates to an airtight container having a reaction section, an energy beam entrance window provided in the container to ensure airtightness and for allowing energy rays to enter the container, and an energy beam entrance window in the container. JJI' air means to exhaust the above container 1
/4 i7 This is the reaction waste supplier who supplies the reaction gas! and contaminating the expensive energy beam entrance window by using a device equipped with an inert gas supply means that discharges a gas that is non-occupying with respect to the reaction gas so as to cover the inner surface of the entrance window. It is possible to obtain a thin film manufacturing apparatus that can manufacture all thin films without

[Brief explanation of the drawing]

Figure 1 is a side view of a conventional thin film manufacturing apparatus, and Figure 2 is a sectional view of a thin film manufacturing apparatus according to an embodiment of this invention. Energy ray entrance window: 3) Energy ray, (4) O-ring for maintaining airtightness, (5) Substrate used when forming surface K flj film, +61 A substrate holder equipped with a heater for supplementary heating (7)
1 is a reaction scum supply means, +S+f'i exhaust means, (9
) Inert gas supply means (10) is pulp. f-O, Tanikuni Junior High School-Duke-Dou-Matake 1 () The current portion shall be watered down. Agent: Ogo Tsumuo

Claims (1)

[Claims] (1: An airtight container for the reaction part+i, an airtight container provided on the top to maintain airtightness, an input window for energy rays to enter the container, and an exhaust means for exhausting the inside of the container. and a reaction scum supply means for supplying a reaction gas into the container, and an inert gas supply means for blowing out an inert gas against the reaction scum so as to cover the inner surface of the upper entrance window. A thin film manufacturing device equipped with 7 features and 1".