JPS5961952A - Parts for semiconductor - Google Patents
Parts for semiconductorInfo
- Publication number
- JPS5961952A JPS5961952A JP17266082A JP17266082A JPS5961952A JP S5961952 A JPS5961952 A JP S5961952A JP 17266082 A JP17266082 A JP 17266082A JP 17266082 A JP17266082 A JP 17266082A JP S5961952 A JPS5961952 A JP S5961952A
- Authority
- JP
- Japan
- Prior art keywords
- chip
- recession
- nickel
- lead rod
- lead bar
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01029—Copper [Cu]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01042—Molybdenum [Mo]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01074—Tungsten [W]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01082—Lead [Pb]
Abstract
Description
【発明の詳細な説明】
この発明け、半導体素子の構成部品に関￥るものである
。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to components of semiconductor devices.
タングステン、モリブデン等の高融点金属でつくらｎた
１対のチップ（スラグ）の間ＶＣ／ｌ）コンウニハケ介
装し、上記チップの外側端ＨＩ５にはそれぞれ金属リー
ド棒を接合したダイオードが知ら一１ｔている。上記チ
ップとリード棒とを接合してなる２１′導体用；ｓｌｊ
品の製造に際して従来採用されてきた接合方法１４、チ
ップの端面にリード棒を突き合わせてスポット溶接する
方法であったので、両者の接合強度が低く、使用中にリ
ード棒が脱落しやすいという大きな欠点があった。A diode (VC/l) is interposed between a pair of chips (slugs) made of high melting point metals such as tungsten and molybdenum, and a metal lead rod is connected to each of the outer ends HI5 of the chips. ing. For 21' conductor made by joining the above chip and lead rod; slj
The conventional joining method 14 used for manufacturing products was spot welding by butting a lead rod against the end face of the chip, which had a major drawback in that the joint strength between the two was low and the lead rod easily fell off during use. was there.
この発明に上記事情に鑑みてなさノ１．たもので、チッ
プとり一ド棒とが強固に接合さ才″Ｌだ半導体用部品を
提供するものであり、こフ１．について以Ｔ’［説明す
る。This invention was made in view of the above circumstances.1. This is to provide a semiconductor component in which a chip and a rod are firmly joined together.
不発明にかかる半導体用部品に、芯部に凹部を形成した
高融点金属チップに、表面にニッケル層をそなえた金属
リード棒を嵌合し２．加熱処理を施してリード棒の表面
層のニッケルをチップの凹部内面に拡散させ、リード棒
とチップと全一体化したことを特徴としている０以下、
図面にあられさｆｌ、た実施例について説明する。2. In the semiconductor component according to the invention, a metal lead rod having a nickel layer on the surface is fitted to a high melting point metal chip having a recessed portion in the core. 0 or less, which is characterized by applying heat treatment to diffuse the nickel on the surface layer of the lead rod into the inner surface of the concave part of the chip, so that the lead rod and the chip are completely integrated.
The embodiment shown in the drawings will be described.
この半導体用部品１は、タングステン、モリブデン等の
高融点金属材料でつくられたチップ２と、金属製のり一
ド棒３を接合一体化してなる。チップ２に、第１図に示
す如く、芯部（で軸方向の四部４をそなえた円柱体とし
て形成さ１．でいる。このようなチップ２は、例えば原
オ・１であるモリブデンＡ、（Ｈの金属粉末を自ｎＵｒ
プレス機等で加圧成形し、遠足雰囲気中またはｒ＋、空
中で焼結する方法等で製造することができる。このよう
に粉末成形時に金型て凹ＴｒｌｌＳ４を成形する場合は
、該凹部に金型抜取り用の抜きテーバがつき、開［］側
が孔底側よりもわずかに径が大きくなるのが酋通である
。なお、凹部４は焼結後に穿設してもよく、チップ２自
体を塑性加工により成形してもよい。図示例では、凹？
”？１５４がめくら穴として形成さ几ているが、これを
貫通孔として形成してもよい。This semiconductor component 1 is made by integrally bonding a chip 2 made of a high melting point metal material such as tungsten or molybdenum, and a metal glue rod 3. As shown in FIG. 1, the chip 2 is formed as a cylindrical body having a core part (4) and four axial parts 4.Such a chip 2 is made of, for example, molybdenum A, which is raw material O. (The metal powder of H is
It can be manufactured by pressure forming using a press or the like and sintering in an excursion atmosphere, r+, or air. In this way, when molding the concave TrllS4 with a mold during powder molding, the concave part has a punching bar for extracting the mold, and the diameter of the opening [ ] side is slightly larger than the hole bottom side. be. Note that the recess 4 may be formed after sintering, or the chip 2 itself may be formed by plastic working. In the illustrated example, is it concave?
