JPS5965471A - One-dimentional solid-state color image pickup device - Google Patents
One-dimentional solid-state color image pickup deviceInfo
- Publication number
- JPS5965471A JPS5965471A JP57176548A JP17654882A JPS5965471A JP S5965471 A JPS5965471 A JP S5965471A JP 57176548 A JP57176548 A JP 57176548A JP 17654882 A JP17654882 A JP 17654882A JP S5965471 A JPS5965471 A JP S5965471A
- Authority
- JP
- Japan
- Prior art keywords
- region
- photosensitive area
- pixel
- divided
- longitudinal direction
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 claims abstract description 16
- 230000000903 blocking effect Effects 0.000 claims abstract description 15
- 238000003384 imaging method Methods 0.000 claims description 16
- 239000004065 semiconductor Substances 0.000 claims description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 5
- 229910052710 silicon Inorganic materials 0.000 abstract description 5
- 239000010703 silicon Substances 0.000 abstract description 5
- 239000003086 colorant Substances 0.000 abstract description 2
- 238000005259 measurement Methods 0.000 abstract 3
- 238000000034 method Methods 0.000 abstract 1
- 230000004304 visual acuity Effects 0.000 abstract 1
- 239000004020 conductor Substances 0.000 description 8
- 230000009977 dual effect Effects 0.000 description 3
- 230000002265 prevention Effects 0.000 description 3
- 108010010803 Gelatin Proteins 0.000 description 2
- 229920000159 gelatin Polymers 0.000 description 2
- 239000008273 gelatin Substances 0.000 description 2
- 235000019322 gelatine Nutrition 0.000 description 2
- 235000011852 gelatine desserts Nutrition 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000005036 potential barrier Methods 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 239000000020 Nitrocellulose Substances 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 239000000980 acid dye Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000004040 coloring Methods 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- SOCTUWSJJQCPFX-UHFFFAOYSA-N dichromate(2-) Chemical compound [O-][Cr](=O)(=O)O[Cr]([O-])(=O)=O SOCTUWSJJQCPFX-UHFFFAOYSA-N 0.000 description 1
- 238000004043 dyeing Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229920001220 nitrocellulos Polymers 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
- H01L27/14825—Linear CCD imagers
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Facsimile Heads (AREA)
Abstract
Description
【発明の詳細な説明】 〔発明の技術分野〕 本発明は一次元固体力う−撮像装置の改良に関する。[Detailed description of the invention] [Technical field of invention] The present invention relates to improvements in one-dimensional solid-state imaging devices.
周知の如く、−次元固体力ラー撮像装置は、ファクシミ
リ、複写機、文字読取装置等の高解像度が要求される製
品に多用されている。従来、例えばデユア・左チャネル
形の一次元固体力う−撮像装置としては、第１図（ａ）
、 （ｂ） ＊ （ｅ）に示すものが知られている。As is well known, -dimensional solid-state color imaging devices are often used in products that require high resolution, such as facsimiles, copying machines, and character reading devices. Conventionally, for example, a dual left channel type one-dimensional solid-state imaging device is shown in Fig. 1(a).
, (b) * Those shown in (e) are known.
なお、第１図（ａ）は上記装置の平面図、同図（ｂ）
、 （ｅ）は夫々同図（ａ）のＡ−Ａ線。Note that FIG. 1(a) is a plan view of the above device, and FIG. 1(b) is a plan view of the above device.
, (e) are the A-A lines in (a) of the same figure, respectively.
Ｂ−Ｂ線に担う断面図を示す。A sectional view taken along the line B-B is shown.
図中の１はＰ型のシリコン基板゛である。この基板１表
面には、光入射によシ生じた信号電荷をフォトダイ引−
ドに蓄積するための感光領域２が設けられている。同基
板１表面には前記感光領域２を複数のｉ型の半導体領域
（画素）３・・・に分割するＰ＋型のチャネル防止領域
４、このチャネル阻止領域４及び他のチャネル阻止領域
に接し、て電荷転送シフトレジスタ５１．５２ｏ一部る
構成すをｎ 型の埋込みチャネル領域６．６が夫々設け
られている。前記シフトレジスタ５＋＋５２は感光領域
２を該感光領域２の長手方向に対し両サイドから狭むよ
うに配置され。1 in the figure is a P-type silicon substrate. On the surface of this substrate 1, a signal charge generated by light incidence is applied to a photo die.
