JPS60101541A - Electrophotographic sensitive body - Google Patents

Abstract

PURPOSE:To obtain a stable electrophotographic sensitive body having sensitivity to long wavelength light and long life by forming a photoconductive layer composed of an amorphous Se (a-Se) layer, a crystallization prevention layer made of a-Se contg. As, and a crystalline Se layer formed on this crystallization prevention layer. CONSTITUTION:A barrier layer 2, when needed, is formed on a conductive substrate 1, on this layer an electrostatic charge transfer laye 3 made of a-Se is formed, on this layer 3 a crystallization prevention layer 4 made of a-Se contg. As, a charge generating layer 5 made of crystalline Se, and a transparent insulating layer 5 are successively laminated. The crystallization prevention layer 4 is, e.g., made of a-Se contg. 0.2-50% As or such a-Se and 0-20ppm halogen. Since the interposition of the crystallization prevention layer 4 hinders change due to crystallization of the lower layer, the obtained photosensitive body has stability and long life. Since the uppermost crystalline Se layer sensitivity to long wavelength light, it can be used for a lamp having long wavelength components, or laser beams used as an exposure light source.

Description

[Detailed description of the invention] [Technical power of I6 Ming! 11j] This invention Q relates to an electrophotographic photoreceptor sensitive to long wavelengths.

[Prior art]

Conventionally, amorphous selenium and amorphous selenium-tellurium alloys A, (, +() have been used as photoconductors for use in electrophotography 11 & light bodies.

However, as shown by curve a in Figure 1, 1-phase selenium is sensitive only to short wavelengths, and
The amorphous selenium-tellurium alloy has the disadvantage of being difficult to use for light exposure, as shown in curve BA IJ in Figure 1, and is sensitive to long wavelengths. It has the drawback of being unstable and lacking durability as it undergoes changes over time such as the progression of oxidation.

As a photoconductor sensitive to long wavelengths, there is crystalline selenium (its characteristics are the same as the curve in Figure 1), but crystalline selenium was used as a uniform photoconductive layer. In case iJ1, the resistance is too low and the charge cannot be held, so it is useless.
When this is mixed with amorphous selenium, crystalline selenium/
serves as a nucleus, and the entire layer crystallizes and shatters. Therefore, in reality, it is difficult to form a photoconductive layer containing a mixture of amorphous selenium and crystalline selenium by vacuum evaporation or the like.

Therefore, although crystalline selenium is sensitive to long wavelengths, it is not used much as a result.

[Purpose of the invention]

An object of the present invention is to provide an electrophotographic photoreceptor that is sensitive to long wavelengths and has a stable and long life.

[Summary of the invention]

The present invention constructs a photoconductive layer by engraving a crystalline selenium layer on an amorphous selenium layer through an anti-crystallization layer made of amorphous selenium containing arsenic gold, and provides sensitivity in a long wavelength band. This prevents the progress of crystallization of the amorphous selenium layer, resulting in stable characteristics and longer life.

[Embodiments of the invention]

Examples of the present invention will be described below.

FIG. 2 is a schematic cross-sectional view of one embodiment of the present invention. In the figure, 1 is a conductive layer consisting of Az, All, Ag5Ni, O
u, stainless steel, other metals, and In2031Sn
02 or a mixture thereof.

Reference numeral 2 denotes a barrier layer formed on the conductive layer 1, which is made of paraxylylene, Az, OJ, etc., but this is not essential and can be formed as necessary, such as when you want to strengthen charge retention. It is something that will be done. Reference numeral 3 denotes an amorphous selenium layer formed to a thickness of 15 to 50 μm, which functions as a charge transport layer.

4 is a crystallization prevention layer formed on the amorphous selenium layer 3, which has a thickness of 0.5 to 2 μm and is made of amorphous selenium containing 0.2 to 50% arsenic.
ing. The reason why the arsenic content is set at 02 to 50% is as follows. In other words, if it is 0.2% or more -1,
The crystallization prevention effect of the amorphous selenium layer is weak, and 50
% or more is not preferable because the response becomes poor.

51J, 'A crystalline selenium layer formed on the crystallization prevention layer 4, having a thickness of 01 to 3zt, and functioning as a charge generation layer. 6 is a transparent insulating layer with a thickness of 5 to 50 μm provided on the crystalline selenium layer 5, and a film of fluorine, acrylic, urethane, polyester, alkyd, epoxy resin, or polyethylene terephthalate is bonded with an adhesive. It is formed by vapor-phase vaporization of baraquinrylene or the like.

Next, an example of manufacturing an electrophotographic photoreceptor having such a configuration will be shown. First, prepare an aluminum Uno substrate as a conductive substrate,
On the substrate, 10 L was added while maintaining the substrate temperature at C50C.
A 50μ thick amorphous selenium layer is formed by vacuum evaporation using boat heating under vacuum conditions of 50 μm.

Next, 0.4% arsenic was added on this amorphous selenium layer.
Forming an amorphous selenium layer containing 1 μm in thickness,
Subsequently, crystalline selenium, which had been heat-treated at 100 C for about 2 hours to form hexagonal crystals, was vacuum-deposited to a thickness of 1 μm outside a vacuum Pelger to form a photoconductive layer. The surface of this photoconductive layer was exposed and heat-treated for several minutes using a 400W halogen lamp installed in the Pelger, and then removed from the vacuum Pelger and a 30 μ thick transparent IJJ polyester film was attached as an insulating layer. The electrophotographic photoreceptor according to the present invention is described below. .

