JPS5964594A - Crucible for molecular beam epitaxy (mbe) - Google Patents
Crucible for molecular beam epitaxy (mbe)Info
- Publication number
- JPS5964594A JPS5964594A JP16951682A JP16951682A JPS5964594A JP S5964594 A JPS5964594 A JP S5964594A JP 16951682 A JP16951682 A JP 16951682A JP 16951682 A JP16951682 A JP 16951682A JP S5964594 A JPS5964594 A JP S5964594A
- Authority
- JP
- Japan
- Prior art keywords
- crucible
- opening
- source
- molecular beam
- cover
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
- C30B23/02—Epitaxial-layer growth
- C30B23/06—Heating of the deposition chamber, the substrate or the materials to be evaporated
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Abstract
Description
【発明の詳細な説明】
(1)発明の技術分野
本発明は分子線成長の際に用いる分子線源を収納する坩
堝の構造に関するものであシ、特に結晶成長の際ジ羽堝
の分子線放出用開口先端付近の温度降下に起因する被処
理基板上に形成されるオーバルディフェクトを低減せし
める分子線成長用坩堝に関するものでちる。Detailed Description of the Invention (1) Technical Field of the Invention The present invention relates to the structure of a crucible that houses a molecular beam source used in molecular beam growth, and particularly relates to the structure of a crucible that houses a molecular beam source used in molecular beam growth. This invention relates to a crucible for molecular beam growth that reduces oval defects formed on a substrate to be processed due to a temperature drop near the tip of a discharge opening.
(2)従来技術と問題点
従来、分子線結晶成長(以下MBEと称する)に用いる
、例えばガリウム(Ga )ソース用の坩堝(クルージ
プル)としては円筒形又は円錐形の絹堝が一般的である
。(2) Prior art and problems Conventionally, a cylindrical or conical crucible has been commonly used as a crucible for a gallium (Ga) source used in molecular beam crystal growth (hereinafter referred to as MBE). .
第1図はMBEを実施する際に用いる従来の円筒形坩堝
の碩略断面図である。FIG. 1 is a schematic cross-sectional view of a conventional cylindrical crucible used when performing MBE.
第1図に示すようにGaソース3が収容されている円筒
形坩堝1はその外周に配設されたコイルヒーター2で加
熱されるが、用堝1の分子線放出用開口先端付近では、
内部に比べて外部への熱放射が大きいために、坩堝内部
より低温化する。通常、坩堝1内部で気化したGa分子
は、As分子とによってG a A s基板上にGaA
s単結晶として成長せしめられる。しかしながら、前述
した坩堝1の開口先端付近の低温化のために、坩堝1内
部で気化したGa分子カ団1堝1の開口先端付近KGa
液滴6として≧1.4結する。しばしばこれらの液滴即
ち露結体6は分子結晶成長中に坩堝1内部のGaソース
及びQaAs膜14に落下し、液面を乱す。そ“のため
Gaソース3から、分子に比べて比較的巨大な分子の塊
(クラスター)が放出され一部が被処理基板5の成長エ
ピタキシャル1■に利殖しその結果成長面にオーバルデ
ィフェクト(oval defect)を形成するとい
う問題がある。尚、坩堝1内のGaAs膜4は、基板上
にQaAs結晶を成長する際、AsがGaソース用坩堝
l内に入り込み形成されるものである。As shown in FIG. 1, a cylindrical crucible 1 containing a Ga source 3 is heated by a coil heater 2 disposed around its outer periphery.
Since heat radiation to the outside is greater than that to the inside, the temperature becomes lower than that inside the crucible. Usually, the Ga molecules vaporized inside the crucible 1 form GaA on the GaAs substrate with As molecules.
s is grown as a single crystal. However, due to the lower temperature near the open end of the crucible 1 mentioned above, the Ga molecular groups vaporized inside the crucible 1 KGa near the open end of the crucible 1
≧1.4 concretions as droplet 6. These droplets or dew condensates 6 often fall onto the Ga source and QaAs film 14 inside the crucible 1 during molecular crystal growth and disturb the liquid level. Therefore, from the Ga source 3, clusters of molecules that are relatively large compared to the molecules are released, and some of them propagate onto the grown epitaxial layer 1 of the substrate 5 to be processed, resulting in oval defects on the growth surface. The GaAs film 4 in the crucible 1 is formed by As entering the Ga source crucible 1 when growing a QaAs crystal on a substrate.
(3)発明の目的
以上の欠点を鑑み、本発明の目的は分子純成長装置用坩
堝に起因するオーバルディフェクトを減少せしめる改良
された坩堝の構造′f:堤供させることである。(3) Purpose of the Invention In view of the above disadvantages, the purpose of the present invention is to provide an improved crucible structure 'f' that reduces oval defects caused by crucibles for molecular pure growth devices.