154 is formed as a blind hole, but it may also be formed as a through hole.
リード棒３は、銅、銅合金（例えば、銅−ジルコン、銅
−クロム）その他の金属桐刺てつくら几た棒体３ａの表
面にニッケル層３ｂを形成してなる。このようなニッケ
ル層３１〕ｉｄ、例えば公知のニッケルメッキ法によっ
て容易に形成することができる。ニッケル層３ ｌ）の
厚みに、５ミクロン（１１？＋＋、 ）以−ヒとするの
が好捷しく、１５〜２０ミクロンとするのが史に好捷し
い。なお、リード棒３としてニッケル棒を使用する場合
は、上記ニッケルメッキは不要である。The lead rod 3 is formed by forming a nickel layer 3b on the surface of a rod body 3a made of copper, copper alloy (for example, copper-zircon, copper-chromium) or other metal paulownia. Such a nickel layer 31]id can be easily formed by, for example, a known nickel plating method. The thickness of the nickel layer 3l) is preferably 5 microns (11?++, ) or more, and 15 to 20 microns is historically preferable. Note that when a nickel rod is used as the lead rod 3, the above-mentioned nickel plating is not necessary.
上記リ−トイ木３の先端部をチップ２の凹部４に挿入し
、加熱処理を施す。チップ２の四部４とリード棒３との
ハメアイは、リード棒３の外周部が凹部内面に密着する
ようなものとする必要があり、リード杯３不−上記凹部
４に圧入才るのが好捷し因。The tip of the Leetoi wood 3 is inserted into the recess 4 of the chip 2 and heat treated. The fit between the four parts 4 of the chip 2 and the lead rod 3 must be such that the outer circumference of the lead rod 3 is in close contact with the inner surface of the recess, and it is preferable that the lead cup 3 is press-fitted into the recess 4. The cause of the change.
第３図は、リード棒３の径よりも大径の凹部４を形成し
、その開口縁部に内側に突出−「るバリ状の突出部５を
形成して、リード棒３の先端ｏ１ｓ ｆ凹部４内に据え
込んだ例をあられす。このような突出ｉηＩｓ ５ ｆ
ｌ、例えばチップ２をバレル研磨（ともずり）すること
によって形成￥ることかできる。このように、リード棒
３をチップの四部４内に据え込むこととｆｆ′Ｌは、チ
ップ２とリード棒３の接合強度はきわめて強固なものと
なる。In FIG. 3, a recess 4 having a diameter larger than the diameter of the lead rod 3 is formed, and a burr-shaped projection 5 is formed at the opening edge of the recess 4, and the tip of the lead rod 3 is o1s f. Here is an example in which the projection is placed in the recess 4. Such a protrusion iηIs 5 f
For example, the tip 2 can be formed by barrel polishing. In this way, by upsetting the lead rod 3 into the four parts 4 of the chip and ff'L, the bonding strength between the chip 2 and the lead rod 3 becomes extremely strong.
つき゛に、リード棒３を挿入したチップに加熱処理を施
す。この加熱処理に、リード棒表面層のニッケルをチッ
プ２の凹部４内υ１て部すこ拡散させるためのものであ
り、力［１熱温度は７００〜１０００℃、より好寸しく
に７５０〜８００℃とするのがよい。At the same time, the chip into which the lead rod 3 is inserted is subjected to heat treatment. During this heat treatment, the nickel on the surface layer of the lead rod is diffused into the concave portion 4 of the chip 2, and the heat temperature is 700 to 1000°C, more preferably 750 to 800°C. It is better to
また、チップ２の酸化を防止するため、この加熱を水素
ガス、不活性ガス等の雰囲気中、丑たは真空中で行なう
必要がある。加熱時間は３０分以上とするのが望せしい
。Further, in order to prevent the chip 2 from oxidizing, it is necessary to perform this heating in an atmosphere of hydrogen gas, inert gas, etc., in a vacuum, or in a vacuum. It is desirable that the heating time be 30 minutes or more.
