JPS61189517A - Manufacture of semiconductor laser device with optical isolator - Google Patents

Manufacture of semiconductor laser device with optical isolator

Info

Publication number
JPS61189517A
JPS61189517A JP3096585A JP3096585A JPS61189517A JP S61189517 A JPS61189517 A JP S61189517A JP 3096585 A JP3096585 A JP 3096585A JP 3096585 A JP3096585 A JP 3096585A JP S61189517 A JPS61189517 A JP S61189517A
Authority
JP
Japan
Prior art keywords
semiconductor laser
optical fiber
fiber
lens
optical
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3096585A
Other languages
Japanese (ja)
Inventor
Satoshi Ishizuka
石塚 訓
Osamu Kamata
修 鎌田
Kaoru Takahashi
薫 高橋
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP3096585A priority Critical patent/JPS61189517A/en
Publication of JPS61189517A publication Critical patent/JPS61189517A/en
Pending legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24Coupling light guides
    • G02B6/42Coupling light guides with opto-electronic elements
    • G02B6/4201Packages, e.g. shape, construction, internal or external details
    • G02B6/4204Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms
    • G02B6/4207Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms with optical elements reducing the sensitivity to optical feedback
    • G02B6/4208Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms with optical elements reducing the sensitivity to optical feedback using non-reciprocal elements or birefringent plates, i.e. quasi-isolators

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)

Abstract

PURPOSE:To suppress the rays of light which are reflected back to a semiconductor laser by fixing two positions between an optical fiber core and a fiber holder and, the end part between an optical fiber element wire and the holder. CONSTITUTION:A lens 2 is arranged at the distance of >=1mm from the semiconductor laser and consists of three divided parts; semiconductor laser part, lens and isolator part, and optical fiber part. An adjustment perpendicular to the optical axis of the lens isolator part and adjustments parallel and perpendicular to the optical axis of the optical fiber are so made that projection light from the laser 1 is passed through the lens 2, magneto-optic crystal 5, and a polarizer 7 and is made incident on the optical fiber from the end part of the fiber element wire 8 at a maximum, and then a fixing part 10' is fixed. The fiber element wire 8 and fiber holder 9 are fixed by the fixing part 8, the position of the optical fiber is adjusted, and the laser part and isolator part, and the isolator part and holder 9 are fixed respectively. Consequently, the quantity of reflected light is suppressed at a specified value or below.

Description

【発明の詳細な説明】 産業上の利用分野 本発明は、光通信等の光信号伝送用の光源として用いら
れる光アイソレータ付半導体レーザ装置の製造方法に関
する。
DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a method of manufacturing a semiconductor laser device with an optical isolator used as a light source for optical signal transmission in optical communications and the like.

従来の技術 従来の光アイソレータ付半導体レーザ装置は、例えば特
開昭56−21107号公報に示されているように第3
図のような構成となっている。
2. Description of the Related Art A conventional semiconductor laser device with an optical isolator is disclosed in Japanese Unexamined Patent Publication No. 56-21107, for example.
The configuration is as shown in the figure.

すなわち、半導体レーザ14からの出射光16は結合レ
ンズ16.ガラス板18.入射側レンズ12、光アイソ
レータ本体20.出射側レンズ12′を透過し光ファイ
バ17に集光し伝送される。
That is, the emitted light 16 from the semiconductor laser 14 is transmitted through the coupling lens 16. Glass plate 18. Incident side lens 12, optical isolator main body 20. The light passes through the exit lens 12', is focused on the optical fiber 17, and is transmitted.

一方、光アイソレータ本体20以降の光の各接続部での
反射光は、光アイソレータ本体2oの磁気光学効果の作
用により阻止され半導体レーザ14に戻らないというも
のである。
On the other hand, the light reflected from the optical isolator main body 20 onwards at each connection portion is blocked by the magneto-optic effect of the optical isolator main body 2o and does not return to the semiconductor laser 14.

