JPH026273B2 - - Google Patents
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- Publication number
- JPH026273B2 JPH026273B2 JP54126844A JP12684479A JPH026273B2 JP H026273 B2 JPH026273 B2 JP H026273B2 JP 54126844 A JP54126844 A JP 54126844A JP 12684479 A JP12684479 A JP 12684479A JP H026273 B2 JPH026273 B2 JP H026273B2
- Authority
- JP
- Japan
- Prior art keywords
- color
- light
- light absorption
- layer
- color filter
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
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- 239000000758 substrate Substances 0.000 claims description 29
- 239000004065 semiconductor Substances 0.000 claims description 21
- 230000031700 light absorption Effects 0.000 claims description 18
- 238000003384 imaging method Methods 0.000 claims description 12
- 230000001681 protective effect Effects 0.000 claims description 7
- 230000002265 prevention Effects 0.000 claims description 6
- 238000006243 chemical reaction Methods 0.000 claims description 5
- 239000011159 matrix material Substances 0.000 claims description 4
- 239000000203 mixture Substances 0.000 claims description 4
- 239000010410 layer Substances 0.000 description 27
- 108010010803 Gelatin Proteins 0.000 description 12
- 229920000159 gelatin Polymers 0.000 description 12
- 239000008273 gelatin Substances 0.000 description 12
- 235000019322 gelatine Nutrition 0.000 description 12
- 235000011852 gelatine desserts Nutrition 0.000 description 12
- 239000003086 colorant Substances 0.000 description 6
- 239000000975 dye Substances 0.000 description 6
- 238000002156 mixing Methods 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 239000007864 aqueous solution Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 238000009792 diffusion process Methods 0.000 description 5
- 239000012535 impurity Substances 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 239000011241 protective layer Substances 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 239000004372 Polyvinyl alcohol Substances 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- 239000001045 blue dye Substances 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 230000000295 complement effect Effects 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000004043 dyeing Methods 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 229920002451 polyvinyl alcohol Polymers 0.000 description 2
- 239000001044 red dye Substances 0.000 description 2
- 229910000077 silane Inorganic materials 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 230000003595 spectral effect Effects 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 239000001043 yellow dye Substances 0.000 description 2
- 206010047571 Visual impairment Diseases 0.000 description 1
- JOSWYUNQBRPBDN-UHFFFAOYSA-P ammonium dichromate Chemical compound [NH4+].[NH4+].[O-][Cr](=O)(=O)O[Cr]([O-])(=O)=O JOSWYUNQBRPBDN-UHFFFAOYSA-P 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000011247 coating layer Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- MCPLVIGCWWTHFH-UHFFFAOYSA-L methyl blue Chemical group [Na+].[Na+].C1=CC(S(=O)(=O)[O-])=CC=C1NC1=CC=C(C(=C2C=CC(C=C2)=[NH+]C=2C=CC(=CC=2)S([O-])(=O)=O)C=2C=CC(NC=3C=CC(=CC=3)S([O-])(=O)=O)=CC=2)C=C1 MCPLVIGCWWTHFH-UHFFFAOYSA-L 0.000 description 1
- AJDUTMFFZHIJEM-UHFFFAOYSA-N n-(9,10-dioxoanthracen-1-yl)-4-[4-[[4-[4-[(9,10-dioxoanthracen-1-yl)carbamoyl]phenyl]phenyl]diazenyl]phenyl]benzamide Chemical compound O=C1C2=CC=CC=C2C(=O)C2=C1C=CC=C2NC(=O)C(C=C1)=CC=C1C(C=C1)=CC=C1N=NC(C=C1)=CC=C1C(C=C1)=CC=C1C(=O)NC1=CC=CC2=C1C(=O)C1=CC=CC=C1C2=O AJDUTMFFZHIJEM-UHFFFAOYSA-N 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920002189 poly(glycerol 1-O-monomethacrylate) polymer Polymers 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/10—Circuitry of solid-state image sensors [SSIS]; Control thereof for transforming different wavelengths into image signals
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Multimedia (AREA)
- Signal Processing (AREA)
- Color Television Image Signal Generators (AREA)
Description
【発明の詳細な説明】
本発明は、カラー固体撮像素子に関し、さらに
詳述すれば、色フイルターを備えたカラー固体撮
像素子に関するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a color solid-state image sensor, and more specifically, to a color solid-state image sensor equipped with a color filter.
最近、工業用あるいは家庭用のVTRの普及に
伴なつて、小型、軽量で使い易いテレビカメラの
需要が高まつてきている。そこで、半導体集積回
路（一般にIC又はLSIと称している。）を使用し
た固体テレビカメラが注目されている。この固体
テレビカメラは、従来の撮像管の面板および蓄積
電荷を電気信号として取り出す手段がIC基板に
設けられ、独立した固体撮像素子になつている。
これは電子ビームを使用しないため、安定性がよ
く、消費電力が少なく、取り扱いが簡便であるな
どの点で撮像管より優れており、次代のテレビカ
メラとして期待されている。 Recently, with the spread of VCRs for industrial and home use, the demand for small, lightweight, and easy-to-use television cameras has been increasing. Therefore, solid-state television cameras using semiconductor integrated circuits (generally referred to as ICs or LSIs) are attracting attention. This solid-state television camera has a conventional image pickup tube face plate and means for extracting the accumulated charge as an electric signal on an IC board, making it an independent solid-state image sensor.