(4)発明の構成
本発明の目的は分子線結晶用坩堝の分子線放出用開口部
に、該開口の一部を罹って露結体がソース面上へ滴下す
るのを阻止する部材を配設することによυ達成される。(4) Structure of the Invention The object of the present invention is to provide a molecular beam emitting opening of a crucible for molecular beam crystallization with a member that covers a part of the opening and prevents dew condensation from dropping onto the source surface. υ is achieved by establishing
(5)発明の実施例 以下本発明を実施例に基づいて詳細に説明する。(5) Examples of the invention The present invention will be described in detail below based on examples.
第2図は本発明に係るMBE用坩堝の一つの実施例を示
す概略断面図である。FIG. 2 is a schematic sectional view showing one embodiment of the MBE crucible according to the present invention.
第2図によれば、GILソース13が収納された通常の
MBEソース用坩堝11がその外周を従来構造のコイル
ヒーター12によって取り囲まれている。According to FIG. 2, an ordinary MBE source crucible 11 containing a GIL source 13 is surrounded by a coil heater 12 having a conventional structure.
本実施例の坩堝は長さSが約6〔ctIT〕、分子線放
出用開口部先端での径が3〔m〕、直胴部での径が2〜
2.5[CJ++]である。そして坩堝11の壁面には
開口部先端から深さSa(=3.5〔c1n〕)のとこ
ろに3〜5〔闘〕径の開口を有する内蓋部材17aが配
設され、更に、開口部先端から深さ5b(=2.5〔c
111〕)のところに3〜5〔咽〕径の開口を有する外
蓋部材17bが配設されている。2つの開口のそれぞれ
の中心は同心軸上にあシ、蓋部材17a及び17bはキ
ャップの形で坩堝11に装着されている。このような蓋
部材を設けた坩堝11を用いればヒーター12によって
900〜1100[℃]の温度に加熱されたGaソース
13から発生するGa分子13′は蓋部材に設けられた
開口を通り基板15の表面に成長せしめられる。この時
、低温側の外M部4d’ 17 bの裏面に、GaO液
滴16が露結する可能性がある。しかしながら、本発明
では外蓋部材17bに鎮結したGa譚結体16は、たと
え落下しても次の内蓋部材17&によってGaソース1
3への落下が阻止される。従ってGaソース13及びG
aAs膜14の表面を乱すことがない。そのため巨大な
分子の塊(クラスター)も放出されず、基板15表面に
オーバーディフェクトが発生するのを防止することが出
来る。尚、外蓋部材17a付近での湿度は内蓋部材17
bに比べて高温である為、外蓋部材17alC(”1着
したG’a液滴は露結することはない。また坩堝11の
分子線放出用開口部は蓋部材17a、17bによって1
部カックーされて、いる為坩堝内部の温度の均一化が向
上する。The crucible of this example has a length S of about 6 [ctIT], a diameter at the tip of the opening for molecular beam emission of 3 [m], and a diameter at the straight body part of 2 to 2 m.
It is 2.5 [CJ++]. An inner lid member 17a having an opening of 3 to 5 diameters is disposed on the wall of the crucible 11 at a depth Sa (=3.5 [c1n]) from the tip of the opening. Depth 5b (=2.5[c] from the tip
111]), an outer lid member 17b having an opening of 3 to 5 diameters is disposed. The centers of the two openings are arranged on concentric axes, and the lid members 17a and 17b are attached to the crucible 11 in the form of caps. If the crucible 11 provided with such a lid member is used, Ga molecules 13' generated from the Ga source 13 heated to a temperature of 900 to 1100 [°C] by the heater 12 will pass through the opening provided in the lid member and reach the substrate 15. grown on the surface of At this time, there is a possibility that the GaO droplets 16 may form dew condensation on the back surface of the outer M portion 4d' 17b on the low temperature side. However, in the present invention, even if the Ga tan aggregates 16 settled on the outer cover member 17b fall, the Ga source 1 is removed by the next inner cover member 17&.
3 is prevented from falling. Therefore, Ga source 13 and G
The surface of the aAs film 14 is not disturbed. Therefore, no giant molecular clusters are released, and it is possible to prevent over-defects from occurring on the surface of the substrate 15. Note that the humidity near the outer lid member 17a is lower than that of the inner lid member 17.
Since the temperature is higher than that of the outer lid member 17alC ("the first G'a droplet does not form dew condensation, the molecular beam emission opening of the crucible 11 is
The temperature inside the crucible improves uniformity because the parts are cuckooed.
本発明に係る蓋部材の材質は坩堝の材質同様円3N(/
fイロリティック y)pロン ナイトライド)が好ま
しい。更に、本実施例では蓋部材17a。The material of the lid member according to the present invention is the same as the material of the crucible.
f ylolytic y) pron nitride) is preferred. Furthermore, in this embodiment, a lid member 17a.
17bが着脱可能である為、坩堝11の洗浄が容易に行
なえる。尚、本実施例では蓋部材17’a。Since 17b is removable, the crucible 11 can be easily cleaned. In this embodiment, the lid member 17'a.