発明が解決しようとする問題点 しかし、このような構成では、半導体レーザ14の出射
光のうちの一部が例えば入射側レンズ12と光アイソレ
ータ本体2oとの間で反射し。
Problems to be Solved by the Invention However, in such a configuration, a part of the light emitted from the semiconductor laser 14 is reflected between, for example, the incident side lens 12 and the optical isolator main body 2o.

半導体レーザ14に戻ってしまい半導体レーザ14が不
安定な動作をしてしまうという問題があった。
There was a problem in that the semiconductor laser 14 returned to the original state and the semiconductor laser 14 operated unstablely.

問題点を解決するための手段 本発明は上記の問題点を解決するために、一方の端面が
曲面をなした集束性ロッドレンズを、半導体レーザとの
距離を1n以上離して配置し、半導体レーザ部、レンズ
及びアイソレータ部、光ファイバ部に3分割して各々作
製し、光ファイバを保持する機能を有するファイバホル
ダの形状を円筒形を基本とする形状とし、その中心軸上
光ファイバの中心軸および半導体レーザの発光部中心が
位置するようにし、また光ファイバとファイバホルダを
固定する工程において光ファイバ心線とファイバホルダ
との間および光ファイバ素線の端部とファイバホルダと
の間の2ケ所を各々固着することを第1の工程とするも
のである。
Means for Solving the Problems In order to solve the above-mentioned problems, the present invention arranges a focusing rod lens with one end surface having a curved surface at a distance of 1n or more from the semiconductor laser. The fiber holder, which has the function of holding the optical fiber, is basically cylindrical in shape, and the central axis of the optical fiber is on the central axis of the fiber holder. and the center of the light emitting part of the semiconductor laser is located, and in the process of fixing the optical fiber and the fiber holder, there are The first step is to fix each part.

作用 本発明は上記の方法により、半導体レーザからの出射光
のうちの、半導体レーザと光アイソレータ部体との間で
の半導体レーザへの反射戻り光を極力抑えることができ
、また、製造が容易で且つ信頼性の高い光アイソレータ
付半導体レーザモジエールが実現できるものである。
Effect of the Invention The present invention uses the method described above to minimize the amount of light reflected back to the semiconductor laser between the semiconductor laser and the optical isolator body out of the light emitted from the semiconductor laser, and is easy to manufacture. This makes it possible to realize a semiconductor laser module with an optical isolator that is highly reliable.

実施例 第1図は本発明方法により作製される光アイソレータ付
半導体レーザ装置の一実施例を示す断面図である。第1
図は、半導体レーザマウント1′に固定した半導体レー
ザ1.レンズ2を固定する機能を有し、且つ磁気光学結
晶6.磁石4.及び偏光子7とを結晶ホルダ6と共に一
体化する機能を有する円筒形状のレンズホルダ3.及び
ステンレス等から成る金属スリーブ11で補強したファ
イバ心線1oとファイバ素線8とを固着する機能を有し
、且つそれ自身がレンズアイソレータ部と固着する機能
を有する円筒形を基本とする形状のファイバホルダ9を
有している。
Embodiment FIG. 1 is a sectional view showing an embodiment of a semiconductor laser device with an optical isolator manufactured by the method of the present invention. 1st
The figure shows a semiconductor laser 1.0 fixed to a semiconductor laser mount 1'. It has the function of fixing the lens 2 and is a magneto-optic crystal 6. Magnet 4. and a cylindrical lens holder 3 which has the function of integrating the polarizer 7 and the crystal holder 6. It has a function of fixing the fiber core wire 1o reinforced with a metal sleeve 11 made of stainless steel or the like and the fiber wire 8, and also has a function of fixing itself to the lens isolator section. It has a fiber holder 9.

以下に具体的な製造方法の一実施例について述べる。An example of a specific manufacturing method will be described below.