Since it does not use an electron beam, it is superior to an image pickup tube in that it is more stable, consumes less power, and is easier to handle, and is expected to become the next generation television camera.
本発明に光に基づく雑音が少なく、且解像度の
高い鮮明な色フイルターを具備したカラー固体撮
像素子を提供する。 The present invention provides a color solid-state image pickup device with less light-based noise and a clear color filter with high resolution.
本発明の要点は、少なくとも受光領域とこの領
域で発生するキヤリアを電気信号として取り出す
ためのスイツチング素子を有する半導体基板上
に、少なくともこのスイツチング素子の出力端領
域に対応させて黒色フイルターに代表される光吸
収層を配し、この上部に色フイルターを設けるも
のである。 The gist of the present invention is to provide a semiconductor substrate having at least a light receiving area and a switching element for extracting the carrier generated in this area as an electric signal, and a black filter represented by a black filter, which corresponds to at least the output end area of the switching element. A light absorption layer is arranged on top of which a color filter is provided.
以下、実例を用いて本発明を詳細に説明する。 Hereinafter, the present invention will be explained in detail using examples.
第１図は、本発明のカラー固体撮像素子を用い
たパツケージの概略構成図である。所定のピン脚
を持つたパツケージ枠３に、垂直走査回路領域２
１、水平走査回路領域２２、そして、マトリツク
ス状のレイアウトを有した受光素子領域２３を有
した半導体２がはめこまれ、さらに、上記基体上
に所定のパターンを有したカラーフイルター１が
形成されてなる。図では、カラーフイルターと半
導体基体とが個別に形成されて、のち組合わされ
るが如く描れているが、実際は半導体基体上に一
体化されてカラーフイルターが形成される。この
ことは後述の説明で明らかとなろう。 FIG. 1 is a schematic diagram of a package using the color solid-state image sensor of the present invention. A vertical scanning circuit area 2 is placed on a package frame 3 having predetermined pin legs.
1. A semiconductor 2 having a horizontal scanning circuit area 22 and a light-receiving element area 23 having a matrix layout is fitted, and furthermore, a color filter 1 having a predetermined pattern is formed on the base. Become. In the figure, the color filter and the semiconductor substrate are depicted as being formed separately and then combined, but in reality, the color filter is formed by being integrated on the semiconductor substrate. This will become clear in the explanation below.
撮像レンズ（図示せず）から入つた光線は、カ
ラーフイルター１により色分離され、次いで、マ
トリツクス状に配置した光ダイオードを含む絵素
（画素ともいう）により信号は電気信号に変換さ
れる。基体に内蔵された水平(H)と垂直（Ｖ）の走
査回路により、各絵素の信号が読み出される。こ
の半導体基体２は、パツケージ３に組み込んで収
納されている。 A light beam entering from an imaging lens (not shown) is separated into colors by a color filter 1, and then the signals are converted into electrical signals by picture elements (also called pixels) including photodiodes arranged in a matrix. Signals from each picture element are read out by horizontal (H) and vertical (V) scanning circuits built into the base. This semiconductor substrate 2 is assembled and housed in a package 3.
この固体撮像素子は、被写体、すなわち、空間
的に検出された光情報を、次々と時系列化して電
気信号に変換するもので、一般に、光電変換機能
（受光部とも別称）と走査機能とを備えた回路構
成を設けて形成されている。具体的には、これら
の機能を満たすために、感光素子（受光領域とも
別称）とスイツチング素子とから成る多数の小さ
な領域が絵素に対応させてマトリツクス状に配列
されている。 This solid-state image sensor converts the subject, that is, spatially detected light information, into an electrical signal by sequentially converting it into a time series, and generally has a photoelectric conversion function (also known as a light receiving section) and a scanning function. It is formed with a circuit configuration provided. Specifically, in order to fulfill these functions, a large number of small areas consisting of photosensitive elements (also called light-receiving areas) and switching elements are arranged in a matrix in correspondence with the picture elements.
この様に、固体撮像素子は絵素が個々に分離さ
れているので、クロツクパルスによる読み出し信
号が各々どの絵素に対応しているかを容易に判断
できる。そこで、固体撮像素子では、これら個々
の絵素に対応させて色フイルターを配置させるこ
とが可能となる。 In this way, since the picture elements of the solid-state imaging device are separated into individual picture elements, it is easy to determine which picture element each readout signal based on a clock pulse corresponds to. Therefore, in a solid-state image sensor, it is possible to arrange color filters in correspondence with these individual picture elements.
この様な固体撮像素子は前述の様に光電変換機
能と走査機能とを備えていなければならないが、
これを実現させる方式として、XY（座標）指定
撮像方式と、信号転送撮像方式との２種類の方式
に大別される。普通、図に示すように上部に水平
走査回路(H)、左隅にインターレーススイツチを備
えた垂直走査回路（Ｖ）が設けられる。前者は
MOSトランジスターを適宜レイアウトさせて形
成し、また後者はCCDによるレイアウトを形成
させて行なうことが出来る。両方とも同様の効果
および特性を示し差違は現われず良好な画像が得
られた。勿論、MOSトランジスターとCCDとを
互いに折衷させて組合せて行なつた方式も同様の
効果が得られた。 As mentioned above, such a solid-state image sensor must have a photoelectric conversion function and a scanning function.
