JPS5976491A - Single mode laser module - Google Patents

Single mode laser module

Info

Publication number
JPS5976491A
JPS5976491A JP57187216A JP18721682A JPS5976491A JP S5976491 A JPS5976491 A JP S5976491A JP 57187216 A JP57187216 A JP 57187216A JP 18721682 A JP18721682 A JP 18721682A JP S5976491 A JPS5976491 A JP S5976491A
Authority
JP
Japan
Prior art keywords
laser diode
laser module
diode
face
mode laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP57187216A
Other languages
Japanese (ja)
Inventor
Shigefumi Masuda
増田　重史
Akira Okamoto
明 岡本
Takeo Iwama
岩間　武夫
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP57187216A priority Critical patent/JPS5976491A/en
Publication of JPS5976491A publication Critical patent/JPS5976491A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/14—External cavity lasers
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G02B6/4201—Packages, e.g. shape, construction, internal or external details
    • G02B6/4204—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms
    • G02B6/4207—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms with optical elements reducing the sensitivity to optical feedback
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/023—Mount members, e.g. sub-mount members
    • H01S5/02325—Mechanically integrated components on mount members or optical micro-benches
    • H01S5/02326—Arrangements for relative positioning of laser diodes and optical components, e.g. grooves in the mount to fix optical fibres or lenses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0225—Out-coupling of light
    • H01S5/02251—Out-coupling of light using optical fibres

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To obtain a single mode laser module which radiates only a light reflected from a reflection member and unnecessitates fine adjustment of a diode by a method wherein two convex reflection members are arranged on a stem with convex surfaces opposed each other, and the laser diode is provided therebetween. CONSTITUTION:V-grooves V1 and V2 are formed, at a fixed interval, on the surface of a substrate BP composed of silicon, diamond, etc. Next, spherical lenses LE1 and LE2 covered with reflection films R11 and R22 respectively are arranged, while they are buried to lower halves of the spheres, at the opposing edges of these V-grooves V1 and V2, and optical fibers F1 and F2 are made to abut against the outer edges thereof, while they are likewise buried to the halves of diameters in the grooves V1 and V2. Thereafter, the laser diode LD is mounted by being positioned between the spherical lenses LE1 and LE2. The depth (d) of the grooves V1 and V2 is set at the depth whereby the light from the diode LD passes through centers O1 and O2 of the lenses LE1 and LE2 and the optical axis of the fibers F1 and F2.

Description

【発明の詳細な説明】 発明の技術分野 本発明は、簡単な構成により、十分にスベクレ トラム幅の狭い光いわゆる単一モードのが−ザ光を得る
ことができる様にした単一モードレーザモシー−ルに関
するものである。DETAILED DESCRIPTION OF THE INVENTION Technical Field of the Invention The present invention is directed to a single mode laser beam which is capable of obtaining so-called single mode laser light with a sufficiently narrow spectrum width using a simple configuration. This is related to LE.

従来技術及び問題点 従来から第１図に示す様にレーザダイオードＬＤは、放
熱のため、金属のステムＳＴ上に固定されており、ステ
ムＳＴの端面８ＴＴとレーザダイオードＬＤの端面ＬＤ
Ｔが一致する様にしている。Prior Art and Problems Conventionally, as shown in FIG. 1, a laser diode LD has been fixed on a metal stem ST for heat dissipation, and an end surface 8TT of the stem ST and an end surface LD of the laser diode LD are connected to each other.
I'm trying to make sure that T matches.

そして、レーザダイオードＬＤの端面ＬＤＴに近廣して
光ファイバＦを設置、レーザダイオードＬＤからのレー
ザ光を伝送する様にしている。ところで、このレーザダ
イオードＬＤは、第２図（ａ）に示す様に傾むい−Ｃ配
置される場合がある。An optical fiber F is installed near the end face LDT of the laser diode LD to transmit the laser light from the laser diode LD. By the way, this laser diode LD may be arranged in an inclined position as shown in FIG. 2(a).

この場合、レーザ光が点−で示す如く直進しないで実線
の如く、若干傾むいて出射される。In this case, the laser beam does not go straight as shown by the dot, but is emitted at a slight angle as shown by the solid line.

