JPS59122193A - Solid-state image pickup device - Google Patents
Solid-state image pickup deviceInfo
- Publication number
- JPS59122193A JPS59122193A JP57229039A JP22903982A JPS59122193A JP S59122193 A JPS59122193 A JP S59122193A JP 57229039 A JP57229039 A JP 57229039A JP 22903982 A JP22903982 A JP 22903982A JP S59122193 A JPS59122193 A JP S59122193A
- Authority
- JP
- Japan
- Prior art keywords
- region
- solid
- light
- resin layer
- photoelectric conversion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000011347 resin Substances 0.000 claims abstract description 17
- 229920005989 resin Polymers 0.000 claims abstract description 17
- 239000004065 semiconductor Substances 0.000 claims abstract description 6
- 239000000758 substrate Substances 0.000 claims abstract description 6
- 238000006243 chemical reaction Methods 0.000 claims description 20
- 238000003384 imaging method Methods 0.000 claims description 17
- 239000000203 mixture Substances 0.000 abstract description 4
- 229920002120 photoresistant polymer Polymers 0.000 abstract description 2
- 230000035945 sensitivity Effects 0.000 abstract description 2
- 238000004040 coloring Methods 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 239000004372 Polyvinyl alcohol Substances 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 239000000975 dye Substances 0.000 description 1
- 238000006552 photochemical reaction Methods 0.000 description 1
- 229920002189 poly(glycerol 1-O-monomethacrylate) polymer Polymers 0.000 description 1
- 229920002451 polyvinyl alcohol Polymers 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02162—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0232—Optical elements or arrangements associated with the device
- H01L31/02327—Optical elements or arrangements associated with the device the optical elements being integrated or being directly associated to the device, e.g. back reflectors
Abstract
Description
【発明の詳細な説明】
本発明は固体撮像装置の感度向上およびカラー撮像装置
の混色防止に関するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to improving the sensitivity of solid-state imaging devices and preventing color mixture in color imaging devices.
一般に固体撮像製置は、半導体基板主面に光電変換部及
び信号読ろ出し部を有するため、有効な光電変換領域と
して１００−使用することはできない◇この欠点を解決
する手段として、光電変換領域と信号読み出し領域を分
離したＣＣＤ（電荷結合素子）フレーム拳トランスファ
一方式、あるいはＣＣＤインターライン転送方式、
ＭＯＳ ｍｔｉ＆像素子上に光導電膜を形成し、光１４
！変換効率を向上させる構成が提案されている。In general, solid-state imaging devices have a photoelectric conversion section and a signal readout section on the main surface of a semiconductor substrate, so they cannot be used as an effective photoelectric conversion area. A CCD (charge-coupled device) frame transfer system with separate signal readout area or CCD interline transfer system,
A photoconductive film is formed on the MOS mti & image element, and the light 14
! Configurations have been proposed to improve conversion efficiency.
しかし、これらの方法はチップサイズの増大、製作の困
＃さ、光電変換以外の特性劣化など問題点も多い＝ｏ８
らに固体撮像装置をカラー撮像装置に応用する場合、光
電変換領域とカラーフィルタアレーとの目金せずによっ
て生じる混色の問題かあった０
本発明は上に述べた欠点をなくシ、高感度で混色のない
固体撮像装置を提供するものである。However, these methods have many problems such as increased chip size, difficulty in manufacturing, and deterioration of characteristics other than photoelectric conversion = o8
Furthermore, when a solid-state imaging device is applied to a color imaging device, there is a problem of color mixing caused by the lack of contact between the photoelectric conversion region and the color filter array. This provides a solid-state imaging device that does not cause color mixture.
本発明によれば同一半導体基板上にモザイク上に形成さ
れた光電変素子群と、光電咄凛子群で形−換さう
れた信号を読み出す手段とかｌなる固体撮像装置におい
て、前記光電変換素子群の各光電変換素子Ｊ。According to the present invention, in a solid-state imaging device comprising a group of photoelectric conversion elements formed in a mosaic manner on the same semiconductor substrate, and a means for reading out a signal transformed by the photoelectric conversion element group, the photoelectric conversion element group Each photoelectric conversion element J.