Methods for realizing this can be roughly divided into two types: an XY (coordinate) designated imaging method and a signal transfer imaging method. Usually, as shown in the figure, a horizontal scanning circuit (H) is provided at the top and a vertical scanning circuit (V) with an interlace switch is provided at the left corner. The former is
The MOS transistors can be formed by suitably laying them out, and the latter can be formed by forming a layout using a CCD. Both showed similar effects and characteristics, and good images were obtained without any difference. Of course, a similar effect could be obtained using a system in which a MOS transistor and a CCD were combined.
一般に光電変換機能は、上述の様にSi基板内に
形成された光電変換素子のPN接合によつて行な
うのが普通である。MOSトランジスタをスイツ
チ素子とし、この一方の不純物領域を受光領域と
した固体撮像素子の例を説明する。 Generally, the photoelectric conversion function is normally performed by a PN junction of a photoelectric conversion element formed in a Si substrate as described above. An example of a solid-state image sensor in which a MOS transistor is used as a switch element and one of the impurity regions is used as a light-receiving region will be described.
第２図は、本発明に使用したカラー固体撮像装
置の回路構成の概略図である。この撮像装置は
484×384素子で全体が構成されている。中央は垂
直スイツチ１１を含んだ光ダイオード（PD）12
アレイであり緑(G)用素子を市松状に並べ、その間
に赤（Ｒ）、青(B)用素子を配列し、２本の垂直信
号出力線SV(G)１３，SV(RB)１４に接続されている。
周辺は水平および垂直スイツチ１５，１１の選択
を行う走査回路であり、上部は水平走査回路１
６、左隅は１組のインターレーススイツチを備え
た垂直設査回路１７である。スイツチ１８，１９
はフイールド切換えパルスF1，F2により交互に
導通する。 FIG. 2 is a schematic diagram of the circuit configuration of the color solid-state imaging device used in the present invention. This imaging device
The entire device is made up of 484 x 384 elements. In the center is a photodiode (PD) 12 containing a vertical switch 11.
It is an array in which elements for green (G) are arranged in a checkerboard pattern, elements for red (R) and blue (B) are arranged between them, and two vertical signal output lines S V (G) 13, S V (RB) are arranged. ) 14.
The periphery is a scanning circuit that selects horizontal and vertical switches 15 and 11, and the upper part is a horizontal scanning circuit 1.
6. The left corner is a vertical design circuit 17 with a set of interlace switches. switch 18, 19
are alternately made conductive by field switching pulses F 1 and F 2 .
この装置の動作を次に説明する。上記垂直走査
回路１７は15.73KHzの周期で垂直走査パルスを
出力する。フイールドパルスは60Hzで切り換わ
り、パルスF1による第１フイールドでは垂直列
選択線LV1，LV2，LV3，LV4，…に、パルスF2に
よる第２フイールドでは１列ずれてLV2，LV3，
LV4，LV5，…に走査パルスが順次送り出される。
一方、水平走査回路１６は384個の画素数に応じ
て決まる7.16MHzの周期で水平走査パルスを出力
する。水平、垂直２つの走査パルス列により、第
１フイールドでは｛（483、384）（484、384）｝の
順に、第２フイールドでは｛（２、１）、（３、
１）｝、｛（482、384））（483、384）｝の順に各画素
の撰択が行われる。第２フイールドでは最初と最
後の列の選択が行なわれないため、次の第１フイ
ールドの選択の際、この分が加算されて信号量が
不均一になる最初および最後の列は垂直帰線期間
に収められるので支障ない。 The operation of this device will be explained next. The vertical scanning circuit 17 outputs vertical scanning pulses at a cycle of 15.73 KHz. The field pulses are switched at 60Hz, and in the first field by pulse F 1 , the vertical column selection lines L V1 , L V2 , L V3 , L V4 , etc. are changed, and in the second field by pulse F 2 , they are shifted by one column to L V2 , L V3 ,
Scanning pulses are sequentially sent out to L V4 , L V5 , and so on.
On the other hand, the horizontal scanning circuit 16 outputs horizontal scanning pulses at a period of 7.16 MHz determined according to the number of 384 pixels. With two horizontal and vertical scanning pulse trains, the first field has the order of {(483, 384) (484, 384)}, and the second field has the order of {(2, 1), (3,
1)}, {(482, 384)) (483, 384)}, each pixel is selected in this order. Since the first and last columns are not selected in the second field, when selecting the next first field, this amount is added and the signal amount becomes uneven.The first and last columns are during the vertical blanking period. There is no problem since it can be accommodated in
次に、この装置の撮像上基本となる重要な特性
を述べてみる。 Next, we will discuss the important characteristics that are fundamental to the imaging of this device.
(i) 緑用孔ダイオードは赤および青用光ダイオー
ドの２倍配列されており、輝度信号の主成分と
なる緑信号を常時得ることができる。また、光
ダイオードは前述のように互いに入り組んだ市
松状に配列されており、ダイオードの集積度が
向上する。これらの結果、限られた画素数で高
い解像度が得られる。(i) The green hole diodes are arranged twice as many as the red and blue photodiodes, so that a green signal, which is the main component of the luminance signal, can always be obtained. Further, as described above, the photodiodes are arranged in an intricate checkerboard pattern, which improves the degree of integration of the diodes. As a result, high resolution can be obtained with a limited number of pixels.
