JPS5991729U - Liquid phase epitaxial growth equipment - Google Patents
Liquid phase epitaxial growth equipmentInfo
- Publication number
- JPS5991729U JPS5991729U JP18826082U JP18826082U JPS5991729U JP S5991729 U JPS5991729 U JP S5991729U JP 18826082 U JP18826082 U JP 18826082U JP 18826082 U JP18826082 U JP 18826082U JP S5991729 U JPS5991729 U JP S5991729U
- Authority
- JP
- Japan
- Prior art keywords
- crystal
- liquid phase
- slider
- solution
- raw material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
第１図は従来の液相エピタキシャル装置の断面図、第２
図は本考案による液相エピタキシャル装置の一実施例の
断面図、第３図はスライダーの正面図及び側面図である
。Figure 1 is a cross-sectional view of a conventional liquid phase epitaxial device;
The figure is a sectional view of an embodiment of the liquid phase epitaxial device according to the present invention, and FIG. 3 is a front view and a side view of a slider.
Claims (1)
設けた溶液ホルダー；この溶液ホルダーに挿通され、前
記成長槽の内部の結晶原料溶液に接触しながら滑動する
、結晶基板の数置されたスライダー；前記スライダー上
の結晶基板を保護するために前記結晶基板を覆うように
設けられ、かつ前記結晶基板が前記成長槽内の結晶原料
溶液と接触する際には外される結晶蓋を保持する保持ブ
ロック；とを有すや液相エピタキシャル成長装置におい
て、前記結晶蓋を保持する保持ブロックは、工具上の固
定用突起を有し、前記スライダーに設けられた溝に嵌合
されて固定されており、更に前記溶液ホルダーの側に斜
面を有し、前記スライダーを溶液ホルダ一方向に滑動さ
せて前記結晶基板を結晶原料溶液に接触させる際には、
前記斜面は前記溶液ホルダーに当接し、前記保持ブロッ
クは、前記結晶蓋と共に、この斜面に沿って上昇し外れ
るようになっていることを特徴とする液相エピタキシャ
ル成長装置。A solution holder equipped with a growth tank for holding a crystal raw material solution and performing crystal growth; a number of crystal substrates are inserted into this solution holder and slide while contacting the crystal raw material solution inside the growth tank. a slider; holding a crystal lid that is provided to cover the crystal substrate in order to protect the crystal substrate on the slider and is removed when the crystal substrate comes into contact with the crystal raw material solution in the growth tank; In the liquid phase epitaxial growth apparatus, the holding block holding the crystal lid has a fixing protrusion on the tool, and is fixed by being fitted into a groove provided in the slider. and further has a slope on the side of the solution holder, and when the slider is slid in one direction of the solution holder to bring the crystal substrate into contact with the crystal raw material solution,
The liquid phase epitaxial growth apparatus is characterized in that the slope is in contact with the solution holder, and the holding block is moved up along the slope and removed together with the crystal lid.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18826082U JPS5991729U (en) | 1982-12-13 | 1982-12-13 | Liquid phase epitaxial growth equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18826082U JPS5991729U (en) | 1982-12-13 | 1982-12-13 | Liquid phase epitaxial growth equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5991729U true JPS5991729U (en) | 1984-06-21 |
| JPH0129783Y2 JPH0129783Y2 (en) | 1989-09-11 |
Family
ID=30406177
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP18826082U Granted JPS5991729U (en) | 1982-12-13 | 1982-12-13 | Liquid phase epitaxial growth equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5991729U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60117616A (en) * | 1983-11-30 | 1985-06-25 | Fujitsu Ltd | Liquid phase epitaxial growth method |
-
1982
- 1982-12-13 JP JP18826082U patent/JPS5991729U/en active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60117616A (en) * | 1983-11-30 | 1985-06-25 | Fujitsu Ltd | Liquid phase epitaxial growth method |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0129783Y2 (en) | 1989-09-11 |
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