又第２図（ｂ）に示す様にレーザダイオードＬＤが正確
にｎｊ！、ｌｔされても、活性領域の不純物の分布の不
均一性、格子欠陥等により、レーザダイオードの共振器
内で光が蛇行するので、端面から出射されるレーザ光が
傾むいてしまう場合がある。Also, as shown in FIG. 2(b), the laser diode LD is accurately nj! , even if the laser diode is used, the laser light emitted from the end facet may be tilted because the light meander within the laser diode cavity due to non-uniform distribution of impurities in the active region, lattice defects, etc. .

このため、光ファイバＦをこの傾きに脅せて取付位置の
微調整を行なう必要があった。For this reason, it was necessary to adjust the attachment position of the optical fiber F by adjusting it to this inclination.

従ってレーザダイオードがアレイ化されると、光ファイ
バのｅ、ｌｔ整に非常に時間がかかる欠点があった。Therefore, when laser diodes are arranged in an array, there is a drawback that it takes a very long time to adjust e and lt of the optical fiber.

発明の目的及び構成 本発明は、この様な欠点を除去し、各レーザダイオード
毎の微調整をなくすことができる様にした単一モードレ
ーザモジュールを提供することを目的とし、この様な目
的は、凸面状の２つの反射部材間にレーザダイオードを
設置したことを特徴とする単一モードレーザモジュール
によって達成される。Object and Structure of the Invention The object of the present invention is to provide a single mode laser module that eliminates such drawbacks and eliminates the need for fine adjustment for each laser diode. This is achieved by a single mode laser module characterized in that a laser diode is installed between two convex reflecting members.

発明の実施例 以下本発明を実施例に基づいて、詳細に説明する。第３
図、第４図は本発明の原理を示す図で、図に訃いて、Ｒ
Ｉｓ　Ｒ２は反射部材で第１図と同一部材には同一符号
を付与している。EXAMPLES OF THE INVENTION The present invention will now be described in detail based on examples. Third
Figure 4 is a diagram showing the principle of the present invention.
Is R2 is a reflective member, and the same members as in FIG. 1 are given the same reference numerals.

本発明においては、ステムＳＴ上に２つの凸面反射部材
”Ｉｙ　Ｒ２を凸面が対向する様に設置し、この反射部
材ＲＩＩ　Ｒ１間にレーザダイオードＬＤを配置する。In the present invention, two convex reflecting members "Iy R2" are installed on the stem ST so that their convex surfaces face each other, and a laser diode LD is arranged between the reflecting members RII R1.

この構成によると、レーザダイオードＬＤから出射する
、光は、反射部材Ｒ１ｔ　Ｒ２に入射するが、反射部材
ＲＩｓ　Ｒ２からレーザダイオードＬＩ）に戻る光は、
反射部材が曲面となっているので、反射部材ＲＩＦ　Ｒ
２に垂直に入射した光に限定される。According to this configuration, the light emitted from the laser diode LD is incident on the reflecting member R1t R2, but the light returning from the reflecting member RIs R2 to the laser diode LI is
Since the reflective member has a curved surface, the reflective member RIF R
It is limited to light incident perpendicularly to 2.

従って、レーザダイオードＬＤからの光は、反射部材Ｒ
１＋　”２から反射した光のみを出射する様になる。Therefore, the light from the laser diode LD is reflected by the reflecting member R.
1+ "Only the light reflected from 2 will be emitted.

又反射部材Ｒ，，Ｒ２は、いわゆる共振器（エタロン）
となっており、反射部材Ｒ１’２で反射した光が共像状
態になると、反射部材ＲＩ＋Ｒ２を透過する様になる。Also, the reflecting members R,, R2 are so-called resonators (etalons).
When the light reflected by the reflecting member R1'2 becomes a co-image state, it will be transmitted through the reflecting member RI+R2.

第４図では、レーザダイオードＬＤの端面ＬＤＴを反射
部材Ｒ１ｅＲＲ間に形成される光路に対しブリュースタ
ー角だけ傾むけて設置している。In FIG. 4, the end face LDT of the laser diode LD is inclined by the Brewster's angle with respect to the optical path formed between the reflecting members R1eRR.