(ii) 緑、赤および青用信号を異なる２つの出力線
より取出すため混色がない、すなわち色分離特
性が良い。(ii) Since the green, red and blue signals are taken out from two different output lines, there is no color mixing, that is, good color separation characteristics.
(iii) １個の素子で緑、赤、青の３原色信号を同時
に取出すことができ、信号処理が簡単となる。(iii) Three primary color signals of green, red, and blue can be extracted simultaneously with one element, which simplifies signal processing.
(iv) ２列を同時に選択するインターレース走査方
式であり、いずれのフイールドにおいても全光
ダイオードの信号が読出されるため、残像が発
生しない。(iv) It is an interlaced scanning method that selects two columns at the same time, and since signals from all photodiodes are read out in both fields, no afterimage occurs.
第３図は本例の主要部平面図である。１２４，
１２５，１２６，１２７は半導体基体に配列され
た不純物拡散領域である。この不純物拡散領域の
一端に、不純物拡散領域に発生するキヤリアを外
部に導出するためのスイツチング素子領域が設け
られている。１３１〜１３６はこのスイツチング
領域に電気的に接続され、且垂直走査回路に接続
されるアルミニウム配線である。このアルミニウ
ム配線が所々幅が広くなつているのは、許し得る
範囲でアルミニウムで半導体基体を覆い、不必要
な光が半導体基体に入射しない様にするに有利な
ためである。 FIG. 3 is a plan view of the main parts of this example. 124,
125, 126, and 127 are impurity diffusion regions arranged in the semiconductor substrate. A switching element region is provided at one end of this impurity diffusion region for guiding carriers generated in the impurity diffusion region to the outside. Reference numerals 131 to 136 denote aluminum wirings electrically connected to this switching region and also connected to the vertical scanning circuit. The reason why the aluminum wiring is wide in some places is that it is advantageous to cover the semiconductor substrate with aluminum to the extent that is permissible and to prevent unnecessary light from entering the semiconductor substrate.
１４１〜１４６は本発明に係わる黒色フイルタ
ーである。たとえば黒色フイルター１４２は絶縁
膜１５０をはさんで隣り合うアルミニウム配線１
３３および１３４の隣接間隙部分１３０を跨座
し、且前記スイツチング素子領域の少なくとも出
力端の一部および垂直、水平走査回路部分（図示
せず）をおおつて設けられている。このアルミニ
ウム等の金属配線は一般に図示した如くストライ
プ状に形成されている。抵抗を小さくする為には
広帯のほうが望ましいが、一般に受光面積の割合
を減少させ、集積度の低下を招いたり、寄生容量
も増加し、かえつて画質を損うので、１〜6μｍ
程度が望ましい。 141 to 146 are black filters according to the present invention. For example, the black filter 142 is connected to the aluminum wiring 1 adjacent to each other with the insulating film 150 in between.
33 and 134, and is provided to cover at least a portion of the output end of the switching element region and the vertical and horizontal scanning circuit portions (not shown). The metal wiring made of aluminum or the like is generally formed in a striped shape as shown in the figure. In order to reduce the resistance, a wide band is preferable, but in general, it reduces the proportion of the light receiving area, lowers the degree of integration, increases parasitic capacitance, and impairs image quality.
degree is desirable.
このストライプ状の金属電極は一般に上記スイ
ツチング素子の出力端領域を覆つて形成されてい
る。 This striped metal electrode is generally formed to cover the output end region of the switching element.
第４図は、本発明のカラー固体撮像素子の受光
部の概略断面図、第３図のｘ−x′の部分断面図で
ある。 FIG. 4 is a schematic sectional view of the light receiving portion of the color solid-state image pickup device of the present invention, and a partial sectional view taken along line xx' in FIG. 3.
半導体基板としてＮ型シリコン基板４１を用
い、このＮ型シリコン基板４１内に不純物拡散等
によつてＰ導電型領域４２がウエル状に形成され
る。なお、図ではウエル全体を示していない。そ
してこのＰ導電型領域４２内に第１、第２、第３
の受光領域が配列される。それらは、たとえば黄
色用の受光領域、緑色用の受光領域、シアン用の
受光領域に対応する。勿論、赤色、青色、緑色の
三原色用の受光領域としても良い。 An N type silicon substrate 41 is used as a semiconductor substrate, and a P conductivity type region 42 is formed in the shape of a well in this N type silicon substrate 41 by impurity diffusion or the like. Note that the figure does not show the entire well. Then, in this P conductivity type region 42, first, second, and third
light-receiving areas are arranged. These correspond to, for example, a yellow light receiving area, a green light receiving area, and a cyan light receiving area. Of course, the light receiving area may be used for the three primary colors of red, blue, and green.