に対応し、な７２１．且つ、この光電変換素子の主面に
色フイルタアレーが形成されてなり、該色フイルタアレ
ー上に感光性樹脂を用いて前記光電変換素子に入射光を
集光させるだめの集光レンズが形成されていることを特
徴とする固体撮像装置が得られる。Corresponding to 721. Further, a color filter array is formed on the main surface of the photoelectric conversion element, and a condensing lens for condensing incident light onto the photoelectric conversion element is formed using a photosensitive resin on the color filter array. A solid-state imaging device is obtained.
次に図面を用いて、本発明について説明する。Next, the present invention will be explained using the drawings.
第１図〜第４図は本発明の固体撮像装置の一実施例をそ
の製造方法と共に説明するための図で主要工程における
固体撮像装置の断面概念図を示している。1 to 4 are diagrams for explaining an embodiment of the solid-state imaging device of the present invention together with its manufacturing method, and show conceptual cross-sectional views of the solid-state imaging device in main steps.
第１図は通常のＣＯＤインターライン方式方式固装像装
置面を模式的に示したもので半導体基板ｌＯの主面には
例えばフォトダイオードからなる光電変換領域１１が配
置されている。１２は光電変換部ρ
埃１゛ｅ光電変換した信号を読み出すＣＯＤレジスタメ
領域で、第１図には図示してないが光電変換領域１１と
ＣＣＤレジスタ１２の間には信号電荷の転送を制御する
トランスファゲートが配置されている。FIG. 1 schematically shows the surface of a conventional COD interline solid-state image device, in which a photoelectric conversion region 11 made of, for example, a photodiode is arranged on the main surface of a semiconductor substrate IO. Reference numeral 12 denotes a COD register area for reading out the photoelectrically converted signal, which is located between the photoelectric converter area 11 and the CCD register 12 and controls the transfer of signal charges. A transfer gate is placed.
またＣＯＤレジスタおよびトランスファゲート領域は例
えばＡｊのような光を通さない層１３で遮光／されてい
る。ＣＯＤレジスタ詔よびトランスファゲート領域の主
面と遮光層１３間には、絶縁層転送電極が配置されてい
るが本発明の動作と関係がないため図示されていない。Further, the COD register and the transfer gate region are shielded from light by a layer 13 that does not transmit light, such as Aj. An insulating layer transfer electrode is arranged between the main surface of the COD register and transfer gate region and the light shielding layer 13, but it is not shown because it has no relation to the operation of the present invention.
第２図は第１図に示したＣＯＤインターライン転送方式
に色フィルターを形成した場合の一実施例である。１４
は例えばポリビニールアルコール、アクリルなどの可染
性樹脂層で、フォトレジスト技術を用いて、次々に赤１
５、緑１６、背１７の染料を染め分けたものである。第
３図は、素子表面上にモザイク状あるいはストライプ状
に色フィルターを形成した後、例えば１４の可染性樹脂
層あるいはＰ ＧＭＡのような透明で感光性のある樹脂
層１８を形成する。樹脂層１８は、染色層の保睦膜とし
ての役割も行っている。樹脂層１８を被着した後撮像装
置のボンデングパット部上のＰＧＭ人を光化学反応を用
いて除去する。FIG. 2 shows an example in which a color filter is formed in the COD interline transfer method shown in FIG. 14
is a layer of dyeable resin, such as polyvinyl alcohol or acrylic, which is colored red one after another using photoresist technology.
5, green 16, and back 17 dyes. In FIG. 3, after forming color filters in a mosaic or stripe pattern on the surface of the device, for example, 14 dyeable resin layers or a transparent photosensitive resin layer 18 such as PGMA are formed. The resin layer 18 also serves as a protective film for the dyed layer. After depositing the resin layer 18, the PGM layer on the bonding pad portion of the imaging device is removed using a photochemical reaction.
