JPS598351Y2 - Semiconductor wafer processing jig - Google Patents

Description

[Detailed description of the invention] This invention is based on a semiconductor wafer processing jig, in which a plurality of semiconductor wafer processing fixtures are connected and installed inside the processing equipment, and the semiconductor wafers supported on this processing jig are The present invention relates to the structure of a processing jig for semiconductor wafers, in which the spacing between the processing equipment and the connecting portions of the processing equipment is made equal.

2. Description of the Related Art In manufacturing semiconductor devices, a processing apparatus shown in a partially cutaway perspective view in FIG. 1 is used to perform deposition, oxidation, diffusion, etc. on semiconductor wafers.

In the figure, reference numeral 1 indicates a cylindrical furnace core tube made of quartz, through which a reactive gas, an example of an oxidizing ambient gas, is flowed through a nozzle section 11 at one end, and maintained at a high temperature (e.g., 800 to 1250 degrees Celsius). The above gas is applied to the semiconductor wafers 2 (one of the plurality of wafers is shown by a broken line) placed in the furnace core tube, and is discharged from the open port of the furnace core tube.

The semiconductor wafer processing jig 3 for placing the semiconductor wafer in a predetermined portion within the furnace core tube is made of quartz rod and has an elongated oval shape and is smaller in diameter than the semiconductor wafer, as shown in a perspective view in FIG. The grooves 13, 13', . . . for supporting the semiconductor wafer are formed on the upper surface of the parallel portions.

Further, the non-parallel portions (both end portions) of the processing jig are shaped into flat portions or concave portions 23 in order to narrow the distance between the semiconductor wafers supported by the ends of the adjacent processing jig.

Next, FIG. 3 shows a cross-sectional view of the connecting portion of the wafer processing jigs 3 and 3' in the wafer processing apparatus.

As shown in the figure, the distance between the semiconductor wafers is determined by the groove into which the wafers are inserted and supported, and although the distance between the semiconductor wafers in the processing jig is reduced by the flat portion or recess 23 at the connecting portion, The distance D' is larger than the distance D.

The above will be explained in detail.

In consideration of automatic processing of semiconductor wafers and workability, wafer processing jigs are often short compared to the soaking length of the furnace core tube.When performing heat treatment using these jigs, ,
The wafer processing jigs are placed on a quartz boat holder (FIG. 1, FIG. 4) that is large enough to hold a plurality of the jigs at the same time, and the wafer processing jigs are arranged in series according to the soaking length of the furnace core tube.

When heat treatment is performed side by side in this way, the distance between the semiconductor wafers becomes large at the connection part of the processing jig as described above, which causes the flow of processing gas to become uneven, causing unevenness in the diffused impurity layer and making it difficult to maintain uniformity. diffusion has become impossible.

Another disadvantage is that the number of semiconductor wafers that can be subjected to diffusion treatment at one time is small.

The present invention provides a semiconductor wafer processing jig that overcomes the above-mentioned conventional drawbacks.

The semiconductor wafer processing jig of the present invention is characterized in that when used in series, the distance between the wafers supported by the jig is equal, including the connection portions of the jig.

Next, the present invention will be described in detail with reference to the drawings regarding an embodiment of a semiconductor wafer processing jig.

A processing apparatus shown in a partially cutaway perspective view in FIG. 4 is used to subject semiconductor wafers to processing such as positioning, oxidation, and diffusion.

In the figure, reference numeral 1 indicates a cylindrical furnace core tube made of quartz, through which a reactive gas, an example of an oxidizing ambient gas, is flowed through a nozzle section 11 at one end, and maintained at a high temperature (e.g., 800 to 1250 degrees Celsius). The above gas is applied to the semiconductor wafers 2 (one of the plurality of wafers is shown by a broken line) placed in the furnace core tube, and is discharged from the open port of the furnace core tube.

As shown in a perspective view in FIG. 5, the processing jig 33 for installing the semiconductor wafer in a predetermined portion within the furnace core tube fixes two quartz rods 33a and 33a' in parallel. Multiple pieces 33.33', 33'', parallel to the axis of
...Continuously charge.

A groove 43 is provided on the upper surface for supporting the semiconductor wafer facing the main surface. 43'... is an expression of this.

Next, the positional relationship of the semiconductor wafer at the connection portion of the processing jig for this wafer is shown in FIG.

As shown in the figure, the interval P between the grooves that support the semiconductor wafer is the same as the interval P between the jig connection parts.

Using a jig according to this invention, a semiconductor wafer coated with an impurity diffusion source containing boron or phosphorus is mounted inside a furnace core tube maintained at a temperature suitable for diffusion. Then, the zero atmosphere is shaped by oxidizing gas introduced from the furnace core tube nozzle to form a deposit on the surface of the wafer.

FIG. 8 shows the surface layer resistance distribution of the wafer in the furnace together with the arrangement of processing jigs.

As shown in the figure, extremely high uniformity was obtained, and an example using a conventional processing jig is shown in FIG.

Compared to the conventional method, the uniformity of the ambient gas flow within the furnace core tube was reflected in the resistance value of the surface layer, and a very remarkable effect was recognized.

This invention is not limited to the examples, but can be widely applied to gas phase reactions on semiconductor wafers.

[Brief explanation of the drawing]

Fig. 1 is a partially cutaway perspective view of a furnace core tube into which a conventional wafer processing jig is inserted, Fig. 2 is a perspective view of a conventional wafer processing jig, and Fig. 3 is a perspective view of a conventional wafer processing jig. FIG. 4 is a cross-sectional view of a portion of the wafer processing jig for explaining the wafer processing jig. FIG. FIG. 5 is a perspective view of a wafer processing jig according to an embodiment of this invention, FIG. 6 is a partial sectional view for explaining the wafer processing jig according to an embodiment of this invention, and FIG.
The figure shows the effects of a conventional wafer processing jig, and FIG. 8 shows the effects of a wafer processing jig according to an embodiment of the invention. Note that the same reference numerals in the drawings indicate the same or corresponding parts, respectively. 2... Semiconductor wafer, 3u, 3U'...
・Wafer processing jig, 43.43'...Groove of wafer processing jig.

Claims (1)

[Scope of utility model registration request] A semiconductor device in which a plurality of semiconductor wafer processing jigs are connected in series and arranged and supported in grooves on the upper surface with the semiconductor wafers aligned and supported with their main surfaces facing each other, and the gaps between the supported semiconductor wafers are set continuously. A processing jig for semiconductor wafers that is tightly sealed, including the connections between the wafer processing jigs.