第３図１２４はたとえば黄色用の受光領域で第
４図４３に対応する。また１２５はたとえば緑色
用の受光領域で第４図４４に対応する。受光領域
４３および４４の周縁に、上記受光領域をドレイ
ン領域として共用し、ソース領域４５との間に多
結晶Siゲート電極４６を備えたMOSトランジス
タがスイツチング素子として形成されている。上
記受光領域４３，４４およびＰ導電型領域４２上
の酸化膜１０５が形成されている。前述の如く非
受光領域又は上記スイツチング素子の一部面上に
Al配線が形成されており、上記酸化膜１０５お
よびAl配線はシラン膜（SiO2）からなる絶縁保
護膜１０７によつて覆われて構成されてなる。 124 in FIG. 3 is a light receiving area for yellow, for example, and corresponds to FIG. 43. Further, 125 is a light receiving area for, for example, green color, which corresponds to FIG. 44. A MOS transistor is formed at the periphery of the light receiving regions 43 and 44 as a switching element, using the light receiving region as a drain region and having a polycrystalline Si gate electrode 46 between it and the source region 45. An oxide film 105 is formed on the light receiving regions 43, 44 and the P conductivity type region 42. As mentioned above, on the non-light receiving area or on a part of the switching element,
Al wiring is formed, and the oxide film 105 and the Al wiring are covered with an insulating protective film 107 made of a silane film (SiO 2 ).
この様に、受光領域４３のn+拡散層は、光ダ
イオード用のn+層として、上記ｎ型基板４１上
に形成したＰ型導電層内に集積化されている。こ
のn+−Ｐ−ｎ構造により分光感度が増し、ブル
ーミングなどの画像不良原因の発生が解消されて
いる。 In this way, the n + diffusion layer of the light-receiving region 43 is integrated within the P-type conductive layer formed on the n-type substrate 41 as an n + layer for a photodiode. This n + -Pn structure increases spectral sensitivity and eliminates the causes of image defects such as blooming.
本発明のカラー固体撮像装置は光吸収層が前記
半導体基板上に次の如く配置される点に特徴があ
る。 The color solid-state imaging device of the present invention is characterized in that a light absorption layer is arranged on the semiconductor substrate as follows.
(1) 受光領域を含む半導体集積回路が形成された
半導体基体上に光吸収層が配され、この上部に
所望の色フイルターが配される。(1) A light absorption layer is placed on a semiconductor substrate on which a semiconductor integrated circuit including a light receiving area is formed, and a desired color filter is placed on top of this.
(2) 光吸収層は少なくとも第１の感光領域と隣り
合う第２の感光領域の間隙を覆うことが肝要で
ある。(2) It is important that the light absorption layer covers at least the gap between the first photosensitive area and the adjacent second photosensitive area.
更に次の如き構成とすることに実用上大きな利
点がある。前述の光吸収層は光不要部分に光を通
さないので、シリコン基板内で不必要なフオトキ
ヤリアの発生を防止する。特に前述のスイツチン
グ素子の出力端領域における不必要なフオトキヤ
リアの発生は雑音として出力に含まれることとな
り、特性への影響が極めて大きい。従つて、光吸
収層は、第１の感光領域と隣り合う第２の感光領
域の間隙を覆い、且前記スイツチング素子の出力
端領域に対応させてこの領域上に設けるのが良
い。従つて第３図に例示した如く小面積の光吸収
層として配置することで一応の目的を達し得る。 Furthermore, there is a great practical advantage in having the following configuration. Since the aforementioned light absorption layer does not allow light to pass through unnecessary portions, it prevents the generation of unnecessary photocarriers within the silicon substrate. In particular, the generation of unnecessary photo carriers in the output end region of the switching element described above is included in the output as noise, which has a very large effect on the characteristics. Therefore, it is preferable that the light absorption layer covers the gap between the first photosensitive area and the adjacent second photosensitive area, and is provided on this area so as to correspond to the output end area of the switching element. Therefore, by arranging the light absorbing layer in a small area as illustrated in FIG. 3, the object can be achieved to some extent.
たとえば第５図ｂにBlとして示した如くスト
ライプ状に光吸収層を設けることも可能である。
しかし、第３図に例示した光吸収層の配列は第５
図ａにBlとして示した如き配列である。また設
計に対応して種々変形した光吸収層の配置がある
ことはいうまでもない。 For example, it is also possible to provide the light absorbing layer in a striped pattern as shown as Bl in FIG. 5b.
However, the arrangement of the light absorption layers illustrated in FIG.
This is the arrangement shown as Bl in Figure a. It goes without saying that there are various arrangements of the light absorption layer depending on the design.
一般に光吸収層としてはゼラチン等の有機材料
を用いるのが一般的である。この場合、光吸収層
はたとえば幅３〜6μｍ、長さは約６〜７mmと極
めて細いストライプ状に設けることとなる。この
様な光吸収層はゼラチンの収縮性によりストライ
プが破損しやすい欠点がある。従つて、第５図ａ
の如く、小面積に分断した形状に光吸収層を配す
ることによつて上記の欠点をなくすことができ
る。 Generally, an organic material such as gelatin is generally used as the light absorption layer. In this case, the light absorption layer is provided in the form of extremely thin stripes, for example, 3 to 6 μm in width and approximately 6 to 7 mm in length. Such a light-absorbing layer has the disadvantage that the stripes are easily damaged due to the shrinkage of gelatin. Therefore, Figure 5a
The above drawbacks can be eliminated by arranging the light absorption layer in a shape divided into small areas as shown in FIG.
実施例
所定の受光領域および所定の回路構成に形成さ
れた半導体集積回路を有する半導体基体を準備す
る。この受光領域および半導体集積回路部は通常
の半導体装置の製造方法に従がえば良い。Example A semiconductor substrate having a predetermined light receiving area and a semiconductor integrated circuit formed in a predetermined circuit configuration is prepared. The light-receiving region and the semiconductor integrated circuit section may be formed according to a normal semiconductor device manufacturing method.