第４図は感光性樹脂層１８の表面に入射した光を感光領
域１１へ有効に集光するよう形成されたレンズアレーで
１９のような凸レンズを形成した一実施例である。FIG. 4 shows an embodiment in which a convex lens 19 is formed in a lens array formed to effectively condense light incident on the surface of the photosensitive resin layer 18 onto the photosensitive area 11.
入射光側はレンズ１９の曲率半径と樹脂層１８の厚さに
より光電変換領域の中に完全に集光することができる０
このように入射光を光電変換部の１点あるいは、小さな
面積上に集光することにより、色フィルタ１５．１６．
１７の目合せがずれても、充分マージンを。The incident light side can be completely focused into the photoelectric conversion region by the radius of curvature of the lens 19 and the thickness of the resin layer 18. In this way, the incident light can be focused on one point or a small area of the photoelectric conversion section. By focusing the light, color filters 15, 16.
Even if the alignment of 17 is off, there is enough margin.
もって混色のない固体撮像装置を得ることができる０
また感光性樹脂層１８上に形成するレンズ１９の形状は
凸レンズに限定することなく、■溝形あるいは台形構造
により入射光を光電変換領域に集光することもできる。As a result, a solid-state imaging device without color mixture can be obtained.0 Furthermore, the shape of the lens 19 formed on the photosensitive resin layer 18 is not limited to a convex lens; It can also be illuminated.
さらに本発明はＣＣＤフレームFurthermore, the present invention provides a CCD frame.
第１−第４図は本発明の固体撮像装置の一実施例をその
製造方法と共に説明するための図で、各主要工程におけ
る固体撮像装置の断面を模式的に示したものである〇
第１図はＣＯＤイン−！−ライン転送方式撮像装置の断
面模式図、第２図は、第１図に示した撮像装置上に色フ
ィルタを形成した断面図、第３図は色フィルター上にさ
らに樹脂層を被着した断面図、第４図樹脂層上に入射光
を集光するレンズを形成した断面図を示す。
ＩＯは基板半導体、ＩＩは光電変換領域、１２は信号読
み出し領域、１３は遮光層、１５，１６．１７は色フィ
ル夛、１８は感光性透明樹脂、１９はレンズを示す。Figures 1 to 4 are diagrams for explaining one embodiment of the solid-state imaging device of the present invention together with its manufacturing method, and schematically show cross-sections of the solid-state imaging device in each main process. The figure is COD in-! - A schematic cross-sectional view of a line transfer type imaging device; FIG. 2 is a cross-sectional view of a color filter formed on the image pickup device shown in FIG. 1; and FIG. 3 is a cross-sectional view of a color filter further coated with a resin layer. FIG. 4 shows a cross-sectional view in which a lens for condensing incident light is formed on the resin layer. IO is a substrate semiconductor, II is a photoelectric conversion region, 12 is a signal readout region, 13 is a light shielding layer, 15, 16, 17 are color filters, 18 is a photosensitive transparent resin, and 19 is a lens.