半導体レーザ1を半導体レーザマウント1′に固定する
工程と、レンズ2をその曲面を有する端面と半導体レー
ザ1との間の距離が1mm以上となる位置で固定し、且
つ結晶ホルダ6と共に磁気光学結晶6と磁石4および偏
光子7とを一体化する工程と、光ファイバを金属スリー
ブ11と共にファイバホルダ9と一体化する工程とを各
々分割して別々に行ない、その後裔々を第1図のように
配置し、半導体レーザ1からの出射光が、レンズ2゜磁
気光学結晶5.偏光子7を通過し光ファイバ素線8の端
部よシ光ファイバへ最大入射するようにレンズアイソレ
ータ部の光軸に対して垂直方向の調整と光ファイバの光
軸方向及び光軸に対して垂直方向の調整を行ない、固着
部10’を樹脂、半田。
A step of fixing the semiconductor laser 1 to the semiconductor laser mount 1', fixing the lens 2 at a position where the distance between the curved end face and the semiconductor laser 1 is 1 mm or more, and fixing the lens 2 together with the crystal holder 6 to the magneto-optic crystal. 6 with the magnet 4 and polarizer 7, and the step of integrating the optical fiber with the metal sleeve 11 and the fiber holder 9, are divided and carried out separately, and the subsequent steps are performed separately as shown in FIG. The light emitted from the semiconductor laser 1 is transmitted through the lens 2°, the magneto-optic crystal 5. Adjustment in the direction perpendicular to the optical axis of the lens isolator part and in the direction of the optical axis of the optical fiber so that the maximum incidence on the optical fiber passes through the polarizer 7 and enters the optical fiber from the end of the optical fiber strand 8. After adjusting the vertical direction, fix the fixing part 10' with resin and solder.

溶接などの固着手段により固着する。Fixed by fixing means such as welding.

その後、ファイバホルダ9と一体固着化された光ファイ
バを一端調整治具より取りはずし、ファイバ素線8とフ
ァイバホルダ9とを固着部8′で。
After that, one end of the optical fiber integrally fixed to the fiber holder 9 is removed from the adjustment jig, and the fiber wire 8 and the fiber holder 9 are connected at the fixed part 8'.

前記固着手段により固着する。その後再度光ファイバを
調整治具に取り付は位置調整を行ない、半導体レーザ部
とレンズアイソレータ部、およびレンズアイソレータ部
とファイバホルダ9とを各々前記固着手段により固着す
るものである。
It is fixed by the fixing means. Thereafter, the optical fiber is mounted on the adjustment jig again and its position is adjusted, and the semiconductor laser section and the lens isolator section, and the lens isolator section and the fiber holder 9 are each fixed by the above-mentioned fixing means.

また半導体レーザ1とレンズ2の端面との距離について
は第2図に示すように、半導体レーザと反射面との距離
をd2反射面の反射率をRとすると、半導体レーザへの
反射戻シ光量ηは、次のように表わされる。
Regarding the distance between the semiconductor laser 1 and the end face of the lens 2, as shown in Figure 2, if the distance between the semiconductor laser and the reflective surface is d2 and the reflectance of the reflective surface is R, then the amount of light reflected back to the semiconductor laser is η is expressed as follows.

ここでrは反射面の曲率半径、λは半導体レーザの発振
波長、ω土とω/は半導体レーザ、の接合面に垂直方向
、および平行方向のビームスポットサイズである。伝送
実験の結果から半導体レーザが安定した動作をするため
には半導体レーザへの反射戻シ光量を−75(IB以下
に抑えることが必要となるが、反射率1%2曲率半径2
ffの曲面を有する集束性ロッドレンズを使用した場合
の前記式における計算結果は第2図に示すように反射戻
り光量を一75dB以下とするためには1′In1以上
の距離が必要となるものである。
Here, r is the radius of curvature of the reflecting surface, λ is the oscillation wavelength of the semiconductor laser, and ω and ω/ are the beam spot sizes in the direction perpendicular and parallel to the junction surface of the semiconductor laser. From the results of transmission experiments, in order for the semiconductor laser to operate stably, it is necessary to suppress the amount of light reflected back to the semiconductor laser to below -75 (IB), but the reflectance is 1%2 the radius of curvature is 2
When using a converging rod lens with a curved surface of ff, the calculation result using the above formula is as shown in Figure 2, where a distance of 1'In1 or more is required to reduce the amount of reflected return light to -75 dB or less. It is.