第４図に示すごとく半導体基体には、Si基板４
１に設けられたウエル４２内に、受光素子として
の受光領域４３が形成され、さらに、上記基体お
よび上記受光領域４３および４４上に酸化膜１０
５が形成され、非受光領域（受光領域４３および
４４以外のSi基板に該当する）上に厚さ1μ、幅
3μ他のAl配線との間隔が4μ程度の形状を持つた
２本のAl配線層４３３および４３４が形成され、
上記酸化膜１０５およびAl配線層４３３および
４３４上にパツシベーシヨン膜としてのシラン膜
（SiO2）からなる絶縁保護膜１０７が形成されて
なる。 As shown in Fig. 4, the semiconductor substrate includes a Si substrate 4.
A light-receiving region 43 as a light-receiving element is formed in a well 42 provided in 1, and an oxide film 10 is further formed on the base body and the light-receiving regions 43 and 44.
5 is formed with a thickness of 1μ and a width on the non-light receiving area (corresponding to the Si substrate other than the light receiving areas 43 and 44).
Two Al wiring layers 433 and 434 are formed with a spacing of about 4μ from other Al wirings of 3μ.
An insulating protective film 107 made of a silane film (SiO 2 ) as a passivation film is formed on the oxide film 105 and the Al wiring layers 433 and 434.
この半導体基体上に、ゼラチンを回転塗布法で
塗布する。ここで硬化剤としては重クロム酸アン
モニウム（NH4Cr2O7、一般にADCと略称）の
５％、40℃の温水溶液が用いられる。このゼラチ
ン塗布層の厚さは約1μとする。次に、Crマスク
を使用して紫外線露光を行ない上記ゼラチン層を
重合硬化させ、現像処理することにより染色可能
なゼラチンパターン４４２を形成する。ゼラチン
層は幅は3μｍないし6μｍ程度、長さは約13〜14μ
ｍである。次に、赤色、黄色、および青色の各染
料を混合して得られる黒色染色液を約70℃に加熱
し、この中で上記素子を浸漬することにより、ゼ
ラチン層を黒色に染色する。上記赤色染料として
は、ダイアシド１１（商品名）の２％水溶液、上
記黄色染料としては、カヤノールイエロー（商品
名）の0.7％水溶液、そして、上記青色染料とし
ては、メチルブルー（商品名）の２％水溶液を用
いる。 Gelatin is applied onto this semiconductor substrate by a spin coating method. Here, as the curing agent, a 5% hot aqueous solution of ammonium dichromate (NH 4 Cr 2 O 7 , generally abbreviated as ADC) at 40° C. is used. The thickness of this gelatin coating layer is approximately 1 μm. Next, the gelatin layer is polymerized and hardened by exposure to ultraviolet light using a Cr mask, and a dyeable gelatin pattern 442 is formed by development. The gelatin layer has a width of about 3μm to 6μm and a length of about 13 to 14μm.
It is m. Next, the gelatin layer is dyed black by heating a black dyeing solution obtained by mixing red, yellow, and blue dyes to about 70° C. and immersing the element in the solution. The red dye is a 2% aqueous solution of Diacid 11 (trade name), the yellow dye is a 0.7% aqueous solution of Kayanol Yellow (trade name), and the blue dye is Methyl Blue (trade name). A 2% aqueous solution is used.
本発明では黒色染料を、一般に有彩色の色染料
を混合させて形成させたが、赤、黄、青に限らず
赤、緑、青でもよく、また３色に限らず２色の染
料の混合であつても、組合せることにより透過
（光）率が大幅に低下するようなものであればよ
い。また、順次各色染料毎に染めていつてもよ
い。なお、スミノール・ミリング・ブラツク（商
品名）の１％水溶液などのように固有の黒色染料
であつてもよいことは云うまでもない。 In the present invention, the black dye is generally formed by mixing chromatic color dyes, but it is not limited to red, yellow, and blue, but may also be red, green, and blue, and it is also a mixture of two color dyes instead of three colors. Even if it is, it is sufficient as long as the transmittance (light) rate is significantly reduced when combined. Alternatively, each color dye may be dyed sequentially. It goes without saying that a unique black dye such as a 1% aqueous solution of Suminol Milling Black (trade name) may also be used.
次いで、上記フイルター４４２および緑縁保護
膜１０７上にポリグリシジメタクリレート（略称
PGMA）からなる混合防止保護膜１１２を形成
し、上記受光領域４３又は４４に対応した領域に
所定のパターンで厚さ1μｍのゼラチンからなる
色フイルター１０９を形成する。 Next, polyglycidimethacrylate (abbreviation:
A mixing prevention protective film 112 made of (PGMA) is formed, and a color filter 109 made of gelatin with a thickness of 1 μm is formed in a predetermined pattern in an area corresponding to the light receiving area 43 or 44.
