JPS57107092A - Semiconductor laser device - Google Patents

Semiconductor laser device

Info

Publication number
JPS57107092A
JPS57107092A JP18471180A JP18471180A JPS57107092A JP S57107092 A JPS57107092 A JP S57107092A JP 18471180 A JP18471180 A JP 18471180A JP 18471180 A JP18471180 A JP 18471180A JP S57107092 A JPS57107092 A JP S57107092A
Authority
JP
Japan
Prior art keywords
pulses
end surface
semiconductor laser
self
pulsation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP18471180A
Other languages
Japanese (ja)
Inventor
Hideo Kuwabara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP18471180A priority Critical patent/JPS57107092A/en
Publication of JPS57107092A publication Critical patent/JPS57107092A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/14—External cavity lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/065—Mode locking; Mode suppression; Mode selection ; Self pulsating

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To obtain ultrashort light pulses using wide gain bandwidth effectively by a DC power source only by a method wherein a self-pulsation characteristic possessed by a semiconductor is utilized and the end surface of a semiconductor laser is made no reflection to oscillate pulses in external cavity mode. CONSTITUTION:A semiconductor laser 3 accidentally generates self pulsation SP or constantly generates the self pulsation SP by deforming structure. The frequency f1 is directly proportional to (I/Ith-1)alpha. Where, I is driving current, Ith is threshold current, and alpha is approximately 1/2. And an external oscillator with a length of L is provided and modulation is done from outside by a resonance frequency fc=C/ZnL (where, c is the velocity of light, n is refractive index) and the phase between axis modes is mutually locked to generate narrow pulses. fr= fc is achieved by adjusting the current I and the end surface 4 is covered with Al2O3 to form no reflection status and pulses are oscillated in external cavity mode to pass the end surface 4 and to reflect by a mirror 5. Then, pulses with a period of t=2Ln/c are obtained. In this composition, short light pulses are obtained by effectively using the wide gain bandwidth of a laser by a DC power source only.
JP18471180A 1980-12-25 1980-12-25 Semiconductor laser device Pending JPS57107092A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP18471180A JPS57107092A (en) 1980-12-25 1980-12-25 Semiconductor laser device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP18471180A JPS57107092A (en) 1980-12-25 1980-12-25 Semiconductor laser device

Publications (1)

Publication Number Publication Date
JPS57107092A true JPS57107092A (en) 1982-07-03

Family

ID=16158023

Family Applications (1)

Application Number Title Priority Date Filing Date
JP18471180A Pending JPS57107092A (en) 1980-12-25 1980-12-25 Semiconductor laser device

Country Status (1)

Country Link
JP (1) JPS57107092A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5976491A (en) * 1982-10-25 1984-05-01 Fujitsu Ltd Single mode laser module

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5976491A (en) * 1982-10-25 1984-05-01 Fujitsu Ltd Single mode laser module

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