JPS5994884A - 光電変換装置の作製方法 - Google Patents

光電変換装置の作製方法

Info

Publication number
JPS5994884A
JPS5994884A JP57206805A JP20680582A JPS5994884A JP S5994884 A JPS5994884 A JP S5994884A JP 57206805 A JP57206805 A JP 57206805A JP 20680582 A JP20680582 A JP 20680582A JP S5994884 A JPS5994884 A JP S5994884A
Authority
JP
Japan
Prior art keywords
electrode
semiconductor
trimming
photoelectric conversion
light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57206805A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6257252B2 (enExample
Inventor
Shunpei Yamazaki
舜平 山崎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP57206805A priority Critical patent/JPS5994884A/ja
Publication of JPS5994884A publication Critical patent/JPS5994884A/ja
Publication of JPS6257252B2 publication Critical patent/JPS6257252B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/10—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Photovoltaic Devices (AREA)
  • Light Receiving Elements (AREA)
JP57206805A 1982-11-24 1982-11-24 光電変換装置の作製方法 Granted JPS5994884A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57206805A JPS5994884A (ja) 1982-11-24 1982-11-24 光電変換装置の作製方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57206805A JPS5994884A (ja) 1982-11-24 1982-11-24 光電変換装置の作製方法

Publications (2)

Publication Number Publication Date
JPS5994884A true JPS5994884A (ja) 1984-05-31
JPS6257252B2 JPS6257252B2 (enExample) 1987-11-30

Family

ID=16529379

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57206805A Granted JPS5994884A (ja) 1982-11-24 1982-11-24 光電変換装置の作製方法

Country Status (1)

Country Link
JP (1) JPS5994884A (enExample)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4728615A (en) * 1984-10-17 1988-03-01 Fuji Electric Company Ltd. Method for producing thin-film photoelectric transducer
US4734379A (en) * 1985-09-18 1988-03-29 Fuji Electric Corporate Research And Development Ltd. Method of manufacture of solar battery
JPS63244627A (ja) * 1987-03-30 1988-10-12 Mitsubishi Electric Corp 半導体装置の製造方法
JP2000353814A (ja) * 1999-06-10 2000-12-19 Fuji Electric Co Ltd 薄膜太陽電池の製造方法及び同薄膜の成膜状態監視装置

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4728615A (en) * 1984-10-17 1988-03-01 Fuji Electric Company Ltd. Method for producing thin-film photoelectric transducer
US4734379A (en) * 1985-09-18 1988-03-29 Fuji Electric Corporate Research And Development Ltd. Method of manufacture of solar battery
JPS63244627A (ja) * 1987-03-30 1988-10-12 Mitsubishi Electric Corp 半導体装置の製造方法
JP2000353814A (ja) * 1999-06-10 2000-12-19 Fuji Electric Co Ltd 薄膜太陽電池の製造方法及び同薄膜の成膜状態監視装置

Also Published As

Publication number Publication date
JPS6257252B2 (enExample) 1987-11-30

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