これによりレーザダイオードＬＤの端面での反林 射がなくなり、反射部材Ｒ１＋　Ｒｔ間で共振するＭに
なる。従って共振条件を設定するのが容易となる。As a result, there is no reflection at the end face of the laser diode LD, and M resonates between the reflecting members R1+Rt. Therefore, it becomes easy to set resonance conditions.

尚、この場合、レーザダイオードＬＤ内で光が屈折され
るので光軸がＸだけ若干ずれる。In this case, since the light is refracted within the laser diode LD, the optical axis is slightly shifted by X.

第５図（ａ）（ｂ）は本発明の具体的実施例を示す図で
、図中Ｂ　Ｐハシリコン、ダイヤモンド等の基板、ＩＪ
、。FIGS. 5(a) and 5(b) are diagrams showing specific embodiments of the present invention, in which B P is a substrate made of silicon, diamond, etc., IJ
,.

Ｌ　ｍｔ　ｉｊ　球Ｖ　ンス、Ｒｕ　＋　Ｒｎ　ハ反Ｈ
ＭＸｚ　Ｖｌｌ　”２ｉｊ：Ｖ溝である。L mt ij ball V nce, Ru + Rn ha anti-H
MXz Vll "2ij: V groove.

図の例においては、反射膜ＲＩＩ　ｒ　Ｒ２２を球レン
ズＬＫ、、Ｌｇ２の表面に形成し、この球レンズＩＪ、
。In the illustrated example, the reflective film RII r R22 is formed on the surfaces of the ball lenses LK, , Lg2, and the ball lenses IJ,
.

ＬＨｉ２を基板ＢＰに形成したＶ溝ｖｌｐ　ｖｔ内に配
置する。LHi2 is placed in the V-groove vlp vt formed in the substrate BP.

そしてレーザダイオードＬＤをこのレンズＬＨｉ、。And the laser diode LD is connected to this lens LHi.

ＬＦｌｉ、間に配置する。又各レンズＬＥ、、　ＬＢＩ
！２に対向して、Ｖ＃ｖＩ、ｖ２内に光ファイバ’ｌｐ
　’２を配置する。LFli, placed between. Also, each lens LE,, LBI
! 2, V#vI, optical fiber 'lp in v2
'Place 2.

ファイバ’１＋　’２の光軸を通る様な深さとする。The depth should be such that it passes through the optical axis of fiber '1+'2.

この構成において、前述した原理と同様レーザダイオー
ドＬＤからの光は球レンズＩＩ、、　　Ｌｌ！！２に形
成した反射膜Ｒ，，，Ｈ□の間において反射を繰返し、
特定のモードの光のみが共振する。In this configuration, similar to the principle described above, the light from the laser diode LD is transmitted through the ball lenses II, Ll! ! Repeated reflection between the reflective films R, , H□ formed in 2,
Only light in a specific mode resonates.

そして、共振した光は反射膜ＲＩＩ　ｒ　Ｒ２２を透過
ＯＩＯλ し、球レンズＬｌ！ｉ、、　ｌ、の中心島、塙を通り光
ファイバＰＩＦ　’２に入射する。The resonant light then passes through the reflective film RII r R22 and passes through the spherical lens Ll! It passes through the central island of i,, l, and enters the optical fiber PIF '2.

ここで球レンズＬＥｌｉ、、　Ｌｌ！ｉ、と光ファイバ
’Ｉ＋　’２とは共にＶ溝ｖＩ＋　ｖｔに配置されてい
るので、精密に位置合せされている。Here, the ball lens LEli,, Ll! i, and the optical fiber 'I+'2 are both placed in the V-groove vI+vt, so they are precisely aligned.

第６図は、第４図に対応する具体例で、レーザダイオー
ドＬＤを球レンズＬｌ！ｉ、、　ＩＩＫＩ間に形成され
る光路に対し、ブリュ・−スター角をなす様傾むけて配
置した例である。FIG. 6 is a specific example corresponding to FIG. 4, in which the laser diode LD is connected to the ball lens Ll! This is an example in which the light beam is arranged so as to form a Brewster angle with respect to the optical path formed between the light beams i, , and IIKI.

