JPS6057711B2 - solid state imaging device - Google Patents
solid state imaging deviceInfo
- Publication number
- JPS6057711B2 JPS6057711B2 JP55097055A JP9705580A JPS6057711B2 JP S6057711 B2 JPS6057711 B2 JP S6057711B2 JP 55097055 A JP55097055 A JP 55097055A JP 9705580 A JP9705580 A JP 9705580A JP S6057711 B2 JPS6057711 B2 JP S6057711B2
- Authority
- JP
- Japan
- Prior art keywords
- filter
- groove
- imaging device
- color
- image sensor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000003384 imaging method Methods 0.000 title claims description 13
- 239000007787 solid Substances 0.000 title 1
- 239000000758 substrate Substances 0.000 claims description 3
- 239000003086 colorant Substances 0.000 claims description 2
- 238000006243 chemical reaction Methods 0.000 claims 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 7
- 238000000926 separation method Methods 0.000 description 7
- 229910052804 chromium Inorganic materials 0.000 description 6
- 239000011651 chromium Substances 0.000 description 6
- 239000011521 glass Substances 0.000 description 5
- 239000012790 adhesive layer Substances 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 230000035945 sensitivity Effects 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000000975 dye Substances 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02162—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors
Description
【発明の詳細な説明】 本発明はカラー撮像が可能な固体撮像装置に関する。[Detailed description of the invention] The present invention relates to a solid-state imaging device capable of capturing color images.
近年、半導体技術、とりわけ集積回路技術の発展に依
り、従来の撮像管にとつて代わる撮像素子の開発が活発
であり、すでに黒白カメラとしては十分実用に供するも
のが市販されている状況にある。同時にこの撮像素子に
緑、青、赤の3色フィルターを備えることによつて単一
撮像素子によるカラーカメラの開発も盛んであるが、解
像度の点、感度の点、色分離の点で今一歩の所である。
この感度、色分離の問題点の原因の1つを第1図を参照
して説明する。従来の3色フィルターを用いたものは、
Aの撮像MOS型、或いはCCD型等の撮像素子板Aと
、色フィルタBと、この両者を接着する接着層Cと、か
ら成つている。 撮像素子板Aの基本構成は、シリコン
基板1と 酸化膜2と透明ゲート電極3、3・・・と、
から成つている。In recent years, with the development of semiconductor technology, especially integrated circuit technology, there has been active development of image pickup devices to replace conventional image pickup tubes, and devices that can be used practically as black and white cameras are already on the market. At the same time, development of color cameras using a single image sensor by equipping this image sensor with three color filters of green, blue, and red is also active, but it is still a step forward in terms of resolution, sensitivity, and color separation. This is the place.
One of the causes of these problems in sensitivity and color separation will be explained with reference to FIG. Those using conventional three-color filters are
It consists of an imaging device plate A of the imaging MOS type or CCD type, etc., a color filter B, and an adhesive layer C that adheres the two. The basic composition of the image sensor plate A is a silicon substrate 1, an oxide film 2, transparent gate electrodes 3, 3...
It consists of
このゲート電極3の巾は約10μ、その間隔は6μ程度
で、このゲート電極3に電圧が印加されると、該ゲート
電極3直下の基板1表面に電荷蓄積可能なポテンシャル
ウェルが形成され、この部分に光が照射される事に依つ
てその光量に応じて生じる光電荷が蓄積され撮像機能が
働く。従つてこのゲート電極3は絵素としての機能を持
つが、夫々隣接する絵素との分離を必要とするので電極
3同志は電気的に絶縁されている。 カラー撮像を可能
にするにはこの各絵素に異つた色の光を同期的に照射さ
せる必要があるので撮像素子板Aに色フィルタBを接着
している。The width of this gate electrode 3 is about 10 μm, and the interval between them is about 6 μm. When a voltage is applied to this gate electrode 3, a potential well capable of accumulating charges is formed on the surface of the substrate 1 directly under the gate electrode 3. When a portion is irradiated with light, photocharges generated in accordance with the amount of light are accumulated and the imaging function is activated. Therefore, this gate electrode 3 has a function as a picture element, but since it is necessary to separate each adjacent picture element, the electrodes 3 are electrically insulated from each other. To enable color imaging, it is necessary to synchronously irradiate each picture element with light of a different color, so a color filter B is bonded to the image sensor plate A.
