JPS5967937U - semiconductor equipment - Google Patents
semiconductor equipmentInfo
- Publication number
- JPS5967937U JPS5967937U JP16520982U JP16520982U JPS5967937U JP S5967937 U JPS5967937 U JP S5967937U JP 16520982 U JP16520982 U JP 16520982U JP 16520982 U JP16520982 U JP 16520982U JP S5967937 U JPS5967937 U JP S5967937U
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor device
- wiring pattern
- internal
- integrated circuit
- monolithic integrated
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Semiconductor Integrated Circuits (AREA)
- Design And Manufacture Of Integrated Circuits (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
第１図、第２図は従来の定電流向路の回路図、第３図は
本考案の一実施例による定電流回路の回路図である。
１、 ２． ５・・・トランジスタ（内部構成素子）、
３．４．１１・・・抵抗（内部構成素子）。なお図中、
同一符号は同−又は相当部分を示す。1 and 2 are circuit diagrams of a conventional constant current direction path, and FIG. 3 is a circuit diagram of a constant current circuit according to an embodiment of the present invention. 1, 2. 5...Transistor (internal component),
3.4.11...Resistance (internal component). In addition, in the figure,
The same reference numerals indicate the same or equivalent parts.
Claims (1)
積回路よりなる半導体装置において、上記モノリシック
集積回路の内部構成素子の接続状態を選択できる該モノ
リシック集積回路内部の配線パターンを備えたことを特
徴とする半導体装置。 （２）上記配線パターンにより選択可能な内部構成素子
が、その選択により温度特性改善を達成できるものであ
ることを特徴とする実用新案登録請求の範囲第１項記載
の半導体装置。 （３） 上記配線パターンにより選択可能な内部構成
素子が、その選択により電圧特性改善を達成できるもの
であることを特徴とする実用新案登録請求の範囲第１項
記載の半導体装置。 （４）上記配線パターンにより選択可能な内部構成素子
が、ダイオード接続されたトランジスタとベース拡散に
よる抵抗とであることを特徴とする実用新案登録請求の
範囲第１項記載の半導体装置。[Scope of Claim for Utility Model Registration] (1) In a semiconductor device consisting of a monolithic integrated circuit including internal components on the side of a plurality of systems, an internal component of the monolithic integrated circuit in which the connection state of the internal components of the monolithic integrated circuit can be selected. A semiconductor device characterized by having a wiring pattern. (2) The semiconductor device according to claim 1, wherein the internal constituent elements that can be selected by the wiring pattern can improve temperature characteristics by selection. (3) The semiconductor device according to claim 1, wherein the internal constituent elements that can be selected by the wiring pattern can improve voltage characteristics by selection. (4) The semiconductor device according to claim 1, wherein the internal components selectable by the wiring pattern are a diode-connected transistor and a resistor formed by base diffusion.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16520982U JPS5967937U (en) | 1982-10-28 | 1982-10-28 | semiconductor equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16520982U JPS5967937U (en) | 1982-10-28 | 1982-10-28 | semiconductor equipment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5967937U true JPS5967937U (en) | 1984-05-08 |
Family
ID=30362005
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16520982U Pending JPS5967937U (en) | 1982-10-28 | 1982-10-28 | semiconductor equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5967937U (en) |
-
1982
- 1982-10-28 JP JP16520982U patent/JPS5967937U/en active Pending
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