この場合光路がずれるので、Ｖ溝ｖｌ＋ｖ２もずらして
形成する。In this case, since the optical path is shifted, the V grooves vl+v2 are also formed shifted.

第７図（ａ）、（ｂ）、（Ｃ）に本発明の他の実施例を
示す図である。第７図はレーザダイオードとしてＶＳＢ
（Ｖ−ＧＲＯＯ１ｉ’ｆｆ１Ｄ　５ＵＢＳＴＲＡＴＥＩ
　ＢＵＲ工ＥｉＤ　１ＴＥＲＯ８ＴＲσＣ−ＴＵＲＪＩ
　Ｉ、ＡＳＢｌｉＲ）レーザを用いた場合を示す。FIG. 7(a), (b), and (C) are diagrams showing other embodiments of the present invention. Figure 7 shows VSB as a laser diode.
(V-GROO1i'ff1D 5UBSTRATEI
BUR Engineering EiD 1TERO8TRσC-TURJI
I, ASBliR) laser is used.

このＶＢＢｖ−ザはｌａ）図に示す如く、ＩｎＧａＡｓ
Ｐより成る活性層ＡＯをＶ溝の中に埋め込んだ構造とな
っている。This VBBv-the is la) As shown in the figure, InGaAs
It has a structure in which an active layer AO made of P is buried in a V-groove.

この構造を利用し、（ｂ）図の如く、半導体基板ｓｇに
■溝Ｖ、を形成し、点線で囲まれた領域ＶＬＤにのみ、
活性層ＡＣを埋込む様にする。Using this structure, as shown in (b), a groove V is formed in the semiconductor substrate sg, and only in the region VLD surrounded by the dotted line,
The active layer AC is buried.

そしてＶ溝ｖ３内に球レンズＩＩ、、ＬＥ２と光ファイ
バＦｌｐ　Ｆ２を配置する。Then, ball lenses II, LE2 and optical fiber Flp F2 are placed in the V-groove v3.

この構成においては、領域ＶＬＤの部分で発生した光は
端面Ｔ、、　Ｔ２及び反射膜Ｒ１１＋　　Ｒ２２で反射
し、共振する。In this configuration, the light generated in the region VLD is reflected by the end faces T, T2 and the reflective films R11+R22 and resonates.

コｏｔｊ％合モ、、　（ｃ）図ノ如く、Ｖｇ、７）端面
ＴＩ　Ｉ　＋　Ｔ２２をブリュースター角となる様に傾
斜させることもできる。この場合Ｖ溝ＶＢ＋　ｒ　Ｖｇ
２は若干ずらして形成する。(c) As shown in the figure, Vg, 7) The end face TI I + T22 can also be inclined so as to form the Brewster angle. In this case, V groove VB+ r Vg
2 is formed slightly shifted.

発明の効果 以上の如く、不発明によれば、凸形の反射面を用いて、
共振器を構成しているためは、レーザダイオードの傾き
、特性に無関係に、反射面の特定の位置から光が出射す
る。As described above, according to the non-invention, using a convex reflective surface,
Since it constitutes a resonator, light is emitted from a specific position on the reflecting surface, regardless of the inclination and characteristics of the laser diode.

従って、各レーザ毎に光ファイバの位置を微調整する必
要がなくなる。Therefore, there is no need to finely adjust the position of the optical fiber for each laser.

【図面の簡単な説明】[Brief explanation of drawings]

第１図は従来のレーザモジー−ルを示す図、第２図は従
来のレーザモジュールの欠点を示す図、第３図、第４図
は本発明の原理を示す図、第５図、第６図、第７図は本
発明の具体例を示す図である。 図中Ｒ１ｐ　Ｒ２は反射部材、ＬＤはレーザダイオード
、ＬＥ、、　Ｌｌ！！２は球レンズ、ＲＩＩ＋　Ｒ２２
は反射膜、ｖＩ＋　Ｖ２＋　ＶＬ　ｖ３１　＋　　ＶＳ
ｔはＶ溝、Ｆｌ　＋　’２は光７７茅　Ｉ　図 茅ｊ　図 ０ 茅４図 １１１／ 茅５閾 ＜ａ＞ ｊＰ 第乙図Fig. 1 shows a conventional laser module, Fig. 2 shows the drawbacks of the conventional laser module, Figs. 3 and 4 show the principle of the present invention, and Figs. 5 and 6. , FIG. 7 is a diagram showing a specific example of the present invention. In the figure, R1p and R2 are reflective members, LD is a laser diode, LE, Ll! ! 2 is a ball lens, RII+ R22
is a reflective film, vI+ V2+ VL v31 + VS
t is V groove, Fl + '2 is light 77 kaya I Figure kaya j Figure 0 Chi 4 Figure 111/Kaya 5 threshold <a> jP 2nd diagram

