JPS5988862A - 接続用金属への金属突起物形成方法 - Google Patents
接続用金属への金属突起物形成方法Info
- Publication number
- JPS5988862A JPS5988862A JP57199205A JP19920582A JPS5988862A JP S5988862 A JPS5988862 A JP S5988862A JP 57199205 A JP57199205 A JP 57199205A JP 19920582 A JP19920582 A JP 19920582A JP S5988862 A JPS5988862 A JP S5988862A
- Authority
- JP
- Japan
- Prior art keywords
- metallic
- metal
- substrate
- projections
- leads
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000015572 biosynthetic process Effects 0.000 title description 3
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 title 1
- 239000000758 substrate Substances 0.000 claims abstract description 32
- 229910052751 metal Inorganic materials 0.000 claims description 68
- 239000002184 metal Substances 0.000 claims description 68
- 238000000034 method Methods 0.000 claims description 23
- 239000004065 semiconductor Substances 0.000 claims description 15
- 238000010438 heat treatment Methods 0.000 claims description 2
- 229920001721 polyimide Polymers 0.000 abstract description 8
- 239000009719 polyimide resin Substances 0.000 abstract description 7
- 239000011521 glass Substances 0.000 abstract description 4
- 238000007747 plating Methods 0.000 abstract description 4
- 238000004519 manufacturing process Methods 0.000 abstract description 2
- 238000009413 insulation Methods 0.000 abstract 1
- 239000010408 film Substances 0.000 description 17
- 239000010931 gold Substances 0.000 description 7
- 229910052782 aluminium Inorganic materials 0.000 description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 6
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 4
- 238000004806 packaging method and process Methods 0.000 description 4
- 238000009713 electroplating Methods 0.000 description 3
- 229920006015 heat resistant resin Polymers 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 241000287462 Phalacrocorax carbo Species 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- 239000002689 soil Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
- H01J9/02—Manufacture of electrodes or electrode systems
- H01J9/04—Manufacture of electrodes or electrode systems of thermionic cathodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/50—Tape automated bonding [TAB] connectors, i.e. film carriers; Manufacturing methods related thereto
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Wire Bonding (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP57199205A JPS5988862A (ja) | 1982-11-12 | 1982-11-12 | 接続用金属への金属突起物形成方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP57199205A JPS5988862A (ja) | 1982-11-12 | 1982-11-12 | 接続用金属への金属突起物形成方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5988862A true JPS5988862A (ja) | 1984-05-22 |
JPH0129061B2 JPH0129061B2 (enrdf_load_stackoverflow) | 1989-06-07 |
Family
ID=16403881
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP57199205A Granted JPS5988862A (ja) | 1982-11-12 | 1982-11-12 | 接続用金属への金属突起物形成方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5988862A (enrdf_load_stackoverflow) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20230268312A1 (en) * | 2022-02-18 | 2023-08-24 | Bae Systems Information And Electronic Systems Integration Inc. | Soft touch eutectic solder pressure pad |
-
1982
- 1982-11-12 JP JP57199205A patent/JPS5988862A/ja active Granted
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20230268312A1 (en) * | 2022-02-18 | 2023-08-24 | Bae Systems Information And Electronic Systems Integration Inc. | Soft touch eutectic solder pressure pad |
Also Published As
Publication number | Publication date |
---|---|
JPH0129061B2 (enrdf_load_stackoverflow) | 1989-06-07 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US4784972A (en) | Method of joining beam leads with projections to device electrodes | |
TW535462B (en) | Electric circuit device and method for making the same | |
TW398063B (en) | Lead frame and its manufacturing method thereof | |
KR900008665B1 (ko) | 반도체장치의 제조방법 | |
US4494688A (en) | Method of connecting metal leads with electrodes of semiconductor device and metal lead therefore | |
JP3186941B2 (ja) | 半導体チップおよびマルチチップ半導体モジュール | |
US3501681A (en) | Face bonding of semiconductor devices | |
US3495324A (en) | Ohmic contact for planar devices | |
JPH07506217A (ja) | 製造された半導体ダイ上に電極の接続を形成する方法 | |
JPH07201864A (ja) | 突起電極形成方法 | |
JPH06132474A (ja) | 半導体装置 | |
TW518917B (en) | A tape carrier for semiconductor and the manufacturing method for the semiconductor and this tape carrier | |
JPS6150339A (ja) | 半導体装置の製造方法 | |
JPS5988862A (ja) | 接続用金属への金属突起物形成方法 | |
Smith et al. | Hybrid Microcircuit Tape Chip Carrier Materials/Processing Trade-Offs | |
JP3021508B2 (ja) | 導電突起の形成方法 | |
JP2002176267A (ja) | 電子部品、回路装置とその製造方法並びに半導体装置 | |
JPS59201452A (ja) | 高密度テ−プボンデイング用デバイス封止 | |
JPS5940539A (ja) | 半導体装置およびその製造方法 | |
JPS6091656A (ja) | 半導体装置の製造方法 | |
JPS6290939A (ja) | 半導体装置 | |
JPS62208642A (ja) | 半導体装置の実装方法 | |
JPS6234143B2 (enrdf_load_stackoverflow) | ||
JPH0466384B2 (enrdf_load_stackoverflow) | ||
JPH10303254A (ja) | 半導体素子搭載用テープキャリア、およびそのテープキャリアを使用した半導体装置 |