A photosensitive area 2 is provided for accumulation on the card. On the surface of the substrate 1, there is a P+ type channel prevention region 4 that divides the photosensitive region 2 into a plurality of i-type semiconductor regions (pixels) 3, which is in contact with this channel prevention region 4 and other channel prevention regions, A portion of the charge transfer shift registers 51 and 52o is provided with n-type buried channel regions 6 and 6, respectively. The shift register 5++52 is arranged so as to narrow the photosensitive area 2 from both sides in the longitudinal direction of the photosensitive area 2.
感光領域２に蓄積された信号電荷を出力部に転送する。The signal charges accumulated in the photosensitive area 2 are transferred to the output section.
前記基板１上の第１の絶縁１１ｒ２ ｙ ｌ上には、前
記感光領域２の長手方向の両側端の一部上に延在するよ
うに２つの導体電極８１．８□が設けられている。なお
、この導体電極８１ 。Two conductor electrodes 81.8□ are provided on the first insulator 11r2 y l on the substrate 1 so as to extend over a portion of both ends of the photosensitive region 2 in the longitudinal direction. Note that this conductor electrode 81.
８２と前記基板１間に導体前＠８１ ＋８２下の基板１
の表面に空乏層を生じるような電圧を印加すると、導体
電極８１＋８２下には前記Ｐ＋型のチャネル阻止領域４
を電位の障壁とする電位の井戸が形成される。そして、
この電位の井戸は、夫々前記電位の障壁により独立して
光信号によ多発生した電荷を蓄積する画素３・・・とじ
て°動作する。また、前記各画素３・・・からの信号電
荷は、笠記制御電極によシ前記シフトレジスタ６１ ＋
５２を経て出力部よ如出力信号として取シ出される。Between 82 and the board 1, conductor front @81 + board 1 below 82
When a voltage is applied to generate a depletion layer on the surface of the P+ type channel blocking region 4 under the conductor electrodes 81+82,
A potential well is formed with a potential barrier of . and,
This potential well operates as the pixel 3, which independently accumulates the charges generated by the optical signal due to the potential barrier. Further, the signal charge from each pixel 3 is transferred to the shift register 61 + by the Kasaki control electrode.
52, and is outputted as an output signal to the output section.
前記第１の絶縁膜７１上には、各画素３・・・からの信
号電荷を前記シフトレジスタ５Ｉ 、５２へ転送するの
を制御する制御電極９１ ．９２が前記導体電極８１＋
８２に近接して設けられている。壕だ、同絶縁膜７Ｉ上
に前記シフトレジスｐ５１ ＊５ｚの一部を構成する転
送電極１０％１θ２が設けられている。前記導体前に？
ｉ、８１＋８□等を含む前記第１の絶縁膜ｚＩ上には第
２の絶縁膜７２が形成され、該第２の絶縁膜７１上には
前記感光領域２の大部分に対応する部分にのみ間隙部１
１を有するＡＩからなる光シールド膜１２里 、１２２
が形成されている。との光シールド膜１２１，１２２を
含む前記第２の絶縁膜７２上にはリンガラスからなる表
面保護膜１３が形成され、該表面保護膜１３上には前記
各画素３・・・に対応してカラーフィルター１４が形成
されている。なお、このカラーフィルター１４は前記感
光領域２め長手方向に緑、赤、青色のフィルター１５１
ｍ１５２ ．１５Ｂを１ユニツトとして順次並べた
ものである。々お、前記カラーフィルター１４は、一般
に写真製版の応用によシストライプ状あるいはモＶイク
状のパターンを前記表面保護膜１３上に形成し、それを
染色等の処理によシ所定の分光特性をもつ着色／？ター
ンを得ることにより行う。即ち、前記録、赤、青色の各
フィルタ−１５ｔ、１５２１５３間には該フィルター１
５１〜７５３を保護する例えばニトロセルロースからな
る申開層（図示せず）を形成し、かつ前ｎＣ）フィルタ
＝２５、〜１５３の母体としては例えば重クロム酸塩を
添加したゼラチンを使用し、かかるゼラチンを酸性染料
等により染色し、これにより緑赤、宵色の各フィルター
１５１〜１５３を形成する。゛前記カラーフィルター１
４を含む前記表面保護膜１３上には該カラーフィルター
１４を保護する光透過性の良好な例えばニトロセル口。Control electrodes 91 . . . on the first insulating film 71 control the transfer of signal charges from the pixels 3 . 92 is the conductor electrode 81+
82. A transfer electrode 10% 1θ2 forming a part of the shift register p51*5z is provided on the same insulating film 7I. Before said conductor?