発明の効果 以上述べてきたように5本発明によれば、(1)半導体
レーザからの出射光を光ファイバへ集光するだめのレン
ズとして、一方の端面が曲面をなし、且つ断面内での屈
折率分布が中心軸からの距離の2乗に比例して減少する
集束性ロッドレンズを半導体レーザとの間の距離を1H
以上とすることにより、レンズ端面から反射し半導体レ
ーザへ戻る反射光量を−75(1B以下に抑えることが
でき、半導体レーザの安定した動作が可能となる。(2
)半導体レーザ部、レンズとアイソレータ部、および光
ファイバ部とに3分割して各々作製し、且つ光ファイバ
の位置を調整し固定する工程において、光ファイバの光
軸方向の位置調整とファイバホルダへの固着を第1の工
程とすることにより1作製が容易となる。(3)ファイ
バホルダの形状を円筒形を基本とする形状とし、その中
心軸上に光ファイバの中心軸および半導体レーザの発光
部中心が位置するようにし、且つ光ファイバ素線の先端
部が固着されているため、周囲温度変化に対する光ファ
イバの位置ずれを極力抑えることができ、信頼性の高い
光アイソレータ付半導体レーザ装置が実現できる。
Effects of the Invention As described above, according to the present invention, (1) one end surface is curved and the lens serves as a lens for condensing the emitted light from the semiconductor laser onto the optical fiber; The distance between the semiconductor laser and the focusing rod lens whose refractive index distribution decreases in proportion to the square of the distance from the central axis is 1H.
By doing so, the amount of reflected light reflected from the lens end face and returning to the semiconductor laser can be suppressed to -75 (1B) or less, and stable operation of the semiconductor laser is possible. (2
) In the step of fabricating the semiconductor laser section, lens and isolator section, and optical fiber section by dividing them into three parts, and adjusting and fixing the position of the optical fiber, the process involves adjusting the position of the optical fiber in the optical axis direction and attaching it to the fiber holder. By making fixation the first step, the manufacturing process becomes easier. (3) The shape of the fiber holder is basically cylindrical, the central axis of the optical fiber and the center of the light emitting part of the semiconductor laser are located on the central axis, and the tip of the optical fiber is fixed. Therefore, the positional shift of the optical fiber due to changes in ambient temperature can be suppressed as much as possible, and a highly reliable semiconductor laser device with an optical isolator can be realized.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明の光アイソレータ付半導体レーザ装置の
製造方法に基づき構成した装置の一実施例を示す断面図
、第2図は半導体レーザとレンズ端面との間の距離に対
する半導体レーザへの反射戻り光景の関係を示す図、第
3図は従来の光アイソレータ付半導体レーザ装置の要部
断面図である。 1・・・・・・半導体v−サ、 2・・・・・・レンズ
、3・・・・・・レンズホルダ、4・・・・・・磁石、
6・・・・・・磁気光学結晶、6・・・・・・結晶ホル
ダ、7・・・・・・偏光子、8・・・・・・ファイバ素
線、9・・・・・・ファイバホルダ、10・旧・・ファ
イバ心線。 代理人の氏名 弁理士 中 尾 敏 男 ほか1名第1
FIG. 1 is a cross-sectional view showing an embodiment of a device constructed based on the method of manufacturing a semiconductor laser device with an optical isolator of the present invention, and FIG. 2 is a diagram showing the reflection on the semiconductor laser with respect to the distance between the semiconductor laser and the end face of the lens. FIG. 3, which is a diagram showing the relationship between the returned views, is a sectional view of a main part of a conventional semiconductor laser device with an optical isolator. 1...Semiconductor v-sa, 2...Lens, 3...Lens holder, 4...Magnet,
6...Magneto-optical crystal, 6...Crystal holder, 7...Polarizer, 8...Fiber strand, 9...Fiber Holder, 10. Old... fiber core wire. Name of agent: Patent attorney Toshio Nakao and 1 other person No. 1
figure

