JPS5972161A - 半導体記憶装置 - Google Patents

半導体記憶装置

Info

Publication number
JPS5972161A
JPS5972161A JP58164947A JP16494783A JPS5972161A JP S5972161 A JPS5972161 A JP S5972161A JP 58164947 A JP58164947 A JP 58164947A JP 16494783 A JP16494783 A JP 16494783A JP S5972161 A JPS5972161 A JP S5972161A
Authority
JP
Japan
Prior art keywords
groove
region
layer
type
oxide film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58164947A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0310235B2 (enrdf_load_stackoverflow
Inventor
Takamitsu Kamiyama
神山 孝光
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP58164947A priority Critical patent/JPS5972161A/ja
Publication of JPS5972161A publication Critical patent/JPS5972161A/ja
Publication of JPH0310235B2 publication Critical patent/JPH0310235B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10BELECTRONIC MEMORY DEVICES
    • H10B12/00Dynamic random access memory [DRAM] devices
    • H10B12/30DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/37DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor being at least partially in a trench in the substrate

Landscapes

  • Element Separation (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
JP58164947A 1983-09-09 1983-09-09 半導体記憶装置 Granted JPS5972161A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58164947A JPS5972161A (ja) 1983-09-09 1983-09-09 半導体記憶装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58164947A JPS5972161A (ja) 1983-09-09 1983-09-09 半導体記憶装置

Publications (2)

Publication Number Publication Date
JPS5972161A true JPS5972161A (ja) 1984-04-24
JPH0310235B2 JPH0310235B2 (enrdf_load_stackoverflow) 1991-02-13

Family

ID=15802873

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58164947A Granted JPS5972161A (ja) 1983-09-09 1983-09-09 半導体記憶装置

Country Status (1)

Country Link
JP (1) JPS5972161A (enrdf_load_stackoverflow)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4606011A (en) * 1984-10-31 1986-08-12 Kabushiki Kaisha Toshiba Single transistor/capacitor semiconductor memory device and method for manufacture
JPS63172455A (ja) * 1987-01-09 1988-07-16 Mitsubishi Electric Corp 半導体記憶装置
US4920390A (en) * 1985-07-02 1990-04-24 Matsushita Electric Industrial Co., Ltd. Semiconductor memory device and method of fabricating the same
US4990980A (en) * 1985-04-16 1991-02-05 Kabushiki Kaisha Toshiba Semiconductor memory device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4606011A (en) * 1984-10-31 1986-08-12 Kabushiki Kaisha Toshiba Single transistor/capacitor semiconductor memory device and method for manufacture
US4990980A (en) * 1985-04-16 1991-02-05 Kabushiki Kaisha Toshiba Semiconductor memory device
US4920390A (en) * 1985-07-02 1990-04-24 Matsushita Electric Industrial Co., Ltd. Semiconductor memory device and method of fabricating the same
JPS63172455A (ja) * 1987-01-09 1988-07-16 Mitsubishi Electric Corp 半導体記憶装置

Also Published As

Publication number Publication date
JPH0310235B2 (enrdf_load_stackoverflow) 1991-02-13

Similar Documents

Publication Publication Date Title
KR900000207B1 (ko) 반도체 기억장치와 그 제조방법
US5696395A (en) Dynamic random access memory with fin-type stacked capacitor
JPS6156446A (ja) 半導体装置およびその製造方法
JPH08250677A (ja) 半導体記憶装置及びその製造方法
US6569729B1 (en) Method of fabricating three dimensional CMOSFET devices for an embedded DRAM application
JPH056977A (ja) ダイナミツク型半導体記憶装置およびその製造方法
JPH0648719B2 (ja) 半導体記憶装置
JPH0715949B2 (ja) Dramセル及びその製造方法
JPS6156445A (ja) 半導体装置
JPS63281457A (ja) 半導体メモリ
JPS6123360A (ja) 半導体記憶装置およびその製造方法
JPS5972161A (ja) 半導体記憶装置
JP2519216B2 (ja) 半導体記憶装置
US4897702A (en) Semiconductor memory device and manufacturing method for the same
JPS6315749B2 (enrdf_load_stackoverflow)
JPS6156444A (ja) 半導体装置
JPH1197529A (ja) 半導体装置の製造方法
JPS6325713B2 (enrdf_load_stackoverflow)
JP2943268B2 (ja) 半導体メモリ及びその製造方法
JPS6058662A (ja) 電荷一時蓄積記憶装置
JPH0793367B2 (ja) 半導体記憶装置およびその製造方法
JP2511852B2 (ja) 半導体装置の製造方法
JP2827377B2 (ja) 半導体集積回路
JPS60117658A (ja) Mosダイナミツクメモリ装置の製造方法
JPH08236716A (ja) 半導体集積回路装置の製造方法