この色フイルター１０９は、ゼラチンに感光性
を付与した感光液を回転塗布法などで均一に塗布
し、乾燥させ、感光膜を形成した後、マスク露光
法で所定の受光領域４３および４４の部分だけ光
硬化させ、現像し、該受光領域部分以外の感光膜
を除去する。所定の分光特性を有する染料で、該
受光領域を含む所定部分を染色し、黄色フイルタ
ー１０９を形成する。その後、透明な混色防止保
護膜（中間層とも別称）１１３を被覆する。この
色フイルターの材料として、上述のゼラチンの他
に、ポリビニールアルコールあるいはグリユーな
ども差違なく使用できる。勿論、上記光吸収層の
材料としても、ポリビニールアルコールあるいは
グリユーなども使用できることは言うまでもな
い。 This color filter 109 is made by uniformly applying a photosensitive liquid on gelatin using a spin coating method or the like, drying it to form a photosensitive film, and then applying a mask exposure method to only the predetermined light-receiving areas 43 and 44. It is photocured, developed, and the photoresist film other than the light-receiving area is removed. A yellow filter 109 is formed by dyeing a predetermined portion including the light-receiving region with a dye having predetermined spectral characteristics. Thereafter, a transparent color mixing prevention protective film (also referred to as an intermediate layer) 113 is coated. As a material for this color filter, in addition to the gelatin mentioned above, polyvinyl alcohol or gris may also be used without any difference. It goes without saying that polyvinyl alcohol, green, etc. can also be used as the material for the light absorption layer.
次いで再び混色防止保護層を上記黄色フイルタ
ー１０９の厚さ程度に塗布し、固化後、緑色の受
光領域４４に対応した上記混色防止保護層上に所
定のパターンのゼラチンからなるシアン色のカラ
ーフイルター１１０を形成し、次いで再三、保護
層１１４を上記シアン色フイルター１１０の厚さ
程度に塗布し固化させる。必要ならば、上記保護
層１１４上に反射防止膜を形成し受光効率を上昇
せしめることも可能である。 Next, a color mixture prevention protective layer is applied again to a thickness similar to that of the yellow filter 109, and after solidification, a cyan color filter 110 made of gelatin in a predetermined pattern is applied on the color mixture prevention protective layer corresponding to the green light-receiving area 44. A protective layer 114 is then repeatedly applied to a thickness approximately equal to that of the cyan filter 110 and solidified. If necessary, it is also possible to form an antireflection film on the protective layer 114 to increase the light receiving efficiency.
この実施例では、第１色目に黄色、第２色目に
シアン色のフイルターを配置せしめたが、この順
序は必ずしもこの実施例に限定されないことはい
うまでもない。なお、本実施例において補色系の
３原色として、の残るマゼンダ色は、上記黄色お
よびシアン色フイルターを重ね合わせて形成され
た緑色のカラー信号を、電気回路的に反転させて
形成される。色フイルターの数が少なくて済むの
でこの方が経済的に有利である。勿論、本発明は
初めから補色系の黄色、マゼンタ、シアンの３色
が揃つたものも、あるいは、光の３原色について
も全く同様に良好なカラー固体撮像素子が得られ
た。 In this embodiment, a yellow filter is arranged as the first color, and a cyan filter is arranged as the second color, but it goes without saying that this order is not necessarily limited to this embodiment. In this embodiment, the remaining magenta color, which is one of the three complementary primary colors, is formed by inverting the green color signal formed by overlapping the yellow and cyan filters using an electric circuit. This is economically advantageous because fewer color filters are required. Of course, according to the present invention, a color solid-state image pickup device having the three complementary colors of yellow, magenta, and cyan or the three primary colors of light can be obtained as well.
この様に、黒色フイルターにより、複数のカラ
ーフイルターを露光時の回折およびAl配線から
の反射光の影響を受けることなく、正確にパター
ンを形成することができ、電気的特性の良好な撮
像素子を提供できた。 In this way, the black filter allows multiple color filters to form accurate patterns without being affected by diffraction during exposure or reflected light from Al wiring, creating an image sensor with good electrical characteristics. I was able to provide it.
上述のように写真蝕刻の際の露光は、マスクパ
ターンを介して行なわれる。一方、所定の色フイ
ルターと基板との間には、普通一定の間隔があ
る。しかし、この色フイルターと基板の間に黒色
フイルターが形成されてあるので、露光時の光
は、特に問題の多かつたこの間隔の間隙を通して
回折し、凹凸ある基板表面で不規則に反射して
も、黒色フイルターによつて吸収されてしまうの
でホトマスク背面のホトレジスト層の不要な領域
までも感光させることがなくなり、正確なパター
ン形成が行なえる。この様に、“かぶり現象”の
大きな要因となつていたAl配線４３３および４
３４部分、すなわち、Al配線が最も普通に形成
されている色フイルター周辺部分が上記黒色フイ
ルター４４２によつて蓋われて遮蔽されているた
め、回折し基板面から反射してきてもホトマスク
の不要部分を露光することがなくなりとくに周縁
形状が明瞭な正確なパターンの色フイルターを形
成することができるようになつたものである。 As described above, exposure during photolithography is performed through a mask pattern. On the other hand, there is usually a certain distance between a given color filter and the substrate. However, since a black filter is formed between this color filter and the substrate, the light during exposure is diffracted through this particularly problematic gap and irregularly reflected on the uneven substrate surface. Since the black filter also absorbs the light, unnecessary areas of the photoresist layer on the back side of the photomask are not exposed to light, allowing accurate pattern formation. In this way, the Al wirings 433 and 4, which were a major cause of the "fogging phenomenon"
34, that is, the area around the color filter where Al wiring is most commonly formed, is covered and shielded by the black filter 442, so even if it is diffracted and reflected from the substrate surface, unnecessary parts of the photomask will be blocked. This eliminates the need for exposure and makes it possible to form a color filter with a precise pattern with a clear peripheral shape.