Claims (1)

【特許請求の範囲】 半導体レーザと、前記半導体レーザからの光を光ファイ
バの端面に集光させるためのレンズ、磁気光学結晶、磁
石、偏光子及び光ファイバとから構成される光アイソレ
ータ付半導体レーザ装置を製造するに際し、 (a)半導体レーザ部、レンズ及びアイソレータ部、光
ファイバ部に3分割して各々製造し、 (b)前記レンズとして一方の端面が曲面をなし、かつ
断面内での屈折率分布が中心軸からの距離の2乗に比例
して減少する集束性ロッドレンズを1個使用し、 (c)前記半導体レーザの活性層端面と前記集束性ロッ
ドレンズの曲面をなした端面との間の距離を1mm以上
とし、 (d)前記光ファイバを保持する機能を有するファイバ
ホルダの形状を円筒形を基本とする形状としその中心軸
上に前記光ファイバの中心軸及び前記半導体レーザの発
光部中心が位置するようになし、 (e)光ファイバの位置を調整し固定する工程において
、前記光ファイバの光軸方向の位置調整及び前記ファイ
バホルダへの固着を第1の工程とし、 (f)前記光ファイバと前記ファイバホルダとを固定す
る方法として光ファイバ心線と前記ファイバホルダとの
間、及び光ファイバ素線の先端部と前記ファイバホルダ
との間の2ケ所を各々固着する ようにしたことを特徴とする光アイソレータ付半導体レ
ーザ装置の製造方法。
[Claims] A semiconductor laser with an optical isolator, which is composed of a semiconductor laser, a lens for condensing light from the semiconductor laser onto an end face of an optical fiber, a magneto-optic crystal, a magnet, a polarizer, and an optical fiber. When manufacturing the device, (a) it is divided into three parts: a semiconductor laser part, a lens and isolator part, and an optical fiber part, and (b) one end surface of the lens is curved and the refraction within the cross section is made. one focusing rod lens whose rate distribution decreases in proportion to the square of the distance from the central axis; (c) an end surface of the active layer of the semiconductor laser and a curved end surface of the focusing rod lens; (d) The shape of the fiber holder having the function of holding the optical fiber is basically cylindrical, and the central axis of the optical fiber and the semiconductor laser are located on the central axis of the fiber holder. (e) in the step of adjusting and fixing the position of the optical fiber, adjusting the position of the optical fiber in the optical axis direction and fixing it to the fiber holder as a first step; f) A method for fixing the optical fiber and the fiber holder is to fix them at two places: between the optical fiber core and the fiber holder, and between the tip of the optical fiber and the fiber holder. A method of manufacturing a semiconductor laser device with an optical isolator, characterized in that:
JP3096585A 1985-02-19 1985-02-19 Manufacture of semiconductor laser device with optical isolator Pending JPS61189517A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3096585A JPS61189517A (en) 1985-02-19 1985-02-19 Manufacture of semiconductor laser device with optical isolator

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3096585A JPS61189517A (en) 1985-02-19 1985-02-19 Manufacture of semiconductor laser device with optical isolator

Publications (1)

Publication Number Publication Date
JPS61189517A true JPS61189517A (en) 1986-08-23

Family

ID=12318382

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3096585A Pending JPS61189517A (en) 1985-02-19 1985-02-19 Manufacture of semiconductor laser device with optical isolator

Country Status (1)

Country Link
JP (1) JPS61189517A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6430510U (en) * 1987-08-19 1989-02-23

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6430510U (en) * 1987-08-19 1989-02-23

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