上配加熱処岬によって、第２図に示すような半導体用部
品１が得られる。得ら′ｉ１．た半導体用部品１ば、チ
ップ２の凹部４内にリード棒３の先端部がきつく嵌合し
、しかもリード棒３から拡散したツブ２との接合強度が
きわめて高いものとなっている。By the upper heat treatment cape, a semiconductor component 1 as shown in FIG. 2 is obtained. Obtain'i1. In the semiconductor component 1, the tip of the lead rod 3 is tightly fitted into the recess 4 of the chip 2, and the bonding strength with the protrusion 2 diffused from the lead rod 3 is extremely high.
このようにして製造した１対の半導体用部品１．１を第
４図に示すようにシリコンウニ”６ｆｆｉ挾んで互いに
突き合わせ、そのまわりにガラスモールド７を設けるこ
とにより、半導体であるガラスモールドダイオード９が
得ら几るのである。As shown in FIG. 4, a pair of semiconductor components 1.1 manufactured in this manner are butted against each other by sandwiching silicone urchins 6ffi, and a glass mold 7 is provided around them to form a glass mold diode 9, which is a semiconductor. It will be reduced if it is obtained.
平均粒度３．０ミクロンのモ味ブデン粉末を用いて公知
の粉末ヤ金法によ！ｌｌ第１図に示すような有孔円柱状
のチップ２を製造した０図図において、Ｄ ＝ １．
５ ｍｍ、 ｌ＝ ２． ０ ｍｍ、ｄｏ＝ ０．
８ ７ ｍｍ 、 （＋、 ＝０、７６ ｍｍ 、
ｔ ＝ １．０ ｍｍであった。これにバレル研磨を
施して凹部４の開口縁部に片側の突出量が０、０５ ｍ
ｍの突出部５を形成した。このため、開口縁部の内径ｄ
１は０．７５ ｍｍとなった。Using the well-known powder metal method using mojibuden powder with an average particle size of 3.0 microns! In Figure 0, a cylindrical chip 2 with holes as shown in Figure 1 was manufactured, where D = 1.
5 mm, l=2. 0 mm, do=0.
8 7 mm, (+, =0, 76 mm,
t = 1.0 mm. Barrel polishing is applied to this so that the opening edge of the recess 4 has a protrusion of 0.05 m on one side.
A protrusion 5 of m was formed. Therefore, the inner diameter d of the opening edge
1 was 0.75 mm.
このチップ２に外径ｄｇ−０７５ｍｍ ％長さＬ−３０
咽のり一ド棒（銅棒に厚さ１５ミクロンのニッケルメッ
キを施したもの）３を据え込み、第３図のような状態と
したのち、加熱処理（７５０℃ｘ３０分、 Ｉｌ、中）
を施して、チップとり一ド棒とが接合された半導体用部
品？得た。This tip 2 has an outer diameter dg-075mm and a % length L-30.
After upsetting the glue rod (copper rod with nickel plating of 15 microns thick) 3 into the state shown in Figure 3, heat treatment (750°C x 30 minutes, medium)
Semiconductor parts in which the chip and the rod are joined together by applying Obtained.
得られた半導体用部品の接合強度′ｆｃ調べるため引張
り試験を行なった結果は、リード棒を凹部に据え込んだ
だけのものが５〜６にりで接合部が破断（リード棒が抜
き取られた）したのに対し、加熱処理を施してニッケル
を拡散させたものは、８〜１１Ｋｇで破断した。なお、
チップに凹部を設けず、単にリード棒を端面に突き合わ
せて接合しただけの従来製品の接合強度ｎ ２ Ｋｑ以
下であっｔＯ寸だ、従来品に曲げ方向の力や衝撃力に対
して弱かったが、不発明品ケり一ド棒が凹部内に挿入さ
れているため、曲げ方向の力や衝′撃力ＶＣ７ｊシてす
ぐれた抵抗力を示した。A tensile test was conducted to check the bonding strength 'fc of the obtained semiconductor parts, and the results showed that when the lead rod was simply seated in the recess, the joint broke after 5 to 6 strands (the lead rod was pulled out). ), whereas those subjected to heat treatment to diffuse nickel broke at 8 to 11 kg. In addition,
The bonding strength of the conventional product, which does not have a recess in the chip and is simply joined by butting the lead rod against the end face, is less than n 2 Kq, which is less than tO, whereas the conventional product was weak against bending force and impact force. Since the uninvented single-rod rod was inserted into the recess, it exhibited excellent resistance to bending force and impact force VC7j.