A second insulating film 72 is formed on the first insulating film zI including i, 81+8□, etc., and a second insulating film 72 is formed on the second insulating film 71 only in a portion corresponding to most of the photosensitive area 2. Gap 1
12, 122
is formed. A surface protection film 13 made of phosphorus glass is formed on the second insulating film 72 including the light shield films 121 and 122, and on the surface protection film 13 there are formed a surface protection film 13 corresponding to each of the pixels 3... A color filter 14 is formed. Note that this color filter 14 includes green, red, and blue filters 151 in the longitudinal direction of the second photosensitive area.
m152. 15B are arranged in sequence as one unit. Generally, the color filter 14 is formed by forming a stripe-like or movable pattern on the surface protection film 13 by applying photolithography, and then dyeing the pattern to obtain predetermined spectral characteristics. Coloring with/? This is done by taking a turn. That is, between the previous recording, red and blue filters 15t and 152153, the filter 1 is
A layer (not shown) made of, for example, nitrocellulose is formed to protect the filters 51 to 753, and gelatin to which dichromate is added is used as the matrix for the filters 25 and 153, The gelatin is dyed with an acid dye or the like to form green-red and evening-colored filters 151 to 153.゛The color filter 1
On the surface protection film 13 including the color filter 14, a nitrocell opening having good light transmittance for protecting the color filter 14 is provided.
−スからなるオーバーコート層１６が形成されている。- an overcoat layer 16 consisting of a glass is formed.
次に、上記構造の一次元固体力う−撮像装置の動作につ
いて説明する。まず、光シールド膜’２１’＊１２Ｈの
間隙部１１から各画素３・・・に光Ａ；入射すると、各
画素３・・・で電荷が発生する。Next, the operation of the one-dimensional solid state imaging device having the above structure will be explained. First, when light A enters each pixel 3 through the gap 11 of the light shield film '21'*12H, a charge is generated in each pixel 3.
ここで制御電極９２をＯＮすることによシ、チャネル阻
止領域４で夫々仕切られた各面子３・・・に蓄積された
信号電荷は導体正、極９２によりその量を調整されて電
荷転送シフトレジスタ１２□に転送され、順次出力部（
図示せず）よ！１１ 読み出される。By turning on the control electrode 92, the signal charge accumulated on each face 3 separated by the channel blocking region 4 becomes a positive conductor, and the amount is adjusted by the pole 92 and the charge transfer is shifted. It is transferred to the register 12□ and sequentially output to the output section (
(not shown)! 11 Read out.
しかしながら、前述した構造の一次元固体力う−撮像装
置においては、カラーフィルター１４が緑、赤、青色の
フィルター１５．〜１５３からなるユニットを順次感光
領域２の長手方向に並べた構造となっているため、高解
像度を得ようとすると前記ユニットを多数釜べて多画素
化しなければならない。従って、チップの感光領域２の
長手方向のサイズが極端に大きくなるという欠点をもっ
ていた。このことは、最近−次元固体力ラー撮像装置に
おいて、感光領域２の長手方向のピッチを微細加工技術
によシ最小ピッチに形成してもなお不十分である。However, in the one-dimensional solid-state imaging device having the structure described above, the color filters 14 are green, red, blue filters 15. Since the structure is such that units consisting of .about.153 are sequentially arranged in the longitudinal direction of the photosensitive area 2, if high resolution is to be obtained, a large number of the units must be assembled to provide a large number of pixels. Therefore, there is a drawback that the size of the photosensitive area 2 of the chip in the longitudinal direction becomes extremely large. For this reason, even if the pitch in the longitudinal direction of the photosensitive areas 2 is formed to the minimum pitch using microfabrication technology in recent -dimensional solid-state image pickup devices, it is still insufficient.
本発明は上記事情に鑑みてなされたもので。 The present invention has been made in view of the above circumstances.
チップの感光領域長手方向のサイズを大きくすることな
く高解像度が得られる一次元固体カラー撮像装置を提供
することを目的とするものである。It is an object of the present invention to provide a one-dimensional solid-state color imaging device that can obtain high resolution without increasing the size of the photosensitive area of the chip in the longitudinal direction.
