JPS5972161A - 半導体記憶装置 - Google Patents
半導体記憶装置Info
- Publication number
- JPS5972161A JPS5972161A JP58164947A JP16494783A JPS5972161A JP S5972161 A JPS5972161 A JP S5972161A JP 58164947 A JP58164947 A JP 58164947A JP 16494783 A JP16494783 A JP 16494783A JP S5972161 A JPS5972161 A JP S5972161A
- Authority
- JP
- Japan
- Prior art keywords
- groove
- region
- layer
- type
- oxide film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
- H10B12/37—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor being at least partially in a trench in the substrate
Landscapes
- Element Separation (AREA)
- Semiconductor Integrated Circuits (AREA)
- Semiconductor Memories (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP58164947A JPS5972161A (ja) | 1983-09-09 | 1983-09-09 | 半導体記憶装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP58164947A JPS5972161A (ja) | 1983-09-09 | 1983-09-09 | 半導体記憶装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5972161A true JPS5972161A (ja) | 1984-04-24 |
JPH0310235B2 JPH0310235B2 (enrdf_load_stackoverflow) | 1991-02-13 |
Family
ID=15802873
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP58164947A Granted JPS5972161A (ja) | 1983-09-09 | 1983-09-09 | 半導体記憶装置 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5972161A (enrdf_load_stackoverflow) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4606011A (en) * | 1984-10-31 | 1986-08-12 | Kabushiki Kaisha Toshiba | Single transistor/capacitor semiconductor memory device and method for manufacture |
JPS63172455A (ja) * | 1987-01-09 | 1988-07-16 | Mitsubishi Electric Corp | 半導体記憶装置 |
US4920390A (en) * | 1985-07-02 | 1990-04-24 | Matsushita Electric Industrial Co., Ltd. | Semiconductor memory device and method of fabricating the same |
US4990980A (en) * | 1985-04-16 | 1991-02-05 | Kabushiki Kaisha Toshiba | Semiconductor memory device |
-
1983
- 1983-09-09 JP JP58164947A patent/JPS5972161A/ja active Granted
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4606011A (en) * | 1984-10-31 | 1986-08-12 | Kabushiki Kaisha Toshiba | Single transistor/capacitor semiconductor memory device and method for manufacture |
US4990980A (en) * | 1985-04-16 | 1991-02-05 | Kabushiki Kaisha Toshiba | Semiconductor memory device |
US4920390A (en) * | 1985-07-02 | 1990-04-24 | Matsushita Electric Industrial Co., Ltd. | Semiconductor memory device and method of fabricating the same |
JPS63172455A (ja) * | 1987-01-09 | 1988-07-16 | Mitsubishi Electric Corp | 半導体記憶装置 |
Also Published As
Publication number | Publication date |
---|---|
JPH0310235B2 (enrdf_load_stackoverflow) | 1991-02-13 |
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