Claims (7)

【特許請求の範囲】[Claims] （１）凸面状の２つの反射部材間にレーザダイオードを
設置したことを特徴とする単一モードレーザモジュール
。(1) A single mode laser module characterized in that a laser diode is installed between two convex reflecting members. （２）該反射部材間に形式される光軸に対し、該レーザ
ダイオードの端面がプリー−スター角をなす様傾むけて
設置したことを特徴とする特許請求の範囲第１項記載の
単一モードレーザモジニール。(2) The unit according to claim 1, wherein the end face of the laser diode is inclined with respect to the optical axis formed between the reflecting members so as to form a Priester angle. mode laser modinir. （３）表面の一部に反射膜を形成した２つのレンズを該
反射膜が対向する様に配置に該反射膜間にレーザダイオ
ードを設置したことを特徴とする単一モードレーザモジ
ュール。(3) A single mode laser module characterized in that two lenses each having a reflective film formed on a portion of their surfaces are arranged so that the reflective films face each other, and a laser diode is installed between the reflective films. （４）支持基板にｖ＃Ｉ＃を形成し、該Ｖ溝中に表面の
一部に反射膜を形成した２つのレンズを該反射膜が対向
する様に配置し、該反射膜間にレーザダイオードを設置
したことを特徴とする単一レーザモジュール(4) Form v#I# on the support substrate, arrange two lenses in which a reflective film is formed on a part of the surface in the V groove so that the reflective films face each other, and place a laser beam between the reflective films. Single laser module characterized by the installation of a diode （５）該反射膜間に形式される光軸に対し、該レーザダ
イオードの端面がブリュースター角をなす様に傾むけて
設置したことを特徴とする特許請求の範囲第３項又は第
４項記載の単一モードレーザモジュール(5) Claim 3 or 4, characterized in that the end face of the laser diode is installed so as to be inclined to form a Brewster's angle with respect to the optical axis formed between the reflective films. Single mode laser module listed （６）半導体基板にＶ溝を形成し、該Ｖｍの中央部にお
いて、光を誘導放出する活性層を埋込み、該活性層を埋
め込んだ領域の端面に対向して、反射膜を形成したレン
ズを配置したことを特徴とすル単一モードレーザモジュ
ール。(6) A V-groove is formed in a semiconductor substrate, an active layer that stimulates light emission is embedded in the center of the Vm, and a lens with a reflective film formed is placed opposite the end face of the region where the active layer is embedded. A single-mode laser module featuring a single-mode laser module. （７）該活性層を埋込んだ領域の端面はブリュースター
角となる様に形成したことを特徴とする特許請求の範囲
第６項記載の単一モードレーザモジュール、 項に記載の単一モードレーザダイオード。(7) The single mode laser module according to claim 6, characterized in that the end face of the region in which the active layer is buried is formed to have a Brewster angle; laser diode.
JP57187216A 1982-10-25 1982-10-25 Single mode laser module Pending JPS5976491A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57187216A JPS5976491A (en) 1982-10-25 1982-10-25 Single mode laser module

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57187216A JPS5976491A (en) 1982-10-25 1982-10-25 Single mode laser module

Publications (1)

Publication Number Publication Date
JPS5976491A true JPS5976491A (en) 1984-05-01

Family

ID=16202100

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57187216A Pending JPS5976491A (en) 1982-10-25 1982-10-25 Single mode laser module

Country Status (1)

Country Link
JP (1) JPS5976491A (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57107092A (en) * 1980-12-25 1982-07-03 Fujitsu Ltd Semiconductor laser device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57107092A (en) * 1980-12-25 1982-07-03 Fujitsu Ltd Semiconductor laser device

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