17bを着脱可能にする為に坩堝と別個に形成したが、
坩堝に一体化して形成してもよい。In order to make 17b removable, it was formed separately from the crucible, but
It may be formed integrally with the crucible.
第3図及び第4図は本発明に係る他の実施例を示す概略
断面図である。3 and 4 are schematic sectional views showing other embodiments of the present invention.
第3図は第2図と同様に坩堝の分子線放出用開口部に配
設された蓋部材は2重構造となっているが、本実施例の
特徴は、内蓋部材17a′と外蓋部月17b′に設けら
れた穴の位置が同心1リロからずれていることにあり、
Gaソース13から坩堝11の外部を望めなりC:q造
としているため保温効率が第2図(の場合より高い。第
4図は蓋部材が3重構造、すなわち内蓋部側17a“、
中蓋部材17b”、外蓋部材17c”の型式を有する構
造となっているので保温が不淀全な場合は有効である。In FIG. 3, as in FIG. 2, the lid member disposed at the molecular beam emitting opening of the crucible has a double structure, but the feature of this embodiment is that the inner lid member 17a' and the outer lid This is because the position of the hole provided in part 17b' is shifted from the concentric 1 lilo.
The outside of the crucible 11 can be seen from the Ga source 13, and the heat retention efficiency is higher than in the case shown in FIG.
Since the structure has an inner lid member 17b'' and an outer lid member 17c'', it is effective when heat retention is insufficient.
尚第3図、第4図中の他の参照符号は前回と同一のもの
である。It should be noted that other reference numerals in FIGS. 3 and 4 are the same as in the previous example.
尚本実施例では蓋部材を2重、3重に設けているが、保
湿が完全である場合は1つの蓋部材だけ取りイ」けても
効果があることは容易に理解されよう。In this embodiment, the lid members are provided in double or triple layers, but it is easily understood that if the moisture retention is complete, it is effective even if only one lid member is removed.
(6)発明の効果
以上の説明から本発明に係る分子線結晶成長であり且つ
坩堝内の温度の均一化、又は保温効率を向上さぜること
か出来る。(6) Effects of the Invention From the above explanation, the molecular beam crystal growth according to the present invention can make the temperature in the crucible uniform or improve the heat retention efficiency.
第1図は従来技術を説明するだめの概略断面図であり、
第2図、第3図、第4図は本発明の実施例を示す概略断
面図である。
1.11・・・坩堝、2,12・・・ヒーター、3゜1
3−Gaソース、3’ 、 13’−Ga分子、14
・・・GaAs B’A、5.15・・・Ga基板、6
、 l 6・=Ga液滴、17a 、17b 、17
a’、17b’、17a’。
17b#+17c’−蓋部材
11♀許出願人
富士通株式会社
特許出願代理人
弁理士 青 木 朗
弁理士西舘和之
弁理士内田幸男
弁理士 山 口 昭 之FIG. 1 is a schematic sectional view for explaining the prior art.
2, 3, and 4 are schematic sectional views showing embodiments of the present invention. 1.11... Crucible, 2,12... Heater, 3゜1
3-Ga source, 3', 13'-Ga molecule, 14
...GaAs B'A, 5.15...Ga substrate, 6
, l 6·=Ga droplet, 17a , 17b , 17
a', 17b', 17a'. 17b#+17c'-Lid member 11♀Applicant Fujitsu Limited Patent agent Akira Aoki Patent attorney Kazuyuki Nishidate Patent attorney Yukio Uchida Patent attorney Akira Yamaguchi
Claims (1)
がソース面上へ滴下するのを阻止する部材を配設してな
ることを特徴とする分子結晶成長中。During molecular crystal growth, the molecular beam emitting opening is provided with a member that prevents dew condensation from dropping onto the source surface by blocking a part of the opening.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16951682A JPS5964594A (en) | 1982-09-30 | 1982-09-30 | Crucible for molecular beam epitaxy (mbe) |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16951682A JPS5964594A (en) | 1982-09-30 | 1982-09-30 | Crucible for molecular beam epitaxy (mbe) |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5964594A true JPS5964594A (en) | 1984-04-12 |
Family
ID=15887952
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP16951682A Pending JPS5964594A (en) | 1982-09-30 | 1982-09-30 | Crucible for molecular beam epitaxy (mbe) |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5964594A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61132589A (en) * | 1984-11-30 | 1986-06-20 | Agency Of Ind Science & Technol | Crucible for vapor deposition |
-
1982
- 1982-09-30 JP JP16951682A patent/JPS5964594A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61132589A (en) * | 1984-11-30 | 1986-06-20 | Agency Of Ind Science & Technol | Crucible for vapor deposition |
JPH0214318B2 (en) * | 1984-11-30 | 1990-04-06 | Kogyo Gijutsuin |
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