JPS598609A - 微結晶を含有するシリコン薄膜及びその製造方法 - Google Patents
微結晶を含有するシリコン薄膜及びその製造方法Info
- Publication number
- JPS598609A JPS598609A JP11478682A JP11478682A JPS598609A JP S598609 A JPS598609 A JP S598609A JP 11478682 A JP11478682 A JP 11478682A JP 11478682 A JP11478682 A JP 11478682A JP S598609 A JPS598609 A JP S598609A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- grid
- silicon thin
- amorphous
- silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Silicon Compounds (AREA)
- Chemical Vapour Deposition (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11478682A JPS598609A (ja) | 1982-07-03 | 1982-07-03 | 微結晶を含有するシリコン薄膜及びその製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11478682A JPS598609A (ja) | 1982-07-03 | 1982-07-03 | 微結晶を含有するシリコン薄膜及びその製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS598609A true JPS598609A (ja) | 1984-01-17 |
| JPS6367553B2 JPS6367553B2 (enExample) | 1988-12-26 |
Family
ID=14646643
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11478682A Granted JPS598609A (ja) | 1982-07-03 | 1982-07-03 | 微結晶を含有するシリコン薄膜及びその製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS598609A (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61119195U (enExample) * | 1985-01-14 | 1986-07-28 |
-
1982
- 1982-07-03 JP JP11478682A patent/JPS598609A/ja active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61119195U (enExample) * | 1985-01-14 | 1986-07-28 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6367553B2 (enExample) | 1988-12-26 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4835005A (en) | Process for forming deposition film | |
| US4863529A (en) | Thin film single crystal diamond substrate | |
| JPS5767020A (en) | Thin silicon film and its manufacture | |
| JPH01296611A (ja) | 半導体薄膜堆積法 | |
| US4918028A (en) | Process for photo-assisted epitaxial growth using remote plasma with in-situ etching | |
| GB2043042A (en) | Production of semiconductor bodies made of amorphous silicon | |
| JPH0650730B2 (ja) | 半導体薄膜の製造方法 | |
| JPS598609A (ja) | 微結晶を含有するシリコン薄膜及びその製造方法 | |
| US5135607A (en) | Process for forming deposited film | |
| KR20200075992A (ko) | 탄화규소 에피웨이퍼 제조방법 | |
| JPS6367554B2 (enExample) | ||
| US5439844A (en) | Process for forming deposited film | |
| JPS6367555B2 (enExample) | ||
| EP0243074B1 (en) | Process for forming deposited film | |
| EP0241311A2 (en) | Process for forming deposited film | |
| JPS59207828A (ja) | シリコン薄膜の形成方法 | |
| JPH02262324A (ja) | X線透過膜およびその製造方法 | |
| JPS6191010A (ja) | 堆積膜形成法 | |
| JPH07315826A (ja) | 多結晶シリコン薄膜及びその製造方法 | |
| JPS589321A (ja) | シリコン薄膜の製造法 | |
| JPS61193429A (ja) | 堆積膜形成法 | |
| JPS58163951A (ja) | 光導電部材 | |
| JPS61248420A (ja) | 堆積膜形成法 | |
| JPS61179868A (ja) | 堆積膜形成法 | |
| JPS639014B2 (enExample) |