本発明は、チャネル阻止領域を半導体基板表面に、該基
板表面に設けた感光領域を該感光領域の長手方向及びこ
れと直交する方向に分割するように設けるとともに、カ
ラーフィルターを前記基板上の絶縁膜に前記チャネル阻
止領域で分割された各画素に対応するように設けること
によって、チップの感光領域長手方向のサイズを大きく
するととｋ〈高解像度化を図ったものである。In the present invention, a channel blocking region is provided on the surface of a semiconductor substrate, a photosensitive region provided on the surface of the substrate is divided into a longitudinal direction of the photosensitive region and a direction perpendicular thereto, and a color filter is provided on an insulating film on the substrate. By providing the film so as to correspond to each pixel divided by the channel blocking region, the size of the photosensitive region of the chip in the longitudinal direction can be increased, and higher resolution can be achieved.
本発明の一実施例であるデュアルチャネル形の一次元固
体力う−撮像装置を第２図（ａ） 、 （ｂ）を参照し
て説明する。なお、第１図（ａ） 、 （ｂ）、 （ｃ
）図示の従来の一次元固体力う−払・＠装「イと同部材
のものは同符号を付して貌１明を省略する。A dual channel type one-dimensional solid-state imaging device which is an embodiment of the present invention will be described with reference to FIGS. 2(a) and 2(b). In addition, Fig. 1 (a), (b), (c
) The same parts as those shown in the figure are given the same reference numerals and the descriptions are omitted.
本発明の固体カラー撮像装置は、従来のそれと比べ、シ
リコン基板１表面に従来の感光領域よシ該感光領域の長
手方向と直交する方向の寸法が幾分大きい感光領域２１
を設けた点と Ｐ＋型のチャネル阻止領域２２をシリコ
ン基板１に、前記感光領域２１を該感光伊竣２１の長手
方向及びこれと直交する方向に分割して複数のｉ型の半
導体領域（画素）２３を設けた点と、カラーフィルター
２４を表面保睦膜１３上に前記チャネル阻止領域２２で
分割された各画素２３・・・に対応するように設けた点
とが異なる。前記カラーフィルター２４は、緑（Ｇ）、
赤（８）、青（Ｂ）色のフィルター２５．．２５２ ．
２５３を１ユニツトとした組み合せからなり、その形状
は例えば第３図に示す如く前記各画素２３・・・に対応
して緑色のフィルター２５１を感光領域２１の長手方向
に対し蛇行状に配置し、残シの各画素２３・・・に対応
して赤、青色のフィルター２５２ ＋２５ｇを適宜配
置した構造となっている。The solid-state color imaging device of the present invention has a photosensitive area 21 on the surface of a silicon substrate 1 which has a somewhat larger dimension in a direction orthogonal to the longitudinal direction of the photosensitive area than the conventional photosensitive area.
A plurality of i-type semiconductor regions (pixel ) 23 and that color filters 24 are provided on the surface protective film 13 so as to correspond to each pixel 23 divided by the channel blocking region 22. The color filter 24 is green (G),
Red (8) and blue (B) color filters 25. ．． 252.
For example, as shown in FIG. 3, green filters 251 are arranged in a meandering manner in the longitudinal direction of the photosensitive area 21 in correspondence with each of the pixels 23... The structure is such that red and blue filters 252+25g are appropriately arranged corresponding to each of the remaining pixels 23.
しかして、前述した構造の一次元固体力う−撮像装置に
よれば、Ｐ＋型のチャネル阻止領域２２が、感光領域２
１を該感光拡域２１の長手方向及びこれと直交する方向
に分割するようにＰ型のシリコン基板１表面に設けられ
ているとともに、緑、赤、青色のフィルター２５１〜２
５３がチャネル阻止領域２２によって分割された各画素
２３・・・に対応して表面保護膜１３上に設けられた構
造となっている。従って、従来と本発明の固体−撮像装
置において、同じチップの長手方向の一定の長さについ
て注目すれば、本発明の場合従来と比べ画素数を２倍に
することができる。これによシ本発明の装置によれば、
感光領域の長手方向と直交する方向の寸法を従来よシ幾
分大きくしかつ感光領域の長手方向の寸法を変えない状
態で従来の装置と比べ約２倍の解像度を得ることができ
る。According to the one-dimensional solid-state imaging device having the above-described structure, the P+ type channel blocking region 22 is formed in the photosensitive region 2.
Green, red, and blue filters 251 to 2 are provided on the surface of the P-type silicon substrate 1 so as to divide the photosensitive area 1 into the longitudinal direction of the light-sensitive expanding area 21 and the direction perpendicular thereto.