Claims (1)
子群と、光電変換素子群で光電変換された信号を読ろ出
す手段からなる固体撮像装置において、前記充電変換素
子群の各光電変換素子に対応し、この主面に色フイルタ
−アレーか形成されてなり、該色フイルタ−アレー上に
感光性樹脂を用いて前記光を変換素子に入射光を集光さ
せるための集光レンズが形成きれていることを＊ａとす
る固体撮像装置。In the solid-state imaging device comprising a group of photoelectric conversion elements formed in a mosaic shape on a semiconductor substrate and a means for reading out signals photoelectrically converted by the group of photoelectric conversion elements, each photoelectric conversion element of the group of charging conversion elements Corresponding to this, a color filter array is formed on the main surface, and a condensing lens is formed using a photosensitive resin on the color filter array to condense the incident light onto the light conversion element. A solid-state imaging device that is marked *a if it is sharp.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57229039A JPS59122193A (en) | 1982-12-28 | 1982-12-28 | Solid-state image pickup device |
| US06/564,403 US4667092A (en) | 1982-12-28 | 1983-12-22 | Solid-state image device with resin lens and resin contact layer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57229039A JPS59122193A (en) | 1982-12-28 | 1982-12-28 | Solid-state image pickup device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS59122193A true JPS59122193A (en) | 1984-07-14 |
Family
ID=16885783
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57229039A Pending JPS59122193A (en) | 1982-12-28 | 1982-12-28 | Solid-state image pickup device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59122193A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59148482A (en) * | 1983-02-14 | 1984-08-25 | Hitachi Ltd | Manufacture of solid-state image pickup element |
| JPS61203663A (en) * | 1985-02-13 | 1986-09-09 | Nec Corp | Manufacture of solid-state image pick-up device |
| FR2671198A1 (en) * | 1990-12-31 | 1992-07-03 | Samsung Electronics Co Ltd | COLOR FILTER AND MANUFACTURING METHOD THEREOF. |
| WO2007116887A1 (en) | 2006-04-03 | 2007-10-18 | Toppan Printing Co., Ltd. | Color image sensor and method for fabricating color image sensor |
| US7683302B2 (en) | 2004-10-08 | 2010-03-23 | Panasonic Corporation | Solid-state imaging device having on-chip color filter layers and solid-state imaging device manufacturing method of the solid-state imaging device |
| CN111405256A (en) * | 2018-12-13 | 2020-07-10 | 爱思开海力士有限公司 | Image sensing device having organic pixel array and inorganic pixel array |
-
1982
- 1982-12-28 JP JP57229039A patent/JPS59122193A/en active Pending
Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59148482A (en) * | 1983-02-14 | 1984-08-25 | Hitachi Ltd | Manufacture of solid-state image pickup element |
| JPH0544193B2 (en) * | 1983-02-14 | 1993-07-05 | Hitachi Ltd | |
| JPS61203663A (en) * | 1985-02-13 | 1986-09-09 | Nec Corp | Manufacture of solid-state image pick-up device |
| FR2671198A1 (en) * | 1990-12-31 | 1992-07-03 | Samsung Electronics Co Ltd | COLOR FILTER AND MANUFACTURING METHOD THEREOF. |
| US7989752B2 (en) | 2004-10-08 | 2011-08-02 | Panasonic Corporation | Solid-state imaging device and solid-state imaging device manufacturing method |
| US7683302B2 (en) | 2004-10-08 | 2010-03-23 | Panasonic Corporation | Solid-state imaging device having on-chip color filter layers and solid-state imaging device manufacturing method of the solid-state imaging device |
| US8134110B2 (en) | 2004-10-08 | 2012-03-13 | Panasonic Corporation | Solid-state imaging device and solid-state imaging device manufacturing method |
| WO2007116887A1 (en) | 2006-04-03 | 2007-10-18 | Toppan Printing Co., Ltd. | Color image sensor and method for fabricating color image sensor |
| US8049805B2 (en) | 2006-04-03 | 2011-11-01 | Toppan Printing Co., Ltd. | Color imaging device and color imaging device manufacturing method |
| EP2482316A1 (en) | 2006-04-03 | 2012-08-01 | Toppan Printing Co., Ltd. | Color imaging device and color imaging device manufacturing method |
| CN111405256A (en) * | 2018-12-13 | 2020-07-10 | 爱思开海力士有限公司 | Image sensing device having organic pixel array and inorganic pixel array |
| US11244975B2 (en) | 2018-12-13 | 2022-02-08 | SK Hynix Inc. | Image sensing device having organic pixel array and inorganic pixel array |
| CN111405256B (en) * | 2018-12-13 | 2022-03-08 | 爱思开海力士有限公司 | Image sensing device having organic pixel array and inorganic pixel array |
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