JPS606248U - semiconductor equipment - Google Patents
semiconductor equipmentInfo
- Publication number
- JPS606248U JPS606248U JP9856483U JP9856483U JPS606248U JP S606248 U JPS606248 U JP S606248U JP 9856483 U JP9856483 U JP 9856483U JP 9856483 U JP9856483 U JP 9856483U JP S606248 U JPS606248 U JP S606248U
- Authority
- JP
- Japan
- Prior art keywords
- dividing resistor
- transistor
- voltage
- semiconductor device
- voltage dividing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Amplifiers (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
第１図は従来の過熱保護回路を組込んだ半導体装置の一
例を示す回路図、第２図は第１図の過熱保護回路の等測
的回路図、第３図は第２図回路のトランジスタｈＦＥと
保護動作温度の関係図、第４図は本考案の半導体装置に
おける過熱保護回路の基本回路図、第５図は第４図回路
のトランジスタ及びピンチ抵抗の構成概略断面図、第６
図は第４図のトランジスタｈＦＥとピンチ抵抗値の関係
図、第７図は第４図のとトランジスタｈＦＥと保護動作
温度の関係図である。
Ｖｌ・・・・・・入力定電圧、Ｒ１・・・・・・入力側
分圧抵抗、Ｒ３・・・・・・ピンチ抵抗、Ｔｒ １−−
−−−− ）ランジスタ、５′・・・・・・過熱保護回
路、１１・・・・・・半導体基板。Fig. 1 is a circuit diagram showing an example of a semiconductor device incorporating a conventional overtemperature protection circuit, Fig. 2 is an isometric circuit diagram of the overtemperature protection circuit of Fig. 1, and Fig. 3 is a transistor of the circuit of Fig. 2. 4 is a basic circuit diagram of the overheat protection circuit in the semiconductor device of the present invention; FIG. 5 is a schematic sectional view of the structure of the transistor and pinch resistor of the circuit shown in 4; FIG. 6 is a diagram showing the relationship between hFE and protection operating temperature;
This figure is a diagram showing the relationship between the transistor hFE shown in FIG. 4 and the pinch resistance value, and FIG. 7 is a diagram showing the relationship between the transistor hFE shown in FIG. 4 and the protection operating temperature. Vl... Input constant voltage, R1... Input side voltage dividing resistor, R3... Pinch resistor, Tr 1--
-----) transistor, 5'... overheat protection circuit, 11... semiconductor substrate.
Claims (1)
トランジスタのベースに印加した過熱保護回路を内蔵し
た半導体装置において、前記分圧抵抗の入力側分圧抵抗
に前記トランジスタと同一の半導体基板に形成したピン
チ抵抗を並列接続したことを特徴とする半導体装置。In a semiconductor device having a built-in overheating protection circuit in which a divided voltage obtained by dividing an input constant voltage by a voltage dividing resistor is applied to the base of an overheating limiting transistor, the voltage dividing resistor on the input side of the voltage dividing resistor is the same as that of the transistor. A semiconductor device characterized in that pinch resistors formed on a semiconductor substrate are connected in parallel.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9856483U JPS606248U (en) | 1983-06-24 | 1983-06-24 | semiconductor equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9856483U JPS606248U (en) | 1983-06-24 | 1983-06-24 | semiconductor equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS606248U true JPS606248U (en) | 1985-01-17 |
| JPH0140200Y2 JPH0140200Y2 (en) | 1989-12-01 |
Family
ID=30233954
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9856483U Granted JPS606248U (en) | 1983-06-24 | 1983-06-24 | semiconductor equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS606248U (en) |
-
1983
- 1983-06-24 JP JP9856483U patent/JPS606248U/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0140200Y2 (en) | 1989-12-01 |
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