JPS5981851A - 電子ビ−ムアニ−ル装置 - Google Patents
電子ビ−ムアニ−ル装置Info
- Publication number
- JPS5981851A JPS5981851A JP57191815A JP19181582A JPS5981851A JP S5981851 A JPS5981851 A JP S5981851A JP 57191815 A JP57191815 A JP 57191815A JP 19181582 A JP19181582 A JP 19181582A JP S5981851 A JPS5981851 A JP S5981851A
- Authority
- JP
- Japan
- Prior art keywords
- electron
- sample
- electron beam
- shape
- electron emitter
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000010894 electron beam technology Methods 0.000 title claims abstract description 39
- 238000000137 annealing Methods 0.000 title claims description 24
- 238000007493 shaping process Methods 0.000 claims abstract 5
- 230000003287 optical effect Effects 0.000 claims description 5
- 230000005855 radiation Effects 0.000 claims description 5
- 230000001678 irradiating effect Effects 0.000 claims 2
- 239000010408 film Substances 0.000 abstract description 39
- 239000013078 crystal Substances 0.000 abstract description 27
- 239000004065 semiconductor Substances 0.000 abstract description 13
- 239000010409 thin film Substances 0.000 abstract description 3
- 230000008018 melting Effects 0.000 abstract description 2
- 238000002844 melting Methods 0.000 abstract description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 11
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 11
- 229910052721 tungsten Inorganic materials 0.000 description 10
- 239000010937 tungsten Substances 0.000 description 10
- 238000010586 diagram Methods 0.000 description 8
- 239000012212 insulator Substances 0.000 description 5
- 239000007788 liquid Substances 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 239000007790 solid phase Substances 0.000 description 4
- 239000007791 liquid phase Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000012071 phase Substances 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000001953 recrystallisation Methods 0.000 description 2
- 235000009470 Theobroma cacao Nutrition 0.000 description 1
- 244000240602 cacao Species 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 239000006228 supernatant Substances 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
Landscapes
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Electron Sources, Ion Sources (AREA)
- Recrystallisation Techniques (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57191815A JPS5981851A (ja) | 1982-11-02 | 1982-11-02 | 電子ビ−ムアニ−ル装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57191815A JPS5981851A (ja) | 1982-11-02 | 1982-11-02 | 電子ビ−ムアニ−ル装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5981851A true JPS5981851A (ja) | 1984-05-11 |
| JPH0131660B2 JPH0131660B2 (enrdf_load_stackoverflow) | 1989-06-27 |
Family
ID=16280980
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57191815A Granted JPS5981851A (ja) | 1982-11-02 | 1982-11-02 | 電子ビ−ムアニ−ル装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5981851A (enrdf_load_stackoverflow) |
-
1982
- 1982-11-02 JP JP57191815A patent/JPS5981851A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0131660B2 (enrdf_load_stackoverflow) | 1989-06-27 |
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