上記黒色フイルターは受光領域以外の垂直走査
回路（Ｖ）および水平走査回路(H)などに必要に応
じて設けても良く、光検知部以外の光不要部分に
光を通さないので、Si基板内で不必要な正孔−電
子対を発生することがなくなる。そのため、リー
ク電流の発生が無くなり、良質な画像を提供し、
また回路構成素子の動作が劣化するのを防止する
ことができた。 The above black filter may be provided in the vertical scanning circuit (V) and horizontal scanning circuit (H) other than the light receiving area as necessary, and since it does not allow light to pass through unnecessary parts other than the photodetecting area, it can be used inside the Si substrate. This eliminates the generation of unnecessary hole-electron pairs. Therefore, there is no leakage current, providing high quality images,
Further, it was possible to prevent the operation of the circuit components from deteriorating.
第１図は本発明のカラー固体撮像素子の実装形
態を説明する図、第２図はカラー固体撮像素子に
用いた回路構成の概略図、第３図は本カラー固体
撮像素子の主要部の平面図、第４図はその要部断
面図、第５図は光吸収層の平面配置を説明する図
である。
１０１……Si基板、１０２……受光領域、１０
５……酸化膜、１０６……Al配線、１０７……
絶縁保護膜、１０８……光吸収層、１０９……色
フイルター、１１２……混色防止保護膜、１……
カラーフイルター、２……半導体基板、３……パ
ツケージ。
Fig. 1 is a diagram explaining the implementation form of the color solid-state image sensor of the present invention, Fig. 2 is a schematic diagram of the circuit configuration used in the color solid-state image sensor, and Fig. 3 is a plan view of the main parts of the color solid-state image sensor. 4 are sectional views of the main parts thereof, and FIG. 5 is a diagram illustrating the planar arrangement of the light absorption layer. 101... Si substrate, 102... Light receiving area, 10
5... Oxide film, 106... Al wiring, 107...
Insulating protective film, 108... Light absorption layer, 109... Color filter, 112... Color mixing prevention protective film, 1...
Color filter, 2...semiconductor substrate, 3...package.
Claims (1)
えた光電変換機能を有する半導体基体と、該基体
上に形成された所定のカラーフイルターとを備え
たカラー固体撮像素子において、上記スイツチン
グ素子の少なくとも出力端子近傍と上記カラーフ
イルターとの間に該カラーフイルターが設けられ
た層と混色防止保護膜を介して絶縁性光吸収層を
設けてなることを特徴とするカラー固体撮像素
子。 ２ 特許請求の範囲第１項において、上記光吸収
層は上記感光素子とスイツチング素子とを有する
絵素相互の少なくとも間隙領域に設けてなること
を特徴とするカラー固体撮像素子。 ３ 特許請求の範囲第１項において、上記光吸収
層はストライプ状の平面パターンを呈してなるこ
とを特徴とするカラー固体撮像素子。 ４ 特許請求の範囲第１項において、上記光吸収
層は複数の光吸収層がマトリツクス状に配されて
なることを特徴とするカラー固体撮像素子。[Scope of Claims] 1. A color solid-state image pickup device comprising a semiconductor substrate having a photoelectric conversion function and including at least a photosensitive element and a switching element, and a predetermined color filter formed on the substrate, 1. A color solid-state imaging device, characterized in that an insulating light absorbing layer is provided between at least the vicinity of an output terminal of the device and the color filter through a layer in which the color filter is provided and a color mixture prevention protective film. 2. The color solid-state imaging device according to claim 1, wherein the light absorption layer is provided at least in a gap region between picture elements having the photosensitive element and the switching element. 3. The color solid-state imaging device according to claim 1, wherein the light absorption layer has a striped planar pattern. 4. The color solid-state imaging device according to claim 1, wherein the light absorption layer is formed by a plurality of light absorption layers arranged in a matrix.
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12684479A JPS5651183A (en) | 1979-10-03 | 1979-10-03 | Color solid image pickup element |
| US06/180,042 US4412236A (en) | 1979-08-24 | 1980-08-21 | Color solid-state imager |
| DE19803031759 DE3031759A1 (en) | 1979-08-24 | 1980-08-22 | SOLID BODY IMAGING DEVICE |
| NL8004768A NL8004768A (en) | 1979-08-24 | 1980-08-22 | SEMICONDUCTOR COLOR IMAGE RECORDER. |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12684479A JPS5651183A (en) | 1979-10-03 | 1979-10-03 | Color solid image pickup element |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59047004A Division JPS605558A (en) | 1984-03-14 | 1984-03-14 | Manufacture of color solid state image pickup element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5651183A JPS5651183A (en) | 1981-05-08 |
| JPH026273B2 true JPH026273B2 (en) | 1990-02-08 |
Family
ID=14945263
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12684479A Granted JPS5651183A (en) | 1979-08-24 | 1979-10-03 | Color solid image pickup element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5651183A (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59232304A (en) * | 1983-06-15 | 1984-12-27 | Matsushita Electric Ind Co Ltd | Production of color filter |
| JP4556273B2 (en) * | 2000-03-21 | 2010-10-06 | ソニー株式会社 | Solid-state image sensor and camera system using the same |
-
1979
- 1979-10-03 JP JP12684479A patent/JPS5651183A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5651183A (en) | 1981-05-08 |
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