While applying a direct current corona of +7J (V) to the electrophotographic photoreceptor produced in this manner, the electrophotographic photoreceptor produced in this manner simultaneously emits a fluorescent light containing an emission spectrum in the red region.
-(:', light 1 fang j'(: L, then 16Kv
When the reverse polarity DC charging was performed and finally the entire surface was exposed, the dark area rli level was -500V, and the light Fit (r, 4
A high-contrast electrostatic latent image of 550 square meters was obtained at a position of +5°.

When this electrophotographic photoreceptor was used repeatedly, there was no change over time, and it had a lifespan of about 100,000 sheets.

As described above, in the crystallization prevention layer 4 made of amorphous selenium containing arsenic of the present invention, the crystalline selenium layer 5 serves as a nucleus, and the crystallization of the lower amorphous selenium layer t is '1'.
In addition, since this arsenic-selenium layer 1t has heat resistance, it plays an important role as a heat-resistant material when forming the crystalline selenium layer 5. It is something that fulfills the following.

For the reasons stated above, the arsenic content in this crystallization prevention layer 4 is suitably 0.2 to 50%, but if the content is too high, the mobility will decrease slightly (7 ) f, c D
Gen (Qz, ■, 13r, t') from 0 to 2゜pp
It is also possible to compensate for this by doping with Hl.

In the above production example, the crystalline selenium layer was formed by heat-treating hexagonal crystalline selenium by vapor deposition, and then further heat-treating it with a rogen lamp. However, other methods of forming the crystalline selenium layer are possible. dl, (1), A method in which the selenium vapor deposition material itself is heat-treated in advance at 60 to 100 C to form a hexagonal crystal system, and the material is used as a single crystal selenium layer, (2)
, a method of depositing amorphous selenium and then changing it to crystalline selenium by means such as heat treatment with a halogen lamp, contact with a heated roller, scanning with an electron beam, scanning with a laser beam, or (3), (1). There is a method (the above production example is based on this method) of forming a crystalline selenium layer by combining the method (2).

Among these, a specific example of (2) using electron beam scanning is as follows. That is, a light-emitting body with an amorphous selenium layer formed on its surface via a crystallization prevention layer by vapor deposition is placed in a chamber with a degree of vacuum of 10 torr, and this) lI'□5 conductor and electrons of 10 μφ Beano, (Heam voltage number white ~ Number 1 (vl Beam current 0.0
A crystalline selenium layer can be obtained by scanning and crystallizing the seven amorphous layers on the surface with an electron beam by relatively moving the amorphous selenium layer by 71'6.

The process of forming an image on the electrophotographic photoreceptor configured as described above includes the steps of direct current corona charging, simultaneous light image exposure), L1 reverse polarity direct i'l:i', 17 electrons, and full-surface exposure. 7k shows a method of
The same effect can be obtained by applying an electrophotographic method consisting of the following steps: charging, simultaneous exposure to 13 light beams, reverse polarity direct current charging, and full-surface i'-row light exposure.

〔Effect of the invention〕

In the present invention, a photoconductive layer of an electrophotographic photoreceptor is formed by sequentially laminating an amorphous selenium layer (an anti-crystallization layer made of amorphous selenium containing 1,1 L element) and a crystalline selenium layer, Since the uppermost layer is a crystalline selenium layer, it is sensitive to long wavelengths, and a lamp or laser having a long wavelength component can be used as the light beam for exposure.

In fact, the surface layer of the photoconductive layer is formed of a crystalline selenium layer and is crystallized, and it also acts as a crystallization prevention layer: it also prevents the underlying amorphous selenium layer from crystallizing. , stable length), an electrophotographic photoreceptor with long life can be obtained.

[Brief explanation of the drawing]

Figure 1 shows the sensitivity of amorphous selenium and amorphous selenium-tellurium alloy to light wavelengths! Diagram showing characteristics, 2nd
The figure is a schematic cross-sectional view of an embodiment of 10 electronic (lJ: shinkan) bodies according to the present invention. In the figure, ■ is a conductive layer, 2 is a barrier layer, :31:J-
A charge transport layer, 4 an anti-crystallization layer, 5 a crystallization prevention layer, 5 an insulating layer, and 6 an insulating layer.Patent applicant: Olympus Optical Co., Ltd.

Claims (3)

[Claims] (1) On the conductive layer, via a barrier layer if necessary, /C
1. A photographic photoreceptor comprising a charge generating layer made of selenium and a transparent insulating layer laminated in sequence. (2) The electrophotographic photoreceptor according to claim 1, wherein the crystallization prevention layer is composed of amorphous selenium containing 02 to 50% arsenic. (3) The crystallization prevention layer contains 0.2 to 50% arsenic;
2. The electrophotographic photoreceptor according to claim 1, wherein the electrophotographic photoreceptor is made of amorphous selenium containing a halogen of 0 to 201) p Ill.