53 is provided on the surface protection film 13 corresponding to each pixel 23 divided by the channel blocking region 22. Therefore, if attention is paid to the constant length in the longitudinal direction of the same chip in the conventional solid-state imaging device and the present invention, the number of pixels can be doubled in the present invention compared to the conventional one. Accordingly, according to the device of the present invention,
By making the dimension in the direction perpendicular to the longitudinal direction of the photosensitive area somewhat larger than in the conventional apparatus and keeping the longitudinal dimension of the photosensitive area unchanged, it is possible to obtain approximately twice the resolution compared to the conventional apparatus.
゛また。上記実施例の如く、カラーフィルター２４を構
成する緑（Ｇ）′色のフィルター２５１・・・を前記各
画素２３・・・に対応して感光領域２１の長手方向に対
し蛇行状に配置し、かつ残りの各画素２３・・・に対応
して赤（Ｒ）、青ω）色のフィルター２５２・・・、２
５３・・・を適宜配置すれば、緑（Ｇ）色のフィルター
２ｐｌ・・・に対応した緑信号の感光領域２１の長手方
向に対し垂直方向の解像度が良好と々る。゛Again. As in the above embodiment, green (G) color filters 251 constituting the color filter 24 are arranged in a meandering manner in the longitudinal direction of the photosensitive area 21 corresponding to each of the pixels 23, and And red (R), blue ω) color filters 252..., 2 correspond to the remaining pixels 23...
53..., the resolution in the direction perpendicular to the longitudinal direction of the photosensitive area 21 of the green signal corresponding to the green (G) filter 2pl... can be improved.
なお、上記実施例ではカラーフィルターとして緑、赤、
青色の原色型を用いたが、これに限定されない。例えば
黄色とシアン色を用いた補色型を適用し、黄色、シアン
色、黄色とシアン色の重なシ部分よシなる緑色及び無色
を適宜組み合わせてもよい。また、前記録（Ｇ）、赤（
臣、宵Φ）色のフィルターの組み合わせは、上記実施例
の如く第３図の場合に限らず、第４図（ａ） 、 （ｂ
） 。In the above embodiment, green, red, and
Although the primary color type of blue is used, the present invention is not limited to this. For example, a complementary color type using yellow and cyan may be applied, and yellow, cyan, green and colorless colors may be appropriately combined in the overlapping area of yellow and cyan. Also, previous record (G), red (
The combination of color filters is not limited to the case shown in FIG. 3 as in the above embodiment, but also shown in FIGS.
).
（ｅ）に示すように配置してもよい。It may be arranged as shown in (e).
以上詳述した如く本発明によれば、従来と比ベチップの
感光領域長手方向のサイズを大きくすることなく高解像
度を達成できる信頼性の高い一次元固体力う−撮像装置
を提供できるものである。As detailed above, according to the present invention, it is possible to provide a highly reliable one-dimensional solid-state imaging device that can achieve high resolution without increasing the longitudinal size of the photosensitive region of the chip compared to the conventional one. .
第１図（、）は、従来のデュアルチャネル形の一次元固
体カラー撮像装置の平面図、同図（ｂ）は同図（ａ）の
Ａ−ｈｉｍに沿う断面図、同図（Ｃ）は同図（ａ）のＢ
−Ｂ線に沿う断面図、第２図（ａ）は本発明の一実施例
であるデュアルチャネル形の一次元固体力う−撮像装置
の平面図、同図（ｂ）Ｆｉ同図（ａ）のＡ−Ａ線に沿う
断面図、第３図は第２図（ａ） 、 （ｂ）図示の撮像
装置に用いられるカラーフィルターの平面図、第４図（
ａ） 、 （ｂ）＃ （ｅ）は夫々第３図図示のカラー
フィルターを構成する緑（Ｇ）、赤（６）、青ω）色の
フィルターの他の配置例を示す平面図である。
１・・・Ｐ型のシリコン基板、５１ｅ５２・・・電荷転
送シフトレジスタ、６・・・計則の埋込みチャネル領域
、７□ 、７２・・・絶縁膜ｓ８１ ＋８２・・・導体
電極−９１ｅ９２・・・制御電極、ｉｏｌ、ｚｏ２・・
・転送電極、１１・・・間隙部、１２１，１２２・・・
Ａｌ ２＞・らなる光シールド膜、１３・・・表面保訛
膜、１６・・・メーパーコート層、２１・・・感光領域
、２２・・・Ｐ＋型のチャネル阻止領域、２３・・・ｎ
＋型の半導体領域（画素）、２４・・・カラーフィルタ
ー。
２５１・・・緑色のフィルター、２５２・・・赤色のフ
ィルター、２５３・・・青色のフィルター。
出願人代理人 弁理士 鈴 江 武 彦第 ３Ｅ１１
ンｂ３
一３６二−FIG. 1(,) is a plan view of a conventional dual-channel one-dimensional solid-state color imaging device, FIG. 1(b) is a sectional view taken along A-him in FIG. 1(a), and FIG. B in figure (a)
2(a) is a plan view of a dual channel type one-dimensional solid state imaging device which is an embodiment of the present invention; FIG. 2(b) is a sectional view taken along line B; FIG. 2(a), (b) a plan view of the color filter used in the illustrated imaging device, and FIG. 4 (
a), (b) #(e) are plan views showing other examples of arrangement of green (G), red (6), and blue (ω) color filters constituting the color filter shown in FIG. 3, respectively; DESCRIPTION OF SYMBOLS 1...P-type silicon substrate, 51e52...Charge transfer shift register, 6...Metal buried channel region, 7□, 72...Insulating film s81 +82...Conductor electrode -91e92...・Control electrode, iol, zo2...