この色フィルタBは厚さlwn程度の薄い透明ガラス板
5上に撮像素子板Aのゲート電極3、3・・・の間隔に
対応する箇所に光を通さないクロム膜6、6・・・を被
着し、このクロム膜6、6・・・が存在しない透明箇所
に光3原色である緑、青、赤のフィルタ膜7、8、9を
形成する。これ等のフィルタ膜7、”8、9はゼラチン
質の有機レジストに夫々の染料を混入したもので、各フ
ィルタ膜7、8、9の形成時に色干渉を起さないように
透明の中間層10、10が設けられており、赤色フィル
タ膜9表面には同質の表面保護膜11が形成されている
。尚クロム膜6、6・・・を設ける理由は、絵素の存在
しない箇所に到来した光に依つて生じた光電荷が隣接す
る絵素へ確率的に流れ込み、完全な色分離や絵素分離が
出来ない現象を防止する為である。撮像素子板Aと色フ
ィルタBとを接着する接着層Cは薄い方が良いが、実際
には10μ程度の厚みを有している。然し乍らこのクロ
ム膜6,6・・・・・・の存在に依つてこの膜6,6・
・・へ到来した光は撮像動作には全く寄与しない事とな
り、撮像装置としての感度の低下を来していた。This color filter B has chromium films 6, 6, etc., which do not transmit light, on a thin transparent glass plate 5 with a thickness of about lwn, at locations corresponding to the spacing between the gate electrodes 3, 3, etc. of the image sensor plate A. Filter films 7, 8, and 9 of green, blue, and red, which are the three primary colors of light, are formed in transparent areas where the chromium films 6, 6, . . . are not present. These filter films 7, 8, and 9 are made of gelatinous organic resist mixed with respective dyes, and a transparent intermediate layer is added to prevent color interference when forming each filter film 7, 8, and 9. 10, 10 are provided, and a surface protective film 11 of the same quality is formed on the surface of the red filter film 9.The reason for providing the chromium films 6, 6, etc. is that the chromium films 6, 6, etc. This is to prevent a phenomenon in which photocharges generated by the light stochastically flow into adjacent picture elements, making complete color separation or picture element separation impossible.Image sensor plate A and color filter B are bonded together. Although it is better for the adhesive layer C to be thin, it actually has a thickness of about 10μ.However, due to the presence of the chromium films 6, 6...
The light that arrived at ... did not contribute to the imaging operation at all, resulting in a decrease in the sensitivity of the imaging device.
本発明は斯様な問題点を解決するもので、到来照射光を
無駄なく撮像動作に用い、しかも色分離や絵素分離が可
能な撮像装置を提供するものである。The present invention solves such problems and provides an imaging device that uses incoming irradiation light without wasting it for imaging operations and is capable of color separation and pixel separation.
第2図は本発明装置の一実施例の断面図であり、図番は
全て第1図と同じに示されている。FIG. 2 is a cross-sectional view of one embodiment of the device of the present invention, and all figure numbers are the same as in FIG. 1.
第1図と異るところはクロム膜6,6・・・を設ける代
りに透明ガラス板5に撮像素子板Aのゲート電極3,3
・・・の間隔に該当して凹レンズを形成するように差し
渡し約6μの凹溝を形成し、この凹溝のほぼ中央位置ま
で各色のフィルタ膜7,8,9を延在せしめ、特にこの
実施例の場合はこの凹溝内で互に隣接するフィルタ膜7
,8,9を少くとも僅かにオーバーラップさせていると
ころにある。尚、透明ガラス板5に凹レンズ状の凹溝を
形成するには液体蝕刻法を用いる等方性エッチング法に
依つて大略希望する凹レンズが得られる。具体的にはこ
の凹溝の差し渡しの約半分の3μ程度のスリットをガラ
ス板5の耐蝕刻膜に設け、弗酸系の蝕刻液を用いる事に
依つて約6μの深さで、焦点距離が接着層Cの厚さと略
等しい10μ前後の凹溝が得られる。〜斯る構造に依る
と、この凹溝に到来した光は夫々色フィルタ7,8,9
を介して凹レンズ部に達し、そこで矢印で示す如く、夫
々ゲート電極3,3・・・側へ折曲せしめられ、絵素間
隔部に到達する事なく各絵素に対してのみ有効に作用す
る事となる。The difference from FIG. 1 is that instead of providing chromium films 6, 6, etc., the gate electrodes 3, 3 of the image sensor plate A are provided on the transparent glass plate 5.