以トに説明したように、不発明にかっ・ろ半導体用部品
は、リード棒とチップの接合強度がきわめて高いすぐｆ
′したものである。As explained above, the non-inventive semiconductor components have extremely high bonding strength between the lead rod and the chip.
'
第１図はチップとリード棒の一部断面側面図、第２図に
：半導体用部品の一部断面図、第３図は据え込み状態を
あられｆ説明図、第４図は半導体の側面図である。図は
いずれも実施例をあられす。
■・・半導体用π１ｓ品、２・・・チップ、３・・リー
ド棒、４・・・凹！’？＋５．５・・・突出刃ＳＯ特許
出願人 東邦金属味式会社
代 理 人 弁理士菅原弘志
第１図Figure 1 is a partial cross-sectional side view of the chip and lead rod, Figure 2 is a partial cross-sectional view of semiconductor components, Figure 3 is an explanatory diagram of the upsetting state, and Figure 4 is a side view of the semiconductor. It is. All figures show examples. ■...Pi1s product for semiconductor, 2...chip, 3...lead rod, 4...concave! '? +5.5... Protruding blade SO patent applicant Toho Metal Aji Co., Ltd. Attorney Hiroshi Sugawara, patent attorney Figure 1
Claims (1)
金属チップに、表面にニッケル層をそなえた金属リード
棒全嵌合し、加熱処Ｊ′！Ｔ！ｉ施してリード棒の表面
層のニッケルをチップの凹部内面に拡散さぜ、リード棒
とチップとを一体化したことを特徴とする半導体用部品
。(]) r'c1. Snow ηli[A metal lead rod with a nickel layer on the surface is fully fitted into the recessed high-melting point metal chip, and heated J'! T! A semiconductor component characterized in that the lead rod and the chip are integrated by applying nickel on the surface layer of the lead rod to the inner surface of the recess of the chip.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17266082A JPS5961952A (en) | 1982-09-30 | 1982-09-30 | Parts for semiconductor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17266082A JPS5961952A (en) | 1982-09-30 | 1982-09-30 | Parts for semiconductor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5961952A true JPS5961952A (en) | 1984-04-09 |
| JPS637027B2 JPS637027B2 (en) | 1988-02-15 |
Family
ID=15946010
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP17266082A Granted JPS5961952A (en) | 1982-09-30 | 1982-09-30 | Parts for semiconductor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5961952A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0792463A4 (en) * | 1994-11-15 | 1998-06-24 | Formfactor Inc | Mounting spring elements on semiconductor devices, and wafer-level testing methodology |
| EP0859686A4 (en) * | 1995-05-26 | 1998-11-11 | Formfactor Inc | Fabricating interconnects and tips using sacrificial substrates |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5420666U (en) * | 1977-07-14 | 1979-02-09 | ||
| JPS5550647A (en) * | 1978-10-03 | 1980-04-12 | Aaru Jii Toomasu Corp | Semiconductor member and method of assembling same |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5420666B2 (en) * | 1973-12-28 | 1979-07-24 |
-
1982
- 1982-09-30 JP JP17266082A patent/JPS5961952A/en active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5420666U (en) * | 1977-07-14 | 1979-02-09 | ||
| JPS5550647A (en) * | 1978-10-03 | 1980-04-12 | Aaru Jii Toomasu Corp | Semiconductor member and method of assembling same |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0792463A4 (en) * | 1994-11-15 | 1998-06-24 | Formfactor Inc | Mounting spring elements on semiconductor devices, and wafer-level testing methodology |
| EP0859686A4 (en) * | 1995-05-26 | 1998-11-11 | Formfactor Inc | Fabricating interconnects and tips using sacrificial substrates |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS637027B2 (en) | 1988-02-15 |
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