・Transfer electrode, 11... Gap part, 121, 122...
A light shielding film consisting of Al 2>, 13... surface protection film, 16... mapper coat layer, 21... photosensitive region, 22... P+ type channel blocking region, 23... n
+ type semiconductor region (pixel), 24...color filter. 251...green filter, 252...red filter, 253...blue filter. Applicant's agent Patent attorney Takehiko Suzue 3E11 Nb3 1362-
Claims (2)
素を構成する感光領域と、前記基板表面に設けられ、前
記感光領域の長手方向及びとれと直交する方向に分割し
て複数の画素を形成するチャネル阻止領域と、同基板表
面に設けられ前記各画素に蓄積される信号電荷を転送す
る電荷転送シフトレジスタと、前記基板上の第１の絶縁
膜上に設けられ、前記各画素からの信号電荷を前記電荷
転送シフトレジスタへ転送するのを制御する制御電極と
、前記第１の絶縁膜上の第２の絶縁膜上に設けられ前記
感光領域に対応した部分に間隙部を有する光シールド膜
と、前記第２の絶縁膜上の表面保護膜上に前記チャネル
阻止領域で分割された各画素に対応するように設けられ
たカラーフィルターとを具備することを特徴とする一次
元固体力う−撮像装置。(1) A semiconductor substrate, a photosensitive area provided on the surface of the substrate and forming a plurality of pixels, and a photosensitive area provided on the surface of the substrate and divided in a direction perpendicular to the longitudinal direction and the edge of the photosensitive area to form a plurality of pixels. a channel blocking region to be formed; a charge transfer shift register provided on the surface of the substrate to transfer signal charges accumulated in each pixel; and a charge transfer shift register provided on the first insulating film on the substrate to transfer signal charges accumulated in each pixel. a control electrode for controlling the transfer of signal charges to the charge transfer shift register; and a light shield provided on a second insulating film on the first insulating film and having a gap in a portion corresponding to the photosensitive area. and a color filter provided on a surface protection film on the second insulating film so as to correspond to each pixel divided by the channel blocking region. - Imaging device.
長手方向に対し蛇行状に設け、残シの各画素に対応して
青と赤色のフィルターを設けたことを特徴とする特許請
求の範囲第１項記載の一次元固体力う−撮像装置。(2) A patent claim characterized in that a green filter is provided corresponding to each pixel in a meandering manner in the longitudinal direction of the photosensitive area, and blue and red filters are provided corresponding to each remaining pixel. A one-dimensional solid-state imaging device according to scope 1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57176548A JPS5965471A (en) | 1982-10-07 | 1982-10-07 | One-dimentional solid-state color image pickup device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57176548A JPS5965471A (en) | 1982-10-07 | 1982-10-07 | One-dimentional solid-state color image pickup device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5965471A true JPS5965471A (en) | 1984-04-13 |
| JPS6159538B2 JPS6159538B2 (en) | 1986-12-17 |
Family
ID=16015505
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57176548A Granted JPS5965471A (en) | 1982-10-07 | 1982-10-07 | One-dimentional solid-state color image pickup device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5965471A (en) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5525218A (en) * | 1978-08-11 | 1980-02-22 | Toshiba Corp | Solid state pickup device |
-
1982
- 1982-10-07 JP JP57176548A patent/JPS5965471A/en active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5525218A (en) * | 1978-08-11 | 1980-02-22 | Toshiba Corp | Solid state pickup device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6159538B2 (en) | 1986-12-17 |
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