A concave groove with a width of approximately 6 μm is formed so as to form a concave lens corresponding to the spacing of . In the case of the example, filter membranes 7 adjacent to each other within this groove
, 8, and 9 are at least slightly overlapped. In order to form concave lens-shaped concave grooves on the transparent glass plate 5, approximately the desired concave lens can be obtained by isotropic etching using liquid etching. Specifically, a slit of about 3 μm, which is about half the width of this concave groove, is formed in the etching-resistant film of the glass plate 5, and by using a hydrofluoric acid-based etching solution, a slit with a depth of about 6 μm and a focal length of about 6 μm is formed. A groove with a thickness of approximately 10 μm, which is approximately equal to the thickness of the adhesive layer C, is obtained. ~According to such a structure, the light that reaches this groove is passed through the color filters 7, 8, and 9, respectively.
It reaches the concave lens part through the lens, and there, as shown by the arrow, is bent toward the gate electrodes 3, 3, . It happens.
以上説明した如く、本発明に於いては撮像素子の絵素間
隔に到来した光も全て絵素に導いているので、効率は極
めて高く、また絵素間隔には光照射がないので色分離や
絵素分離が完全に行われ、高解像度か期特出来る。As explained above, in the present invention, all the light that has arrived between the picture elements of the image sensor is guided to the picture elements, so the efficiency is extremely high, and since there is no light irradiation between the picture elements, color separation is possible. Picture elements are completely separated, allowing for high resolution.
第1図は現存する撮像装置の断面図、第2図は本発明装
置の断面図であつて、Aは撮像素子板、Bは色フィルタ
、Cは接着層、5は透明ガラス板、6はクロム膜、7,
8,9はフィルタ膜、を夫々示している。FIG. 1 is a sectional view of an existing imaging device, and FIG. 2 is a sectional view of the device of the present invention, in which A is an image sensor plate, B is a color filter, C is an adhesive layer, 5 is a transparent glass plate, and 6 is a sectional view of an existing imaging device. chrome film, 7,
8 and 9 indicate filter membranes, respectively.
Claims (1)
該素子板に近接して配置された色フィルタと、から成り
、該フィルタは透明基板を有し、該基板には夫々上記撮
像素子板の光電変換部の間隔部に該当する箇所に凹溝が
穿たれて凹レンズ部が設けられており、この各凹溝のほ
ぼ中央の位置から隣接する凹溝のほぼ中央の位置に亘つ
て夫々異なる色のフィルタ膜を設け、この各凹溝位置の
フィルタ膜を透過する光を凹レンズの作用に依つて隣接
光電変換部に導く事を特徴とした固体撮像装置。1. An image sensor plate having photoelectric conversion units at predetermined intervals;
and a color filter disposed close to the element plate, each filter having a transparent substrate, each of which has grooves at locations corresponding to the spacing between the photoelectric conversion sections of the image sensor plate. A concave lens portion is provided in the groove, and filter films of different colors are provided from approximately the center of each groove to approximately the center of the adjacent groove, and the filter film at each groove position is provided with a filter film of a different color. A solid-state imaging device characterized by guiding the light passing through the image to an adjacent photoelectric conversion section by the action of a concave lens.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP55097055A JPS6057711B2 (en) | 1980-07-15 | 1980-07-15 | solid state imaging device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP55097055A JPS6057711B2 (en) | 1980-07-15 | 1980-07-15 | solid state imaging device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5721879A JPS5721879A (en) | 1982-02-04 |
JPS6057711B2 true JPS6057711B2 (en) | 1985-12-16 |
Family
ID=14181967
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP55097055A Expired JPS6057711B2 (en) | 1980-07-15 | 1980-07-15 | solid state imaging device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6057711B2 (en) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5910266A (en) * | 1982-07-09 | 1984-01-19 | Hitachi Ltd | Manufacture of solid-state image pickup element |
JPS5968967A (en) * | 1982-10-13 | 1984-04-19 | Toshiba Corp | Manufacture of solid-state image pick-up device |
JPS6038989A (en) * | 1983-08-12 | 1985-02-28 | Nec Corp | Solid-state image pickup device and its manufacture |
KR20000003501A (en) * | 1998-06-29 | 2000-01-15 | 김영환 | Image sensor having micro concave lens and manufacturing method thereof |
-
1980
- 1980-07-15 JP JP55097055A patent/JPS6057711B2/en not_active Expired
Also Published As
Publication number | Publication date |
---|---|
JPS5721879A (en) | 1982-02-04 |
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